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1. 发明授权

US08702882B2 Method and system for online quality monitoring and control of a vibration welding process 有权
标题翻译：振动焊接过程在线质量监测与控制方法与系统
公开(公告)号：US08702882B2
公开(公告)日：2014-04-22
申请号：US12898075
申请日：2010-10-05
申请人： Wayne W. Cai , Jeffrey A Abell , Jason C. H. Tang , Michael Anthony Wincek , Paul J Boor , Paul F. Spacher , Shixin Jack Hu
发明人： Wayne W. Cai , Jeffrey A Abell , Jason C. H. Tang , Michael Anthony Wincek , Paul J Boor , Paul F. Spacher , Shixin Jack Hu
IPC分类号： B32B41/00
CPC分类号： B23K31/12 , B23K20/10 , B23K20/26 , B29C65/06 , B29C65/08 , B29C65/081 , B29C66/1122 , B29C66/21 , B29C66/43 , B29C66/474 , B29C66/524 , B29C66/5326 , B29C66/73921 , B29C66/8167 , B29C66/91212 , B29C66/91216 , B29C66/91221 , B29C66/91231 , B29C66/9161 , B29C66/9221 , B29C66/9231 , B29C66/95 , B29C66/951 , B29C66/9513 , B29C66/9517 , B29C66/961 , B29C66/965
摘要： A method for monitoring and controlling a vibration welding system includes collecting sensory data during formation of a welded joint using sensors positioned with respect to welding interfaces of a work piece. A host machine extracts a feature set from a welding signature collectively defined by the sensory data, compares and correlates the feature set with validated information in a library, and executes a control action(s) when the present feature set insufficiently matches the information. A welding system includes a sonotrode, sensors, and the host machine. The host machine is configured to execute the method noted above.
摘要翻译：一种用于监测和控制振动焊接系统的方法，包括使用相对于工件的焊接界面定位的传感器，在形成焊接接头期间收集感觉数据。主机从由感官数据共同定义的焊接签名中提取特征集，将特征集与库中的验证信息进行比较并相关，并且当当前特征集合与信息不足时执行控制动作。焊接系统包括超声波发生器，传感器和主机。主机配置为执行上述方法。

2. 发明授权

US08585438B2 Ground maintaining auto seizing coaxial cable connector 有权
标题翻译：地面保持自动抓住同轴电缆连接器
公开(公告)号：US08585438B2
公开(公告)日：2013-11-19
申请号：US13425458
申请日：2012-03-21
申请人： Neil H. Tang
发明人： Neil H. Tang
IPC分类号： H01R9/05
CPC分类号： H01R24/547 , H01R13/521 , H01R13/6583 , H01R2103/00
摘要： A coaxial cable female connector for inclusion in a port of a device or outer shell of a cable connector, includes a centrally located female pin within a pin carrier, the pin has an upper portion with two opposing resilient arms configured for receiving the central pin of a mating male connector. A non-electrically conductive cap is partially covered with an electrically conductive coating, and configured for seating upon said pin carrier, and for maintaining a ground or electrical connection between a shell of a male connector mated to a shell of the female connector, even if the male connector mating to the female connector loosens.
摘要翻译：用于包含在电缆连接器的装置或外壳的端口中的同轴电缆阴连接器包括位于销托架内的位于中心的阴销，该销具有上部，其具有两个相对的弹性臂，所述两个相对的弹性臂构造成用于接收一个配对的公连接器。非导电盖部分地覆盖有导电涂层，并且构造成用于安置在所述销托架上，并且用于在与阴连接器的外壳配合的阳连接器的外壳之间保持接地或电连接，即使与母连接器配合的公连接器松动。

