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1. 发明授权

US09651542B2 Micro-devices for disease detection 有权
公开(公告)号：US09651542B2
公开(公告)日：2017-05-16
申请号：US14006805
申请日：2012-01-27
申请人： Chris Chang Yu , Xuedong Du
发明人： Chris Chang Yu , Xuedong Du
IPC分类号： G01N33/551 , G01N33/50 , G01N35/08 , A61B5/145 , B01L3/00
CPC分类号： G01N33/5005 , A61B5/145 , A61B2562/028 , B01L3/502707 , B01L3/502761 , B01L2200/0652 , B01L2200/0663 , B01L2200/0668 , B01L2300/0627 , B01L2300/0645 , B01L2300/0864 , B01L2400/0415 , B01L2400/043 , B01L2400/0487 , G01N35/08
摘要： Among others, the present invention provides micro-devices for detecting or treating a disease, each comprising a first micro sensor for detecting a property of the biological sample at the microscopic level, and an interior wall defining a channel, wherein the micro sensor is located in the interior wall of the micro-device and detects the property of the biological sample in the microscopic level, and the biological sample is transported within the channel.

2. 发明申请

US20090100764A1 Composition for removing photoresist layer and method for using it 有权
标题翻译：去除光致抗蚀剂层的组合物及其使用方法
公开(公告)号：US20090100764A1
公开(公告)日：2009-04-23
申请号：US11920247
申请日：2006-05-12
申请人： Shumin Wang , Chris Chang Yu
发明人： Shumin Wang , Chris Chang Yu
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： C09G1/02 , G03F7/423 , G03F7/425 , H01L21/02063
摘要： A composition for removing a photoresist layer and a method for using it are disclosed. The composition comprises a chemical portion which includes water and chemical constituents dissolving or softening the photoresist layer and a mechanical portion which is abrasive particles. Using the composition and the method according to the present invention can decrease the conventional two steps of removing a photoresist layer process to one step, thereby simplifying the procedure, shortening the removing time and reducing the cost. The chemical constituents in the composition according to the present invention are of low toxicity and flammability and the amount used is small, which makes it more friendly with the environment and decreases the expense of disposing the waste.
摘要翻译：公开了一种用于除去光致抗蚀剂层的组合物及其使用方法。组合物包括化学部分，其包括水和溶解或软化光致抗蚀剂层的化学成分和作为磨料颗粒的机械部分。使用根据本发明的组合物和方法可以将将光致抗蚀剂层处理去除一个步骤的常规两个步骤减少，从而简化了步骤，缩短了去除时间并降低了成本。根据本发明的组合物中的化学成分具有低毒性和易燃性，并且所用量小，这使得它对环境更加友好并且降低了废弃物的处理费用。

3. 发明授权

US07276442B2 Method for forming a metallization layer 有权
标题翻译：金属化层的形成方法
公开(公告)号：US07276442B2
公开(公告)日：2007-10-02
申请号：US10820291
申请日：2004-04-08
申请人： Gurtej Sandhu Sandhu , Chris Chang Yu
发明人： Gurtej Sandhu Sandhu , Chris Chang Yu
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/2885 , H01L21/76802 , H01L21/76838 , H01L21/76873 , H01L21/76877 , H01L21/76879 , H01L21/76885 , H01L2221/1078
摘要： A method for depositing metal on a semiconductor device having a substrate, an exposed first surface, and an exposed second surface is provided. Metal ions are deposited on the exposed first surface and on the exposed second layer by applying a first voltage between the substrate and an anode in the presence of an electrolytic bath, and metal ions are removed from the exposed first surface by applying a second voltage between the substrate and the anode in the presence of the electrolytic bath. Other aspects and embodiments are provided herein.
摘要翻译：提供了一种在具有基板，暴露的第一表面和暴露的第二表面的半导体器件上沉积金属的方法。金属离子通过在存在电解浴的情况下在衬底和阳极之间施加第一电压而沉积在暴露的第一表面和暴露的第二层上，并且通过在暴露的第一表面之间施加第二电压来从暴露的第一表面去除金属离子基板和阳极在电解槽的存在下。本文提供了其它方面和实施例。

