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1. 发明申请

US20100258845A1 Semiconductor device and method for manufacturing same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100258845A1
公开(公告)日：2010-10-14
申请号：US12659336
申请日：2010-03-04
申请人： Toshiharu Marui , Fumihiko Toda
发明人： Toshiharu Marui , Fumihiko Toda
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02579 , H01L29/155 , H01L29/2003 , H01L29/7787
摘要： There is provided a semiconductor device capable of deactivating 2-dimensional electron gas (2DEG) layers in a buffer layer having a multi-layer film structure. The buffer layer is formed in a high electron mobility transistor (HEMT) formed on a silicon (Si) substrate. The semiconductor device includes the substrate whose uppermost layer is the Si layer, the buffer layer constructed by alternately stacking a plurality of first layers and a plurality of second layers on the Si layer, third layer serving as an electron transit layer formed on the buffer layer, and fourth layer serving as an electron supplying layer formed on the third layer. The first layer is composed of the same material as for the third layer. A p-type impurity is introduced into the first layers so as to deactivate the 2DEG layers formed in the first layer near interfaces between the first and second layers.
摘要翻译：提供了能够使具有多层膜结构的缓冲层中的二维电子气（2DEG）层失活的半导体器件。缓冲层形成在形成在硅（Si）衬底上的高电子迁移率晶体管（HEMT）中。半导体器件包括其最上层为Si层的衬底，通过在Si层上交替堆叠多个第一层和多个第二层而构成的缓冲层，用作形成在缓冲层上的电子迁移层的第三层以及用作形成在第三层上的电子供给层的第四层。第一层由与第三层相同的材料组成。 p型杂质被引入到第一层中，以使在第一层和第二层之间的界面附近形成在第一层中的2DEG层失活。

2. 发明申请

US20080246959A1 Method of manufacturing nitride semiconductor device including SiC substrate and apparatus for manufacturing nitride semiconductor device 有权
公开(公告)号：US20080246959A1
公开(公告)日：2008-10-09
申请号：US12076837
申请日：2008-03-24
申请人： Fumihiko Toda
发明人： Fumihiko Toda
IPC分类号： G01N21/00
CPC分类号： H01L22/22 , H01L2924/0002 , H01L2924/00
摘要： Excitation light is irradiated onto a GaN layer on a silicon carbide substrate constituting a layered product that is set on a stage. Then light is emitted from a defective part caused by a structural defect of the silicon carbide substrate out of the GaN layer. By using this light luminescence phenomena, a position of a defective part of the silicon carbide substrate can be detected.

3. 发明申请

US20090212324A1 HETEROJUNCTION FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：异位场效应晶体管
公开(公告)号：US20090212324A1
公开(公告)日：2009-08-27
申请号：US12366871
申请日：2009-02-06
申请人： Isao TAMAI , Fumihiko Toda , Shinichi Hoshi
发明人： Isao TAMAI , Fumihiko Toda , Shinichi Hoshi
IPC分类号： H01L29/772
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66431
摘要： An aspect of the invention provides a heterojunction field effect transistor that comprises: a base; a first GaN channel layer formed on the base; an AlN electron supply layer formed on the first GaN layer, and a second GaN cap layer formed on the AlN layer.
摘要翻译：本发明的一个方面提供一种异质结场效应晶体管，其包括：基极; 形成在所述基底上的第一GaN沟道层; 形成在第一GaN层上的AlN电子供给层和形成在AlN层上的第二GaN覆盖层。

4. 发明申请

US20090001381A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20090001381A1
公开(公告)日：2009-01-01
申请号：US12153953
申请日：2008-05-28
申请人： Toshiharu Marui , Hideyuki Okita , Shinichi Hoshi , Fumihiko Toda
发明人： Toshiharu Marui , Hideyuki Okita , Shinichi Hoshi , Fumihiko Toda
IPC分类号： H01L29/778
CPC分类号： H01L29/0653 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device includes a substrate, laminated layers provided on the substrate. The laminated layers include an AlGaN barrier layer as an uppermost layer. A gate electrode is provided in a channel region of the laminated layers. A source electrode and a drain electrode are provided so as to face each other via the channel region interposed therebetween. A silicon nitride film is formed to cover an exposed surface of the laminated layers exposed via the gate electrode, the source electrode and the drain electrode. The silicon nitride film has characteristics that an etching rate thereof is in a range from 1 nm per/min to 2 nm/min for an etchant in which hydrofluoric acid having a concentration of 50 weight percent and ammonium fluoride having a concentration of 40 weight percent are mixed at a mixing ratio of 1:9.
摘要翻译：半导体器件包括衬底，设置在衬底上的层叠层。层叠层包括作为最上层的AlGaN阻挡层。栅电极设置在层叠层的沟道区域中。源电极和漏电极经由插入其间的沟道区域彼此面对地设置。形成氮化硅膜以覆盖经由栅电极，源电极和漏电极露出的层叠层的暴露表面。氮化硅膜的特征在于，对于浓度为50重量％的氢氟酸和浓度为40重量％的氟化铵的蚀刻剂，其蚀刻速率在1nm / min〜2nm / min的范围内以1:9的混合比混合。