3. 发明申请

US20130252462A1 GROUND MAINTAINING AUTO SEIZING COAXIAL CABLE CONNECTOR 有权
标题翻译：接地保护自动切线同轴电缆连接器
公开(公告)号：US20130252462A1
公开(公告)日：2013-09-26
申请号：US13425458
申请日：2012-03-21
申请人： Neil H. Tang
发明人： Neil H. Tang
IPC分类号： H01R9/05
CPC分类号： H01R24/547 , H01R13/521 , H01R13/6583 , H01R2103/00
摘要： A coaxial cable female connector for inclusion in a port of a device or outer shell of a cable connector, includes a centrally located female pin within a pin carrier, the pin has an upper portion with two opposing resilient arms configured for receiving the central pin of a mating male connector. A non-electrically conductive cap is partially covered with an electrically conductive coating, and configured for seating upon said pin carrier, and for maintaining a ground or electrical connection between a shell of a male connector mated to a shell of the female connector, even if the male connector mating to the female connector loosens.
摘要翻译：用于包含在电缆连接器的装置或外壳的端口中的同轴电缆阴连接器包括位于销托架内的位于中心的阴销，该销具有上部，其具有两个相对的弹性臂，所述两个相对的弹性臂构造成用于接收一个配对的公连接器。非导电盖部分地覆盖有导电涂层，并且构造成用于安置在所述销托架上，并且用于在与阴连接器的外壳配合的阳连接器的外壳之间保持接地或电连接，即使与母连接器配合的公连接器松动。

4. 发明申请

US20090033308A1 COMPONENT RELIABILITY BUDGETING SYSTEM 有权
标题翻译：组件可靠性预算系统
公开(公告)号：US20090033308A1
公开(公告)日：2009-02-05
申请号：US12245360
申请日：2008-10-03
申请人： Siva G. Narendra , James W. Tschanz , Vivek K. De , Stephen H. Tang
发明人： Siva G. Narendra , James W. Tschanz , Vivek K. De , Stephen H. Tang
IPC分类号： G05F5/00
CPC分类号： G06F1/206 , Y02D10/16
摘要： A system may include acquisition of a supply voltage information representing past supply voltages supplied to an electrical component, acquisition of a temperature information representing past temperatures of the electrical component, and control of a performance characteristic of the electrical component based on the supply voltage information and the temperature information. Some embodiments may further include determination of a reliability margin based on the supply voltage information, the temperature information, and on a reliability specification of the electrical component, and change of the performance characteristic based on the reliability margin.
摘要翻译：系统可以包括获取表示提供给电气部件的过去电源电压的电源电压信息，基于电源电压信息获取表示电气部件的过去温度的温度信息和电气部件的性能特性的控制，以及温度信息。一些实施例还可以包括基于电源电压信息，温度信息以及电气部件的可靠性规格以及基于可靠性裕度的性能特性的改变来确定可靠性裕度。

5. 发明授权

US07355246B2 Memory cell without halo implant 有权
标题翻译：无光晕植入的记忆细胞
公开(公告)号：US07355246B2
公开(公告)日：2008-04-08
申请号：US11268430
申请日：2005-11-07
申请人： Ali Keshavarzi , Stephen H. Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
发明人： Ali Keshavarzi , Stephen H. Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
IPC分类号： H01L29/76
CPC分类号： G11C11/404 , G11C2211/4016 , H01L27/0207 , H01L27/0214 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： Some embodiments provide a memory cell comprising a body region doped with charge carriers of a first type, a source region disposed in the body region and doped with charge carriers of a second type, and a drain region disposed in the body region and doped with charge carriers of the second type. According to some embodiments, the body region, the source region, and the drain region are oriented in a first direction, the body region and the source region form a first junction, and the body region and the drain region form a second junction. Moreover, a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased. Some embodiments further include a transistor oriented in a second direction, wherein the second direction is not parallel to the first direction.
摘要翻译：一些实施例提供一种存储单元，其包括掺杂有第一类型的电荷载体的体区，设置在体区中的源极区，并掺杂有第二类型的电荷载流子，以及设置在体区中的掺杂电荷第二种载体。根据一些实施例，身体区域，源区域和漏极区域在第一方向上定向，身体区域和源区域形成第一结，并且体区域和漏区域形成第二结。此外，在第一结无偏置的情况下，从体区到源极区的第一结的导电率基本上小于从体区到漏区的第二结的导电率，在第二结是不偏不倚的一些实施例还包括在第二方向上取向的晶体管，其中第二方向不平行于第一方向。

6. 外观设计

USD563900S1 Signal and power bypass switch assembly 有权
标题翻译：信号和电源旁路开关总成
公开(公告)号：USD563900S1
公开(公告)日：2008-03-11
申请号：US29286271
申请日：2007-04-30
申请人： Neil H. Tang
设计人： Neil H. Tang

