专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140036598A1 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF 审中-公开
标题翻译：半导体存储器件及其工作方法
公开(公告)号：US20140036598A1
公开(公告)日：2014-02-06
申请号：US13602107
申请日：2012-09-01
申请人： Hea Jong YANG
发明人： Hea Jong YANG
IPC分类号： G11C16/06
CPC分类号： G11C16/3445 , G11C7/02 , G11C11/5635 , G11C16/0483 , G11C2211/5621
摘要： A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a select transistor, memory cells connected in serial and dummy memory cells disposed between the select transistor and the memory cells. A higher voltage is applied to a corresponding dummy memory cell as space between the corresponding dummy memory cell and the select to transistor is reduced in an erase operation.
摘要翻译：公开了一种半导体存储器件及其操作方法。半导体存储器件包括选择晶体管，串联连接的存储单元和设置在选择晶体管和存储单元之间的虚拟存储单元。随着擦除操作中相应的虚拟存储器单元和选择晶体管之间的空间减小，较高的电压被施加到相应的虚拟存储单元。

2. 发明申请

US20080158994A1 Method for Erasing Data of NAND Flash Memory Device 失效
标题翻译：擦除NAND闪存器件数据的方法
公开(公告)号：US20080158994A1
公开(公告)日：2008-07-03
申请号：US11770872
申请日：2007-06-29
申请人： Hea Jong Yang
发明人： Hea Jong Yang
IPC分类号： G11C11/34 , G11C16/06
CPC分类号： G11C16/16 , G11C11/5635 , G11C16/0483 , G11C16/344 , G11C16/3445 , G11C2211/5621
摘要： A method for erasing data of a NAND flash memory device including memory cell blocks may include using a first erase voltage applied to memory cells of a block to be erased. A first verification may be performed to verify erased states of the memory cells using a first verify voltage different than a second verify voltage. Memory cells that have not passed the first verification process are classified as a first group and a verification is performed on memory cells that have passed the first verification using the second verify voltage. Memory cells that have passed the second verification are classified as a second group and memory cells that have not passed the second verification are classified as a third group. Then data of the memory cells of the three groups are erased using first, second and third step voltages and first, second and third erase voltages, respectively.
摘要翻译：用于擦除包括存储单元块的NAND快闪存储器件的数据的方法可以包括使用施加到要被擦除的块的存储单元的第一擦除电压。可以执行第一验证以使用不同于第二验证电压的第一验证电压来验证存储器单元的擦除状态。没有通过第一验证处理的存储单元被分类为第一组，并且对已经通过使用第二验证电压的第一验证的存储单元执行验证。已经通过第二次验证的存储单元被分类为第二组，并且未通过第二次验证的存储单元被分类为第三组。然后，分别使用第一，第二和第三阶跃电压以及第一，第二和第三擦除电压来擦除三组的存储单元的数据。

3. 发明授权

US09349456B2 Method of operating non-volatile memory device 有权
标题翻译：操作非易失性存储器件的方法
公开(公告)号：US09349456B2
公开(公告)日：2016-05-24
申请号：US13483521
申请日：2012-05-30
申请人： Se Jun Kim , Hea Jong Yang
发明人： Se Jun Kim , Hea Jong Yang
IPC分类号： G11C16/06 , G11C16/34 , G11C16/16 , G11C16/04
CPC分类号： G11C16/06 , G11C16/0483 , G11C16/16 , G11C16/3409
摘要： A method of operating a non-volatile memory device includes erasing a memory cell block, supplying a first drain turn-on voltage higher than a target level to the drain select line of the memory cell block, and performing a soft program operation by supplying a soft program voltage to the word lines of the memory cell block.
摘要翻译：一种操作非易失性存储器件的方法包括擦除存储器单元块，将高于目标电平的第一漏极导通电压提供给存储器单元块的漏极选择线，并且通过提供一个软编程电压到存储单元块的字线。

4. 发明申请

US20130159798A1 NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF 审中-公开
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US20130159798A1
公开(公告)日：2013-06-20
申请号：US13601366
申请日：2012-08-31
申请人： Hea Jong YANG
发明人： Hea Jong YANG
IPC分类号： G11C29/08 , G06F11/26
CPC分类号： G06F11/1048 , G11C16/00 , G11C29/026 , G11C29/028
摘要： A non-volatile memory device and an operating method thereof are provided. The non-volatile memory device includes a memory unit including a plurality of memory blocks and a cam block, a peripheral circuit unit configured to program memory cells included in the plurality of memory blocks and the cam block or read programmed data, and a processor configured to control the peripheral circuit unit to measure an offset voltage by memory cell group in the plurality of memory blocks to set a read voltage during a test read operation and control the peripheral circuit unit to perform a read operation by memory cell group by using a new read voltage during a read operation.
摘要翻译：提供了一种非易失性存储器件及其操作方法。非易失性存储器件包括：存储器单元，包括多个存储器块和凸轮块;外围电路单元，被配置为对包含在多个存储器块中的存储器单元和所述凸轮块或读取的编程数据进行编程;以及处理器配置控制外围电路单元测量多个存储器块中的存储单元组的偏移电压，以在测试读取操作期间设置读取电压，并且控制外围电路单元通过使用新的存储器单元组执行读取操作在读取操作期间读取电压。

