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1. 发明申请

US20070138507A1 Method of fabricating reduced subthreshold leakage current submicron NFET's with high III/V ratio material 审中-公开
标题翻译：制造具有高III / V比材料的亚阈值漏电流亚微米NFET的方法
公开(公告)号：US20070138507A1
公开(公告)日：2007-06-21
申请号：US11303776
申请日：2005-12-16
申请人： Elizabeth Glass , Olin Hartin , Haldane Henry , Philippe Jamet , Lisa Zhang , Michael Pelczynski
发明人： Elizabeth Glass , Olin Hartin , Haldane Henry , Philippe Jamet , Lisa Zhang , Michael Pelczynski
IPC分类号： H01L29/739
CPC分类号： H01L29/7784
摘要： A method of fabricating an enhancement mode semiconductor device comprises providing a compound semiconductor substrate, epitaxially growing on the substrate a first portion of a buffer, the first portion including gallium arsenide (GaAs), growing a second portion of the buffer, the second portion including a high V/III ratio and high aluminum (Al) mole fraction aluminum gallium arsenide (AlGaAs), and epitaxially growing a stack of compound semiconductor layers on the buffer. An enhancement mode semiconductor device is then formed in the stack.
摘要翻译：一种制造增强型半导体器件的方法包括提供化合物半导体衬底，在衬底上外延生长缓冲器的第一部分，第一部分包括砷化镓（GaAs），生长缓冲器的第二部分，第二部分包括高V / III比和高铝（Al）摩尔分数的砷化镓铝（AlGaAs），并且在缓冲器上外延生长一叠化合物半导体层。然后在堆叠中形成增强型半导体器件。

2. 发明申请

US20060217078A1 Enhancement mode transceiver and switched gain amplifier integrated circuit 有权
标题翻译：增强型收发器和开关增益放大器集成电路
公开(公告)号：US20060217078A1
公开(公告)日：2006-09-28
申请号：US11092070
申请日：2005-03-28
申请人： Elizabeth Glass , Olin Hartin , Ngai Lau , Neil Tracht
发明人： Elizabeth Glass , Olin Hartin , Ngai Lau , Neil Tracht
IPC分类号： H04B1/44 , H04B1/28
CPC分类号： H03G1/0088
摘要： Methods and apparatus are provided for RF switches (504, 612) integrated in a monolithic RF transceiver IC (500) and switched gain amplifier (600). Multi-gate n-channel enhancement mode FETs (50, 112, 114, Q1-3, Q4-6) are used with single gate FETs (150), resistors (Rb, Rg, Re, R1-R17) and capacitors (C1-C3) formed by the same manufacturing process. The multiple gates (68) of the FETs (50, 112, 114, Q1-3, Q4-6) are parallel coupled, spaced-apart and serially arranged between source (72) and drain (76). When used in pairs (112, 114) to form a switch (504) for a transceiver (500) each FET has its source (74) coupled to an antenna RF I/O port (116, 501) and drains coupled respectively to second and third RF I/O ports (118, 120; 507, 521) leading to the receiver side (530) or transmitter side (532) of the transceiver (500). The gates (136, 138) are coupled to control ports (122, 124; 503, 505; 606, 608). When used in pairs (Q1-3, Q4-6) to form a variable switched attenuator, the first FET (Q1-3) is a pass device and the second FET (Q4-6) is a shunt device that respectively bridge two series resistors (R1, R2) and block a shunt resistor (R3) of a T-type attenuator.
摘要翻译：为集成在单片RF收发器IC（500）和开关增益放大器（600）中的RF开关（504,612）提供了方法和装置。多栅极n沟道增强型FET（50,112,114，Q 1-3，Q 4-6）与单栅极FET（150），电阻器（Rb，Rg，Re，R 1 -R 17）和通过相同制造工艺形成的电容器（C 1 -C 3）。 FET（50,112,114，Q1-3，Q4-6）的多个栅极（68）被平行耦合，间隔开并且串联地布置在源极（72）和漏极（76）之间。当成对使用（112,114）形成用于收发器（500）的开关（504）时，每个FET的源极（74）耦合到天线RF I / O端口（116,501），并且分别耦合到第二以及通向收发器（500）的接收机侧（530）或发射机侧（532）的第三RF I / O端口（118,120; 507,521）。门（136,138）被耦合到控制端口（122,124; 503,505; 606,608）。当成对使用（Q 1 - 3，Q 4 - 6）以形成可变开关衰减器时，第一FET（Q1-3）是通过器件，第二FET（Q 4 - 6）是分流器件，分别桥接两个串联电阻（R 1，R 2）并阻塞T型衰减器的分流电阻（R 3）。

