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1. 发明申请

US20120149212A1 CVD METHOD AND CVD REACTOR 有权
标题翻译： CVD方法和CVD反应器
公开(公告)号：US20120149212A1
公开(公告)日：2012-06-14
申请号：US13391609
申请日：2010-08-04
申请人： Gerhard Karl Strauch
发明人： Gerhard Karl Strauch
IPC分类号： H01L21/31 , C23C16/458
CPC分类号： C23C16/4412
摘要： The invention relates to a device and a method for depositing semiconductor layers, in particular made of a plurality of components on one or more substrates (21) contacting a susceptor (2), wherein process gases can be introduced into the process chamber (1) through flow channels (15, 16; 18) of a gas inlet organ (8), together with a carrier gas, said carrier gas permeating the process chamber (1) substantially parallel to the susceptor and exits through a gas outlet organ (7), wherein the products of decomposition build up the process gases as a coating at least in regions on the substrate surface and on the surface of the gas outlet organ (7) disposed downstream of the susceptor (2) at a distance (D) from the downstream edge (21) thereof. In order to deposit contamination-free layers in sequential process steps without intermediate replacement or intermediate cleaning of the gas outlet organ, according to the invention the distance (D) is great enough to prevent products of decomposition outgassing from the coating of the gas outlet organ (7) at the second process temperature from reaching the substrate (21) by counterflow diffusion.
摘要翻译：本发明涉及一种用于沉积半导体层的器件和方法，特别是由一个或多个接触基座（2）的衬底（21）上的多个部件制成，其中工艺气体可被引入处理室（1）通过气体入口器官（8）的流动通道（15,16; 18）与载气一起，所述载气渗透到处理室（1），基本上平行于基座并通过气体出口器（7）离开，其中分解产物至少在衬底表面上的区域和位于基座（2）下游的气体出口器具（7）的表面上至少形成处理气体，距离（D）距离下游边缘（21）。为了在连续的工艺步骤中沉积无污染层，而没有中间更换或中间清洁气体出口器官，根据本发明，距离（D）足够大以防止从气体出口器官的涂层分解出气的产物（7）在第二工艺温度下通过逆流扩散到达衬底（21）。

2. 发明申请

US20110161985A1 METHOD FOR ACCESS TO A TRANSMISSION MEDIUM 审中-公开
标题翻译：用于接收传输介质的方法
公开(公告)号：US20110161985A1
公开(公告)日：2011-06-30
申请号：US13060568
申请日：2009-10-28
申请人： Gerhard Karl Willi Witte , Wolfgang Martin Kallweit
发明人： Gerhard Karl Willi Witte , Wolfgang Martin Kallweit
IPC分类号： G06F9/46
CPC分类号： G06F9/541
摘要： The invention relates to a method for preparing or effecting access, in data transmission, from a first application which is run on a client data processing device to a transmission medium which is coupled to the client data processing device. The steps performed are: providing a second application which includes at least one interface for converting the format of information, transmitted by the first application, to a standard format which is predetermined by the second application; and registering the second application with the client data processing device or installing the second application on the client data processing device in order to transmit the information of the first application in the standard format between the second application and the transmission medium or to enable the information of the first application to be transmitted in the standard format between the second application and the transmission medium.
摘要翻译：本发明涉及一种用于在数据传输中从在客户数据处理设备上运行到耦合到客户端数据处理设备的传输介质的第一应用程序进行访问的方法。执行的步骤是：提供第二应用，其包括用于将由第一应用发送的信息的格式转换成由第二应用预定的标准格式的至少一个接口; 以及将所述第二应用与所述客户端数据处理设备注册或将所述第二应用安装在所述客户端数据处理设备上，以便在所述第二应用和所述传输介质之间以标准格式发送所述第一应用的信息，或者使得能够在第二应用和传输介质之间以标准格式发送的第一应用。

3. 发明授权

US07709398B2 Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned 失效
标题翻译：使用两种处理气体沉积半导体层的方法和装置，其中一种是预处理的
公开(公告)号：US07709398B2
公开(公告)日：2010-05-04
申请号：US11262874
申请日：2005-10-31
申请人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
发明人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
IPC分类号： H01L21/31
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45574 , Y10S438/905
摘要： The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction toward the substrate holder through a multitude of openings, which are distributed over a surface of a gas inlet element, said surface being located opposite the substrate holder. According to the invention, the second process gas is preconditioned with a plasma before entering the process chamber, and it enters the process chamber at the edge of the substrate holder directly thereabove and flows parallel to the substrate holder surface.
摘要翻译：本发明涉及一种用于将至少一层，特别是半导体层沉积在至少一个衬底上的方法和装置，所述至少一个衬底位于反应器的处理室内，同时由衬底保持器支撑。该层由以固定的化学计量比提供的至少两种材料组分组成，其以第一和第二反应气体的形式引入反应器，并且一部分分解产物形成层，由此供应具有低热活化能的第一反应气体决定层的生长速率，并且具有高热活化能的第二反应气体被过量供应并且被预处理，特别是由独立的供应能源。第一反应气体通过分布在气体入口元件的表面上的多个开口朝向衬底保持器的方向流动，所述表面位于衬底保持器相对的位置。根据本发明，第二工艺气体在进入处理室之前用等离子体预处理，并且它直接进入衬底保持器的边缘处的处理室，并平行于衬底保持器表面流动。

