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1. 发明申请

US20110061418A1 HEAT PUMP TYPE HOT-WATER HEATER 审中-公开
标题翻译：热泵型热水器
公开(公告)号：US20110061418A1
公开(公告)日：2011-03-17
申请号：US12704934
申请日：2010-02-12
申请人： Hiroshi Ishihara , Toshihiro Horiuchi , Toshikatsu Fukunaga , Yoshitaka Suita
发明人： Hiroshi Ishihara , Toshihiro Horiuchi , Toshikatsu Fukunaga , Yoshitaka Suita
IPC分类号： F25B13/00 , F24D17/02 , G05D23/00
CPC分类号： F24H4/04 , F24D2220/042 , F24D2240/26 , F24H9/2021
摘要： A heat pump type hot-water heater includes a hot-water tank, a heat pump cycle for heating hot water, a partition plate which divides an interior of the hot-water tank into an upper space and a lower space, a hot-water supply heat exchanger which exchanges heat of water with heat of hot water in the hot-water tank to produce high temperature hot water, a hot water supply pump which sends hot water in the hot-water tank to the hot-water supply heat exchanger, a heating terminal which heats a room, and a heating pump which sends hot water in the hot-water tank to the heating terminal.
摘要翻译：热泵式热水器包括热水箱，用于加热热水的热泵循环，将热水箱内部分成上部空间和下部空间的隔板，热水供水热交换器，其与热水箱内的热水热交换产生高温热水，将热水箱内的热水送入热水供热热交换器的热水供给泵，加热室的加热端子和将热水箱内的热水送到加热端子的加热泵。

2. 发明授权

US07895748B2 Method of molding a resin coated bearing, method of manufacturing a resin coated bearing, and a resin coated bearing molded by the molding method 有权
标题翻译：树脂涂布轴承的成型方法，树脂涂布轴承的制造方法以及通过成型方法成型的树脂涂布轴承
公开(公告)号：US07895748B2
公开(公告)日：2011-03-01
申请号：US11580008
申请日：2006-10-13
申请人： Takumi Nomura , Hiroshi Naito , Yoshichika Ito , Hiroshi Ishihara , Shuichi Matsumoto , Terumitsu Tanio
发明人： Takumi Nomura , Hiroshi Naito , Yoshichika Ito , Hiroshi Ishihara , Shuichi Matsumoto , Terumitsu Tanio
IPC分类号： B21D53/10
CPC分类号： B29C45/1459 , B29C33/0077 , B29C2045/2714 , F16C13/006 , F16C19/06 , F16C29/045 , F16C33/586 , Y10T29/49384 , Y10T29/49636 , Y10T29/49661 , Y10T29/4967 , Y10T29/4998 , Y10T29/49988 , Y10T29/49989 , Y10T29/49993
摘要： Disclosed is a method of molding a resin coated bearing. When a molten resin is injected toward a substantially central portion of a disk space of forming dies from a sprue formed on an upper die, the molten resin is filled into a cavity through a film gate after the molten resin is led to the disk space from a pin gate, so that any weld is absent on a resin member, which covers an outer race, thus enabling uniformizing a coating member in resin strength and suppressing generation of crack on the coating member even at the time of high loading. Also, since the film gate formed on a whole peripheral edge of the disk space is formed from a lower die and an upper die, there is an advantage that after working suffices to take out a resin coated bearing from the both dies and to cut a runner in the disk space.
摘要翻译：公开了一种模制树脂涂覆轴承的方法。当熔融树脂从形成在上模上的浇口形成模具的盘片空间的大致中央部分注入时，熔融树脂在将熔融树脂引导到盘片空间之后通过膜浇口填充到空腔中销门，使得覆盖外圈的树脂构件上不存在任何焊缝，从而即使在高负载时也能使树脂强度均匀化并且抑制涂层构件的裂纹产生。此外，由于形成在盘片空间的整个周缘上的膜栅由下模和上模形成，所以具有如下优点：在从两个模具中取出树脂涂覆的轴承后，切割一个赛跑者在磁盘空间。

