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1. 发明授权

US08217447B2 Flash memory device with a plurality of source plates 有权
标题翻译：具有多个源极板的闪存器件
公开(公告)号：US08217447B2
公开(公告)日：2012-07-10
申请号：US12633616
申请日：2009-12-08
申请人： Cheon-Man Shim
发明人： Cheon-Man Shim
IPC分类号： H01L29/792
CPC分类号： H01L27/0207 , H01L27/11565
摘要： A flash memory device and a method of manufacturing a flash memory device. A flash memory device may include an isolation layer and/or an active area over a semiconductor substrate, a memory gate formed over an active area, a control gate formed over a semiconductor substrate including a memory gate, and/or a common source line contact formed over a semiconductor substrate including a control gate. A flash memory device may include a source plate having substantially the same interval as an interval of an active area of a bit line. A source plate may include an active area in which a common source line contact may be formed. A common source line contact may include a long butting contact extending in a direction traversing an active area.
摘要翻译：一种闪速存储器件和一种制造闪速存储器件的方法。闪存器件可以包括半导体衬底上的隔离层和/或有源区，在有源区上形成的存储栅，在包括存储栅的半导体衬底上形成的控制栅，和/或公共源极线接触形成在包括控制栅极的半导体衬底上。闪存器件可以包括源极板，其具有与位线的有效区域的间隔大致相同的间隔。源极板可以包括其中可以形成公共源极线接触的有源区域。公共源极线接触件可以包括在穿过有源区域的方向上延伸的长对接触点。

2. 发明申请

US20090085218A1 FLASH MEMORY DEVICE AND FABRICATING METHOD THEREOF 失效
标题翻译：闪存存储器件及其制造方法
公开(公告)号：US20090085218A1
公开(公告)日：2009-04-02
申请号：US12235889
申请日：2008-09-23
申请人： Cheon Man SHIM
发明人： Cheon Man SHIM
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/53295 , H01L24/05 , H01L24/45 , H01L2224/05001 , H01L2224/05093 , H01L2224/05624 , H01L2224/45147 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01082 , H01L2924/30105 , H01L2224/48824 , H01L2924/00 , H01L2224/48
摘要： A flash memory device may include a first insulating layer on a base insulating layer on a substrate, a lower wire layer that fills a trench in the first insulating layer, a first insulating interlayer and a second insulating layer stacked in sequence on the first insulating layer and the lower wire layer, a middle wire layer that fills a trench in the second insulating layer, and a second insulating interlayer and an upper wire layer stacked in sequence on the middle wire layer, wherein the lower wire layer. The middle wire layer and the upper wire layer may be electrically connected to each other and the first insulating layer may include a low-k layer in contact with the base insulating layer. In addition, each of the first insulating interlayer, the second insulating layer, and the second insulating interlayer may include an FSG layer.
摘要翻译：闪存器件可以包括在基底上的基底绝缘层上的第一绝缘层，填充第一绝缘层中的沟槽的下线层，在第一绝缘层上依次层叠的第一绝缘层和第二绝缘层下层导线层，填充第二绝缘层中的沟槽的中间线层，以及依次层叠在中间线层上的第二绝缘层和上层层，其中，下部导线层。中间线层和上部线层可以彼此电连接，并且第一绝缘层可以包括与基底绝缘层接触的低k层。此外，第一绝缘中间层，第二绝缘层和第二绝缘中间层中的每一个可以包括FSG层。

