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1. 发明授权

US11926522B1 Packaging of microfluidic devices and microfluidic integrated systems and method of fabrication 有权
公开(公告)号：US11926522B1
公开(公告)日：2024-03-12
申请号：US17719045
申请日：2022-04-12
申请人： CORPORATION FOR NATIONAL RESEARCH INITIATIVES
发明人： Michael A. Huff
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/007 , B81C1/00301 , B81B2201/0264 , B81B2201/054 , B81B2207/092 , B81B2207/095 , B81B2207/096 , B81C2203/019
摘要： A package and method of packaging for integrated microfluidic devices and systems is disclosed wherein a package is made from individually processed and patterned layers of LTCC green tape, that is aligned and stacked, and then co-fired to form a stable LTCC ceramic packaging modules. Subsequently, microfluidic device die and/or integrated microfluidic systems device die are bonded to pre-determined areas of the packaging modules and the modules are aligned bonded together to form leak-free, sealed packages for the microfluidic devices and systems. The use of LTCC materials and techniques provides a low-cost flexible and easily customizable packaging approach for microfluidic devices and systems that can be designed and transitioned into production with significant development time and cost.

2. 发明授权

US11035496B2 Three-way microvalve device and method of fabrication 有权
公开(公告)号：US11035496B2
公开(公告)日：2021-06-15
申请号：US16397729
申请日：2019-04-29
申请人： CORPORATION FOR NATIONAL RESEARCH INITIATIVES
发明人： Michael A. Huff
IPC分类号： F16K99/00
摘要： A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve are disclosed. The micro-valve device has a wide range of applications, including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The discloses three-way micro-valve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types, and can also use a number of different actuation methods, including actuation methods that have very small actuation pressures and energy densities even at higher fluidic pressures. This is enabled by a novel pressure-balancing scheme, wherein the fluid pressure balances the actuator mechanism so that only a small amount of actuation pressure (or force) is needed to switch the state of the actuator and device from open to closed, or closed to open.

3. 发明申请

US20180197711A1 METHOD FOR THE FABRICATION OF ELECTRON FIELD EMISSION DEVICES INCLUDING CARBON NANOTUBE ELECTRON FIELD EMISSION DEVICES 审中-公开
公开(公告)号：US20180197711A1
公开(公告)日：2018-07-12
申请号：US15853485
申请日：2017-12-22
申请人： CORPORATION FOR NATIONAL RESEARCH INITIATIVES
发明人： Mehmet Ozgur , Paul Sunal , Lance Oh , Michael Huff , Michael Pedersen
IPC分类号： H01J1/304 , H01J9/02 , B82Y10/00 , B82Y40/00
CPC分类号： H01J1/304 , B82Y10/00 , B82Y40/00 , H01J9/025 , H01J2201/30469
摘要： The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

4. 发明申请

US20150034592A1 METHOD FOR ETCHING DEEP, HIGH-ASPECT RATIO FEATURES INTO GLASS, FUSED SILICA, AND QUARTZ MATERIALS 有权
标题翻译：将深层浸泡，玻璃，高分子二氧化硅和石墨材料的高比例特征的方法
公开(公告)号：US20150034592A1
公开(公告)日：2015-02-05
申请号：US13954057
申请日：2013-07-30
申请人： Corporation For National Research Initiatives
发明人： Michael A. Huff , Michael Pedersen
IPC分类号： H01J37/32 , H01L21/308
CPC分类号： H01J37/3211 , B81C1/00619 , C03C15/00 , C03C2218/34 , H01J2237/3347 , H01L21/31116 , H01L21/31144
摘要： A method or process is disclosed for etching deep, high-aspect ratio features into silicon dioxide material layers and substrates, including glass, fused silica, quartz, or similar materials, using a plasma etch technology. The method has application in the fabrication and manufacturing of MEMS, microelectronic, micro-mechanical, photonic and nanotechnology devices in which silicon dioxide material layers or substrates are used and must be patterned and etched. Devices that benefit from the method described in this invention include the fabrication of MEMS gyroscopes, resonators, oscillators, microbalances, accelerometers, for example. The etch method or process allows etch depths ranging from below 10 microns to over 1 millimeter and aspect ratios from less than 1 to 1 to over 10 to 1 with etched feature sidewalls having vertical or near vertical angles. Additionally, the disclosed method provides requirements of the etched substrates to reduce or eliminate undesired effects of an etch.
摘要翻译：公开了一种用于使用等离子体蚀刻技术将深的高纵横比特征蚀刻成二氧化硅材料层和衬底（包括玻璃，熔融石英，石英或类似材料）的方法或工艺。该方法在MEMS，微电子，微机械，光子和纳米技术设备的制造和制造中的应用，其中使用二氧化硅材料层或衬底并且必须进行图案化和蚀刻。受益于本发明描述的方法的装置包括例如制造MEMS陀螺仪，谐振器，振荡器，微量平衡，加速度计。蚀刻方法或工艺允许蚀刻深度范围从低于10微米至超过1毫米，纵横比小于1至1至超过10比1，具有垂直或近似垂直角的蚀刻特征侧壁。另外，所公开的方法提供蚀刻的衬底的要求以减少或消除不期望的蚀刻效应。