3. 发明授权

US07790887B2 Macrolide compound in solid form, process for preparation thereof, and pharmaceutical composition containing the same 失效
标题翻译：固体形式的大环内酯类化合物，其制备方法和含有该化合物的药物组合物
公开(公告)号：US07790887B2
公开(公告)日：2010-09-07
申请号：US12021184
申请日：2008-01-28
申请人： Hiroshi Ishihara , Manabu Sasho , Keizo Sato , Takashi Kamahara , Masashi Yoshida
发明人： Hiroshi Ishihara , Manabu Sasho , Keizo Sato , Takashi Kamahara , Masashi Yoshida
IPC分类号： C07D411/14
CPC分类号： C07D407/06
摘要： The present invention provides the compound of formula (I) in a solid form which, as a bulk medicament for pharmaceutical manufacture, is uniform, has a high purity, and is easy to work with. The invention further provides a process for preparing this compound, and pharmaceutical compositions containing the same. A solid form of (8E,12E,14E)-7-{(4-cycloheptylpiperazin-1-yl)carbonyl}oxy-3,6,16,21-tetrahydroxy-6,10,12,16,20-pentamethyl-18,19-epoxytricosa-8,12,14-trien-11-olide which has uniform specifications and is easy to work with was developed.
摘要翻译：本发明提供了固体形式的式（I）化合物，其作为药物制造的大量药物是均匀的，具有高纯度，并且易于加工。本发明还提供了制备该化合物的方法和含有该化合物的药物组合物。（8E，12E，14E）-7 - {（4-环庚基哌嗪-1-基）羰基}氧-3,6,16,21-四羟基-6,10,12,16,20-五甲基 - 开发了具有统一规格并且易于使用的18,19-环氧树脂-8,12,14-三烯-11-硼化物。

4. 发明申请

US20100179321A1 SALT OF 5-[2-AMINO-4-(2-FURYL)PYRIMIDIN-5-YL]-1-METHYLPYRIDIN-2(1H)-ONE AND CRYSTAL THEREOF 审中-公开
标题翻译： 5- [2-氨基-4-（2-呋喃基）嘧啶-5-基] -1-甲基吡啶-2（1H） - 酮及其结晶的盐
公开(公告)号：US20100179321A1
公开(公告)日：2010-07-15
申请号：US12440407
申请日：2007-09-06
申请人： Hiroshi Ishihara , Yoshiaki Sato
发明人： Hiroshi Ishihara , Yoshiaki Sato
IPC分类号： C07D405/14
CPC分类号： C07D405/14
摘要： The present invention provides a salt of 5-[2-amino-4-(2-furyl)pyrimidin-5-yl]-1-methylpyridin-2(1H)-one and a crystal thereof.
摘要翻译：本发明提供5- [2-氨基-4-（2-呋喃基）嘧啶-5-基] -1-甲基吡啶-2（1H） - 酮及其晶体的盐。

5. 发明申请

US20090111986A1 NOVEL CRYSTALS OF PYRIMIDINE COMPOUND AND PROCESS FOR PRODUCING THE SAME 失效
标题翻译：吡啶化合物的新型结晶及其制造方法
公开(公告)号：US20090111986A1
公开(公告)日：2009-04-30
申请号：US12346544
申请日：2008-12-30
申请人： Hitoshi HARADA , Hiroshi Ishihara , Yoshiaki Sato , Hiroyuki Chiba , Yuki Komatsu , Susumu Inoue , Naoki Ozeki
发明人： Hitoshi HARADA , Hiroshi Ishihara , Yoshiaki Sato , Hiroyuki Chiba , Yuki Komatsu , Susumu Inoue , Naoki Ozeki
IPC分类号： C07D405/14 , C07D405/02
CPC分类号： C07D405/14 , C07D405/06
摘要： Crystals of 5-[2-amino-4-(2-furyl)pyrimidin-5-yl]-1-methylpyridin-2(1H)-one having a diffraction peak at a diffraction angle (2θ±0.2°) of 9.7° and/or 21.9° in a powder X-ray diffraction are suitable for an active ingredient of a preventing and therapeutic agent for diseases such as constipation. Crystals of 5-[2-amino-4-(2-furyl)pyrimidin-5-yl]-1-methylpyridin-2(1H)-one hydrate and amorphous 5-[2-amino-4-(2-furyl)pyrimidin-5-yl]-1-methylpyridin-2(1H)-one hydrate are also suitable for an active ingredient of a preventing and therapeutic agent for diseases such as constipation.
摘要翻译：在衍射角（2θ±0.2°）为9.7°的衍射峰的5- [2-氨基-4-（2-呋喃基）嘧啶-5-基] -1-甲基吡啶-2（1H） - 酮的晶体和/或21.9°在粉末X射线衍射中适用于诸如便秘的疾病的预防和治疗剂的活性成分。 5- [2-氨基-4-（2-呋喃基）嘧啶-5-基] -1-甲基吡啶-2（1H） - 酮水合物和无定形的5- [2-氨基-4-（2-呋喃基）嘧啶-5-基] -1-甲基吡啶-2（1H） - 酮水合物也适用于诸如便秘等疾病的预防和治疗剂的活性成分。