4. 发明申请

US20090107401A1 DEVICE FOR VAPORIZING CONDENSED SUBSTANCES 审中-公开
标题翻译：用于蒸发稠化物质的装置
公开(公告)号：US20090107401A1
公开(公告)日：2009-04-30
申请号：US11722700
申请日：2005-12-16
申请人： Markus Reinhold , Gerhard Karl Strauch , Markus Gersdorff , Nico Meyer , Florenz Kittle
发明人： Markus Reinhold , Gerhard Karl Strauch , Markus Gersdorff , Nico Meyer , Florenz Kittle
IPC分类号： C23C16/448
CPC分类号： C23C14/228 , B01B1/005 , C23C14/243 , H01L51/0008 , H01L51/56
摘要： The invention relates to a device for the vaporisation of condensed (solid or liquid) materials, in particular, of starting materials for OLED production, comprising a container (1), for housing the material with a gas supply line (2) and a gas exhaust line (3). A number of inserts (4) for housing the material are arranged in the container (1) which have an individual flow thereover, whereby the inserts (4) are arranged one over the other in the vertical direction and comprise recesses (5) for housing the material in the horizontal direction over which a flow is possible. Several gas flows may flow in parallel over several inserts.
摘要翻译：本发明涉及一种用于蒸发冷凝（固体或液体）材料，特别是用于OLED生产的起始材料的装置，其包括容器（1），用于将材料与气体供应管线（2）和气体排气管（3）。用于容纳材料的多个插入件（4）布置在容器（1）中，其中具有单独的流动，由此插入件（4）在垂直方向上彼此重叠地布置，并且包括用于容纳的凹部（5）在水平方向上的材料可以在其上流动。几个气体流可以平行流过几个插入物。

5. 发明授权

US07332038B2 Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates 有权
标题翻译：用于在一个或多个，特别是同样的结晶基底上沉积特别是晶体层的装置
公开(公告)号：US07332038B2
公开(公告)日：2008-02-19
申请号：US10378493
申请日：2003-03-03
申请人： Holger Jürgensen , Gerhard Karl Strauch , Johannes Käppeler
发明人： Holger Jürgensen , Gerhard Karl Strauch , Johannes Käppeler
IPC分类号： C23C16/00 , C23C16/455 , C23C16/458 , H01L21/306
CPC分类号： C30B25/14 , C23C16/4412
摘要： A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber having a cover plate that is situated at a distance from the support plate; and a gas outlet ring formed of solid graphite which forms the outer limit of the process chamber and which has a plurality of radial gas outlets.
摘要翻译：一种用于将晶体层沉积在处理室中的一个或多个基底上的装置，包括：反向加热支撑板，其形成处理室的壁并被高频加热并由惰性涂覆的石墨形成; 位于处理室中心的气体入口机构，其具有位于离支撑板一定距离处的盖板; 以及由固体石墨形成的气体出口环，其形成处理室的外部极限并且具有多个径向气体出口。

6. 发明授权

US07147718B2 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates 失效
标题翻译：特别是在特别是结晶底物上沉积结晶层的装置和方法
公开(公告)号：US07147718B2
公开(公告)日：2006-12-12
申请号：US10378495
申请日：2003-03-03
申请人： Holger Jürgensen , Gerhard Karl Strauch , Johannes Käppeler
发明人： Holger Jürgensen , Gerhard Karl Strauch , Johannes Käppeler
IPC分类号： C23C16/455 , C23C16/00 , C23C16/23
CPC分类号： C23C16/45572 , C23C16/455 , C30B25/14
摘要： The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.
摘要翻译：本发明涉及一种用于通过反应气体在处理室中的一个或几个特别是同等结晶的衬底上沉积特别是结晶层的装置和方法，所述反应气体被供给到处理室，在那里它们被热解地反应。处理室具有与第一壁相对的第一壁和第二壁。第一壁设置有至少一个加热的衬底保持器，借助于气体入口装置引导至少一个反应气体。根据本发明，可以避免源气体的过早分解和具有分解产物的气流的局部过饱和，由此气体入口装置是液体冷却的。

7. 发明授权

US3947131A Windshield soil detector 失效
标题翻译： WINDSHIELD土壤探测器
公开(公告)号：US3947131A
公开(公告)日：1976-03-30
申请号：US520848
申请日：1974-11-04
申请人： Gerhard Karl
发明人： Gerhard Karl
IPC分类号： B60J1/20 , B60R16/02 , B60R16/023 , B60S1/08 , G01N21/94 , G01N21/48
CPC分类号： B60R16/0237 , B60J1/20 , B60S1/0822 , B60S1/0837 , G01N21/94
摘要： A device for indicating the soiling of a sheet of glass or windshield comprising a source that emits light through the windshield onto the soiled surface at the angle of total reflection, a photometer that registers the changes caused in the light returned through the glass as the result of the soiling of the windshield, and an indicating device or signal transmitter connected to the photometer.

8. 发明授权

US1432848A Pump 失效
公开(公告)号：US1432848A
公开(公告)日：1922-10-24
申请号：US53078722
申请日：1922-01-21
申请人： GERHARD KARL F
发明人： GERHARD KARL F
IPC分类号： F04B47/02
CPC分类号： F04B47/02 , Y10T74/18968

9. 发明授权

US1149126A Weeder and cultivator. 失效
公开(公告)号：US1149126A
公开(公告)日：1915-08-03
申请号：US1914854325
申请日：1914-07-31
申请人： GERHARD KARL F
发明人： GERHARD KARL F
CPC分类号： A01B33/04

10. 发明授权

US1006843A Pump. 失效
公开(公告)号：US1006843A
公开(公告)日：1911-10-24
申请号：US1911635534
申请日：1911-06-27
申请人： GERHARD KARL F
发明人： GERHARD KARL F
CPC分类号： F04B3/00 , F02M59/26

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