5. 发明申请

US20040150939A1 MEMS-based variable capacitor 有权
标题翻译：基于MEMS的可变电容器
公开(公告)号：US20040150939A1
公开(公告)日：2004-08-05
申请号：US10716866
申请日：2003-11-20
申请人： Corporation for National Research Initiatives
发明人： Michael A. Huff
IPC分类号： H01G005/00
CPC分类号： H01G5/014 , H01G5/18 , H01L23/66 , H01L2224/16 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/3025
摘要： A variable capacitor device using MEMS or micromachining techniques wherein thin-films of materials are deposited, patterned and etched to form movable micromechanical elements on the surface of a substrate composed of either semiconductor, glass, metal, or ceramic material. In one embodiment of the present invention to achieve higher frequency performance as well as other benefits, the substrate is comprised of Low-Temperature Co-Fired Ceramics (LTCC). The variable capacitor is an electrostatically actuated micromechanical device and if fabricated on a LTCC multi-layered substrate material has continuous electrical connections through the layers. The same LTCC substrate material can also be used to enclose the device by selectively removing a portion of the upper substrate so as to form a cavity. The two substrates are then bonded together to enclose and protect the variable capacitor. An integrated circuit can be incorporation onto the multi-level substrate structure to enable a electronic closed-loop controlled variable capacitor module. The integrated circuit is flip-chip bonded at the bottom of the substrate structure with appropriate electrical connections between the integrated circuit and the MEMS variable capacitor device. A variation of the present invention utilizes a zipper actuation method wherein the tuning ratio of the variable capacitor is increased to very high levels. Yet another variation of the present invention utilizes a differential gap between the top and bottom electrodes such that the actuation electrodes do not physically contact one another. Yet another implementation of the present invention uses an extra set of electrodes or mechanical mechanism so as to lock the value of the capacitor undefinitely. Yet another implementation uses shaped actuation electrodes so as to linearize the relationship between the applied actuation voltage and the resultant capacitance of the device.
摘要翻译：一种使用MEMS或微加工技术的可变电容器器件，其中沉积，图案化和蚀刻材料的薄膜以在由半导体，玻璃，金属或陶瓷材料组成的衬底的表面上形成可移动的微机械元件。在本发明的一个实施例中，为了实现更高的频率性能以及其他的益处，衬底由低温共烧陶瓷（LTCC）组成。可变电容器是静电驱动的微机械装置，并且如果在LTCC多层衬底材料上制造具有通过层的连续电连接。也可以使用相同的LTCC衬底材料通过选择性地去除上部衬底的一部分以形成空腔来封闭该器件。然后将两个基板结合在一起以封装并保护可变电容器。集成电路可以并入到多级衬底结构中，以实现电子闭环控制的可变电容器模块。集成电路通过在集成电路和MEMS可变电容器器件之间的适当电气连接而在衬底结构的底部进行倒装芯片接合。本发明的变型使用拉链致动方法，其中可变电容器的调谐比增加到非常高的水平。本发明的又一变型使用顶部和底部电极之间的差分间隙，使得致动电极彼此不物理接触。本发明的另一个实施方案使用额外的一组电极或机械机构，以便无限期地锁定电容器的值。另一种实施方案使用成形的致动电极，以使所施加的致动电压和所得到的器件的电容之间的关系线性化。

6. 发明申请

US20040008397A1 Electro-optic phase-only spatial light modulator 有权
标题翻译：电光相位空间光调制器
公开(公告)号：US20040008397A1
公开(公告)日：2004-01-15
申请号：US10435664
申请日：2003-05-12
申请人： Corporation for National Research Initiatives
发明人： William A. Noonan
IPC分类号： G02F001/07 , G02F001/03
CPC分类号： G02F1/21 , G02F2203/02 , G02F2203/12 , G02F2203/50 , G03H1/2294 , G03H2225/22 , G03H2225/32 , G03H2225/34 , G03H2225/52 , G03H2226/02
摘要： An electro-optic, phase-only spatial light modulator is disclosed which uses an electro-optic wafer, such as lithium niobate (LiNbO3) or lead-lanthanum-zirconate-titanate (PLZT). The electro-optic wafer is sandwiched between a transparent top electrode that forms a solid ground plane and a bottom electrode that is segmented into an array of electrode pads. Voltage source circuitry for each electrode is located immediately beneath the electrode. When a voltage is applied across the electrodes, an electrostatic field is generated between the conductors, and the refractive index of the electro-optic wafer changes slightly. The spatial light modulator can also include a totally reflecting dielectric mirror on the bottom face of the electro-optic wafer and a partially reflecting dielectric mirror deposited on the top face. Together, the mirrors and wafer form an asymmetric Fabry-Perot cavity. This resonant cavity enhances the effect that the small changes in the wafer's refractive index has, resulting in phase shifts of nullnullnull in the reflected light. Because the bottom electrode is segmented, a different voltage can be applied to each electrode. Thus, the refractive index, and therefore the phase of the exiting light wave, can be manipulated to vary with position. In this way, the phase of the outgoing optical wavefront is spatially modulated. The voltage source integrated circuitry for each electrode is located immediately behind the electrode pad. This integrated circuitry is fabricated on a separate silicon wafer that is later bonded to the electro-optic wafer.
摘要翻译：公开了一种使用诸如铌酸锂（LiNbO 3）或铅 - 镧 - 锆酸盐 - 钛酸盐（PLZT）的电光晶片的电光相位空间光调制器。电光晶片被夹在形成固体接地平面的透明顶部电极和被分割成电极焊盘阵列的底部电极之间。每个电极的电压源电路位于电极的正下方。当跨电极施加电压时，在导体之间产生静电场，并且电光晶片的折射率稍微改变。空间光调制器还可以包括在电光晶片的底面上的全反射介电镜和沉积在顶面上的部分反射介电镜。镜子和晶片一起形成不对称的法布里 - 珀罗腔。该谐振腔增强了晶片折射率的小变化的影响，导致反射光中±½pi的相移。因为底部电极被分段，所以可以向每个电极施加不同的电压。因此，折射率以及出射光波的相位可以被操纵以随着位置而变化。以这种方式，出射光波阵面的相位被空间调制。每个电极的电压源集成电路位于电极焊盘的紧后面。该集成电路制造在随后结合到电光晶片的单独的硅晶片上。