6. 发明授权

US07465980B2 Ferroelectric memory, multivalent data recording method and multivalent data reading method 有权
标题翻译：铁电存储器，多值数据记录方法和多值数据读取方法
公开(公告)号：US07465980B2
公开(公告)日：2008-12-16
申请号：US11220902
申请日：2005-09-08
申请人： Yoshihiro Arimoto , Hiroshi Ishihara , Tetsuro Tamura , Hiromasa Hoko , Koji Aizawa , Yoshiaki Tabuchi , Masaomi Yamaguchi , Yasuo Nara , Kazuhiro Takahashi , Satoshi Hasegawa
发明人： Yoshihiro Arimoto , Hiroshi Ishihara , Tetsuro Tamura , Hiromasa Hoko , Koji Aizawa , Yoshiaki Tabuchi , Masaomi Yamaguchi , Yasuo Nara , Kazuhiro Takahashi , Satoshi Hasegawa
IPC分类号： H01L29/76
CPC分类号： G11C11/22 , G11C11/5657 , H01L21/28291 , H01L29/6684 , H01L29/78391
摘要： A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.
摘要翻译：铁电存储器件包括通过铁电体膜形成在半导体本体上的栅电极，第一和第二扩散区域形成在沟道区域的各个侧面的半导体本体中，其中铁电体膜包括位于第一区域附近的第一区域所述第一扩散区域，位于所述第二扩散区域附近的第二区域和位于所述第一和第二区域之间的第三区域，其中所述第一区域，第二区域和第三区域携带各自相互独立的极化。

7. 发明授权

US07341291B2 Door handle device for vehicle 有权
标题翻译：车辆门把手装置
公开(公告)号：US07341291B2
公开(公告)日：2008-03-11
申请号：US11080512
申请日：2005-03-16
申请人： Kouji Ooe , Hiroshi Ishihara , Yoshikatsu Furuya , Takayuki Miyahara
发明人： Kouji Ooe , Hiroshi Ishihara , Yoshikatsu Furuya , Takayuki Miyahara
IPC分类号： E05B3/00
CPC分类号： E05B77/06 , E05B85/18 , Y10S292/22 , Y10T292/57
摘要： A door handle device for vehicle rotatably supported by a vehicle door includes a handle portion extended in a first radial direction relative to a rotational axis and positioned outside the vehicle door, a lever portion extended in a second radial direction relative to the rotational axis and positioned in the vehicle door, the lever portion being connected to a connection member for transmitting operational force of door lock release to a door lock mechanism, and a counterweight provided at the handle portion.
摘要翻译：由车门可旋转地支撑的车辆用门把手装置包括：相对于旋转轴线在第一径向上延伸并位于车门外部的手柄部分，相对于旋转轴线沿第二径向方向延伸的杆部分，在车门中，杠杆部分连接到用于将门锁释放的操作力传递到门锁机构的连接构件和设置在手柄部分处的配重。

