专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100219359A1 SIGNAL WAVEFORM MEASURING APPARATUS AND MEASURING METHOD 有权
标题翻译：信号波形测量装置和测量方法
公开(公告)号：US20100219359A1
公开(公告)日：2010-09-02
申请号：US12550895
申请日：2009-08-31
申请人： Hiroyasu FUJIWARA , Tadashi Kawazoe , Motoichi Ohtsu
发明人： Hiroyasu FUJIWARA , Tadashi Kawazoe , Motoichi Ohtsu
IPC分类号： H01J40/14
CPC分类号： G01J11/00
摘要： A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1. A signal waveform measuring apparatus and a measuring method that enable a time waveform of signal light to be measured with good precision by a simple configuration are thereby realized.
摘要翻译：信号波形测量装置1A由信号光学系统11，参考光学系统16，设置信号光L1和参考光L2之间的时间差的时差设定单元12构成，波长转换元件20包括并且以与入射到晶体聚集体上的入射光波长转换为更短波长的转换光L5的强度成比例的第r次幂（r> 1）入射光，检测在元件20处以与信号光L1的强度相关的强度，参考光L2的强度和两者之间的时间差产生的转换光L5的光电检测器30，以及信号波形分析器40，对转换光L5的检测结果进行分析，从而获取信号光L1的时间波形。从而实现了通过简单的结构实现以高精度测量信号光的时间波形的信号波形测量装置和测量方法。

2. 发明授权

US08482197B2 Photocathode, electron tube, field assist type photocathode, field assist type photocathode array, and field assist type electron tube 有权
标题翻译：光电阴极，电子管，场辅助型光电阴极，场辅助型光电阴极阵列和场辅助型电子管
公开(公告)号：US08482197B2
公开(公告)日：2013-07-09
申请号：US11819599
申请日：2007-06-28
申请人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
发明人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
IPC分类号： H01J40/06
CPC分类号： H01J40/06 , H01J31/48
摘要： When light is incident to an antenna layer AA6 of a photocathode AA1, light of a specific wavelength included in the incident light couples with surface plasmons in the antenna layer AA6 whereupon near-field light is outputted from a through hole AA14. The intensity of the output near-field light is proportional to and greater than the intensity of the light of the specific wavelength. The output near-field light has a wavelength that can be absorbed in a photoelectric conversion layer AA4. The photoelectric conversion layer AA4 receives the near-field light outputted from the through hole AA14. A region of the photoelectric conversion layer AA4 around the through hole AA14 absorbs the near-field light and generates photoelectrons (e−) in an amount according to the intensity of the near-field light. The photoelectrons (e−) generated in the photoelectric conversion layer AA4 are outputted to the outside.
摘要翻译：当光入射到光电阴极AA1的天线层AA6时，包括在入射光中的特定波长的光与天线层AA6中的表面等离子体激元耦合，从而从通孔AA14输出近场光。输出近场光的强度与特定波长的光的强度成比例并且大于特定波长的光的强度。输出的近场光具有可以在光电转换层AA4中吸收的波长。光电转换层AA4接收从通孔AA14输出的近场光。通孔AA14周围的光电转换层AA4的区域吸收近场光，并以与近场光强度相对应的量产生光电子（e-）。在光电转换层AA4中产生的光电子（e-）被输出到外部。

3. 发明授权

US08446094B2 Photocathode, electron tube, field assist type photocathode, field assist type photocathode array, and field assist type electron tube 有权
公开(公告)号：US08446094B2
公开(公告)日：2013-05-21
申请号：US12712546
申请日：2010-02-25
申请人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
发明人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
IPC分类号： H01J40/06
CPC分类号： H01J40/06 , H01J31/48
摘要： When light is incident to an antenna layer AA6 of a photocathode AA1, light of a specific wavelength included in the incident light couples with surface plasmons in the antenna layer AA6 whereupon near-field light is outputted from a through hole AA14. The intensity of the output near-field light is proportional to and greater than the intensity of the light of the specific wavelength. The output near-field light has a wavelength that can be absorbed in a photoelectric conversion layer AA4. The photoelectric conversion layer AA4 receives the near-field light outputted from the through hole AA14. A region of the photoelectric conversion layer AA4 around the through hole AA14 absorbs the near-field light and generates photoelectrons (e−) in an amount according to the intensity of the near-field light. The photoelectrons (e−) generated in the photoelectric conversion layer AA4 are outputted to the outside.

