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    • 1. 发明申请
    • METHOD OF FORMING CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE
    • 形成电流注入/隧道发光装置的方法
    • US20110244609A1
    • 2011-10-06
    • US12956640
    • 2010-11-30
    • Robbie J. JorgensonDavid J. King
    • Robbie J. JorgensonDavid J. King
    • H01L33/60H01L21/20
    • H01L33/105H01L33/04H01L33/06H01L33/405Y10T29/5313
    • An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.
    • 一种用于制造它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒(TB)结构; 面向TB结构的TB生长外延金属镜(TB-GEMM)结构,其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中,活动区域包括MQW结构。 在一些实施方案中,TB-GEMM包括合金组合物,使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜(可选地为GEMM)。 在一些实施例中,GEMM中的至少一个沉积在衬底上,并且与衬底晶格匹配。
    • 4. 发明申请
    • CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE AND METHOD
    • 电流注入/隧道发光装置及方法
    • US20090212278A1
    • 2009-08-27
    • US12393029
    • 2009-02-25
    • Robbie J. JorgensonDavid J. King
    • Robbie J. JorgensonDavid J. King
    • H01L33/00H05K13/00
    • H01L33/105H01L33/04H01L33/06H01L33/405Y10T29/5313
    • An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.
    • 一种用于制作它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒(TB)结构; 面向TB结构的TB生长外延金属镜(TB-GEMM)结构,其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中,活动区域包括MQW结构。 在一些实施方案中,TB-GEMM包括合金组合物,使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜(可选地为GEMM)。 在一些实施例中,GEMM中的至少一个沉积在衬底上,并且与衬底晶格匹配。
    • 7. 发明授权
    • Multi-tiered system of leveller units
    • 整平机单元的多层系统
    • US5328154A
    • 1994-07-12
    • US947220
    • 1992-09-18
    • Warren J. BlatzDavid J. KingGordon G. Wilson
    • Warren J. BlatzDavid J. KingGordon G. Wilson
    • B66F7/24E02C3/00
    • B66F7/243
    • A multi-tiered system of leveller units for the levelling of recreational vehicles. The leveller units each comprise a planar body, with upper and lower surfaces circumscribed by edges. The body of each unit bears a plurality of pins upwardly extending from spaced locations in the upper surface and has a plurality of pin-engaging pockets formed in the lower surface to matably receive corresponding pins of other similar units. The pins are of slightly smaller size than the corresponding pockets so that when the pins of one unit are associated with the pockets of another, there is provided a loose engagement therebetween. The body may be formed of a discontinuous webbing providing light-weight strength and support to the units to support the large loads placed thereupon.
    • 用于整修娱乐车辆的整平机的多层次系统。 整平器单元各自包括平面主体,上表面和下表面被边缘包围。 每个单元的主体具有从上表面中的间隔位置向上延伸的多个销,并且具有形成在下表面中的多个销接合凹坑,以可以适当地接收其它类似单元的相应销。 销的尺寸比相应的袋稍小,使得当一个单元的销与另一个的袋相关联时,在它们之间提供松散的接合。 主体可以由不连续的织带形成,为单元提供轻量级的强度和支撑,以支撑放置在其上的大负载。
    • 9. 发明授权
    • Method of forming current-injecting/tunneling light-emitting device
    • 形成电流注入/隧道发光器件的方法
    • US08865492B2
    • 2014-10-21
    • US12956640
    • 2010-11-30
    • Robbie J. JorgensonDavid J. King
    • Robbie J. JorgensonDavid J. King
    • H01L33/60H01L21/20H01L33/40H01L33/10H01L33/06H01L33/04
    • H01L33/105H01L33/04H01L33/06H01L33/405Y10T29/5313
    • An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.
    • 一种用于制造它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒(TB)结构; 面向TB结构的TB生长外延金属镜(TB-GEMM)结构,其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中,活动区域包括MQW结构。 在一些实施方案中,TB-GEMM包括合金组合物,使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜(可选地为GEMM)。 在一些实施例中,GEMM中的至少一个沉积在衬底上,并且与衬底晶格匹配。
    • 10. 发明授权
    • Current-injecting/tunneling light-emitting device and method
    • 电流注入/隧道发光装置及方法
    • US07842939B2
    • 2010-11-30
    • US12393029
    • 2009-02-25
    • Robbie J. JorgensonDavid J. King
    • Robbie J. JorgensonDavid J. King
    • H01L29/06
    • H01L33/105H01L33/04H01L33/06H01L33/405Y10T29/5313
    • An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.
    • 一种用于制作它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒(TB)结构; 面向TB结构的TB生长外延金属镜(TB-GEMM)结构,其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中,活动区域包括MQW结构。 在一些实施方案中,TB-GEMM包括合金组合物,使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜(可选地为GEMM)。 在一些实施例中,GEMM中的至少一个沉积在衬底上,并且与衬底晶格匹配。