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1. 发明申请

US20100167536A1 METHOD FOR REMOVING HARDENED POLYMER RESIDUE 审中-公开
标题翻译：去除硬化聚合物残留物的方法
公开(公告)号：US20100167536A1
公开(公告)日：2010-07-01
申请号：US12643911
申请日：2009-12-21
申请人： Chung-Kyung Jung
发明人： Chung-Kyung Jung
IPC分类号： H01L21/768
CPC分类号： H01L21/76838 , H01L21/02071 , H01L21/32139
摘要： A method for efficiently removing hardened polymer residues generated in the process of forming metal lines. The method includes forming a metal layer over a lower film, forming a sacrificial protective film over the metal layer, forming a photosensitive pattern over the sacrificial protective film, forming a metal line by selectively etching the sacrificial protective film and the metal layer using the photosensitive pattern as a mask such that a residual sacrificial protective film is formed over the metal line, and then removing the residual sacrificial protective film from the metal line.
摘要翻译：一种有效去除在金属线形成过程中产生的硬化聚合物残渣的方法。该方法包括在下部膜上形成金属层，在金属层上形成牺牲保护膜，在牺牲保护膜上形成感光图案，通过使用感光体选择性蚀刻牺牲保护膜和金属层来形成金属线图案作为掩模，使得在金属线上形成残留的牺牲保护膜，然后从金属线除去残留的牺牲保护膜。

2. 发明申请

US20100167524A1 METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体器件金属互连的方法
公开(公告)号：US20100167524A1
公开(公告)日：2010-07-01
申请号：US12638129
申请日：2009-12-15
申请人： Chung-Kyung Jung
发明人： Chung-Kyung Jung
IPC分类号： H01L21/768 , C23F1/08
CPC分类号： H01L21/76816 , H01L21/02063 , H01L21/76807 , H01L2221/1063 , Y10S438/906
摘要： In a method for fabricating a metal interconnection of a semiconductor device, a lower interconnection and a lower insulation layer are formed over a semiconductor substrate. An etch stop layer is formed over the lower insulation layer. An upper insulation layer is formed over the etch stop layer. A first via hole is formed to expose the etch stop layer corresponding to the lower interconnection. A second via hole exposing the lower interconnection is formed by a primary etching process that selectively removes the etch stop layer exposed by the first via hole. A chemical cleaning process is performed on the second via hole, wherein polymer is formed over the surface of the lower interconnection during the chemical cleaning process. The polymer is removed from the second via hole by a secondary etching process using vaporized gas.
摘要翻译：在制造半导体器件的金属互连的方法中，在半导体衬底上形成下互连和下绝缘层。在下绝缘层上形成蚀刻停止层。在绝缘层上方形成上绝缘层。形成第一通孔以暴露与下部互连相对应的蚀刻停止层。暴露下部互连的第二通孔通过主要蚀刻工艺形成，该主蚀刻工艺选择性地去除由第一通孔暴露的蚀刻停止层。在第二通孔上进行化学清洗处理，其中在化学清洁过程中聚合物形成在下互连的表面上。通过使用汽化气体的二次蚀刻工艺从第二通孔中除去聚合物。