3. 发明授权

US08359671B1 Pairing and indexing system for a garment pair 有权
标题翻译：配对和索引系统的服装对
公开(公告)号：US08359671B1
公开(公告)日：2013-01-29
申请号：US12803500
申请日：2010-06-29
申请人： Elizabeth Glass , Richard L. Miller
发明人： Elizabeth Glass , Richard L. Miller
IPC分类号： A43B17/00 , A44B17/00
CPC分类号： A44B11/005 , D06F95/008
摘要： A pairing and indexing system for a garment pair. The pairing and indexing system includes a garment pair and a fastener. The garment pair has at least one characteristic. The fastener is attached to the garment pair, replaceably attaches the garment pair to each other for pairing so as to prevent loss of either of the garment pair due to separation from one another, an inconsistent pairing of the garment pair of a similar type, etc., and has at least one attribute. Each of the at least one attribute of the fastener has a predetermined correlation to a respective one of the at least one characteristic of the garment pair.
摘要翻译：用于服装对的配对和分度系统。配对和分度系统包括服装对和紧固件。服装对具有至少一个特征。紧固件附接到衣服对，可替换地将衣物对彼此连接以配对，以防止由于彼此分离而导致的任何一对服装对的损失，类似类型的服装对的不一致配对等，并具有至少一个属性。紧固件的至少一个属性中的每一个与服装对的至少一个特征中的相应一个具有预定的相关性。

4. 发明申请

US20060257846A1 Method of assaying for high performance mammals 审中-公开
标题翻译：测定高性能哺乳动物的方法
公开(公告)号：US20060257846A1
公开(公告)日：2006-11-16
申请号：US10545720
申请日：2004-02-16
申请人： Stephen Bishop , Elizabeth Glass
发明人： Stephen Bishop , Elizabeth Glass
IPC分类号： C12Q1/00 , G01N33/567
CPC分类号： G01N33/5091
摘要： A method of assaying for animals having a high innate immunity level by assessing the total white blood cell count of the mammal or at least one of the mammal's parents and/or the acute phase protein level of the mammal or at least one of its parents. Alternatively, genetic markers indicative of these values may be used. The values obtained are compared to equivalent measurements from other mammals of the same breed. Values higher than mean equivalent measurements from mammals of the same breed indicate a high innate immunity level which is associated with a high performance.
摘要翻译：一种通过评估哺乳动物或哺乳动物的亲本中的至少一种和/或哺乳动物或其至少一种亲本的急性期蛋白质水平的总白细胞计数来测定具有高先天免疫水平的动物的方法。或者，可以使用指示这些值的遗传标记。将获得的值与来自相同品种的其他哺乳动物的等效测量值进行比较。高于相同品种的哺乳动物的平均等效测量值高表示与高性能有关的高先天免疫水平。