7. 发明授权

US11927281B1 Piezoelectrically-actuated microvalve device and method of fabrication 有权
公开(公告)号：US11927281B1
公开(公告)日：2024-03-12
申请号：US17858041
申请日：2022-07-05
申请人： CORPORATION FOR NATIONAL RESEARCH INITIATIVES
发明人： Michael A. Huff , Mehmet Ozgur
IPC分类号： F16K99/00
CPC分类号： F16K99/0048 , F16K99/0015 , F16K2099/0073 , F16K2099/0078
摘要： A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve that uses a multicity of piezoelectric actuators. The 3-way has a wide range of applications including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The three-way microvalve device and method of fabrication can be tailored to the requirements of a wide range of applications and fluid types. The microvalve can be used to control fluids at high pressures and provides for low flow resistances when the microvalve is open and has low leakage when closed.

8. 发明授权

US11326717B1 Three-way piezoelectrically-actuated microvalve device and method of fabrication 有权
公开(公告)号：US11326717B1
公开(公告)日：2022-05-10
申请号：US15894716
申请日：2018-02-12
申请人： CORPORATION FOR NATIONAL RESEARCH INITIATIVES
发明人： Michael Huff
IPC分类号： F16K99/00
摘要： A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve which uses a single piezoelectric actuator. The present invention has a wide range of applications including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The present invention allows for the implementation of a three-way microvalve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types. The microvalve may employ a novel pressure-balancing scheme wherein the fluid pressure balances the actuator mechanism so that only a small amount of actuation pressure (or force) is needed to switch the state of the actuator and device from open to closed, or closed to open.

9. 发明授权

US11049725B1 Method for etching deep, high-aspect ratio features into silicon carbide and gallium nitride 有权
公开(公告)号：US11049725B1
公开(公告)日：2021-06-29
申请号：US14290317
申请日：2014-05-29
申请人： Corporation for National Research Initiatives
发明人： Mehmet Ozgur , Michael Pedersen , Michael A. Huff
IPC分类号： H01L21/311 , H01L21/3065 , H01L21/033 , H01L21/768 , H01L29/16 , H01L29/20
摘要： A method for the etching of deep, high-aspect ratio features into silicon carbide (SiC), gallium nitride (GaN) and similar materials using an Inductively-Coupled Plasma (ICP) etch process technology is described. This technology can also be used to etch features in silicon carbide and gallium nitride having near vertical sidewalls. The disclosed method has application in the fabrication of electronics, microelectronics, power electronics, Monolithic Microwave Integrated Circuits (MMICs), high-voltage electronics, high-temperature electronics, high-power electronics, Light-Emitting Diodes (LEDs), Micro-Electro-Mechanical Systems (MEMS), micro-mechanical devices, microelectronic devices and systems, nanotechnology devices and systems, Nano-Electro-Mechanical Systems (NEMS), photonic devices, and any devices and/or structures made from silicon carbide and/or gallium nitride. The disclosed method also has application in the fabrication of through-substrate vias and through-wafer vias, including those that are subsequently filled with electrically conductive materials.

10. 发明授权

US10910185B2 Method for the fabrication of electron field emission devices including carbon nanotube electron field emission devices 有权
公开(公告)号：US10910185B2
公开(公告)日：2021-02-02
申请号：US16527533
申请日：2019-07-31
申请人： CORPORATION FOR NATIONAL RESEARCH INITIATIVES
发明人： Mehmet Ozgur , Paul Sunal , Lance Oh , Michael Huff , Michael Pedersen
IPC分类号： H01J1/304 , H01J9/02 , B82Y40/00 , B82Y10/00
摘要： The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto an electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

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