5. 发明申请

US20080176366A1 Method for fabricating AIGaN/GaN-HEMT using selective regrowth 审中-公开
标题翻译：使用选择性再生长制造AIGaN / GaN-HEMT的方法
公开(公告)号：US20080176366A1
公开(公告)日：2008-07-24
申请号：US11984015
申请日：2007-11-13
申请人： Juro Mita , Fumihiko Toda , Toshiharu Marui
发明人： Juro Mita , Fumihiko Toda , Toshiharu Marui
IPC分类号： H01L21/338
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/42316 , H01L29/66462
摘要： A semiconductor body includes, on a substrate, a stack of buffer layer, UID-GaN layer overlying the buffer layer, and UID-AlGaN layer overlying the UID-GaN layer. On the surface of the UID-AlGaN layer, an insulation film is deposited and patterned. An n+-GaN layer is selectively regrown directly on a region of the surface of the semiconductor body other than the insulation film using the patterned insulation film as a mask without etching the surface of the semiconductor body. A portion of the selectively regrown n+-GaN layer corresponding to a region reserved for an ohmic contact electrode is defined and the ohmic contact electrode is formed on the region. An opening exposing a region reserved for a gate electrode is defined and formed within the insulation SiO2 layer, and a gate electrode is formed in the region. An AlGaN/GaN-HEMT or MIS type of AlGaN/GaN-HEMT has lower contact resistance and uniform device characteristics.
摘要翻译：半导体本体在衬底上包括一叠缓冲层，覆盖缓冲层的UID-GaN层和覆盖在UID-GaN层上的UID-AlGaN层。在UID-AlGaN层的表面上，淀积并图案化绝缘膜。在不蚀刻半导体本体的表面的情况下，使用图案化的绝缘膜作为掩模，在半导体本体的除了绝缘膜之外的区域的区域上选择性地重新生长n + SUP / GaN。限定与欧姆接触电极保留的区域对应的部分选择性再生长的n + S + GaN层，并且在该区域上形成欧姆接触电极。在绝缘SiO 2层内限定并形成露出用于栅电极的区域的开口，并且在该区域中形成栅电极。 AlGaN / GaN-HEMT或MIS型AlGaN / GaN-HEMT具有较低的接触电阻和均匀的器件特性。

6. 发明申请

US20050054127A1 Method of manufacturing nitride semiconductor device including SiC substrate and apparatus for manufacturing nitride semiconductor device 失效
标题翻译：包括SiC衬底的氮化物半导体器件的制造方法以及氮化物半导体器件的制造装置
公开(公告)号：US20050054127A1
公开(公告)日：2005-03-10
申请号：US10932028
申请日：2004-09-02
申请人： Fumihiko Toda
发明人： Fumihiko Toda
IPC分类号： G01N21/88 , H01L21/66 , H01L33/32 , H01L33/34 , H01S5/00
CPC分类号： H01L22/22 , H01L2924/0002 , H01L2924/00
摘要： Excitation light is irradiated onto a GaN layer on a silicon carbide substrate constituting a layered product that is set on a stage. Then light is emitted from a defective part caused by a structural defect of the silicon carbide substrate out of the GaN layer. By using this light luminescence phenomena, a position of a defective part of the silicon carbide substrate can be detected.
摘要翻译：激发光照射在构成设置在舞台上的层叠体的碳化硅衬底上的GaN层上。然后，由GaN层的碳化硅衬底的结构缺陷引起的缺陷部分发光。通过使用该发光现象，可以检测碳化硅衬底的缺陷部分的位置。