3. 发明申请

US20100167455A1 METHOD FOR FABRICATION OF CMOS IMAGE SENSOR 审中-公开
标题翻译： CMOS图像传感器的制造方法
公开(公告)号：US20100167455A1
公开(公告)日：2010-07-01
申请号：US12642049
申请日：2009-12-18
申请人： Chung-Kyung Jung
发明人： Chung-Kyung Jung
IPC分类号： H01L31/0232 , C23F1/08
CPC分类号： H01L21/31144 , H01L21/0273 , H01L27/1462 , H01L27/14685
摘要： Disclosed is a method for fabrication of a CMOS image sensor capable of improving adhesion between an interlayer insulating film and photoresist. According to embodiments in this disclosure, the CMOS image sensor fabrication method may include: forming a plurality of photodiodes over a semiconductor substrate at regular intervals; forming an interlayer insulating film over the semiconductor substrate including the plurality of photodiodes; applying photoresist over the entirety of the interlayer insulating film; hard-baking the photoresist; conducting exposure and development of the photoresist to expose a part of the interlayer insulating film corresponding to the photodiodes, thereby completing a photoresist pattern; and using the photoresist pattern as a mask to selectively etch the exposed part of the interlayer insulating film.
摘要翻译：公开了一种用于制造能够改善层间绝缘膜和光致抗蚀剂之间的粘附性的CMOS图像传感器的方法。根据本公开的实施例，CMOS图像传感器制造方法可以包括：以规则的间隔在半导体衬底上形成多个光电二极管; 在包括所述多个光电二极管的所述半导体衬底上形成层间绝缘膜; 在整个层间绝缘膜上施加光致抗蚀剂; 硬烘烤光刻胶; 进行光致抗蚀剂的曝光和显影以暴露对应于光电二极管的层间绝缘膜的一部分，从而完成光致抗蚀剂图案; 并且使用光致抗蚀剂图案作为掩模来选择性地蚀刻层间绝缘膜的暴露部分。

4. 发明申请

US20100164043A1 METHOD FOR FABRICATING CMOS IMAGE SENSOR 失效
标题翻译： CMOS图像传感器的制作方法
公开(公告)号：US20100164043A1
公开(公告)日：2010-07-01
申请号：US12636050
申请日：2009-12-11
申请人： Chung-Kyung Jung
发明人： Chung-Kyung Jung
IPC分类号： H01L31/14 , H01L31/18
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14685
摘要： A method of forming a CMOS image sensor and a CMOS image sensor. A method of forming a CMOS image sensor may include forming a plurality of photodiodes on and/or over a semiconductor substrate at regular intervals, forming an interlayer insulating film on and/or over an entire surface of a semiconductor substrate including photodiodes, coating an organic compound on and/or over an entire surface of an interlayer insulating film, coating photoresist on and/or over an organic compound, subjecting a photoresist to exposure and/or development to form a photoresist pattern which may expose an interlayer insulating film opposite to a photodiode region, selectively etching a portion of an exposed interlayer insulating film using a photoresist pattern as a mask, and/or removing a photoresist pattern.
摘要翻译：一种形成CMOS图像传感器和CMOS图像传感器的方法。形成CMOS图像传感器的方法可以包括在半导体衬底上和/或之上以规则的间隔形成多个光电二极管，在包括光电二极管的半导体衬底的整个表面上和/或整个表面上形成层间绝缘膜，在层间绝缘膜的整个表面上和/或整个表面上的化合物，在有机化合物上和/或有机化合物上涂覆光致抗蚀剂，使光致抗蚀剂曝光和/或显影以形成光致抗蚀剂图案，其可以暴露与光电二极管区域，使用光致抗蚀剂图案作为掩模来选择性地蚀刻暴露的层间绝缘膜的一部分，和/或去除光致抗蚀剂图案。

5. 发明申请

US20100159680A1 Method for Manufacturing Semiconductor Device 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20100159680A1
公开(公告)日：2010-06-24
申请号：US12617594
申请日：2009-11-12
申请人： Chung Kyung JUNG
发明人： Chung Kyung JUNG
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/28035 , H01L29/4916
摘要： A method for manufacturing a semiconductor device is disclosed. The method includes the steps of forming a nitride film on a semiconductor substrate, forming a photoresist pattern on the nitride film, the photoresist pattern exposing a portion of the semiconductor substrate, implanting in a portion of the semiconductor substrate using the photoresist pattern as a mask, removing the photoresist pattern by ashing and/or stripping, washing the resulting structure to remove photoresist pattern splinters, fragments or particles on the nitride film, and removing the nitride film by wet etching.
摘要翻译：公开了一种制造半导体器件的方法。该方法包括以下步骤：在半导体衬底上形成氮化物膜，在氮化物膜上形成光致抗蚀剂图案，暴露半导体衬底的一部分的光致抗蚀剂图案，使用光致抗蚀剂图案作为掩模将半导体衬底的一部分注入，通过灰化和/或剥离除去光致抗蚀剂图案，洗涤所得结构以除去氮化物膜上的光致抗蚀剂图案碎片，碎片或颗粒，以及通过湿蚀刻去除氮化物膜。

