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1. 发明授权

US09880235B2 Magnetic substance detection device 有权
公开(公告)号：US09880235B2
公开(公告)日：2018-01-30
申请号：US14763917
申请日：2014-03-18
申请人： Hamamatsu Kohden Co., Ltd.
发明人： Shinsuke Mochizuki
IPC分类号： G01R33/09 , H01F7/02 , H01F13/00
CPC分类号： G01R33/093 , H01F7/0278 , H01F7/0294 , H01F13/003
摘要： A magnetic substance detection device includes elongated magnets and ferromagnetic thin film magnetoresistance elements. The magnets extend in parallel with a Y-axis direction and are magnetized opposite to each other in a Z-axis direction. The ferromagnetic thin film magnetoresistance elements have respective linear segments extending substantially along the Y-axis direction on a plane of a substrate disposed in a path of lines of magnetic force between the magnets and change their resistances in response to a change in a magnetic field directed in a direction orthogonal to the Y-axis direction in the plane of the substrate. The magnets apply bias magnetic fields lower in intensity than a saturated magnetic field of the ferromagnetic thin film magnetoresistance elements to the ferromagnetic thin film magnetoresistance elements, respectively, in the direction orthogonal to the Y-axis direction in the plane of the substrate.

2. 发明申请

US20150369882A1 MAGNETIC SUBSTANCE DETECTION DEVICE 有权
标题翻译：磁性物质检测装置
公开(公告)号：US20150369882A1
公开(公告)日：2015-12-24
申请号：US14763917
申请日：2014-03-18
申请人： HAMAMATSU KOHDEN CO., LTD.
发明人： Shinsuke MOCHIZUKI
IPC分类号： G01R33/09 , H01F13/00 , H01F7/02
CPC分类号： G01R33/093 , H01F7/0278 , H01F7/0294 , H01F13/003
摘要： A magnetic substance detection device includes elongated magnets and ferromagnetic thin film magnetoresistance elements. The magnets extend in parallel with a Y-axis direction and are magnetized opposite to each other in a Z-axis direction. The ferromagnetic thin film magnetoresistance elements have respective linear segments extending substantially along the Y-axis direction on a plane of a substrate disposed in a path of lines of magnetic force between the magnets and change their resistances in response to a change in a magnetic field directed in a direction orthogonal to the Y-axis direction in the plane of the substrate. The magnets apply bias magnetic fields lower in intensity than a saturated magnetic field of the ferromagnetic thin film magnetoresistance elements to the ferromagnetic thin film magnetoresistance elements, respectively, in the direction orthogonal to the Y-axis direction in the plane of the substrate.
摘要翻译：磁性物质检测装置包括细长磁体和铁磁性薄膜磁阻元件。磁体与Y轴方向平行地延伸，并且在Z轴方向上相互磁化。铁磁薄膜磁阻元件具有基本上沿着Y轴方向延伸的线性段，所述线性段在设置在磁体之间的磁力线路径中的衬底的平面上，并响应于磁场指向的变化而改变其电阻在与基板的平面中的Y轴方向正交的方向上。这些磁体的强度比铁磁性薄膜磁阻元件的饱和磁场分别在与基板的平面中的Y轴方向正交的方向上分别施加到铁磁性薄膜磁阻元件上。

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