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1. 发明申请

US20100221877A1 METHOD OF MANUFACTURING A SOI STRUCTURE HAVING A SIGE LAYER INTERPOSED BETWEEN THE SILICON AND THE INSULATOR 有权
标题翻译：制造具有硅和绝缘体之间的信号层的SOI结构的方法
公开(公告)号：US20100221877A1
公开(公告)日：2010-09-02
申请号：US12759480
申请日：2010-04-13
申请人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
发明人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
IPC分类号： H01L21/762
CPC分类号： H01L29/66772 , H01L21/76243 , H01L21/76254 , H01L21/76259 , H01L29/78687
摘要： A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over a first substrate, and then an insulating layer is formed on the second SiGe layer. Then, impurity ions are implanted into a predetermined location of the first substrate underlying the first SiGe layer to form an impurity implantation region. A second substrate is bonded to the insulating layer on the first substrate. After the first substrate is separated along the impurity implantation region and removed, the first SiGe layer remaining on the surface of the separated region is removed so that the surface of the silicon layer may be exposed.
摘要翻译：一种半导体结构以及在硅与绝缘体之间插入硅锗（SiGe）层的绝缘体上硅（SOI）结构的制造方法。根据一种制造方法，在第一衬底上依次外延生长第一SiGe层，硅层和第二SiGe层，然后在第二SiGe层上形成绝缘层。然后，将杂质离子注入位于第一SiGe层下面的第一衬底的预定位置以形成杂质注入区。第二基板结合到第一基板上的绝缘层。在沿着杂质注入区域分离第一衬底并去除之后，去除残留在分离区域表面上的第一SiGe层，以使硅层的表面露出。

2. 发明申请

US20050242396A1 SOI structure having a sige layer interposed between the silicon and the insulator 有权
标题翻译：具有介于硅和绝缘体之间的奇特层的SOI结构
公开(公告)号：US20050242396A1
公开(公告)日：2005-11-03
申请号：US11150292
申请日：2005-06-13
申请人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
发明人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
IPC分类号： H01L21/336 , H01L21/762 , H01L29/786 , H01L27/01
CPC分类号： H01L29/66772 , H01L21/76243 , H01L21/76254 , H01L21/76259 , H01L29/78687
摘要： A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over a first substrate, and then an insulating layer is formed on the second SiGe layer. Then, impurity ions are implanted into a predetermined location of the first substrate underlying the first SiGe layer to form an impurity implantation region. A second substrate is bonded to the insulating layer on the first substrate. After the first substrate is separated along the impurity implantation region and removed, the first SiGe layer remaining on the surface of the separated region is removed so that the surface of the silicon layer may be exposed.
摘要翻译：一种半导体结构以及在硅与绝缘体之间插入硅锗（SiGe）层的绝缘体上硅（SOI）结构的制造方法。根据一种制造方法，在第一衬底上依次外延生长第一SiGe层，硅层和第二SiGe层，然后在第二SiGe层上形成绝缘层。然后，将杂质离子注入位于第一SiGe层下面的第一衬底的预定位置以形成杂质注入区。第二基板结合到第一基板上的绝缘层。在沿着杂质注入区域分离第一衬底并除去之后，去除残留在分离区域表面上的第一SiGe层，以使硅层的表面露出。

3. 发明授权

US07180138B2 SOI structure having a SiGe layer interposed between the silicon and the insulator 有权
标题翻译： SOI结构具有介于硅与绝缘体之间的SiGe层
公开(公告)号：US07180138B2
公开(公告)日：2007-02-20
申请号：US11150292
申请日：2005-06-13
申请人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
发明人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
IPC分类号： H01L27/01
CPC分类号： H01L29/66772 , H01L21/76243 , H01L21/76254 , H01L21/76259 , H01L29/78687
摘要： A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over a first substrate, and then an insulating layer is formed on the second SiGe layer. Then, impurity ions are implanted into a predetermined location of the first substrate underlying the first SiGe layer to form an impurity implantation region. A second substrate is bonded to the insulating layer on the first substrate. After the first substrate is separated along the impurity implantation region and removed, the first SiGe layer remaining on the surface of the separated region is removed so that the surface of the silicon layer may be exposed.
摘要翻译：一种半导体结构以及在硅与绝缘体之间插入硅锗（SiGe）层的绝缘体上硅（SOI）结构的制造方法。根据一种制造方法，在第一衬底上依次外延生长第一SiGe层，硅层和第二SiGe层，然后在第二SiGe层上形成绝缘层。然后，将杂质离子注入位于第一SiGe层下面的第一衬底的预定位置以形成杂质注入区。第二基板结合到第一基板上的绝缘层。在沿着杂质注入区域分离第一衬底并去除之后，去除残留在分离区域表面上的第一SiGe层，以使硅层的表面露出。

