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1. 发明授权

US08772077B2 Method of forming chalcogenide thin film 有权
标题翻译：形成硫族化物薄膜的方法
公开(公告)号：US08772077B2
公开(公告)日：2014-07-08
申请号：US12936563
申请日：2009-04-16
申请人： Ki-Hoon Lee , Jung-Wook Lee , Dong-Ho You
发明人： Ki-Hoon Lee , Jung-Wook Lee , Dong-Ho You
IPC分类号： H01L21/00
CPC分类号： C23C16/305 , C23C16/042 , C23C16/45527
摘要： The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate. At least one operation, namely changing the supply time of the first purge gas and/or adjusting the internal pressure of the reactor is performed in such a way as to ensure that the deposition rate at an inner portion of the pattern is greater than the deposition rate at an upper portion of the pattern. According to the present invention, it is possible to form a chalcogenide thin film having an excellent gap-fill property by changing the purge time of the source gas or adjusting the internal pressure of the reactor in such a way as to ensure that the film forming rate at the inner portion of the pattern is greater than the film forming rate at the upper portion of the pattern.
摘要翻译：本发明涉及一种形成用于相变存储器的硫族化物薄膜的方法。在根据本发明的形成硫族化物薄膜的方法中，将形成有图案的基板装载到反应器中，并将源气体供应到基板上。这里，源气体包括选自锗（Ge）源气体，镓（Ga）源气体，铟（In）源气体，硒（Se）源气体，锑（Sb）源气体，碲（ Te）源气体，锡（Sn）源气体，银（Ag）源气体和硫（S）源气体。为了清洗供给到基板上的源气体，将第一吹扫气体供给到基板上，然后将用于还原原料气体的反应气体供给到基板上，向基板供给第二吹扫气体以便吹扫供给到基板上的反应气体。执行至少一种操作，即改变第一吹扫气体的供应时间和/或调节反应器的内部压力，以确保图案内部的沉积速率大于沉积物的沉积速率速率在图案的上部。根据本发明，可以通过改变源气体的吹扫时间或调节反应器的内部压力来形成具有优异间隙填充性质的硫族化物薄膜，以确保成膜在图案的内部的速率大于图案上部的成膜速率。

2. 发明申请

US20110027976A1 METHOD OF FORMING CHALCOGENIDE THIN FILM 有权
标题翻译：形成聚乙烯薄膜的方法
公开(公告)号：US20110027976A1
公开(公告)日：2011-02-03
申请号：US12936563
申请日：2009-04-16
申请人： Ki-Hoon Lee , Jung-Wook Lee , Dong-Ho You
发明人： Ki-Hoon Lee , Jung-Wook Lee , Dong-Ho You
IPC分类号： H01L21/20
CPC分类号： C23C16/305 , C23C16/042 , C23C16/45527
摘要： The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate. At least one operation, namely changing the supply time of the first purge gas and/or adjusting the internal pressure of the reactor is performed in such a way as to ensure that the deposition rate at an inner portion of the pattern is greater than the deposition rate at an upper portion of the pattern. According to the present invention, it is possible to form a chalcogenide thin film having an excellent gap-fill property by changing the purge time of the source gas or adjusting the internal pressure of the reactor in such a way as to ensure that the film forming rate at the inner portion of the pattern is greater than the film forming rate at the upper portion of the pattern.
摘要翻译：本发明涉及一种形成用于相变存储器的硫族化物薄膜的方法。在根据本发明的形成硫族化物薄膜的方法中，将形成有图案的基板装载到反应器中，并将源气体供应到基板上。这里，源气体包括选自锗（Ge）源气体，镓（Ga）源气体，铟（In）源气体，硒（Se）源气体，锑（Sb）源气体，碲（ Te）源气体，锡（Sn）源气体，银（Ag）源气体和硫（S）源气体。为了清洗供给到基板上的源气体，将第一吹扫气体供给到基板上，然后将用于还原原料气体的反应气体供给到基板上，向基板供给第二吹扫气体以便吹扫供给到基板上的反应气体。执行至少一种操作，即改变第一吹扫气体的供应时间和/或调节反应器的内部压力，以确保图案内部的沉积速率大于沉积物的沉积速率速率在图案的上部。根据本发明，可以通过改变源气体的吹扫时间或调节反应器的内部压力来形成具有优异间隙填充性质的硫族化物薄膜，以确保成膜在图案的内部的速率大于图案上部的成膜速率。