6. 发明申请

US20100155955A1 METHOD FOR MANUFACTURING SYSTEM-IN-PACKAGE 审中-公开
标题翻译：制造系统包装的方法
公开(公告)号：US20100155955A1
公开(公告)日：2010-06-24
申请号：US12620115
申请日：2009-11-17
申请人： Chung-Kyung Jung
发明人： Chung-Kyung Jung
IPC分类号： H01L23/498 , H01L21/98
CPC分类号： H01L25/50 , H01L21/02043 , H01L21/76898 , H01L23/3677 , H01L24/30 , H01L2224/29111 , H01L2224/81801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/0132 , H01L2924/14 , H01L2924/19041 , H01L2924/19042
摘要： A method of manufacturing a System In Package (SIP) and devices thereof. A method of manufacturing a SIP may include providing a first chip having a first substrate region and/or a first metal connection portion. A method of manufacturing a SIP may include providing a second chip having a second substrate region and/or a second metal connection portion. A method of manufacturing a SIP may include bonding a first metal connection portion with a second metal connection portion, which may stack a second chip with a first chip. A method of manufacturing a SIP may include subjecting a second substrate region to reactive ion etching to expose a portion of a second metal connection portion and/or to form a deep contact hole. A method of manufacturing a SIP may include treating a surface of a deep contact hole with tetra-methyl ammonium hydroxide and/or nitric acid.
摘要翻译：一种制造系统级封装（SIP）及其装置的方法。制造SIP的方法可以包括提供具有第一衬底区域和/或第一金属连接部分的第一芯片。制造SIP的方法可以包括提供具有第二基板区域和/或第二金属连接部分的第二芯片。制造SIP的方法可以包括将第一金属连接部分与第二金属连接部分接合，第二金属连接部分可以与第一芯片堆叠第二芯片。制造SIP的方法可以包括使第二衬底区域经受反应离子蚀刻以暴露第二金属连接部分的一部分和/或形成深接触孔。制造SIP的方法可以包括用四甲基氢氧化铵和/或硝酸处理深接触孔的表面。

7. 发明申请

US20100120195A1 METHOD FOR MANUFACTURING IMAGE SENSOR 审中-公开
标题翻译：制造图像传感器的方法
公开(公告)号：US20100120195A1
公开(公告)日：2010-05-13
申请号：US12615746
申请日：2009-11-10
申请人： Chung-Kyung Jung
发明人： Chung-Kyung Jung
IPC分类号： H01L21/30 , H01L21/306
CPC分类号： H01L21/02063 , H01L27/14634
摘要： In a method for forming an image sensor, an interlayer dielectric may be formed over a semiconductor substrate. The interlayer dielectric may include an interconnection. A via hole may be formed through the interlayer dielectric by performing an etching process on the semiconductor substrate. The via hole exposes the interconnection. A first cleaning process and a second cleaning process may be performed on the semiconductor substrate including the via hole. The contact plug may be formed by filing a metal material in the via hole. The image sensing unit, with a first doping layer and a second doping layer stacked therein may be formed over the interlayer dielectric including the interconnection and the contact plug. Here, the first and second cleaning processes include removing residues formed over a sidewall of the via hole through the etching process.
摘要翻译：在形成图像传感器的方法中，可以在半导体衬底上形成层间电介质。层间电介质可以包括互连。可以通过对半导体衬底进行蚀刻工艺，通过层间电介质形成通孔。通孔露出互连。可以在包括通孔的半导体衬底上执行第一清洁处理和第二清洁处理。接触插塞可以通过在通孔中填充金属材料而形成。具有堆叠在其中的第一掺杂层和第二掺杂层的图像感测单元可以形成在包括互连和接触插塞的层间电介质上。这里，第一和第二清洗方法包括通过蚀刻工艺除去在通孔的侧壁上形成的残留物。