4. 发明申请

US20060063356A1 SOI structure having a sige layer interposed between the silicon and the insulator 有权
标题翻译：具有介于硅和绝缘体之间的奇特层的SOI结构
公开(公告)号：US20060063356A1
公开(公告)日：2006-03-23
申请号：US11270508
申请日：2005-11-10
申请人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
发明人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
IPC分类号： H01L21/30 , H01L21/20
CPC分类号： H01L29/66772 , H01L21/76243 , H01L21/76254 , H01L21/76259 , H01L29/78687
摘要： A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over a first substrate, and then an insulating layer is formed on the second SiGe layer. Then, impurity ions are implanted into a predetermined location of the first substrate underlying the first SiGe layer to form an impurity implantation region. A second substrate is bonded to the insulating layer on the first substrate. After the first substrate is separated along the impurity implantation region and removed, the first SiGe layer remaining on the surface of the separated region is removed so that the surface of the silicon layer may be exposed.
摘要翻译：一种半导体结构以及在硅与绝缘体之间插入硅锗（SiGe）层的绝缘体上硅（SOI）结构的制造方法。根据一种制造方法，在第一衬底上依次外延生长第一SiGe层，硅层和第二SiGe层，然后在第二SiGe层上形成绝缘层。然后，将杂质离子注入位于第一SiGe层下面的第一衬底的预定位置以形成杂质注入区。第二基板结合到第一基板上的绝缘层。在沿着杂质注入区域分离第一衬底并去除之后，去除残留在分离区域表面上的第一SiGe层，以使硅层的表面露出。

5. 发明授权

US07947572B2 Method of manufacturing a SOI structure having a SiGe layer interposed between the silicon and the insulator 有权
标题翻译：制造在硅与绝缘体之间插入SiGe层的SOI结构体的制造方法
公开(公告)号：US07947572B2
公开(公告)日：2011-05-24
申请号：US12759480
申请日：2010-04-13
申请人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
发明人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
IPC分类号： H01L21/30
CPC分类号： H01L29/66772 , H01L21/76243 , H01L21/76254 , H01L21/76259 , H01L29/78687
摘要： A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over a first substrate, and then an insulating layer is formed on the second SiGe layer. Then, impurity ions are implanted into a predetermined location of the first substrate underlying the first SiGe layer to form an impurity implantation region. A second substrate is bonded to the insulating layer on the first substrate. After the first substrate is separated along the impurity implantation region and removed, the first SiGe layer remaining on the surface of the separated region is removed so that the surface of the silicon layer may be exposed.
摘要翻译：一种半导体结构以及在硅与绝缘体之间插入硅锗（SiGe）层的绝缘体上硅（SOI）结构的制造方法。根据一种制造方法，在第一衬底上依次外延生长第一SiGe层，硅层和第二SiGe层，然后在第二SiGe层上形成绝缘层。然后，将杂质离子注入位于第一SiGe层下面的第一衬底的预定位置以形成杂质注入区。第二基板结合到第一基板上的绝缘层。在沿着杂质注入区域分离第一衬底并去除之后，去除残留在分离区域表面上的第一SiGe层，以使硅层的表面露出。

6. 发明授权

US07741193B2 SOI structure having a SiGe layer interposed between the silicon and the insulator 有权
标题翻译： SOI结构具有介于硅与绝缘体之间的SiGe层
公开(公告)号：US07741193B2
公开(公告)日：2010-06-22
申请号：US11270508
申请日：2005-11-10
申请人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
发明人： Jeagun Park , Kenji Tomizawa , Gonsub Lee , Eiji Kamiyama
IPC分类号： H01L21/30
CPC分类号： H01L29/66772 , H01L21/76243 , H01L21/76254 , H01L21/76259 , H01L29/78687
摘要： A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over a first substrate, and then an insulating layer is formed on the second SiGe layer. Then, impurity ions are implanted into a predetermined location of the first substrate underlying the first SiGe layer to form an impurity implantation region. A second substrate is bonded to the insulating layer on the first substrate. After the first substrate is separated along the impurity implantation region and removed, the first SiGe layer remaining on the surface of the separated region is removed so that the surface of the silicon layer may be exposed.
摘要翻译：一种半导体结构以及在硅与绝缘体之间插入硅锗（SiGe）层的绝缘体上硅（SOI）结构的制造方法。根据一种制造方法，在第一衬底上依次外延生长第一SiGe层，硅层和第二SiGe层，然后在第二SiGe层上形成绝缘层。然后，将杂质离子注入位于第一SiGe层下面的第一衬底的预定位置以形成杂质注入区。第二基板结合到第一基板上的绝缘层。在沿着杂质注入区域分离第一衬底并去除之后，去除残留在分离区域表面上的第一SiGe层，以使硅层的表面露出。

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