4. 发明授权

US06171952B2 Methods of forming metallization layers and integrated circuits containing such 有权
标题翻译：形成金属化层的方法和包含这种金属化层的集成电路
公开(公告)号：US06171952B2
公开(公告)日：2001-01-09
申请号：US09517684
申请日：2000-03-02
申请人： Gurtej Sandhu Sandhu , Chris Chang Yu
发明人： Gurtej Sandhu Sandhu , Chris Chang Yu
IPC分类号： H01L214763
CPC分类号： H01L21/76873 , H01L21/2885 , H01L21/76838 , H01L21/76841 , H01L21/76843 , H01L21/76865 , H01L21/76877 , H01L21/76879 , H01L2224/05572 , H01L2924/0002 , H01L2924/00014 , H01L2224/05552
摘要： A method for forming a metallization layer (30). A first layer (14) is formed outwardly from a semiconductor substrate (10). Contact vias (16) are formed through the first layer (14) to the semiconductor substrate (10). A second layer (20) is formed outwardly from the first layer (14). Portions of the second layer (20) are selectively removed such that the remaining portion of the second layer (20) defines the layout of the metallization layer (30) and the contact vias (16). The first and second layers (14) and (20) are electroplated by applying a bi-polar modulated voltage having a positive duty cycle and a negative duty cycle to the layers in a solution containing metal ions. The voltage and surface potentials are selected such that the metal ions are deposited on the remaining portions of the second layer (20). Further, metal ions deposited on the first layer (14) during a positive duty cycle are removed from the first layer (14) during a negative duty cycle. Finally, exposed portions of the first layer (14) are selectively removed.
摘要翻译：一种形成金属化层（30）的方法。第一层（14）从半导体衬底（10）向外形成。接触通孔（16）通过第一层（14）形成到半导体衬底（10）。第二层（20）从第一层（14）向外形成。选择性地去除第二层（20）的部分，使得第二层（20）的剩余部分限定金属化层（30）和接触通孔（16）的布局。通过在含有金属离子的溶液中的层上施加具有正占空比和负占空比的双极调制电压来对第一和第二层（14）和（20）进行电镀。选择电压和表面电位使得金属离子沉积在第二层（20）的剩余部分上。此外，在负占空比期间，在正占空比期间沉积在第一层（14）上的金属离子从第一层（14）去除。最后，选择性地去除第一层（14）的暴露部分。

5. 发明授权

US6143123A Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers 有权
公开(公告)号：US6143123A
公开(公告)日：2000-11-07
申请号：US235227
申请日：1999-01-22
申请人： Karl M. Robinson , Chris Chang Yu
发明人： Karl M. Robinson , Chris Chang Yu
IPC分类号： B24B37/013 , B24B49/16 , B24B1/00
CPC分类号： B24B37/013 , B24B49/16 , Y10S156/93 , Y10S156/934 , Y10S438/959 , Y10T156/11 , Y10T156/19
摘要： An apparatus and method for uniformly planarizing a surface of a semiconductor wafer and accurately stopping CMP processing at a desired endpoint. In one embodiment, a planarizing machine has a platen mounted to a support structure, an underpad attached to the platen, a polishing pad attached to the underpad, and a wafer carrier assembly. The wafer carrier assembly has a chuck with a mounting cavity in which the wafer may be mounted, and the wafer carrier assembly moves the chuck to engage a front face of the wafer with the planarizing surface of the polishing pad. The chuck and/or the platen moves with respect to the other to impart relative motion between the wafer and the polishing pad. The planarizing machine also includes a pressure sensor positioned to measure the pressure at an area of the wafer as the platen and the chuck move with respect to each other and while the wafer engages the planarizing surface of the polishing pad. The pressure sensor generates a signal in response to the measured pressure that corresponds to a planarizing parameter of the wafer. In a preferred embodiment, the planarizing machine further includes a converter operatively connected to the pressure sensor, a controller operatively connected to the converter, and a plurality of drivers operatively connected to the controller and positioned in the mounting cavity.