8. 发明申请

US20100117184A1 METHOD OF MANUFACTURING IMAGE SENSOR 审中-公开
标题翻译：制造图像传感器的方法
公开(公告)号：US20100117184A1
公开(公告)日：2010-05-13
申请号：US12615757
申请日：2009-11-10
申请人： Chung-Kyung Jung
发明人： Chung-Kyung Jung
IPC分类号： H01L31/0248 , H01L31/02
CPC分类号： H01L27/14636 , H01L27/1464
摘要： A method of manufacturing an image sensor and an image sensor. A method of manufacturing an image sensor may include forming an interlayer dielectric including a metal line on and/or over a semiconductor substrate, forming an image sensing part on and/or over an interlayer dielectric, and/or forming a hard mask in which an opening corresponding to a metal line may be defined on and/or over an image sensing part. A method of manufacturing an image sensor may include performing an etch process to form an auxiliary via hole exposing an inside of an image sensing part, and/or forming a spacer within a auxiliary via hole by an etch byproduct of a hard mask. A method of manufacturing an image sensor may include performing an etch process including a chemical to remove a spacer, and/or etching an image sensing part and/or an interlayer dielectric to form a deep via hole.
摘要翻译：一种制造图像传感器和图像传感器的方法。制造图像传感器的方法可以包括在半导体衬底上和/或之上形成包括金属线的层间电介质，在层间电介质上和/或之上形成图像感测部分，和/或形成硬掩模，其中对应于金属线的开口可以限定在图像感测部件上和/或上方。制造图像传感器的方法可以包括执行蚀刻工艺以形成暴露图像感测部分的内部的辅助通孔，和/或通过硬掩模的蚀刻副产物在辅助通孔内形成间隔物。制造图像传感器的方法可以包括执行包括化学去除间隔物的蚀刻工艺，和/或蚀刻图像感测部件和/或层间电介质以形成深通孔。

9. 发明申请

US20100032786A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE DEVICE 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100032786A1
公开(公告)日：2010-02-11
申请号：US12536391
申请日：2009-08-05
申请人： Chung-Kyung Jung
发明人： Chung-Kyung Jung
IPC分类号： H01L31/105 , H01L31/02
CPC分类号： H01L27/14636 , H01L27/14634 , H01L27/1469
摘要： A semiconductor device and a method for manufacturing the device include connecting a second wafer to a first wafer, forming a hard mask layer on and/or over a backside of the second wafer, forming a hard mask pattern over the second layer and then forming a via hole by etching the first and the second wafers to a predetermined depth using the hard mask pattern as an etching mask.
摘要翻译：半导体器件和用于制造器件的方法包括将第二晶片连接到第一晶片，在第二晶片的背面上和/或之上形成硬掩模层，在第二层上形成硬掩模图案，然后形成通过使用硬掩模图案作为蚀刻掩模将第一和第二晶片蚀刻到预定深度。

10. 发明申请

US20090166692A1 CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20090166692A1
公开(公告)日：2009-07-02
申请号：US12262944
申请日：2008-10-31
申请人： Chung Kyung JUNG
发明人： Chung Kyung JUNG
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14687
摘要： A CMOS image sensor may include a dielectric layer formed on a semiconductor substrate, first and second passivation layers sequentially formed on the whole surface of the dielectric layer, a planarization layer, a color filter layer, and an overcoating layer and a microlens sequentially formed on the second passivation layer. The CMOS image sensor may further include a plurality of metal pads arranged on the dielectric layer to surround the microlens, a water barrier formed on the dielectric layer between the microlens and the metal pads, and first and second open parts exposing the metal pads and the water barrier.
摘要翻译： CMOS图像传感器可以包括形成在半导体衬底上的电介质层，顺序地形成在电介质层的整个表面上的第一和第二钝化层，平坦化层，滤色器层和外涂层和微透镜，第二钝化层。 CMOS图像传感器还可以包括布置在电介质层上以围绕微透镜的多个金属焊盘，形成在微透镜和金属焊盘之间的电介质层上的防水屏障，以及暴露金属焊盘和水障碍

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