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1. 发明申请

US20120119243A1 HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：高效发光二极管及其制造方法
公开(公告)号：US20120119243A1
公开(公告)日：2012-05-17
申请号：US13109669
申请日：2011-05-17
申请人： Chang Yeon KIM , Da Hye KIM , Hong Chul LIM , Joon Hee LEE , Jong Kyun YOU
发明人： Chang Yeon KIM , Da Hye KIM , Hong Chul LIM , Joon Hee LEE , Jong Kyun YOU
IPC分类号： H01L33/22
CPC分类号： H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/46 , H01L2224/48463 , H01L2224/73265
摘要： Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.
摘要翻译：本发明的示例性实施例涉及一种高效率发光二极管（LED）。根据示例性实施例的LED包括衬底，布置在衬底上的半导体堆叠，其中半导体堆叠具有p型半导体层，有源层和n型半导体层，插入在衬底之间的第一金属层半导体堆叠，与半导体堆叠欧姆接触的第一金属层，布置在半导体堆叠上的第一电极焊盘，从第一电极焊盘延伸的电极延伸部，其中电极延伸部具有接触n型半导体层，插入在所述基板和所述半导体堆叠之间的第一绝缘层，其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域，以及插入在所述第一绝缘层之间的第二绝缘层电极焊盘和半导体堆叠。

2. 发明授权

US09029888B2 High efficiency light emitting diode and method of fabricating the same 有权
标题翻译：高效率发光二极管及其制造方法
公开(公告)号：US09029888B2
公开(公告)日：2015-05-12
申请号：US13109669
申请日：2011-05-17
申请人： Chang Yeon Kim , Da Hye Kim , Hong Chul Lim , Joon Hee Lee , Jong Kyun You
发明人： Chang Yeon Kim , Da Hye Kim , Hong Chul Lim , Joon Hee Lee , Jong Kyun You
IPC分类号： H01L33/00 , H01L33/38 , H01L33/46 , H01L33/22
CPC分类号： H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/46 , H01L2224/48463 , H01L2224/73265
摘要： Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.
摘要翻译：本发明的示例性实施例涉及一种高效率发光二极管（LED）。根据示例性实施例的LED包括衬底，布置在衬底上的半导体堆叠，其中半导体堆叠具有p型半导体层，有源层和n型半导体层，插入在衬底之间的第一金属层半导体堆叠，与半导体堆叠欧姆接触的第一金属层，布置在半导体堆叠上的第一电极焊盘，从第一电极焊盘延伸的电极延伸部，其中电极延伸部具有接触n型半导体层，插入在所述基板和所述半导体堆叠之间的第一绝缘层，其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域，以及插入在所述第一绝缘层之间的第二绝缘层电极焊盘和半导体堆叠。

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