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1. 发明申请

US20070064478A1 Nanotube- and nanocrystal-based non-volatile memory 有权
公开(公告)号：US20070064478A1
公开(公告)日：2007-03-22
申请号：US11599643
申请日：2006-11-14
申请人： Yuegang Zhang , Udayan Ganguly , Edwin Kan
发明人： Yuegang Zhang , Udayan Ganguly , Edwin Kan
IPC分类号： G11C16/04
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5671 , G11C2213/17 , H01L21/28273 , H01L29/1606 , H01L29/42332 , H01L29/66825 , H01L29/7781 , H01L29/7883 , H01L29/7885 , H01L51/0048 , H01L51/0512 , H01L51/0566
摘要： An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.

2. 发明申请

US20070014151A1 Nanotube-and nanocrystal-based non-volatile memory 有权
标题翻译：纳米管和纳米晶体非挥发性记忆
公开(公告)号：US20070014151A1
公开(公告)日：2007-01-18
申请号：US11174128
申请日：2005-06-30
申请人： Yuegang Zhang , Udayan Ganguly , Edwin Kan
发明人： Yuegang Zhang , Udayan Ganguly , Edwin Kan
IPC分类号： G11C16/04 , G11C11/34
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5671 , G11C2213/17 , H01L21/28273 , H01L29/1606 , H01L29/42332 , H01L29/66825 , H01L29/7781 , H01L29/7883 , H01L29/7885 , H01L51/0048 , H01L51/0512 , H01L51/0566
摘要： An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.
摘要翻译：一个实施例是组合纳米晶体和纳米管范式位移的非易失性存储器的晶体管。特别地，一个实施例是利用碳纳米管通道区域和纳米晶体电荷存储区域的基于晶体管的非易失性存储元件。这种组合使得能够组合低功率，低读和写电压，高电荷保持和高位密度。一个实施例还表现出大的存储窗口和单电子漏极电流。

3. 发明授权

US07053439B2 Chemoreceptive semiconductor structure 有权
标题翻译：化学接受半导体结构
公开(公告)号：US07053439B2
公开(公告)日：2006-05-30
申请号：US10695432
申请日：2003-10-28
申请人： Edwin Kan , Bradley A. Minch
发明人： Edwin Kan , Bradley A. Minch
IPC分类号： H01L29/788
CPC分类号： G01N27/414 , G01N27/4145
摘要： A field effect transistor has a floating gate with an extended portion. A selectively chemoreceptive finger or layer is electrostatically coupled to the extended portion of the floating gate, and induces a voltage on the gate in response to selected chemicals or other conditions affecting the finger. The voltage on the gate modulates current flowing between a source and a drain of the transistor, effectively sensing the presence of the selected chemicals or conditions. In one embodiment, multiple chemoreceptive fingers are electrostatically coupled to the extended portion of the floating gate. In a further embodiment, an array of such field effect transistors provide a sensor for multiple conditions.
摘要翻译：场效应晶体管具有具有延伸部分的浮动栅极。选择性化学感应手指或层被静电耦合到浮动栅极的延伸部分，并响应于选定的化学物质或影响手指的其它条件而在栅极上感应电压。栅极上的电压调制在晶体管的源极和漏极之间流动的电流，有效地感测选定的化学物质或条件的存在。在一个实施例中，多个化学感应指状物静电耦合到浮动栅极的延伸部分。在另一实施例中，这种场效应晶体管的阵列为多个条件提供传感器。

4. 发明授权

US07629639B2 Nanotube- and nanocrystal-based non-volatile memory 有权
标题翻译：基于纳米管和纳米晶体的非挥发性记忆
公开(公告)号：US07629639B2
公开(公告)日：2009-12-08
申请号：US11599643
申请日：2006-11-14
申请人： Yuegang Zhang , Udayan Ganguly , Edwin Kan
发明人： Yuegang Zhang , Udayan Ganguly , Edwin Kan
IPC分类号： H01L27/108
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5671 , G11C2213/17 , H01L21/28273 , H01L29/1606 , H01L29/42332 , H01L29/66825 , H01L29/7781 , H01L29/7883 , H01L29/7885 , H01L51/0048 , H01L51/0512 , H01L51/0566
摘要： An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.
摘要翻译：一个实施例是组合纳米晶体和纳米管范式位移的非易失性存储器的晶体管。特别地，一个实施例是利用碳纳米管通道区域和纳米晶体电荷存储区域的基于晶体管的非易失性存储元件。这种组合使得能够组合低功率，低读和写电压，高电荷保持和高位密度。一个实施例还表现出大的存储窗口和单电子漏极电流。

