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1. 发明申请

US20080009126A1 Plasma deposition apparatus and method for making polycrystalline silicon 有权
标题翻译：等离子体沉积装置及制造多晶硅的方法
公开(公告)号：US20080009126A1
公开(公告)日：2008-01-10
申请号：US11714223
申请日：2007-03-06
申请人： Mohd A. Aslami , Dau Wu , DeLuca Charles
发明人： Mohd A. Aslami , Dau Wu , DeLuca Charles
IPC分类号： H01L21/20
CPC分类号： C23C16/24 , C23C16/513 , H05H1/30
摘要： A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.
摘要翻译：一种用于制造多晶硅的等离子体沉积设备，包括用于沉积所述多晶硅的室，所述室具有用于回收未沉积气体的排气系统; 位于所述沉积室内的用于保持具有沉积表面的目标基底的支撑体，所述沉积表面限定沉积区; 至少一个感应耦合等离子体焰炬，其位于所述沉积室内并与所述支撑件间隔开，所述至少一个感应耦合等离子体焰炬产生基本垂直于所述沉积表面的等离子体火焰，所述等离子体火焰限定用于在至少一个前体气体源，以产生用于沉积多晶硅层沉积表面的多晶硅。

2. 发明授权

US07858158B2 Plasma deposition apparatus and method for making polycrystalline silicon 有权
标题翻译：等离子体沉积装置及制造多晶硅的方法
公开(公告)号：US07858158B2
公开(公告)日：2010-12-28
申请号：US12433188
申请日：2009-04-30
申请人： Mohd A. Aslami , Dau Wu , DeLuca Charles
发明人： Mohd A. Aslami , Dau Wu , DeLuca Charles
IPC分类号： H05H1/24 , B01J19/08 , G21H1/00 , G21H5/00 , H01F41/00
CPC分类号： C23C16/24 , C23C16/513 , H05H1/30
摘要： A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.
摘要翻译：一种用于制造多晶硅的等离子体沉积设备，包括用于沉积所述多晶硅的室，所述室具有用于回收未沉积气体的排气系统; 位于所述沉积室内的用于保持具有沉积表面的目标基底的支撑体，所述沉积表面限定沉积区; 至少一个感应耦合等离子体焰炬，其位于所述沉积室内并与所述支撑件间隔开，所述至少一个感应耦合等离子体焰炬产生基本垂直于所述沉积表面的等离子体火焰，所述等离子体火焰限定用于在至少一个前体气体源，以产生用于沉积多晶硅层沉积表面的多晶硅。

3. 发明授权

US07816269B2 Plasma deposition apparatus and method for making polycrystalline silicon 有权
公开(公告)号：US07816269B2
公开(公告)日：2010-10-19
申请号：US11714223
申请日：2007-03-06
申请人： Mohd A. Aslami , Dau Wu , DeLuca Charles
发明人： Mohd A. Aslami , Dau Wu , DeLuca Charles
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23C16/24 , C23C16/513 , H05H1/30
摘要： A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.

4. 发明申请

US20090209093A1 PLASMA DEPOSITION APPARATUS AND METHOD FOR MAKING POLYCRYSTALLINE SILICON 有权
标题翻译：等离子体沉积装置和制备多晶硅的方法
公开(公告)号：US20090209093A1
公开(公告)日：2009-08-20
申请号：US12433188
申请日：2009-04-30
申请人： MOHD A. ASLAMI , DAU WU , DeLUCA CHARLES
发明人： MOHD A. ASLAMI , DAU WU , DeLUCA CHARLES
IPC分类号： H01L21/20
CPC分类号： C23C16/24 , C23C16/513 , H05H1/30
摘要： A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.
摘要翻译：一种用于制造多晶硅的等离子体沉积设备，包括用于沉积所述多晶硅的室，所述室具有用于回收未沉积气体的排气系统; 位于所述沉积室内的用于保持具有沉积表面的目标基底的支撑体，所述沉积表面限定沉积区; 至少一个感应耦合等离子体焰炬，其位于所述沉积室内并与所述支撑件间隔开，所述至少一个感应耦合等离子体焰炬产生基本垂直于所述沉积表面的等离子体火焰，所述等离子体火焰限定用于在至少一个前体气体源，以产生用于沉积多晶硅层沉积表面的多晶硅。

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