5. 发明申请

US20060214238A1 Multi-gate enhancement mode RF switch and bias arrangement 有权
标题翻译：多栅极增强模式RF开关和偏置布置
公开(公告)号：US20060214238A1
公开(公告)日：2006-09-28
申请号：US11092264
申请日：2005-03-28
申请人： Elizabeth Glass , Olin Hartin , Neil Tracht
发明人： Elizabeth Glass , Olin Hartin , Neil Tracht
IPC分类号： H01L29/76
CPC分类号： H01L27/0605 , H01L23/4824 , H01L29/42316 , H01L29/7786 , H01L2924/0002 , H01L2924/3011 , H04B1/48 , H01L2924/00
摘要： Methods and apparatus are provided for RF switches (100, 200). In a preferred embodiment, the apparatus comprises one or more multi-gate n-channel enhancement mode FET transistors (50, 112, 114). When used in pairs (112, 114) each has its source (74, 133) coupled to a first common RF I/O port (116) and drains coupled respectively to second and third RF I/O ports (118, 120), and gates (136, 138), coupled respectively to first and second control terminals (122, 124). The multi-gate regions (66, 68) of the FETs (50) are parallel coupled, spaced-apart and serially arranged between source (72) and drain (76). Lightly doped n-regions (Ldd, Lds) are provided serially arranged between the spaced-apart multi-gate regions (66, 68), the lightly doped n-regions (Ldd, Lds) being separated by more heavily doped n-regions (84). Bias resistances (132, 134) are provided between the sources (72, 133) and control terminals (122, 124) so as to provide a DC path between the control terminals (122, 124) that maintains the source (72, 133) voltage at the proper bias potential for enhancement mode operation.
摘要翻译：提供了用于RF开关（100,200）的方法和装置。在优选实施例中，该装置包括一个或多个多栅极n沟道增强型FET晶体管（50,112,114）。当成对使用时，每个都具有耦合到第一公共RF I / O端口（116）的源极（74,133）和分别耦合到第二和第三RF I / O端口（118,120）的漏极，和分别耦合到第一和第二控制端（122,124）的门（136,138）。 FET（50）的多栅极区域（66,68）平行耦合，间隔开并且串联地布置在源极（72）和漏极（76）之间。轻度掺杂的n区（Ldd，Lds）被串行地布置在间隔开的多栅极区（66,68）之间，轻掺杂的n-区（Ldd，Lds）被更重掺杂的n区分离（ 84）。偏置电阻（132,134）设置在源极（72,133）和控制端子（122,124）之间，以便在维持源极（72,133）和控制端子（122,124）之间提供DC路径，电压处于适当的偏置电位，用于增强模式操作。

6. 发明授权

US06589089B1 Self-righting flotation seat for an infant 失效
标题翻译：婴儿自立浮选座椅
公开(公告)号：US06589089B1
公开(公告)日：2003-07-08
申请号：US10038369
申请日：2001-10-19
申请人： Elizabeth Glass , James Mandato
发明人： Elizabeth Glass , James Mandato
IPC分类号： B63C908
CPC分类号： A47D13/02 , A47C15/006 , B63B13/00 , B63B35/74 , B63B43/04 , B63C9/30 , B63C2009/023
摘要： A self-righting floatation seat for an infant that includes a body holding the infant and a harness detachably attached to the body. The body includes a lower portion receiving the infant, a handle extending upwardly from the lower portion, and a canopy detachably attached to the handle and the lower portion by a pair of quick disconnect clips and shields the head of the infant. The lower portion has an inner floor so configured so as to allow the infant to be in a reclining position, is separated from the lower portion by floatation foam, and has a plurality of perches extending upwardly therefrom to which the harness is attached. The lower portion has a pair drain holes in which a pair of check valves are disposed. The harness is a five-point harness including a pair of shoulder straps, a crotch strap, and a pair of waist straps.
摘要翻译：用于婴儿的自调整漂浮座，其包括容纳婴儿的身体和可拆卸地附接到身体的线束。主体包括接收婴儿的下部，从下部向上延伸的手柄，以及通过一对快速断开夹可拆卸地附接到手柄和下部的罩，并且遮盖婴儿的头部。下部具有内底，其被配置为允许婴儿处于倾斜位置，通过漂浮泡沫与下部分离，并且具有从其向上延伸的多个凹槽，线束附接到该凹槽。下部具有配置有一对止回阀的排水孔对。线束是一个五点式线束，包括一对肩带，裆带和一对腰带。

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