6. 发明授权

US5662788A Method for forming a metallization layer 失效
标题翻译：金属化层的形成方法
公开(公告)号：US5662788A
公开(公告)日：1997-09-02
申请号：US656712
申请日：1996-06-03
申请人： Gurtej Sandhu Sandhu , Chris Chang Yu
发明人： Gurtej Sandhu Sandhu , Chris Chang Yu
IPC分类号： H01L21/288 , H01L21/768 , H01L21/445
CPC分类号： H01L21/76873 , H01L21/2885 , H01L21/76838 , H01L21/76841 , H01L21/76843 , H01L21/76865 , H01L21/76877 , H01L21/76879 , H01L2224/05572 , H01L2924/0002
摘要： A method for forming a metallization layer (30). A first layer (14) is formed outwardly from a semiconductor substrate (10). Contact vias (16) are formed through the first layer (14) to the semiconductor substrate (10). A second layer (20) is formed outwardly from the first layer (14). Portions of the second layer (20) are selectively removed such that the remaining portion of the second layer (20) defines the layout of the metallization layer (30) and the contact vias (16). The first and second layers (14) and (20) are electroplated by applying a bi-polar modulated voltage having a positive duty cycle and a negative duty cycle to the layers in a solution containing metal ions. The voltage and surface potentials are selected such that the metal ions are deposited on the remaining portions of the second layer (20). Further, metal ions deposited on the first layer (14) during a positive duty cycle are removed from the first layer (14) during a negative duty cycle. Finally, exposed portions of the first layer (14) are selectively removed.
摘要翻译：一种形成金属化层（30）的方法。第一层（14）从半导体衬底（10）向外形成。接触通孔（16）通过第一层（14）形成到半导体衬底（10）。第二层（20）从第一层（14）向外形成。选择性地去除第二层（20）的部分，使得第二层（20）的剩余部分限定金属化层（30）和接触通孔（16）的布局。通过在含有金属离子的溶液中的层上施加具有正占空比和负占空比的双极调制电压来对第一和第二层（14）和（20）进行电镀。选择电压和表面电位使得金属离子沉积在第二层（20）的剩余部分上。此外，在负占空比期间，在正占空比期间沉积在第一层（14）上的金属离子从第一层（14）去除。最后，选择性地去除第一层（14）的暴露部分。

7. 发明申请

US20090095320A1 Composition for Removing Photresist Layer and Method for Using it 审中-公开
标题翻译：去除光阻层的组成及其使用方法
公开(公告)号：US20090095320A1
公开(公告)日：2009-04-16
申请号：US11920248
申请日：2006-05-12
申请人： Shumin Wang , Chris Chang Yu
发明人： Shumin Wang , Chris Chang Yu
IPC分类号： B08B3/08 , G03F7/42 , B08B3/12 , B08B1/04
CPC分类号： G03F7/423
摘要： A new composition for removing a photoresist layer and a method for using the same are disclosed. The composition comprises a polar solvent and an oxidant. The composition according to the present invention comprises chemical substances with less toxicity and flammability at lower contents, which makes it more friendly to environment and decreases the expense for disposing the chemical waste. The method for using the composition shortens the time for cleaning and removes the residue more completely, thereby enhancing the electrical conductivity.
摘要翻译：公开了一种用于除去光致抗蚀剂层的新组合物及其使用方法。该组合物包含极性溶剂和氧化剂。根据本发明的组合物包含毒性较小且易燃性低的化学物质，使其对环境更加友好，并降低处理化学废物的费用。使用该组合物的方法缩短了清洗时间，更完全地除去残留物，从而提高导电性。

8. 发明授权

US06633084B1 Semiconductor wafer for improved chemical-mechanical polishing over large area features 失效
标题翻译：用于改善大面积特征的化学机械抛光的半导体晶圆
公开(公告)号：US06633084B1
公开(公告)日：2003-10-14
申请号：US09439734
申请日：1999-11-12
申请人： Gurtej Singh Sandhu , Chris Chang Yu
发明人： Gurtej Singh Sandhu , Chris Chang Yu
IPC分类号： H01L2348
CPC分类号： B24B37/04 , Y10S438/941 , Y10S438/975
摘要： The present invention is a semiconductor wafer, and a method of fabricating the semiconductor wafer, that reduces dishing over large area features in chemical-mechanical polishing processes. The semiconductor wafer has a substrate with an upper surface, a large area feature formed on the substrate, and a separation layer deposited on the substrate. The separation layer has a top surface and a cavity extending from the top surface towards the upper surface of the substrate. The large area feature is positioned in the cavity of the separation layer, and a support pillar is positioned in the cavity. In one embodiment, the pillar has a base positioned between components of the large area feature and a crown positioned proximate to a plane defined by the top surface of the separation layer. In operation, the pillar substantially prevents the polishing pad of a polishing machine from penetrating into the cavity beyond the top surface of the separation layer.
摘要翻译：本发明是一种半导体晶片，以及一种制造半导体晶片的方法，其减少化学机械抛光工艺中的大面积特征的凹陷。半导体晶片具有上表面的基板，在基板上形成的大面积特征以及沉积在基板上的分离层。分离层具有顶表面和从顶表面朝向衬底的上表面延伸的空腔。大面积特征定位在分离层的空腔中，并且支撑柱定位在空腔中。在一个实施例中，柱具有位于大面积特征的部件之间的基部和靠近由分离层的顶表面限定的平面定位的冠部。在操作中，支柱基本上防止抛光机的抛光垫穿透超过分离层的顶表面的空腔。