5. 发明申请

US20120307567A1 METHOD OF OPERATING NON-VOLATILE MEMORY DEVICE 有权
标题翻译：操作非易失性存储器件的方法
公开(公告)号：US20120307567A1
公开(公告)日：2012-12-06
申请号：US13483521
申请日：2012-05-30
申请人： Se Jun KIM , Hea Jong Yang
发明人： Se Jun KIM , Hea Jong Yang
IPC分类号： G11C16/06 , G11C16/16
CPC分类号： G11C16/06 , G11C16/0483 , G11C16/16 , G11C16/3409
摘要： A method of operating a non-volatile memory device includes erasing a memory cell block, supplying a first drain turn-on voltage higher than a target level to the drain select line of the memory cell block, and performing a soft program operation by supplying a soft program voltage to the word lines of the memory cell block.
摘要翻译：一种操作非易失性存储器件的方法包括擦除存储器单元块，将高于目标电平的第一漏极导通电压提供给存储器单元块的漏极选择线，并且通过提供一个软编程电压到存储单元块的字线。

6. 发明授权

US07630255B2 Method for erasing data of NAND flash memory device 失效
标题翻译：擦除NAND闪存器件数据的方法
公开(公告)号：US07630255B2
公开(公告)日：2009-12-08
申请号：US11770872
申请日：2007-06-29
申请人： Hea Jong Yang
发明人： Hea Jong Yang
IPC分类号： G11C16/04
CPC分类号： G11C16/16 , G11C11/5635 , G11C16/0483 , G11C16/344 , G11C16/3445 , G11C2211/5621
摘要： A method for erasing data of a NAND flash memory device including memory cell blocks may include using a first erase voltage applied to memory cells of a block to be erased. A first verification may be performed to verify erased states of the memory cells using a first verify voltage different than a second verify voltage. Memory cells that have not passed the first verification process are classified as a first group and a verification is performed on memory cells that have passed the first verification using the second verify voltage. Memory cells that have passed the second verification are classified as a second group and memory cells that have not passed the second verification are classified as a third group. Then data of the memory cells of the three groups are erased using first, second and third step voltages and first, second and third erase voltages, respectively.
摘要翻译：用于擦除包括存储单元块的NAND快闪存储器件的数据的方法可以包括使用施加到要被擦除的块的存储单元的第一擦除电压。可以执行第一验证以使用不同于第二验证电压的第一验证电压来验证存储器单元的擦除状态。没有通过第一验证处理的存储单元被分类为第一组，并且对已经通过使用第二验证电压的第一验证的存储单元执行验证。已经通过第二次验证的存储单元被分类为第二组，并且未通过第二次验证的存储单元被分类为第三组。然后，分别使用第一，第二和第三阶跃电压以及第一，第二和第三擦除电压来擦除三组的存储单元的数据。

7. 发明申请

US20110261623A1 METHOD OF ERASING SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：擦除半导体存储器件的方法
公开(公告)号：US20110261623A1
公开(公告)日：2011-10-27
申请号：US13095156
申请日：2011-04-27
申请人： Hea Jong YANG , Hee Youl Lee , Sung Jae Chung , Hyun Heo , Jeong Hyong Yi , Yong Dae Park
发明人： Hea Jong YANG , Hee Youl Lee , Sung Jae Chung , Hyun Heo , Jeong Hyong Yi , Yong Dae Park
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , G11C16/16 , G11C16/32
摘要： A method of erasing a semiconductor memory device comprises grouping a plurality of word lines of each memory block into at least two groups based on intensity of disturbance between neighboring word lines; performing an erase operation by applying a ground voltage to all word lines of a selected memory block and by applying an erase voltage to a well of the selected memory block; and first increasing the ground voltage of one group of the groups to a positive voltage during the erase operation.
摘要翻译：擦除半导体存储器件的方法包括：基于相邻字线之间的干扰强度将每个存储器块的多个字线分组成至少两组; 通过对所选择的存储块的所有字线施加接地电压并通过向所选存储块的阱施加擦除电压来执行擦除操作; 并且在擦除操作期间首先将一组组的接地电压增加到正电压。

8. 发明授权

US08537632B2 Method of erasing semiconductor memory device 有权
标题翻译：擦除半导体存储器件的方法
公开(公告)号：US08537632B2
公开(公告)日：2013-09-17
申请号：US13095156
申请日：2011-04-27
申请人： Hea Jong Yang , Hee Youl Lee , Sung Jae Chung , Hyun Heo , Jeong Hyong Yi , Yong Dae Park
发明人： Hea Jong Yang , Hee Youl Lee , Sung Jae Chung , Hyun Heo , Jeong Hyong Yi , Yong Dae Park
IPC分类号： G11C7/00
CPC分类号： G11C16/0483 , G11C16/16 , G11C16/32
摘要： A method of erasing a semiconductor memory device comprises grouping a plurality of word lines of each memory block into at least two groups based on intensity of disturbance between neighboring word lines; performing an erase operation by applying a ground voltage to all word lines of a selected memory block and by applying an erase voltage to a well of the selected memory block; and first increasing the ground voltage of one group of the groups to a positive voltage during the erase operation.
摘要翻译：擦除半导体存储器件的方法包括：基于相邻字线之间的干扰强度将每个存储器块的多个字线分组成至少两组; 通过对所选择的存储块的所有字线施加接地电压并通过向所选存储块的阱施加擦除电压来执行擦除操作; 并且在擦除操作期间首先将一组组的接地电压增加到正电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式