3. 发明申请

US20090090384A1 CLEANING METHOD OF APPARATUS FOR DEPOSITING METAL CONTAINING FILM 审中-公开
标题翻译：用于沉积含金属膜的装置的清洁方法
公开(公告)号：US20090090384A1
公开(公告)日：2009-04-09
申请号：US12301051
申请日：2007-01-22
申请人： Dong-Ho You , Ki-Hoon Lee , Yu-Min Jung
发明人： Dong-Ho You , Ki-Hoon Lee , Yu-Min Jung
IPC分类号： C25F3/12
CPC分类号： C23C16/4405
摘要： Provided is a cleaning method of an apparatus for depositing a metal containing film using a metal organic (MO) source. A fluorine (F)-containing gas and a carbon (C)-eliminating gas are supplied to a reactor of the apparatus so that in-situ cleaning can be performed. A solid by-product is not generated in the method, and after a predetermined quantity of wafers is processed, in-situ cleaning can be performed without exposing the reactor to the air such that productivity of the apparatus is maximized.
摘要翻译：提供一种使用金属有机（MO）源沉积含金属膜的设备的清洁方法。将含氟（F）的气体和碳（C） - 还原气体供给到设备的反应器中，从而可以进行原位清洗。在该方法中不产生固体副产物，并且在处理了预定量的晶片之后，可以进行原位清洁而不将反应器暴露在空气中，使得装置的生产率最大化。

4. 发明申请

US20070154638A1 CHEMICAL VAPOR DEPOSITION METHOD 审中-公开
标题翻译：化学气相沉积法
公开(公告)号：US20070154638A1
公开(公告)日：2007-07-05
申请号：US11617084
申请日：2006-12-28
申请人： Dong Ho You
发明人： Dong Ho You
IPC分类号： C23C16/00
CPC分类号： C23C16/4412 , C23C16/45557
摘要： Disclosed is a chemical vapor deposition method capable of raising the pressure in a chamber to a base pressure without generating particles, before a main process forming an insulation layer on a substrate. The method comprises the steps of: (1) stabilizing a chamber in which a substrate is loaded on a heater by introducing a gas into the chamber; (2) increasing the pressure in the chamber to a base pressure by gradually closing a throttle valve; (3) stabilizing the base pressure in the chamber; and (4) forming an insulation film on the substrate by injecting a film forming gas into the chamber.
摘要翻译：公开了一种化学气相沉积方法，其能够在基板上形成绝缘层的主工艺之前将室中的压力提高到基本压力而不产生颗粒。该方法包括以下步骤：（1）通过将气体引入到室中来稳定其中衬底被加载在加热器上的腔室; （2）通过逐渐关闭节流阀将室内的压力增加到基础压力; （3）稳定室内的基础压力; 以及（4）通过将成膜气体注入到所述室中在所述基板上形成绝缘膜。

5. 发明申请

US20110114114A1 CLEANING METHOD OF APPARATUS FOR DEPOSITING CARBON CONTAINING FILM 审中-公开
标题翻译：用于沉积含有碳膜的装置的清洁方法
公开(公告)号：US20110114114A1
公开(公告)日：2011-05-19
申请号：US13054072
申请日：2008-07-14
申请人： Dong-Ho You , Jung-Work Lee
发明人： Dong-Ho You , Jung-Work Lee
IPC分类号： B08B7/00
CPC分类号： C23C16/4405 , C23C16/4404
摘要： A dry cleaning method of an apparatus for depositing a carbon-containing film is provided. The method includes in-situ cleaning an inside of a reactor of the apparatus, wherein the cleaning of the inside of the reactor of the apparatus comprises supplying a cleaning gas including halogens with being activated by using a remote plasma generator to the reactor and simultaneously supplying a carbon-removing gas without being activated to the reactor. In the method, a by-product in a solid form is not generated, and in-situ cleaning can be performed without stopping the apparatus for depositing a carbon-containing film after a predetermined amount of wafers are treated, such that productivity of the apparatus for depositing a carbon-containing film can be maximized.
摘要翻译：提供了一种用于沉积含碳膜的设备的干洗方法。该方法包括原位清洁设备的反应器的内部，其中清洁设备的反应器的内部包括：通过使用远程等离子体发生器向反应器供应包括卤素的清洁气体并同时供应除去活性炭的气体。在该方法中，不产生固体形式的副产物，并且可以在预定量的晶片被处理之后不停止用于沉积含碳膜的装置的原位清洗，使得装置的生产率用于沉积含碳膜可以最大化。

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