7. 发明授权

US07763910B2 Semiconductor device and manufacturing method 有权
标题翻译：半导体器件及制造方法
公开(公告)号：US07763910B2
公开(公告)日：2010-07-27
申请号：US12382664
申请日：2009-03-20
申请人： Toshiharu Marui , Fumihiko Toda , Shinichi Hoshi
发明人： Toshiharu Marui , Fumihiko Toda , Shinichi Hoshi
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/402 , H01L29/42316 , H01L29/66462
摘要： A semiconductor device has source and drain electrodes formed on a substrate, a gate insulation film formed on the substrate between the source and drain electrodes, and a gate electrode formed on the gate insulation film. These elements are all covered by a dielectric sub-insulation film. An opening is formed in the sub-insulation film, partially exposing the gate electrode. A field plate extends from the top of the gate electrode down one side of the gate electrode as far as the sub-insulation film covering the gate insulation film, filling the opening. The thickness of the sub-insulation film can be selected to optimize the separation between the field plate and the substrate for the purpose of reducing current collapse by reducing electric field concentration at the edge of the gate electrode.
摘要翻译：半导体器件具有形成在基板上的源极和漏极，在源极和漏极之间的基板上形成的栅极绝缘膜，以及形成在栅极绝缘膜上的栅电极。这些元件都被绝缘子绝缘膜覆盖。在副绝缘膜中形成开口，部分地露出栅电极。场板从栅电极的顶部向下延伸到栅电极的一侧，直到覆盖栅绝缘膜的次绝缘膜填充开口。可以选择次级绝缘膜的厚度以优化场板和衬底之间的分离，以便通过降低栅电极边缘处的电场浓度来减少电流崩塌。

8. 发明申请

US20090242937A1 Semiconductor device and manufacturing method 有权
标题翻译：半导体器件及制造方法
公开(公告)号：US20090242937A1
公开(公告)日：2009-10-01
申请号：US12382664
申请日：2009-03-20
申请人： Toshiharu Marui , Fumihiko Toda , Shinichi Hoshi
发明人： Toshiharu Marui , Fumihiko Toda , Shinichi Hoshi
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/7786 , H01L29/402 , H01L29/42316 , H01L29/66462
摘要： A semiconductor device has source and drain electrodes formed on a substrate, a gate insulation film formed on the substrate between the source and drain electrodes, and a gate electrode formed on the gate insulation film. These elements are all covered by a dielectric sub-insulation film. An opening is formed in the sub-insulation film, partially exposing the gate electrode. A field plate extends from the top of the gate electrode down one side of the gate electrode as far as the sub-insulation film covering the gate insulation film, filling the opening. The thickness of the sub-insulation film can be selected to optimize the separation between the field plate and the substrate for the purpose of reducing current collapse by reducing electric field concentration at the edge of the gate electrode.
摘要翻译：半导体器件具有形成在基板上的源极和漏极，在源极和漏极之间的基板上形成的栅极绝缘膜，以及形成在栅极绝缘膜上的栅电极。这些元件都被绝缘子绝缘膜覆盖。在副绝缘膜中形成开口，部分地露出栅电极。场板从栅电极的顶部向下延伸到栅电极的一侧，直到覆盖栅绝缘膜的次绝缘膜填充开口。可以选择次级绝缘膜的厚度以优化场板和衬底之间的分离，以便通过降低栅电极边缘处的电场浓度来减少电流崩塌。

9. 发明申请

US20080206906A1 Method of manufacturing nitride semiconductor device including SiC substrate and apparatus for manufacturing nitride semiconductor device 审中-公开
公开(公告)号：US20080206906A1
公开(公告)日：2008-08-28
申请号：US12076848
申请日：2008-03-24
申请人： Fumihiko Toda
发明人： Fumihiko Toda
IPC分类号： H01L21/66
CPC分类号： H01L22/22 , H01L2924/0002 , H01L2924/00
摘要： Excitation light is irradiated onto a GaN layer on a silicon carbide substrate constituting a layered product that is set on a stage. Then light is emitted from a defective part caused by a structural defect of the silicon carbide substrate out of the GaN layer. By using this light luminescence phenomena, a position of a defective part of the silicon carbide substrate can be detected.

10. 发明授权

US08330950B2 Method of manufacturing nitride semiconductor device including SiC substrate and apparatus for manufacturing nitride semiconductor device 有权
标题翻译：包括SiC衬底的氮化物半导体器件的制造方法以及氮化物半导体器件的制造装置
公开(公告)号：US08330950B2
公开(公告)日：2012-12-11
申请号：US12076837
申请日：2008-03-24
申请人： Fumihiko Toda
发明人： Fumihiko Toda
IPC分类号： G01N21/00 , H01L21/60
CPC分类号： H01L22/22 , H01L2924/0002 , H01L2924/00
摘要： Excitation light is irradiated onto a GaN layer on a silicon carbide substrate constituting a layered product that is set on a stage. Then light is emitted from a defective part caused by a structural defect of the silicon carbide substrate out of the GaN layer. By using this light luminescence phenomena, a position of a defective part of the silicon carbide substrate can be detected.
摘要翻译：激发光照射在构成设置在舞台上的层叠体的碳化硅衬底上的GaN层上。然后，由GaN层的碳化硅衬底的结构缺陷引起的缺陷部分发光。通过使用该发光现象，可以检测碳化硅衬底的缺陷部分的位置。

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