5. 发明申请

US20080094074A1 TRANSISTOR WITH FLOATING GATE AND ELECTRET 有权
标题翻译：具有浮动门和电极的晶体管
公开(公告)号：US20080094074A1
公开(公告)日：2008-04-24
申请号：US11862867
申请日：2007-09-27
申请人： Myongseob Kim , Nick Shen , Chungho Lee , Edwin Kan
发明人： Myongseob Kim , Nick Shen , Chungho Lee , Edwin Kan
IPC分类号： G01R27/26 , H01L29/788
CPC分类号： H01L29/7885 , G01N27/414 , H01L29/66825
摘要： A sensor includes a field effect transistor having a source, drain, a control gate and floating gate, wherein the floating gate has an extended portion extending away from the control gate. A sensing gate is capacitively coupled to the extended portion of the floating gate. A polymer electret sensing coating is electrically coupled to the sensing gate.
摘要翻译：传感器包括具有源极，漏极，控制栅极和浮置栅极的场效应晶体管，其中浮置栅极具有远离控制栅极延伸的延伸部分。感测门电容耦合到浮动栅极的延伸部分。聚合物驻极体感测涂层电耦合到感测门。

6. 发明申请

US20050212627A1 Permalloy loaded transmission lines for high-speed interconnect applications 有权
标题翻译：坡莫合金加载传输线用于高速互连应用
公开(公告)号：US20050212627A1
公开(公告)日：2005-09-29
申请号：US11018924
申请日：2004-12-22
申请人： Pingshan Wang , Edwin Kan
发明人： Pingshan Wang , Edwin Kan
IPC分类号： H01P3/08
CPC分类号： H01P3/08
摘要： To facilitate high frequency operation, transmission lines for high-speed interconnect applications in CMOS technologies are loaded with patterned permalloy or other ferromagnetic material films. Patterning the permalloy films as a plurality of segments results in control of the domain structures in the permalloy segments such that ferromagnetic resonance (FMR) effects are eliminated and eddy-current effects are reduced, thereby allowing operation of the transmission lines at frequencies of 20 GHz or higher. In addition, the patterned permalloy reduces the magnetic field coupling between two adjacent transmission lines. A novel ferromagnetic thin film characterization method is also employed to measure the microwave permeability of the patterned permalloy films and verify their high frequency operational characteristics.
摘要翻译：为了便于高频操作，CMOS技术中用于高速互连应用的传输线被加载有图案化的坡莫合金或其它铁磁材料膜。将坡莫合金膜图案化为多个段导致对坡莫合金段中的畴结构的控制，使得铁磁共振（FMR）效应被消除并且涡流效应被降低，从而允许在20GHz的频率下运行传输线或更高。此外，图案化的坡莫合金减少了两个相邻传输线之间的磁场耦合。还采用新型的铁磁薄膜表征方法来测量图案化坡莫合金薄膜的微波渗透性，并验证其高频操作特性。

7. 发明授权

US07262991B2 Nanotube- and nanocrystal-based non-volatile memory 有权
标题翻译：基于纳米管和纳米晶体的非挥发性记忆
公开(公告)号：US07262991B2
公开(公告)日：2007-08-28
申请号：US11174128
申请日：2005-06-30
申请人： Yuegang Zhang , Udayan Ganguly , Edwin Kan
发明人： Yuegang Zhang , Udayan Ganguly , Edwin Kan
IPC分类号： G11C11/34
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5671 , G11C2213/17 , H01L21/28273 , H01L29/1606 , H01L29/42332 , H01L29/66825 , H01L29/7781 , H01L29/7883 , H01L29/7885 , H01L51/0048 , H01L51/0512 , H01L51/0566
摘要： An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.
摘要翻译：一个实施例是组合纳米晶体和纳米管范式位移的非易失性存储器的晶体管。特别地，一个实施例是利用碳纳米管通道区域和纳米晶体电荷存储区域的基于晶体管的非易失性存储元件。这种组合使得能够组合低功率，低读和写电压，高电荷保持和高位密度。一个实施例还表现出大的存储窗口和单电子漏极电流。

8. 发明申请

US20060038222A1 Chemoreceptive semiconductor structure 审中-公开
公开(公告)号：US20060038222A1
公开(公告)日：2006-02-23
申请号：US11247035
申请日：2005-10-11
申请人： Edwin Kan , Bradley Minch
发明人： Edwin Kan , Bradley Minch
IPC分类号： H01L29/788
CPC分类号： G01N27/414 , G01N27/4145
摘要： A field effect transistor has a floating gate with an extended portion. A selectively chemoreceptive finger or layer is electrostatically coupled to the extended portion of the floating gate, and induces a voltage on the gate in response to selected chemicals or other conditions affecting the finger. The voltage on the gate modulates current flowing between a source and a drain of the transistor, effectively sensing the presence of the selected chemicals or conditions. In one embodiment, multiple chemoreceptive fingers are electrostatically coupled to the extended portion of the floating gate. In a further embodiment, an array of such field effect transistors provide a sensor for multiple conditions.

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