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    • 5. 发明授权
    • Object recognition system, and obstacle recognition system and method for vehicle
    • 对象识别系统,车辆障碍物识别系统及方法
    • US08848055B2
    • 2014-09-30
    • US13031935
    • 2011-02-22
    • Hong Seok Lee
    • Hong Seok Lee
    • H04N7/18G06K9/32G06K9/00G06K9/46
    • G06K9/00805G06K9/3233G06K9/4642H04N7/18
    • Provided is an object recognition system. The object recognition system recognizes an object in an ROI of a source image. The object recognition system includes an image change unit and an ROI detection unit. The image change unit receives the source image, and changes the object into an edge image which is represented as an edge line. The ROI detection unit divides the edge image into a plurality of regions, compares a total sum of edge component values of an edge line included in each of the regions and a predetermined threshold value by regions, and detects a region, in which the total sum of edge component values is greater than the threshold value, as the ROI from among the plurality of regions.
    • 提供了一种对象识别系统。 物体识别系统识别源图像的ROI中的对象。 物体识别系统包括图像改变单元和ROI检测单元。 图像改变单元接收源图像,并将对象改变为表示为边缘线的边缘图像。 ROI检测单元将边缘图像分割成多个区域,将每个区域中包括的边缘线的边缘分量值的总和与区域进行比较,并且检测区域,其中总和 边缘分量值大于阈值,作为多个区域中的ROI。
    • 7. 发明授权
    • Method for fabricating quantum dot and semiconductor structure containing quantum dot
    • 制造量子点和含有量子点的半导体结构的方法
    • US08679879B2
    • 2014-03-25
    • US13325528
    • 2011-12-14
    • Hong Seok Lee
    • Hong Seok Lee
    • H01L21/336
    • H01L29/127B82Y10/00B82Y30/00B82Y40/00
    • Disclosed are a method for fabricating a quantum dot. The method includes the steps of (a) preparing a compound semiconductor layer including a quantum well structure formed by sequentially stacking a first barrier layer, a well layer and a second barrier layer; (b) forming a dielectric thin film pattern including a first dielectric thin film having a thermal expansion coefficient higher than a thermal expansion coefficient of the second barrier layer and a second dielectric thin film having a thermal expansion coefficient lower than the thermal expansion coefficient of the second barrier layer on the second barrier layer; and (c) heat-treating the compound semiconductor layer formed thereon with the dielectric thin film pattern to cause an intermixing between elements of the well layer and elements of the barrier layers at a region of the compound semiconductor layer under the second dielectric thin film.
    • 公开了一种制造量子点的方法。 该方法包括以下步骤:(a)制备包括通过依次层叠第一阻挡层,阱层和第二阻挡层而形成的量子阱结构的化合物半导体层; (b)形成电介质薄膜图案,该电介质薄膜图案包括热膨胀系数高于第二阻挡层的热膨胀系数的第一电介质薄膜和热膨胀系数低于热膨胀系数的第二电介质薄膜 第二阻挡层; 和(c)利用电介质薄膜图案对其上形成的化合物半导体层进行热处理,以在第二介电薄膜下方的化合物半导体层的区域处引起阱层的元件与势垒层的元件之间的混合。