会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Strain engineering—HDP thin film with tensile stress for FEOL and other applications
    • 应变工程 - 具有拉伸应力的HDP薄膜,用于FEOL等应用
    • US07381451B1
    • 2008-06-03
    • US10991890
    • 2004-11-17
    • Chi-i LangRatsamee LimdulpaiboonCayetano Gonzalez
    • Chi-i LangRatsamee LimdulpaiboonCayetano Gonzalez
    • H05H1/24B05D3/02H05H1/02
    • C23C16/402C23C16/56H01J37/3244H01L21/84H01L27/1203H01L29/7846
    • High density plasma (HDP) techniques form high tensile stress silicon oxide films. The HDP techniques use low enough temperatures to deposit high tensile stress silicon oxide films in transistor architectures and fabrication processes effective for generating channel strain without adversely impacting transistor integrity. Methods involve a two phase process: a HDP deposition phase, wherein silanol groups are formed in the silicon oxide film, and a bond reconstruction phase, wherein water is removed and tensile stress is induced in the silicon oxide film. Transistor strain can be generated in NMOS or PMOS devices using strategic placement of the high tensile stress silicon oxide. Example applications include high tensile stress silicon oxides for use in shallow trench isolation structures, pre-metal dielectric layer and silicon on insulator substrates.
    • 高密度等离子体(HDP)技术形成高拉伸应力氧化硅膜。 HDP技术使用足够低的温度在晶体管架构和制造工艺中沉积高拉伸应力氧化硅膜,这有效地用于产生通道应变而不会不利地影响晶体管的完整性。 方法涉及两相工艺:HDP沉积相,其中在氧化硅膜中形成硅烷醇基团,以及键合重构阶段,其中除去水并在氧化硅膜中引发拉伸应力。 晶体管应变可以在NMOS或PMOS器件中使用高拉伸应力氧化硅的策略放置来产生。 示例性应用包括用于浅沟槽隔离结构,预金属介电层和绝缘体上硅衬底的高拉伸应力氧化硅。