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1. 发明申请

US20210151341A1 MICRO-COMPONENT TRANSFER HEAD, MICRO-COMPONENT TRANSFER DEVICE, AND MICRO-COMPONENT DISPLAY 有权
公开(公告)号：US20210151341A1
公开(公告)日：2021-05-20
申请号：US15931621
申请日：2020-05-14
申请人： Yu-Chu LI , Pei-Hsin CHEN , Yi-Chun SHIH , Yi-Ching CHEN
发明人： Yu-Chu LI , Pei-Hsin CHEN , Yi-Chun SHIH , Yi-Ching CHEN
IPC分类号： H01L21/683 , H01L23/00
摘要： Herein disclosed are a micro-component transfer head, a micro-component transfer device, and a micro-component display. Said micro-component transfer head comprises a carrying surface that corresponds to a micro-component extraction area. Said extraction area conforms with a first geometric object, which comprises at least an acute angle. A second geometric object comprises at least a right angle and is constituted of n copies of the first geometric object, n being an integer greater than 1. The shape of the first geometric object differs from that of the second.

2. 外观设计

USD878068S1 Cart 有权
公开(公告)号：USD878068S1
公开(公告)日：2020-03-17
申请号：US29643089
申请日：2018-04-04
申请人： Chin-Chu Li
设计人： Chin-Chu Li
摘要： FIG. 1 is a perspective view of a cart showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a top view thereof;
FIG. 7 is a bottom view thereof; and,
FIG. 8 is a perspective view showing the cart in use.

3. 发明授权

US09188278B1 Lifting support structure 有权
标题翻译：起重支撑结构
公开(公告)号：US09188278B1
公开(公告)日：2015-11-17
申请号：US14280207
申请日：2014-05-16
申请人： Chin-Chu Li
发明人： Chin-Chu Li
IPC分类号： A47B9/00 , F16M11/28 , F16M11/42
CPC分类号： A47B9/10 , F16M11/28 , F16M11/42
摘要： A lifting support structure includes an actuating element having a cylinder and a movable rod moved reciprocally in the cylinder. A bearing seat is disposed on a lateral side of the actuating element, and one end of the movable rod is inserted in the bearing seat. A connecting rod is pivoted on the bearing seat and can pivot in the horizontal direction relative to the bearing seat. One end of the connecting rod is connected with the movable rod, and the other end is suspended freely. And a pedal is connected on the free end of the connecting rod.
摘要翻译：提升支撑结构包括具有气缸的致动元件和在气缸中往复运动的可动杆。轴承座设置在致动元件的侧面上，可动杆的一端插入轴承座。连杆在轴承座上枢转并能相对于轴承座在水平方向上枢转。连杆的一端与可动杆连接，另一端自由悬挂。踏板连接在连杆的自由端上。

4. 发明授权

US08502190B2 Device of light-emitting diode 有权
标题翻译：发光二极管装置
公开(公告)号：US08502190B2
公开(公告)日：2013-08-06
申请号：US13309530
申请日：2011-12-01
申请人： Po-Chun Liu , Chu-Li Chao , Yih-Der Guo
发明人： Po-Chun Liu , Chu-Li Chao , Yih-Der Guo
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007
摘要： A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure. The dielectric layer is to cover a sidewall of the pillar structure. The first electrode is located over the pillar structure, and the second electrode is located on the conductive carrier substrate.
摘要翻译：提供LED装置。 LED器件具有导电载体衬底，发光结构，多个柱结构，电介质层，第一电极和第二电极。发光结构位于导电载体基板上。柱结构位于发光结构上。电介质层覆盖柱结构的侧壁。第一电极位于柱结构上方，第二电极位于导电载体基板上。

5. 发明授权

US08482103B2 Nitride semiconductor template and fabricating method thereof 有权
标题翻译：氮化物半导体模板及其制造方法
公开(公告)号：US08482103B2
公开(公告)日：2013-07-09
申请号：US12963650
申请日：2010-12-09
申请人： Hsun-Chih Liu , Chen-Zi Liao , Yen-Hsiang Fang , Rong Xuan , Chu-Li Chao
发明人： Hsun-Chih Liu , Chen-Zi Liao , Yen-Hsiang Fang , Rong Xuan , Chu-Li Chao
IPC分类号： H01L29/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02513 , H01L21/02639 , H01L21/0265 , H01L21/3081 , H01L29/045 , H01L29/2003
摘要： A nitride semiconductor template including a substrate, a mask layer, a first nitride semiconductor layer and a second nitride semiconductor is provided. The substrate has a plurality of trenches, each of the trenches has a bottom surface, a first inclined sidewall and a second inclined sidewall. The mask layer covers the second inclined sidewall and exposes the first inclined sidewall. The first nitride semiconductor layer is disposed over the substrate and the mask layer. The first nitride semiconductor layer fills the trenches and in contact with the first inclined sidewall. The first nitride semiconductor layer has voids located outside the trenches and parts of the mask layer are exposed by the voids. The first nitride semiconductor layer has a plurality of nano-rods. The second nitride semiconductor layer covers the nano-rods. The spaces between the nano-rods are not entirely filled by the second nitride semiconductor layer.
摘要翻译：提供了包括基板，掩模层，第一氮化物半导体层和第二氮化物半导体的氮化物半导体模板。衬底具有多个沟槽，每个沟槽具有底表面，第一倾斜侧壁和第二倾斜侧壁。掩模层覆盖第二倾斜侧壁并暴露第一倾斜侧壁。第一氮化物半导体层设置在衬底和掩模层之上。第一氮化物半导体层填充沟槽并与第一倾斜侧壁接触。第一氮化物半导体层具有位于沟槽外部的空隙，并且掩模层的部分被空隙暴露。第一氮化物半导体层具有多个纳米棒。第二氮化物半导体层覆盖纳米棒。纳米棒之间的空间并不完全由第二氮化物半导体层填充。