3. 发明授权

US07488681B2 Method for fabricating Al metal line 有权
标题翻译：制造铝金属线的方法
公开(公告)号：US07488681B2
公开(公告)日：2009-02-10
申请号：US11504827
申请日：2006-08-14
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L21/4763
CPC分类号： H01L21/76856 , H01L21/32051
摘要： Disclosed is a method for fabricating an Al metal line. The method includes forming an insulating layer on a semiconductor substrate; forming a Ti layer, a bottom TiN layer, an Al layer and a top TiN layer in successive order on the insulating layer; plasma-treating the top TiN layer; forming a photoresist pattern on the plasma-treated top TiN layer; and etching the plasma-treated top TiN layer, the Al layer, the bottom TiN layer, and the Ti layer using the photoresist pattern as an etching mask, thereby forming the Al metal line.
摘要翻译：公开了一种制造铝金属线的方法。该方法包括在半导体衬底上形成绝缘层; 在绝缘层上依次形成Ti层，TiN层，Al层和TiN层，等离子体处理顶部TiN层; 在等离子体处理的顶部TiN层上形成光致抗蚀剂图案; 并使用光致抗蚀剂图案作为蚀刻掩模蚀刻等离子体处理的顶部TiN层，Al层，底部TiN层和Ti层，从而形成Al金属线。

4. 发明申请

US20080073791A1 WIRE PAD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的线束
公开(公告)号：US20080073791A1
公开(公告)日：2008-03-27
申请号：US11853547
申请日：2007-09-11
申请人： Cheon-Man Shim
发明人： Cheon-Man Shim
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L24/05 , H01L23/53295 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/85399 , H01L2224/859 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/15153 , H01L2924/15165 , H01L2224/45099 , H01L2924/00
摘要： A semiconductor device includes a low-k layer formed over a semiconductor device; a first TEOS film formed over the low-k layer; a SiCN layer formed over the first TEOS film; an undoped silicate glass film formed over the SiCN layer; a nitride film formed over the USG film; a second TEOS film formed over the nitride film; a first metal interconnect extending from the low-k layer to the undoped silicate glass film; and a second metal interconnect extending from the nitride film to the second TEOS film, wherein the first metal interconnect and the second metal interconnect are electrically connected and a wire is bonded to the second metal interconnect.
摘要翻译：半导体器件包括在半导体器件上形成的低k层; 在低k层上形成的第一个TEOS膜; 形成在第一TEOS膜上的SiCN层; 形成在SiCN层上的未掺杂的硅酸盐玻璃膜; 形成在USG膜上的氮化物膜; 形成在氮化物膜上的第二TEOS膜; 从低k层延伸到未掺杂的硅酸盐玻璃膜的第一金属互连; 以及从所述氮化物膜延伸到所述第二TEOS膜的第二金属互连件，其中所述第一金属互连件和所述第二金属互连件电连接并且引线被接合到所述第二金属互连件。

5. 发明申请

US20080054480A1 Semiconductor device and fabricating method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080054480A1
公开(公告)日：2008-03-06
申请号：US11895338
申请日：2007-08-24
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L23/48 , H01L21/20
CPC分类号： H01L23/5283 , H01L21/76819 , H01L21/76829 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a lower layer having an uneven region on a top surface, a dielectric barrier layer disposed on the lower layer and having an even top surface, and an interlayer dielectric layer disposed on the dielectric barrier layer and having an even top surface.
摘要翻译：半导体器件包括在顶表面上具有不平坦区域的下层，设置在下层上并具有均匀顶面的电介质阻挡层和设置在电介质阻挡层上并具有均匀顶面的层间介电层。

6. 发明申请

US20080054471A1 Semiconductor Device and Fabricating Method Thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080054471A1
公开(公告)日：2008-03-06
申请号：US11846689
申请日：2007-08-29
申请人： CHEON MAN SHIM , Sang Chul Kim
发明人： CHEON MAN SHIM , Sang Chul Kim
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L23/5222 , H01L21/7682 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an embodiment includes a first metal wiring formed on a semiconductor substrate; a first dielectric barrier layer formed on the first metal wiring; an inter-layer dielectric (ILD) layer formed on the first dielectric barrier layer; a plurality of second metal wirings formed on the ILD layer; and at least one hole formed in the ILD layer in regions between second metal wirings.
摘要翻译：根据实施例的半导体器件包括形成在半导体衬底上的第一金属布线; 形成在所述第一金属布线上的第一电介质阻挡层; 形成在所述第一介电阻挡层上的层间介电层（ILD）层; 形成在ILD层上的多个第二金属布线; 以及在第二金属布线之间的区域中形成在ILD层中的至少一个孔。