9. 发明申请

US20140017670A1 MICRO-DEVICES FOR DISEASE DETECTION 有权
标题翻译：用于疾病检测的微型装置
公开(公告)号：US20140017670A1
公开(公告)日：2014-01-16
申请号：US14006805
申请日：2012-01-27
申请人： Chris Chang Yu , Xuedong Du
发明人： Chris Chang Yu , Xuedong Du
IPC分类号： G01N33/50
CPC分类号： G01N33/5005 , A61B5/145 , A61B2562/028 , B01L3/502707 , B01L3/502761 , B01L2200/0652 , B01L2200/0663 , B01L2200/0668 , B01L2300/0627 , B01L2300/0645 , B01L2300/0864 , B01L2400/0415 , B01L2400/043 , B01L2400/0487 , G01N35/08
摘要： Among others, the present invention provides micro-devices for detecting or treating a disease, each comprising a first micro sensor for detecting a property of the biological sample at the microscopic level, and an interior wall defining a channel, wherein the micro sensor is located in the interior wall of the micro-device and detects the property of the biological sample in the microscopic level, and the biological sample is transported within the channel.
摘要翻译：其中，本发明提供了用于检测或治疗疾病的微器件，每个微器件包括用于检测微观层面上的生物样品的性质的第一微传感器和限定通道的内壁，其中微传感器位于在微器件的内壁中，并且在微观水平上检测生物样品的性质，并且生物样品在通道内传输。

10. 发明授权

US07126195B1 Method for forming a metallization layer 有权
标题翻译：金属化层的形成方法
公开(公告)号：US07126195B1
公开(公告)日：2006-10-24
申请号：US09652619
申请日：2000-08-31
申请人： Gurtej Singh Sandhu , Chris Chang Yu
发明人： Gurtej Singh Sandhu , Chris Chang Yu
IPC分类号： H01L29/76
CPC分类号： H01L21/76843 , H01L21/2885 , H01L21/76802 , H01L21/76838 , H01L21/76873 , H01L21/76877 , H01L21/76879 , H01L21/76885 , H01L2221/1078
摘要： A method for forming a metallization layer (30). A first layer (14) is formed outwardly from a semiconductor substrate (10). Contact vias (16) are formed through the first layer (14) to the semiconductor substrate (10). A second layer (20) is formed outwardly from the first layer (14). Portions of the second layer (20) are selectively removed such that the remaining portion of the second layer (20) defines the layout of the metallization layer (30) and the contact vias (16). The first and second layers (14) and (20) are electroplated by applying a bi-polar modulated voltage having a positive duty cycle and a negative duty cycle to the layers in a solution containing metal ions. The voltage and surface potentials are selected such that the metal ions are deposited on the remaining portions of the second layer (20). Further, metal ions deposited on the first layer (14) during a positive duty cycle are removed from the first layer (14) during a negative duty cycle. Finally, exposed portions of the first layer (14) are selectively removed.
摘要翻译：一种形成金属化层（30）的方法。第一层（14）从半导体衬底（10）向外形成。接触通孔（16）通过第一层（14）形成到半导体衬底（10）。第二层（20）从第一层（14）向外形成。选择性地去除第二层（20）的部分，使得第二层（20）的剩余部分限定金属化层（30）和接触通孔（16）的布局。通过在含有金属离子的溶液中的层上施加具有正占空比和负占空比的双极调制电压来对第一和第二层（14）和（20）进行电镀。选择电压和表面电位使得金属离子沉积在第二层（20）的剩余部分上。此外，在负占空比期间，在正占空比期间沉积在第一层（14）上的金属离子从第一层（14）去除。最后，选择性地去除第一层（14）的暴露部分。

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