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1. 发明授权

US08377788B2 SiGe heterojunction bipolar transistor and method of forming a SiGe heterojunction bipolar transistor 有权
标题翻译： SiGe异质结双极晶体管和形成SiGe异质结双极晶体管的方法
公开(公告)号：US08377788B2
公开(公告)日：2013-02-19
申请号：US12946305
申请日：2010-11-15
申请人： Wibo Van Noort , Jamal Ramdani , Andre Labonte , Donald Robertson Getchell
发明人： Wibo Van Noort , Jamal Ramdani , Andre Labonte , Donald Robertson Getchell
IPC分类号： H01L21/331
CPC分类号： H01L29/66242 , H01L29/0649 , H01L29/1004 , H01L29/7371
摘要： A SiGe heterojunction bipolar transistor is fabricated by etching an epitaxially-formed structure to form a mesa that has a collector region, a cap region, and a notched SiGe base region that lies in between. A protective plug is formed in the notch of the SiGe base region so that thick non-conductive regions can be formed on the sides of the collector region and the cap region. Once the non-conductive regions have been formed, the protective plug is removed. An extrinsic base is then formed to lie in the notch and touch the base region, followed by the formation of isolation regions and an emitter region.
摘要翻译：通过蚀刻外延形成的结构来形成SiGe异质结双极晶体管，以形成具有位于其间的集电极区域，帽区域和缺口SiGe基极区域的台面。在SiGe基极区域的凹口中形成保护塞，使得可以在集电区域和盖区域的侧面上形成厚的非导电区域。一旦形成了非导电区域，就去除了保护塞。然后形成外部碱基以位于凹口中并且接触基极区域，随后形成隔离区域和发射极区域。

2. 发明申请

US20050248435A1 Actuator with integral position sensor 有权
标题翻译：带整体位置传感器的执行机构
公开(公告)号：US20050248435A1
公开(公告)日：2005-11-10
申请号：US10917741
申请日：2004-08-13
申请人： Donald Robertson Lawrence , Steven Donald Keddie , Mike Joseph Chalovich , Yulanda Wang
发明人： Donald Robertson Lawrence , Steven Donald Keddie , Mike Joseph Chalovich , Yulanda Wang
IPC分类号： F02D11/10 , H01C10/14 , H01C10/34
CPC分类号： F02D11/10 , F02D11/106 , H01C10/34
摘要： An actuator and integral position sensor has increased reliability with a fail-safe mode. The actuator and sensor assembly includes a rotary actuator that has a driving shaft. A sensor rotor has the driving shaft mounted in a bore. A contactor is mounted to an outer edge of the rotor. The contactor is engaged with a resistor film as the rotor rotates. A driven shaft is mounted to the rotor in another bore. The rotor couples the driving shaft and the driven shaft together.
摘要翻译：致动器和整体位置传感器通过故障安全模式提高了可靠性。致动器和传感器组件包括具有驱动轴的旋转致动器。传感器转子具有安装在孔中的驱动轴。接触器安装在转子的外边缘。当转子旋转时，接触器与电阻膜接合。从动轴在另一个孔中安装到转子上。转子将驱动轴和从动轴连接在一起。

3. 发明授权

US07467909B2 Arresting systems and methods 有权
标题翻译：逮捕制度和方法
公开(公告)号：US07467909B2
公开(公告)日：2008-12-23
申请号：US11393269
申请日：2006-03-30
申请人： Richard L. Orner, Jr. , Joseph W. Lurquin, Jr. , Thomas L. Quinn , Donald Robertson , Mark W. Allen
发明人： Richard L. Orner, Jr. , Joseph W. Lurquin, Jr. , Thomas L. Quinn , Donald Robertson , Mark W. Allen
IPC分类号： E01F13/04 , E01F13/00
CPC分类号： E01F13/12 , B61L29/04 , E01F13/044 , E01F13/048 , E01F13/123
摘要： Systems and methods for arresting vehicles or other moving objects are detailed. The systems may be bi-directional, so as to arrest vehicles on either side of a barrier. They additionally may be reset for reuse relatively rapidly following deployment.
摘要翻译：详细说明了用于制动车辆或其他移动物体的系统和方法。系统可以是双向的，以便在障碍物的任一侧上停止车辆。在部署之后，它们可以被复位以便相对快速地重用。

