专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20170092842A1 STRAINED VOLTAGE-CONTROLLED MAGNETIC MEMORY ELEMENTS AND DEVICES 审中-公开
公开(公告)号：US20170092842A1
公开(公告)日：2017-03-30
申请号：US15250457
申请日：2016-08-29
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , CALIFORNIA STATE UNIVERSITY, NORTHRIDGE
发明人： Pedram Khalili Amiri , Qi Hu , Kang L. Wang , Nicholas Kioussis , Phuong-Vu Ong
IPC分类号： H01L43/02 , H01L43/10 , H01L27/22 , H01L43/08
CPC分类号： H01L27/224 , G11C11/161 , H01L43/08
摘要： A magnetic memory bit structure using voltage-controlled magnetic anisotropy (VCMA) for switching the state of at least one magnetic free layer (FL) is configured for inducing strain to achieve very large VCMA coefficients, toward reducing the electric field potential and/or voltage required for switching the state of the magnetic free layer (FL). The disclosed apparatus and method increases voltage-controlled magnetic anisotropy (VCMA) efficiency, which is the change of interfacial magnetic anisotropy energy per unit electric field, thus exploiting strain engineering in designing next generation MeRAM devices which operate more efficiently with lower switching thresholds.

2. 发明申请

US20220326214A1 Devices for Single-Molecule Sequencing, Including Related Methods and Processes 有权
公开(公告)号：US20220326214A1
公开(公告)日：2022-10-13
申请号：US17176371
申请日：2021-02-16
申请人： The California State University - Northridge
发明人： Hendrik Postma
IPC分类号： G01N33/487 , C12Q1/6869 , G01N27/327
摘要： Processes for conductive material nanogap formation have been developed that include: providing a base material, wherein the base material is either solid or comprises a micropore that extends through the first layered material, and wherein the micropore comprises a top opening, a bottom opening, and a volume boundary, applying a conductive material sheet to the first layered material, wherein the conductive material sheet covers the top opening of the micropore, applying two conducting electrodes to the conductive material sheet, so that each one of the conducting electrodes is positioned on either side of the micropore, applying an etch mask that covers at least a part of the conductive material sheet, the top opening of the micropore (if present), or a combination thereof, applying a passivation layer over at least the etch mask, fabricating a hole in the passivation layer directly above the top opening of the micropore, and applying at least one voltage pulse through the at least one conducting electrode to create a nanogap in the conductive material sheet, wherein the nanogap is over and open to the top opening of the micropore. In some embodiments, the micropore and the nanogap are fabricated simultaneously.

3. 发明申请

US20160043307A1 CONCEPTS FOR IMPROVED MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：改进磁性随机存取存储器的概念
公开(公告)号：US20160043307A1
公开(公告)日：2016-02-11
申请号：US14818075
申请日：2015-08-04
申请人： California State University Northridge
发明人： Nicholas Kioussis , Julian Velev , Alan Kalitsov , Artur Useinov
IPC分类号： H01L43/10 , H01L43/08 , G11C11/16 , H01L43/02
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1675 , G11C11/22 , G11C11/2275 , G11C11/5607 , G11C11/5657 , G11C2213/71 , H01L43/08
摘要： The present invention relates to magnetic random access memory (MRAM) storage devices based on multiferroic tunnel junctions in which ferroelectric polarization is used to control and manipulate the memory state. Invention methods include: (1) method of producing tunneling electroresistance (TER) effect in multiferroic tunnel junction (MFTJ) at finite bias; (2) method of controlling the TER effect in an MFTJ at infinite bias via the switching of the relative orientation of the ferromagnetic leads; (3) method of producing monotonous bias dependence of the tunneling magnetoresistance (TMR) in a MFTJ; (4) method of controlling the size and direction of the parallel spin transfer torque (STT) component and the perpendicular STT component across the MFTJ; (5) method of producing a monotonous bias dependence of the perpendicular STT component across an MFTJ; and (6) method of controlling the size and sign of the interlayer exchange coupling in an MFTJ. The invented products are any electric-field-controlled spin transfer torque magnetoresistive memory element based on a multiferoic tunnel junction (MTFJ) with magnetic electrodes and a simple or composite ferroelectric barrier embodying any of the claimed 6 methods.
摘要翻译：本发明涉及基于多铁路隧道结的磁性随机存取存储器（MRAM）存储装置，其中使用铁电极化来控制和操纵存储器状态。发明方法包括：（1）在有限偏差下在多铁路隧道结（MFTJ）中产生隧道电阻（TER）效应的方法; （2）通过切换铁磁引线的相对取向，在无限偏压下控制MFTJ中的TER效应的方法; （3）在MFTJ中产生隧道磁阻（TMR）的单调偏置依赖性的方法; （4）控制MFTJ上的平行自旋转移转矩（STT）分量和垂直STT分量的大小和方向的方法; （5）跨越MFTJ产生垂直STT分量的单调偏差依赖性的方法; 和（6）在MFTJ中控制层间交换耦合的尺寸和符号的方法。本发明的产品是基于具有磁极的多空间隧道结（MTFJ）和体现任何所要求的方法的简单或复合铁电屏障的任何电场控制的自旋转移转矩磁阻存储元件。