4. 发明申请

US20100148667A1 PHOTOCATHODE, ELECTRON TUBE, FIELD ASSIST TYPE PHOTOCATHODE, FIELD ASSIST TYPE PHOTOCATHODE ARRAY, AND FIELD ASSIST TYPE ELECTRON TUBE 有权
标题翻译：光电池，电子管，现场辅助类型光电池，现场辅助型光电子阵列和现场辅助型电子管
公开(公告)号：US20100148667A1
公开(公告)日：2010-06-17
申请号：US12712546
申请日：2010-02-25
申请人： Minoru NIIGAKI , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
发明人： Minoru NIIGAKI , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
IPC分类号： H01J40/16 , H01J40/06
CPC分类号： H01J40/06 , H01J31/48
摘要： When light is incident to an antenna layer AA6 of a photocathode AA1, light of a specific wavelength included in the incident light couples with surface plasmons in the antenna layer AA6 whereupon near-field light is outputted from a through hole AA14. The intensity of the output near-field light is proportional to and greater than the intensity of the light of the specific wavelength. The output near-field light has a wavelength that can be absorbed in a photoelectric conversion layer AA4. The photoelectric conversion layer AA4 receives the near-field light outputted from the through hole AA14. A region of the photoelectric conversion layer AA4 around the through hole AA14 absorbs the near-field light and generates photoelectrons (e−) in an amount according to the intensity of the near-field light. The photoelectrons (e−) generated in the photoelectric conversion layer AA4 are outputted to the outside.
摘要翻译：当光入射到光电阴极AA1的天线层AA6时，包括在入射光中的特定波长的光与天线层AA6中的表面等离子体激元耦合，从而从通孔AA14输出近场光。输出近场光的强度与特定波长的光的强度成比例并且大于特定波长的光的强度。输出的近场光具有可以在光电转换层AA4中吸收的波长。光电转换层AA4接收从通孔AA14输出的近场光。通孔AA14周围的光电转换层AA4的区域吸收近场光，并以与近场光强度相对应的量产生光电子（e-）。在光电转换层AA4中产生的光电子（e-）被输出到外部。

5. 发明申请

US20080013878A1 Waveguide structure and optical device 有权
标题翻译：波导结构和光学器件
公开(公告)号：US20080013878A1
公开(公告)日：2008-01-17
申请号：US11822542
申请日：2007-07-06
申请人： Hiroyasu Fujiwara , Masamichi Yamanishi , Akira Higuchi , Kazutoshi Nakajima
发明人： Hiroyasu Fujiwara , Masamichi Yamanishi , Akira Higuchi , Kazutoshi Nakajima
IPC分类号： G02B6/10
CPC分类号： G02B6/1226 , B82Y20/00
摘要： There is disclosed a waveguide structure that propagates surface plasmon waves, comprising: a quantum well structure, disposed on a semiconductor substrate; wherein the quantum well structure has a quantum well layer, in turn having an intersecting region that intersects a hypothetical plane substantially orthogonal to an alignment direction of the quantum well structure with respect to the semiconductor substrate, and a real part of a dielectric constant of the quantum well structure is negative for THz waves of a predetermined wavelength.
摘要翻译：公开了传播表面等离子体波的波导结构，包括：量子阱结构，设置在半导体衬底上; 其中所述量子阱结构具有量子阱层，其又具有与基本上正交于所述量子阱结构相对于所述半导体衬底的取向方向的假想平面相交的交叉区域，以及所述量子阱结构的介电常数的实部量子阱结构对于预定波长的THz波是负的。