4. 发明申请

US20060121289A1 Aqueous coating composition 有权
公开(公告)号：US20060121289A1
公开(公告)日：2006-06-08
申请号：US11338915
申请日：2006-01-25
申请人： Donald Robertson
发明人： Donald Robertson
IPC分类号： C08G18/00 , B32B27/40
CPC分类号： C08J7/047 , C08G18/0823 , C08J2321/00 , C08J2475/00 , C09D175/04 , Y10T428/31551 , Y10T428/31573 , Y10T428/31583 , Y10T428/31587 , C08L33/00 , C08L2666/14
摘要： An aqueous coating composition including a polyurethane polymer which contains carboxylic acid groups, a crosslinking agent, a wetting agent, a slip aid, and a UV stabilizing agent is provided. Coatings prepared from the aqueous coating composition are durable and have low surface friction, flexibility at low temperatures, and adhesion to low surface energy substrates. A method of preparing a substrate coated with the aqueous coating composition and an article containing the coated substrate are also provided. The aqueous coating composition is useful for providing a protective coating with a low friction surface for automotive weatherstrip.

5. 发明申请

US20120119262A1 SiGe Heterojunction Bipolar Transistor and Method of Forming a SiGe Heterojunction Bipolar Transistor 有权
标题翻译： SiGe异质结双极晶体管和形成SiGe异质结双极晶体管的方法
公开(公告)号：US20120119262A1
公开(公告)日：2012-05-17
申请号：US12946305
申请日：2010-11-15
申请人： Wibo Van Noort , Jamal Ramdani , Andre Labonte , Donald Robertson Getchell
发明人： Wibo Van Noort , Jamal Ramdani , Andre Labonte , Donald Robertson Getchell
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/66242 , H01L29/0649 , H01L29/1004 , H01L29/7371
摘要： A SiGe heterojunction bipolar transistor is fabricated by etching an epitaxially-formed structure to form a mesa that has a collector region, a cap region, and a notched SiGe base region that lies in between. A protective plug is formed in the notch of the SiGe base region so that thick non-conductive regions can be formed on the sides of the collector region and the cap region. Once the non-conductive regions have been formed, the protective plug is removed. An extrinsic base is then formed to lie in the notch and touch the base region, followed by the formation of isolation regions and an emitter region.
摘要翻译：通过蚀刻外延形成的结构来形成SiGe异质结双极晶体管，以形成具有位于其间的集电极区域，帽区域和缺口SiGe基极区域的台面。在SiGe基极区域的凹口中形成保护塞，使得可以在集电区域和盖区域的侧面上形成厚的非导电区域。一旦形成了非导电区域，就去除了保护塞。然后形成外部碱基以位于凹口中并且接触基极区域，随后形成隔离区域和发射极区域。

6. 发明申请

US20120034756A1 Method of Forming a Deep Trench Isolation Structure Using a Planarized Hard Mask 审中-公开
标题翻译：使用平面化硬掩模形成深沟槽隔离结构的方法
公开(公告)号：US20120034756A1
公开(公告)日：2012-02-09
申请号：US12851996
申请日：2010-08-06
申请人： Taehun Kwon , Akshey Sehgal , Donald Robertson Getchell , Patrick McCarthy , Rodney L. Hill , Yaojian Leng
发明人： Taehun Kwon , Akshey Sehgal , Donald Robertson Getchell , Patrick McCarthy , Rodney L. Hill , Yaojian Leng
IPC分类号： H01L21/762
CPC分类号： H01L21/76232 , H01L21/3081 , H01L21/3083
摘要： A number of deep trench openings are formed in a semiconductor wafer to have substantially equal depths and no oxide undercut by forming a number of shallow trench openings, forming a mask structure in the shallow trench openings where the mask structure has a substantially planar top surface, forming a number of mask openings in the mask structure, and etching the semiconductor wafer through the mask openings to form the deep trench openings.
摘要翻译：在半导体晶片中形成多个深沟槽开口，通过形成多个浅沟槽开口，在浅沟槽开口中形成掩模结构，其中掩模结构具有基本上平坦的顶表面，具有大致相等的深度和无氧化物底切，在掩模结构中形成多个掩模开口，并且通过掩模开口蚀刻半导体晶片以形成深沟槽开口。