6. 外观设计

USD683293S1 Disk wheel cover 有权
公开(公告)号：USD683293S1
公开(公告)日：2013-05-28
申请号：US29435081
申请日：2012-10-19
申请人： Chu-Li Wang
设计人： Chu-Li Wang

7. 发明申请

US20120161148A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US20120161148A1
公开(公告)日：2012-06-28
申请号：US13329336
申请日：2011-12-19
申请人： Yen-Hsiang Fang , Chu-Li Chao , Chih-Wei Hu , Yih-Der Guo
发明人： Yen-Hsiang Fang , Chu-Li Chao , Chih-Wei Hu , Yih-Der Guo
IPC分类号： H01L29/06 , H01L21/20 , H01L29/20
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/12
摘要： A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes a base material, a patterned nitride semiconductor, a protection layer, and a nitride semiconductor layer. The patterned nitride semiconductor layer is located on the base material and includes a plurality of nanorod structures and a plurality of block patterns, and an upper surface of the nanorod structures is substantially coplanar with an upper surface of the block patterns. The protection layer covers a side wall of the nanorod structure sand a side wall of the block patterns. The nitride semiconductor layer is located on the patterned nitride semiconductor layer, and a plurality of nanopores are located between the nitride semiconductor layer and the patterned nitride semiconductor layer.
摘要翻译：提供一种氮化物半导体衬底及其制造方法。氮化物半导体衬底包括基底材料，图案化氮化物半导体，保护层和氮化物半导体层。图案化氮化物半导体层位于基材上并且包括多个纳米棒结构和多个块图案，并且纳米棒结构的上表面与块图案的上表面基本共面。保护层覆盖纳米棒结构的侧壁，以阻挡块图案的侧壁。氮化物半导体层位于图案化的氮化物半导体层上，并且多个纳米孔位于氮化物半导体层和图案化氮化物半导体层之间。

8. 发明申请

US20120074383A1 DEVICE OF LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管装置
公开(公告)号：US20120074383A1
公开(公告)日：2012-03-29
申请号：US13309530
申请日：2011-12-01
申请人： Po-Chun Liu , Chu-Li Chao , Yih-Der Guo
发明人： Po-Chun Liu , Chu-Li Chao , Yih-Der Guo
IPC分类号： H01L33/06
CPC分类号： H01L33/0079 , H01L33/007
摘要： A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure. The dielectric layer is to cover a sidewall of the pillar structure. The first electrode is located over the pillar structure, and the second electrode is located on the conductive carrier substrate.
摘要翻译：提供LED装置。 LED器件具有导电载体衬底，发光结构，多个柱结构，电介质层，第一电极和第二电极。发光结构位于导电载体基板上。柱结构位于发光结构上。电介质层覆盖柱结构的侧壁。第一电极位于柱结构上方，第二电极位于导电载体基板上。

9. 外观设计

USD611802S1 Support 有权
标题翻译：支持
公开(公告)号：USD611802S1
公开(公告)日：2010-03-16
申请号：US29309221
申请日：2008-07-10
申请人： Chin-Chu Li
设计人： Chin-Chu Li

10. 发明授权

US07663153B2 Light emitting diode with embedded saw-tooth multilayer having a photonic crystal structure and process for fabricating the same 失效
标题翻译：具有嵌入式锯齿多层的发光二极管，具有光子晶体结构及其制造方法
公开(公告)号：US07663153B2
公开(公告)日：2010-02-16
申请号：US12011304
申请日：2008-01-25
申请人： Chen-Yang Huang , Hao-Min Ku , Shiuh Chao , Chu-Li Chao , Rong Xuan
发明人： Chen-Yang Huang , Hao-Min Ku , Shiuh Chao , Chu-Li Chao , Rong Xuan
IPC分类号： H01L31/00
CPC分类号： H01L33/12 , H01L33/10 , H01L33/22 , H01L33/46 , H01L2933/0083
摘要： A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.
摘要翻译：提供了一种发光二极管（LED）。 LED至少包括基板，锯齿多层，第一类型半导体层，有源发射层和第二类型半导体层。在LED中，通过自动克隆光子晶体工艺，在第一类半导体层下面的有源发射层的相对侧形成锯齿多层。由于在LED的基板上存在锯齿多层，可以通过锯齿多层的反射和再循环来再次形成有源发射层的背面的散射光。因此，所有的光被聚焦以向前辐射，以便提高LED的光提取效率。此外，由于锯齿多层具有释放热应力并且减小其与基板之间的弹性变形的性能，所以锯齿多层不会在任何高温处理之后剥离或破裂。

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