8. 发明授权

US07330196B2 Apparatus and method for image processing capable of accelerating image overlay process 有权
标题翻译：用于加速图像叠加过程的图像处理装置和方法
公开(公告)号：US07330196B2
公开(公告)日：2008-02-12
申请号：US10625111
申请日：2003-07-22
申请人： Hiroshi Ishihara
发明人： Hiroshi Ishihara
IPC分类号： G09G5/00
CPC分类号： G06T15/005
摘要： An image processing apparatus includes an overlay detector and a memory. The image processing apparatus and method sequentially process graphic rendering instructions for image data. The graphic rendering instructions include first and second graphic rendering instructions. The first graphic rendering instruction is input immediately preceding said second graphic rendering instruction. The first graphic rendering instruction contains first rendering data representing a first original image to render a first output image. The second graphic rendering instruction contains second rendering data representing a second original image to render a second output image. The first original image is overlaid by the second original image.
摘要翻译：图像处理装置包括覆盖检测器和存储器。图像处理装置和方法顺序处理图像数据的图形绘制指令。图形渲染指令包括第一和第二图形渲染指令。在第二图形呈现指令之前输入第一图形呈现指令。第一图形渲染指令包含表示第一原始图像以呈现第一输出图像的第一渲染数据。第二图形呈现指令包含表示第二原始图像以呈现第二输出图像的第二渲染数据。第一个原始图像被第二个原始图像所覆盖。

9. 发明授权

US07033958B2 Semiconductor device and process for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07033958B2
公开(公告)日：2006-04-25
申请号：US10649613
申请日：2003-08-28
申请人： Yoshihisa Fujisaki , Hiroshi Ishihara
发明人： Yoshihisa Fujisaki , Hiroshi Ishihara
IPC分类号： H01L21/31
CPC分类号： H01L21/28185 , H01L21/28202 , H01L29/513 , H01L29/518
摘要： A semiconductor apparatus is provided that is thermally stable in a post process and is suitable for fabricating a gate insulator having a laminated structure with various high permittivity oxides, and a process is provided for producing the same. In order to achieve a high function formation of a gate insulator, a silicon nitride film having a specific inductive capacity approximately twice as much as that of silicon oxide, and which is thermally stable, is not provided with a Si—H bond and is used as at least a portion of the gate insulator. Further, an effective thickness of a gate insulator forming a multilayered structure insulator laminated with a metal oxide having a high dielectric constant, in conversion to silicon oxide, can be thinned to less than 3 nm while restraining leakage current.
摘要翻译：提供了一种在后工序中热稳定的半导体装置，并且适用于制造具有各种高介电常数氧化物的层叠结构的栅极绝缘体，并且提供了制造其的工艺。为了实现栅极绝缘体的高功能性形成，具有比氧化硅大约是电化学氧化硅的比电感容量大约是其热稳定性的两倍的氮化硅膜不具有Si-H键并且被使用作为栅极绝缘体的至少一部分。此外，形成层叠有具有高介电常数的金属氧化物的多层结构绝缘体的栅极绝缘体的有效厚度可以在抑制漏电流的同时变薄到小于3nm。

10. 发明申请

US20060081901A1 Ferroelectric memory, multivalent data recording method and multivalent data reading method 有权
标题翻译：铁电存储器，多值数据记录方法和多值数据读取方法
公开(公告)号：US20060081901A1
公开(公告)日：2006-04-20
申请号：US11220902
申请日：2005-09-08
申请人： Yoshihiro Arimoto , Hiroshi Ishihara , Tetsuro Tamura , Hiromasa Hoko , Koji Aizawa , Yoshiaki Tabuchi , Masaomi Yamaguchi , Yasuo Nara , Kazuhiro Takahashi , Satoshi Hasegawa
发明人： Yoshihiro Arimoto , Hiroshi Ishihara , Tetsuro Tamura , Hiromasa Hoko , Koji Aizawa , Yoshiaki Tabuchi , Masaomi Yamaguchi , Yasuo Nara , Kazuhiro Takahashi , Satoshi Hasegawa
IPC分类号： H01L29/94
CPC分类号： G11C11/22 , G11C11/5657 , H01L21/28291 , H01L29/6684 , H01L29/78391
摘要： A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.
摘要翻译：铁电存储器件包括通过铁电体膜形成在半导体本体上的栅电极，第一和第二扩散区域形成在沟道区域的各个侧面的半导体本体中，其中铁电体膜包括位于第一区域附近的第一区域所述第一扩散区域，位于所述第二扩散区域附近的第二区域和位于所述第一和第二区域之间的第三区域，其中所述第一区域，第二区域和第三区域携带各自相互独立的极化。

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