4. 发明授权

US12085558B2 Devices for single-molecule sequencing, including related methods and processes 有权
公开(公告)号：US12085558B2
公开(公告)日：2024-09-10
申请号：US17176371
申请日：2021-02-16
申请人： The California State University—Northridge
发明人： Hendrik Postma
IPC分类号： G01N33/487 , B82Y15/00 , C12Q1/6869 , G01N27/327
CPC分类号： G01N33/48721 , C12Q1/6869 , G01N27/3278 , B82Y15/00
摘要： Processes for conductive material nanogap formation have been developed that include: providing a base material, wherein the base material is either solid or comprises a micropore that extends through the first layered material, and wherein the micropore comprises a top opening, a bottom opening, and a volume boundary, applying a conductive material sheet to the first layered material, wherein the conductive material sheet covers the top opening of the micropore, applying two conducting electrodes to the conductive material sheet, so that each one of the conducting electrodes is positioned on either side of the micropore, applying an etch mask that covers at least a part of the conductive material sheet, the top opening of the micropore (if present), or a combination thereof, applying a passivation layer over at least the etch mask, fabricating a hole in the passivation layer directly above the top opening of the micropore, and applying at least one voltage pulse through the at least one conducting electrode to create a nanogap in the conductive material sheet, wherein the nanogap is over and open to the top opening of the micropore. In some embodiments, the micropore and the nanogap are fabricated simultaneously.

5. 发明申请

US20210138444A1 Longer-Lived Ruthenium Olefin Metathesis Catalysts Supported by Hemi-Labile Carbene Ligands 有权
公开(公告)号：US20210138444A1
公开(公告)日：2021-05-13
申请号：US17096001
申请日：2020-11-12
申请人： The California State University - Northridge
发明人： Yann Schrodi , Nicolas Cena , Joseph Yoon
IPC分类号： B01J31/22 , C07F15/00 , C07D233/22 , C08G61/08 , C07C6/04 , C07C67/293
摘要： Contemplated subject matter disclosed herein relates generally to organometallic olefin metathesis catalysts, and more particularly to longer-lived olefin metathesis catalysts supported by hemi-labile carbene ligands that bear an arm with one or more donor ligands, as well as the use of such catalysts in metathesis reactions of olefins and olefin compounds. The contemplated subject matter has utility in the fields of catalysis, organic synthesis, polymer chemistry, and industrial and fine chemicals chemistry. This contemplated subject matter serves to reduce the cost of olefin metathesis (OM) processes including in olefin metathesis polymerizations, conversion of vegetable oils into chemicals, and processes in the petrochemical industry. This contemplated subject matter reduces the cost of OM processes by providing OM catalysts that are longer-lived and lead to higher turnover numbers, hence requiring less catalyst to convert a given amount of substrate(s). Considering that the OM catalyst is the most expensive part of some OM processes, longer-lived OM catalysts have the benefit of reducing the overall cost of the OM processes.

6. 发明申请

US20190332247A1 Integration of User Emotions for a Smartphone or Other Communication Device Environment 审中-公开
公开(公告)号：US20190332247A1
公开(公告)日：2019-10-31
申请号：US16398656
申请日：2019-04-30
申请人： The California State University, Northridge
发明人： Li Liu , Dragos Guta
IPC分类号： G06F3/0481 , G06F3/0482 , G06F3/01
摘要： Methods of real-time emoji and emoticon production are disclosed that include: determining, by a computing device, at least one first emotional state of a user from information, wherein the at least one first emotional state is a presently-identified emotional state of the user; providing an emoji or emoticon production template system, wherein the template system includes at least one physical attribute of the user; and utilizing the emoji or emoticon production template system to: analyze the presently-identified emotional state of the user; determine a suitable map of the presently-identified state of the user; map the presently-identified state of the user on an emoji or emoticon production template; produce at least one unique emoji or emoticon based on the map; provide the at least one unique emoji or emoticon to the user, wherein the user selects the at least one unique emoji or emoticon and includes the at least one unique emoji or emoticon in a text message, a direct message, an electronic mail message, or a combination thereof.