6. 发明申请

US20050139148A1 Silicon purifying method, slag for purifying silicon and purified silicon 审中-公开
标题翻译：硅精制方法，用于纯化硅和纯化硅的炉渣
公开(公告)号：US20050139148A1
公开(公告)日：2005-06-30
申请号：US10503304
申请日：2003-02-03
申请人： Hiroyasu Fujiwara , Ryotatsu Otsuka , Kenji Wada , Toshiaki Fukuyama
发明人： Hiroyasu Fujiwara , Ryotatsu Otsuka , Kenji Wada , Toshiaki Fukuyama
IPC分类号： C01B33/037 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C01B33/037
摘要： Method capable of preparing silicon having purity of about 6N applied to a solar cell efficiently at a low cost. Raw silicon containing boron and a slag are melted and a shaft is rotated by a rotating/driving mechanism for stirring the molten silicon. The molten slag is dispersed in the molten silicon, thereby accelerating the boron removal reaction. It is further effective to use a slag containing at least 45 percent by mass of silicon oxide or to blow gas mixed with water vapor into the molten silicon for refining reaction.
摘要翻译：能够以低成本高效率地制造纯度约为6N的硅的方法。含有硼和渣的原料硅熔化，并通过用于搅拌熔融硅的旋转/驱动机构旋转轴。熔融渣分散在熔融硅中，从而加速脱硼反应。使用含有至少45质量％的氧化硅的炉渣或者将与水蒸气混合的气体吹入熔融硅中以进行精制反应是进一步有效的。

7. 发明授权

US08183514B2 Signal waveform measuring apparatus and method comprising a wavelength conversion element 有权
标题翻译：包括波长转换元件的信号波形测量装置和方法
公开(公告)号：US08183514B2
公开(公告)日：2012-05-22
申请号：US12550895
申请日：2009-08-31
申请人： Hiroyasu Fujiwara , Tadashi Kawazoe , Motoichi Ohtsu
发明人： Hiroyasu Fujiwara , Tadashi Kawazoe , Motoichi Ohtsu
IPC分类号： H03F3/08 , G02F1/35
CPC分类号： G01J11/00
摘要： A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1. A signal waveform measuring apparatus and a measuring method that enable a time waveform of signal light to be measured with good precision by a simple configuration are thereby realized.
摘要翻译：信号波形测量装置1A由信号光学系统11，参考光学系统16，设置信号光L1和参考光L2之间的时间差的时差设定单元12构成，波长转换元件20包括并且以与入射到晶体聚集体上的入射光波长转换为更短波长的转换光L5的强度成比例的第r次幂（r> 1）入射光，检测在元件20处以与信号光L1的强度相关的强度，参考光L2的强度和两者之间的时间差产生的转换光L5的光电检测器30，以及信号波形分析器40，对转换光L5的检测结果进行分析，从而获取信号光L1的时间波形。从而实现了通过简单的结构实现以高精度测量信号光的时间波形的信号波形测量装置和测量方法。

8. 发明授权

US07557336B2 Photodetector having first and second antenna areas with patterns having different cycle intervals 有权
标题翻译：光检测器具有第一和第二天线区域，其图案具有不同的周期间隔
公开(公告)号：US07557336B2
公开(公告)日：2009-07-07
申请号：US11798040
申请日：2007-05-09
申请人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
发明人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
IPC分类号： H01L31/00
CPC分类号： H01L31/02162
摘要： When light is made incident into antenna layers 11a, 11b, and 11c of a photodetector 1, specific wavelength components of light contained in the incident light combine with surface plasmons of the antenna layers 11a, 11b, and 11c, and surface plasmon resonance occurs. Thereby, near-field lights are outputted from through-holes 13 of the antenna layers 11a, 11b, and 11c. The near-field light outputted from each through-hole 13 reaches a light absorbing layer 4 via light receiving surfaces 4a, 4b, and 4c. The light absorbing layer 4 generates a charge of an amount according to the amount of received light. Since cycle intervals Λa, Λb, and Λc of convex portions 12 in the antenna layers 11a, 11b, and 11c are different from each other, the wavelength component of light that combines with a surface plasmon differs in each of the antenna layers 11a, 11b, and 11c. Consequently, a plurality of wavelength components of light can be detected.
摘要翻译：当光入射到光电检测器1的天线层11a，11b和11c中时，入射光中包含的光的特定波长分量与天线层11a，11b和11c的表面等离子体相结合，并发生表面等离子体共振。由此，从天线层11a，11b，11c的通孔13输出近场光。从每个通孔13输出的近场光通过光接收表面4a，4b和4c到达光吸收层4。光吸收层4产生与接收光量相关的量的电荷。由于天线层11a，11b和11c中的凸部12的周期间隔Lambda，Lambdab和Lambdac彼此不同，所以在每个天线层11a，11b中与表面等离子体的组合的光的波长成分不同，和11c。因此，可以检测多个波长分量的光。