7. 发明授权

US07321502B2 Non volatile data storage through dielectric breakdown 有权
标题翻译：非易失性数据存储通过介质击穿
公开(公告)号：US07321502B2
公开(公告)日：2008-01-22
申请号：US10956285
申请日：2004-09-30
申请人： Fabrice Paillet , Ali Keshavarzi , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H. Tang , Alavi Mohsen , Vivek K. De
发明人： Fabrice Paillet , Ali Keshavarzi , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H. Tang , Alavi Mohsen , Vivek K. De
IPC分类号： G11C17/00
CPC分类号： G11C17/16 , G11C17/18
摘要： A method is described that induced dielectric breakdown within a capacitor's dielectric material while driving a current through the capacitor. The current is specific to data that is being written into the capacitor. The method also involves reading the data by interpreting behavior of the capacitor that is determined by the capacitor's resistance, where, the capacitor's resistance is a consequence of the inducing and the driving.
摘要翻译：描述了一种在驱动电流通过电容器的同时在电容器的电介质材料内感应电介质击穿的方法。电流特定于正在写入电容器的数据。该方法还涉及通过解释由电容器电阻确定的电容器的行为来读取数据，其中电容器的电阻是诱导和驱动的结果。

8. 发明授权

US06992339B2 Asymmetric memory cell 有权
公开(公告)号：US06992339B2
公开(公告)日：2006-01-31
申请号：US10750572
申请日：2003-12-31
申请人： Ali Keshavarzi , Stephen H. Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
发明人： Ali Keshavarzi , Stephen H. Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad M. Khellah , Yibin Ye , Shih-Lien L. Lu , Vivek K. De
IPC分类号： H01L27/10
CPC分类号： G11C11/404 , G11C2211/4016 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L29/7841
摘要： Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.

9. 发明授权

US06906973B1 Bit-line droop reduction 失效
标题翻译：位线下垂减少
公开(公告)号：US06906973B1
公开(公告)日：2005-06-14
申请号：US10746148
申请日：2003-12-24
申请人： Dinesh Somasekhar , Yibin Ye , Muhammad M. Khellah , Fabrice Paillet , Stephen H. Tang , Ali Keshavarzi , Shih-Lien L. Lu , Vivek K. De
发明人： Dinesh Somasekhar , Yibin Ye , Muhammad M. Khellah , Fabrice Paillet , Stephen H. Tang , Ali Keshavarzi , Shih-Lien L. Lu , Vivek K. De
IPC分类号： G11C7/00 , G11C7/12
CPC分类号： G11C7/12
摘要： Some embodiments provide pre-charge of a bit-line coupled to a memory cell to a reference voltage using a pre-charge device, discharge of the bit-line based on a value stored by the memory cell, injection during the discharge, of a first current into the bit-line using the pre-charge device, and injection, during the discharge, of a second current into a reference bit-line using a second pre-charge device. Also during the discharge, a difference is sensed between a voltage on the bit-line and a voltage on the reference bit-line.
摘要翻译：一些实施例使用预充电器件将耦合到存储器单元的位线预充电至参考电压，基于存储器单元存储的值，放电期间的注入，放电期间的位线放电，使用预充电器件进入位线的第一电流，以及在放电期间使用第二预充电器件将第二电流注入参考位线。此外，在放电期间，在位线上的电压和参考位线上的电压之间感测到差异。

10. 发明授权

US06693332B2 Current reference apparatus 失效
标题翻译：电流参考装置
公开(公告)号：US06693332B2
公开(公告)日：2004-02-17
申请号：US10025047
申请日：2001-12-19
申请人： Siva G. Narendra , Stephen H. Tang , Zachary Keer , Vivek K. De
发明人： Siva G. Narendra , Stephen H. Tang , Zachary Keer , Vivek K. De
IPC分类号： H01L2976
CPC分类号： G05F3/245 , Y10S257/919
摘要： A current reference, which may be fabricated on a die, as part of an integrated circuit, or in various other forms, is disclosed. The current reference includes two current sources, both of which provide a substantially temperature stable output current, which may use a differencing circuit to provide a reference output current having a magnitude approximately equal to the difference between the magnitudes of the two substantially temperature stable output currents.
摘要翻译：公开了可以在芯片上制造的作为集成电路的一部分或以各种其它形式的电流参考。电流参考文献包括两个电流源，它们都提供基本上温度稳定的输出电流，其可以使用差分电路来提供参考输出电流，该参考输出电流的幅度近似等于两个基本上温度稳定的输出电流的幅度之差。

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