7. 发明申请

US20190304652A1 Two-Dimensional Dirac Half-Metal Ferromagnets and Ferromagnetic Materials for Spintronic Devices 审中-公开
公开(公告)号：US20190304652A1
公开(公告)日：2019-10-03
申请号：US16288525
申请日：2019-02-28
申请人： The California State University - Northridge
发明人： Nicholas Kioussis , Qilong Sun
IPC分类号： H01F10/193 , H01F10/00 , C01G45/06
摘要： Ferromagnetic materials are disclosed that comprise at least one Dirac half metal material. In addition, Dirac half metal materials are disclosed, wherein the material comprises a plurality of massless Dirac electrons. In addition, ferromagnetic materials are disclosed that includes at least one Dirac half metal material, wherein the material comprises a plurality of massless Dirac electrons, wherein the material exhibits 100% spin polarization, and wherein the plurality of electrons exhibit ultrahigh mobility. Spintronic devices and heterostructures are also disclosed that include a Dirac half metal material.

8. 发明申请

US20190216751A1 Compositions and Methods for the Treatment and Prevention of Cancer 审中-公开
公开(公告)号：US20190216751A1
公开(公告)日：2019-07-18
申请号：US16188821
申请日：2018-11-13
申请人： California State University Northridge
发明人： Jonathan A Kelber , Yvess Adamian , Lindsay Kutscher , Robert Guth , Cameron Geller
IPC分类号： A61K31/155 , A61K31/422 , A61K31/517 , A61K31/17 , A61K31/437 , A61K31/166 , A61K31/343 , A61K31/5377 , A61K31/506 , A61P35/00
CPC分类号： A61K31/155 , A61K31/132 , A61K31/166 , A61K31/17 , A61K31/343 , A61K31/422 , A61K31/437 , A61K31/506 , A61K31/517 , A61K31/5377 , A61K45/06 , A61P35/00 , A61P35/04 , A61K2300/00
摘要： A method of treating a subject with cancer is provided. The method includes administering to a subject in need thereof an effective amount of a pharmaceutical composition that includes inhibitors of HDAC6 and/or sirtuins and an inhibitor of deoxyhypusine synthase (DHPS). Methods also include treating a subject with cancer by administering to a subject in need thereof an effective amount of a pharmaceutical composition comprising at least one inhibitor of sirtuin and at least one inhibitor of histone deacetylase six (HDAC6); at least one inhibitor of sirtuin or at least one inhibitor of histone deacetylase six (HDAC6), or a combination thereof. Additional methods include treating a subject with cancer by administering to a subject in need thereof an effective amount of a pharmaceutical composition comprising at least one inhibitor of sirtuin, an inhibitor of deoxyhypusine synthase (DHPS), and at least one inhibitor of histone deacetylase six (HDAC6); at least one inhibitor of sirtuin, an inhibitor of deoxyhypusine synthase (DHPS), or at least one inhibitor of histone deacetylase six (HDAC6), or a combination thereof.

9. 发明授权

US11573679B2 Integration of user emotions for a smartphone or other communication device environment 有权
公开(公告)号：US11573679B2
公开(公告)日：2023-02-07
申请号：US16398656
申请日：2019-04-30
申请人： The California State University, Northridge
发明人： Li Liu , Dragos Guta
IPC分类号： G06F3/0482 , G06F3/04817 , G06F3/01
摘要： Methods of real-time emoji and emoticon production are disclosed that include: determining, by a computing device, at least one first emotional state of a user from information, wherein the at least one first emotional state is a presently-identified emotional state of the user; providing an emoji or emoticon production template system, wherein the template system includes at least one physical attribute of the user; and utilizing the emoji or emoticon production template system to: analyze the presently-identified emotional state of the user; determine a suitable map of the presently-identified state of the user; map the presently-identified state of the user on an emoji or emoticon production template; produce at least one unique emoji or emoticon based on the map; provide the at least one unique emoji or emoticon to the user, wherein the user selects the at least one unique emoji or emoticon and includes the at least one unique emoji or emoticon in a text message, a direct message, an electronic mail message, or a combination thereof.

10. 发明授权

US11495381B2 Two-dimensional Dirac half-metal ferromagnets and ferromagnetic materials for spintronic devices 有权
公开(公告)号：US11495381B2
公开(公告)日：2022-11-08
申请号：US16288525
申请日：2019-02-28
申请人： The California State University—Northridge
发明人： Nicholas Kioussis , Qilong Sun
IPC分类号： H01F10/193 , H01F10/00 , C01G45/06 , B82Y25/00 , H01L43/10
摘要： Ferromagnetic materials are disclosed that comprise at least one Dirac half metal material. In addition, Dirac half metal materials are disclosed, wherein the material comprises a plurality of massless Dirac electrons. In addition, ferromagnetic materials are disclosed that includes at least one Dirac half metal material, wherein the material comprises a plurality of massless Dirac electrons, wherein the material exhibits 100% spin polarization, and wherein the plurality of electrons exhibit ultrahigh mobility. Spintronic devices and heterostructures are also disclosed that include a Dirac half metal material.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式