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1. 发明授权

US06169693A Self-convergence of post-erase threshold voltages in a flash memory cell using transient response 有权
标题翻译：使用瞬态响应的闪存单元中擦除后阈值电压的自收敛
公开(公告)号：US06169693A
公开(公告)日：2001-01-02
申请号：US09429239
申请日：1999-10-28
申请人： I-Chuin Peter Chan , Feng Frank Qian , Hsingya Arthur Wang
发明人： I-Chuin Peter Chan , Feng Frank Qian , Hsingya Arthur Wang
IPC分类号： G11C1604
CPC分类号： G11C16/3409 , G11C16/14 , G11C16/3404
摘要： An erase method provides for self-converging erase on a flash memory cell by rapidly switching a bias on a control gate while a lateral field is present in a channel region. Preferably, the lateral field is provided by differentially biasing the source and drain of the cell and the change in bias of the control gate is sufficiently fast to induce a transient response at the floating gate. The net transient vertical field formed across a tunneling oxide between the channel region and the floating gate causes moderate hot carrier injection between the channel region and the floating gate. This method is self-converging, since carrier injection to the floating gate will not happen unless a sufficient number of carriers are removed from the floating gate during the array step. Since the bulk of the self-converging effect occurs as the control gate voltage is transitioning and shortly thereafter, very little time is needed at the end of an erase pulse to effect this response.
摘要翻译：擦除方法通过在沟道区域中存在横向场的情况下快速切换控制栅极上的偏置来在快闪存储器单元上提供自会聚擦除。优选地，通过对电池的源极和漏极进行差分偏置来提供横向场，并且控制栅极的偏置变化足够快以在浮动栅极处引起瞬态响应。在通道区域和浮置栅极之间穿过隧穿氧化物的跨瞬时垂直场引起在通道区域和浮动栅极之间引起适度的热载流子注入。这种方法是自会聚的，因为除非在阵列步骤期间从浮置栅极去除足够数量的载流子，否则不会发生对浮栅的载流子注入。由于自会聚效应的大部分是随着控制栅极电压的转变而在其后不久发生的，所以在擦除脉冲结束时需要很少的时间来实现该响应。

2. 发明授权

US6026026A Self-convergence of post-erase threshold voltages in a flash memory cell using transient response 失效
标题翻译：使用瞬态响应的闪存单元中擦除后阈值电压的自收敛
公开(公告)号：US6026026A
公开(公告)日：2000-02-15
申请号：US985833
申请日：1997-12-05
申请人： I-Chuin Peter Chan , Feng Frank Qian , Hsingya Arthur Wang
发明人： I-Chuin Peter Chan , Feng Frank Qian , Hsingya Arthur Wang
IPC分类号： G11C16/14 , G11C16/34 , G11C16/04
CPC分类号： G11C16/3409 , G11C16/14 , G11C16/3404
摘要： An erase method provides for self-converging erase on a flash memory cell by rapidly switching a bias on a control gate while a lateral field is present in a channel region. Preferably, the lateral field is provided by differentially biasing the source and drain of the cell and the change in bias of the control gate is sufficiently fast to induce a transient response at the floating gate. The net transient vertical field formed across a tunneling oxide between the channel region and the floating gate causes moderate hot carrier injection between the channel region and the floating gate. This method is self-converging, since carrier injection to the floating gate will not happen unless a sufficient number of carriers are removed from the floating gate during the array step. Since the bulk of the self-converging effect occurs as the control gate voltage is transitioning and shortly thereafter, very little time is needed at the end of an erase pulse to effect this response.
摘要翻译：擦除方法通过在沟道区域中存在横向场的情况下快速切换控制栅极上的偏置来在快闪存储器单元上提供自会聚擦除。优选地，通过对电池的源极和漏极进行差分偏置来提供横向场，并且控制栅极的偏置变化足够快以在浮动栅极处引起瞬态响应。在通道区域和浮置栅极之间穿过隧穿氧化物的跨瞬时垂直场引起在通道区域和浮动栅极之间引起适度的热载流子注入。这种方法是自会聚的，因为除非在阵列步骤期间从浮置栅极去除足够数量的载流子，否则不会发生对浮栅的载流子注入。由于自会聚效应的大部分是随着控制栅极电压的转变而在其后不久发生的，所以在擦除脉冲结束时需要很少的时间来实现该响应。

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