7. 发明申请

US20090074508A1 ARRESTING SYSTEMS AND METHODS 审中-公开
标题翻译：收录系统和方法
公开(公告)号：US20090074508A1
公开(公告)日：2009-03-19
申请号：US12272856
申请日：2008-11-18
申请人： Richard L. Orner, JR. , Joseph W. Lurquin, JR. , Thomas L. Quinn , Donald Robertson , Mark W. Allen
发明人： Richard L. Orner, JR. , Joseph W. Lurquin, JR. , Thomas L. Quinn , Donald Robertson , Mark W. Allen
IPC分类号： E01F13/00
CPC分类号： E01F13/12 , B61L29/04 , E01F13/044 , E01F13/048 , E01F13/123
摘要： Systems and methods for arresting vehicles or other moving objects are detailed. The systems may be bi-directional, so as to arrest vehicles on either side of a barrier. They additionally may be reset for reuse relatively rapidly following deployment.
摘要翻译：详细说明了用于制动车辆或其他移动物体的系统和方法。系统可以是双向的，以便在障碍物的任一侧上停止车辆。在部署之后，它们可以被复位以便相对快速地重用。

8. 发明申请

US20070258761A1 Arresting systems and methods 有权
标题翻译：逮捕制度和方法
公开(公告)号：US20070258761A1
公开(公告)日：2007-11-08
申请号：US11393269
申请日：2006-03-30
申请人： Richard Orner , Joseph Lurquin , Thomas Quinn , Donald Robertson , Mark Allen
发明人： Richard Orner , Joseph Lurquin , Thomas Quinn , Donald Robertson , Mark Allen
IPC分类号： E01F15/00
CPC分类号： E01F13/12 , B61L29/04 , E01F13/044 , E01F13/048 , E01F13/123
摘要： Systems and methods for arresting vehicles or other moving objects are detailed. The systems may be bi-directional, so as to arrest vehicles on either side of a barrier. They additionally may be reset for reuse relatively rapidly following deployment.
摘要翻译：详细说明了用于制动车辆或其他移动物体的系统和方法。这些系统可以是双向的，以便在障碍物的任一侧上停止车辆。在部署之后，它们可以被复位以便相对快速地重用。

9. 发明申请

US20060108271A1 Magnetic separation process for trona 有权
标题翻译：天然碱磁分离法
公开(公告)号：US20060108271A1
公开(公告)日：2006-05-25
申请号：US10993315
申请日：2004-11-19
申请人： James Phillip , William Stuble , Mike Ventura , Donald Robertson
发明人： James Phillip , William Stuble , Mike Ventura , Donald Robertson
IPC分类号： C02F1/48
CPC分类号： C22B26/10 , B03C1/03 , B03C1/18 , C01D7/126 , C22B1/00
摘要： A process for the beneficiation of trona includes supplying a trona feedstream that is crushed and dried. The trona is then separated into a first size fraction and a second size fraction. Impurities are removed from the first size fraction using at least one magnetic separator. The magnetic separator includes a plurality of stages. Each stage includes a conveyer system comprising a first end, a second end, and a conveyer belt. Each stage also includes a magnetic roller disposed at the second end of the conveyer system and a splitter disposed adjacent the second end of the conveyer system for separating a fraction of magnetic impurities from the trona to create a beneficiated fraction. At least one conveyer belt is deionized. Airborne dust particles are removed from an area surrounding at least one conveyer system.
摘要翻译：选择天然碱的方法包括提供被粉碎和干燥的天然碱原料流。然后将天然碱分离成第一尺寸部分和第二尺寸部分。使用至少一个磁选机从第一尺寸部分除去杂质。磁选机包括多个级。每个阶段包括一个包括第一端，第二端和输送带的输送系统。每个阶段还包括设置在输送系统的第二端处的磁性辊和邻近输送系统的第二端设置的分离器，用于将一部分磁性杂质与天然碱分离以产生精选馏分。至少一个输送带是去离子的。从至少一个输送系统周围的区域去除空气中的尘埃颗粒。

10. 发明授权

US1270734A Nut-lock. 失效
公开(公告)号：US1270734A
公开(公告)日：1918-06-25
申请号：US20523517
申请日：1917-12-03
申请人： DONALD ROBERTSON , GEORGE P BEVERIDGE , HENNING BRUNO W
发明人： HENNING BRUNO W
CPC分类号： F16B39/08 , Y10S411/928

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