9. 发明申请

US20070262239A1 Photodetector 有权
标题翻译：光电检测器
公开(公告)号：US20070262239A1
公开(公告)日：2007-11-15
申请号：US11798040
申请日：2007-05-09
申请人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
发明人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
IPC分类号： H01L27/00
CPC分类号： H01L31/02162
摘要： When light is made incident into antenna layers 11a, 11b, and 11c of a photodetector 1, specific wavelength components of light contained in the incident light combine with surface plasmons of the antenna layers 11a, 11b, and 11c, and surface plasmon resonance occurs. Thereby, near-field lights are outputted from through-holes 13 of the antenna layers 11a, 11b, and 11c. The near-field light outputted from each through-hole 13 reaches a light absorbing layer 4 via light receiving surfaces 4a, 4b, and 4c. The light absorbing layer 4 generates a charge of an amount according to the amount of received light. Since cycle intervals Λa, Λb, and Λc of convex portions 12 in the antenna layers 11a, 11b, and 11c are different from each other, the wavelength component of light that combines with a surface plasmon differs in each of the antenna layers 11a, 11b, and 11c. Consequently, a plurality of wavelength components of light can be detected.
摘要翻译：当光入射到光电检测器1的天线层11a，11b和11c中时，入射光中包含的光的特定波长成分与天线层11a，11b和11c的表面等离子体相结合，并发生表面等离子体共振。从而，从天线层11a，11b和11c的通孔13输出近场光。从每个通孔13输出的近场光通过光接收表面4a，4b和4c到达光吸收层4。光吸收层4产生与接收光量相关的量的电荷。由于天线层11a，11b和11c中的凸部12的周期间隔Lambda，Lambdab和Lambdac彼此不同，所以与各表面等离子体的组合的光的波长分量在每个天线层中不同 11 a，11 b，11 c。因此，可以检测多个波长分量的光。

10. 发明申请

US20080042563A1 Photocathode, electron tube, field assist type photocathode, field asist type photocathode array, and field asist type electron tube 有权
标题翻译：光电阴极，电子管，场辅助型光电阴极，场一类光电阴极阵列，以及场asist型电子管
公开(公告)号：US20080042563A1
公开(公告)日：2008-02-21
申请号：US11819599
申请日：2007-06-28
申请人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
发明人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
IPC分类号： H01J40/06
CPC分类号： H01J40/06 , H01J31/48
摘要： When light is incident to an antenna layer AA6 of a photocathode AA1, light of a specific wavelength included in the incident light couples with surface plasmons in the antenna layer AA6 whereupon near-field light is outputted from a through hole AA14. The intensity of the output near-field light is proportional to and greater than the intensity of the light of the specific wavelength. The output near-field light has a wavelength that can be absorbed in a photoelectric conversion layer AA4. The photoelectric conversion layer AA4 receives the near-field light outputted from the through hole AA14. A region of the photoelectric conversion layer AA4 around the through hole AA14 absorbs the near-field light and generates photoelectrons (e−) in an amount according to the intensity of the near-field light. The photoelectrons (e−) generated in the photoelectric conversion layer AA4 are outputted to the outside.
摘要翻译：当光入射到光电阴极AA 1的天线层AA 6时，包括在入射光中的特定波长的光与天线层AA 6中的表面等离子体激元耦合，从而从通孔AA 14输出近场光。输出近场光的强度与特定波长的光的强度成比例并且大于特定波长的光的强度。输出的近场光具有可以在光电转换层AA 4中吸收的波长。光电转换层AA4接收从通孔AA14输出的近场光。通孔AA14周围的光电转换层AA4的区域吸收近场光，并以与近场光强度相对应的量生成光电子（e ^{）。在光电转换层AA4中产生的光电子（e - SUP）被输出到外部。}

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式