7. 发明授权

US07883928B2 Image sensor and fabricating method thereof 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07883928B2
公开(公告)日：2011-02-08
申请号：US11858306
申请日：2007-09-20
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14627
摘要： An image sensor and fabricating method thereof are provided. The image sensor can include a color filter on a semiconductor substrate, a microlens on the color filter layer, and a carbon-doped low temperature oxide layer on the microlens.
摘要翻译：提供了一种图像传感器及其制造方法。图像传感器可以包括半导体衬底上的滤色器，滤色器层上的微透镜，以及微透镜上的碳掺杂低温氧化物层。

8. 发明授权

US07858488B2 Method of forming a device isolation film of a semiconductor device 有权
标题翻译：形成半导体器件的器件隔离膜的方法
公开(公告)号：US07858488B2
公开(公告)日：2010-12-28
申请号：US11872178
申请日：2007-10-15
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method of forming a device isolation film for a semiconductor device comprising forming a trench on a silicon semiconductor substrate, rounding an upper corner of the trench using an in-situ plasma method, filling the trench by forming an insulating layer over the silicon semiconductor substrate, and forming a shallow trench isolation area by performing a planarization process on the insulating layer so as to expose the silicon semiconductor substrate.
摘要翻译：一种形成用于半导体器件的器件隔离膜的方法，包括在硅半导体衬底上形成沟槽，使用原位等离子体方法对沟槽的上角进行四舍五入，通过在硅半导体衬底上形成绝缘层来填充沟槽并且通过对绝缘层进行平坦化处理来形成浅沟槽隔离区域，以暴露硅半导体衬底。

9. 发明申请

US20100163969A1 FLASH MEMORY DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：闪存存储器件及其制造方法相同
公开(公告)号：US20100163969A1
公开(公告)日：2010-07-01
申请号：US12633616
申请日：2009-12-08
申请人： Cheon-Man Shim
发明人： Cheon-Man Shim
IPC分类号： H01L27/115 , H01L21/8246
CPC分类号： H01L27/0207 , H01L27/11565
摘要： A flash memory device and a method of manufacturing a flash memory device. A flash memory device may include an isolation layer and/or an active area over a semiconductor substrate, a memory gate formed over an active area, a control gate formed over a semiconductor substrate including a memory gate, and/or a common source line contact formed over a semiconductor substrate including a control gate. A flash memory device may include a source plate having substantially the same interval as an interval of an active area of a bit line. A source plate may include an active area in which a common source line contact may be formed. A common source line contact may include a long butting contact extending in a direction traversing an active area.
摘要翻译：一种闪速存储器件和一种制造闪速存储器件的方法。闪存器件可以包括半导体衬底上的隔离层和/或有源区，在有源区上形成的存储栅，在包括存储栅的半导体衬底上形成的控制栅，和/或公共源极线接触形成在包括控制栅极的半导体衬底上。闪存器件可以包括源极板，其具有与位线的有效区域的间隔大致相同的间隔。源极板可以包括其中可以形成公共源极线接触的有源区域。公共源极线接触件可以包括在穿过有源区域的方向上延伸的长对接触点。

10. 发明授权

US07646049B2 Image sensor and fabricating method thereof 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07646049B2
公开(公告)日：2010-01-12
申请号：US11844714
申请日：2007-08-24
申请人： Cheon-Man Shim
发明人： Cheon-Man Shim
IPC分类号： H01L31/062
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/1463 , H01L27/14685 , H01L27/14687
摘要： An image sensor includes a photo diode formed over a semiconductor substrate. At least one IMD layer is formed on the semiconductor substrate. A dielectric medium fills a through-hole formed in the IMD layer over the photo diode. The dielectric medium may be made with materials with a higher refractive index than the materials forming the IMD layer.
摘要翻译：图像传感器包括形成在半导体衬底上的光电二极管。在半导体衬底上形成至少一个IMD层。电介质填充在光电二极管上形成的IMD层中的通孔。电介质可以由具有比形成IMD层的材料更高的折射率的材料制成。

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