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1. 发明申请

US20200340098A1 STORAGE AND DELIVERY OF ANTIMONY-CONTAINING MATERIALS TO AN ION IMPLANTER 审中-公开
公开(公告)号：US20200340098A1
公开(公告)日：2020-10-29
申请号：US16871605
申请日：2020-05-11
申请人： Aaron Reinicker , Ashwini K Sinha , Douglas C. Heiderman
发明人： Aaron Reinicker , Ashwini K Sinha , Douglas C. Heiderman
IPC分类号： C23C14/14 , C23C14/48 , B01B1/00
摘要： A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.

2. 发明授权

US10597773B2 Antimony-containing materials for ion implantation 有权
公开(公告)号：US10597773B2
公开(公告)日：2020-03-24
申请号：US16106197
申请日：2018-08-21
申请人： Aaron Reinicker , Ashwini K Sinha , Douglas C Heiderman
发明人： Aaron Reinicker , Ashwini K Sinha , Douglas C Heiderman
IPC分类号： C23C14/48 , H01J37/08 , H01J37/317 , C23C14/14 , H01J37/32 , H01L21/265
摘要： A novel method, composition and system for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture.

3. 发明申请

US20170294289A1 BORON COMPOSITIONS SUITABLE FOR ION IMPLANTATION TO PRODUCE A BORON-CONTAINING ION BEAM CURRENT 审中-公开
公开(公告)号：US20170294289A1
公开(公告)日：2017-10-12
申请号：US15483479
申请日：2017-04-10
申请人： Aaron Reinicker , Ashwini K Sinha
发明人： Aaron Reinicker , Ashwini K Sinha
IPC分类号： H01J37/317 , C23C14/48 , H01J37/08
CPC分类号： H01L21/265 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/31701
摘要： The present invention relates to an improved composition for ion implantation. A dopant source comprising BF3 and an assistant species comprising Si2H6wherein the assistant species in combination with the dopant gas produces a boron-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.

4. 发明申请

US20140357069A1 ALUMINUM DOPANT COMPOSITIONS, DELIVERY PACKAGE AND METHOD OF USE 有权
标题翻译：铝合金组合物，输送包装和使用方法
公开(公告)号：US20140357069A1
公开(公告)日：2014-12-04
申请号：US14287840
申请日：2014-05-27
申请人： Ashwini K. Sinha , Lloyd A. Brown
发明人： Ashwini K. Sinha , Lloyd A. Brown
IPC分类号： H01L21/265 , H01L21/67
CPC分类号： H01L21/265 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01L21/67017 , Y10T137/86348 , Y10T137/88054
摘要： A novel method and system for using aluminum dopant compositions is provided. A composition of the aluminum dopant compositions is selected with sufficient vapor pressure and minimal carbon content, thereby enabling ease of delivery to an ion implant process and substantial reduction of carbon deposition during Al ion implantation. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the Al ion implantation process.
摘要翻译：提供了一种使用铝掺杂剂组合物的新方法和系统。选择铝掺杂剂组合物的组合物具有足够的蒸汽压力和最小的碳含量，从而使得能够容易地输送到离子注入工艺，并且在Al离子注入期间显着降低碳沉积。源材料优选地从次大气压储存和输送装置储存和递送，以在Al离子注入工艺期间提高安全性和可靠性。

5. 发明申请

US20140322902A1 METHODS FOR USING ISOTOPICALLY ENRICHED LEVELS OF DOPANT GAS COMPOSITIONS IN AN ION IMPLANTATION PROCESS 有权
标题翻译：在离子植入过程中使用同位素浓度多种气体组合物的方法
公开(公告)号：US20140322902A1
公开(公告)日：2014-10-30
申请号：US13869456
申请日：2013-04-24
申请人： Ashwini K. Sinha , Ching I. Li
发明人： Ashwini K. Sinha , Ching I. Li
IPC分类号： H01L21/265 , H01J27/02
CPC分类号： H01J27/02 , H01J37/302 , H01J37/3171 , H01J2237/006 , H01J2237/08 , H01L21/26506 , H01L21/2658
摘要： A novel process for using enriched and highly enriched dopant gases is provided herein that eliminates the problems currently encountered by end-users from being able to realize the process benefits associated with ion implanting such dopant gases. For a given flow rate within a prescribed range, operating at a reduced total power level of the ion source is designed to reduce the ionization efficiency of the enriched dopant gas compared to that of its corresponding non-enriched or lesser enriched dopant gas. The temperature of the source filament is also reduced, thereby mitigating the adverse effects of fluorine etching and ion source shorting when a fluorine-containing enriched dopant gas is utilized. The reduced levels of total power in combination with a lower ionization efficiency and lower ion source temperature can interact synergistically to improve and extend ion source life, while beneficially maintaining a beam current that does not unacceptably deviate from previously qualified levels.
摘要翻译：本文提供了一种使用富集和高度富集的掺杂气体的新方法，其消除了终端用户目前遇到的问题，即能够实现与离子注入这种掺杂气体相关的工艺优点。对于规定范围内的给定流速，在离子源的总功率水平降低的情况下操作，以减少富集的掺杂气体与其相应的非富集或较小浓度的掺杂气体相比的离子化效率。源极丝的温度也降低，从而在使用富含氟的掺杂气体时减轻氟蚀刻和离子源短路的不利影响。总功率的降低水平与较低的离子化效率和较低的离子源温度相结合可以相互协调地相互作用，以改善和延长离子源寿命，同时有利地保持不能接受地偏离先前合格水平的束流。

6. 发明申请

US20220363540A1 METHOD FOR PRETREATING AND RECOVERING A RARE GAS FROM A GAS CONTAMINANT STREAM EXITING AN ETCH CHAMBER 有权
公开(公告)号：US20220363540A1
公开(公告)日：2022-11-17
申请号：US17552869
申请日：2021-12-16
申请人： Jennifer Bugayong Luna , Atul M. Athalye , Ce Ma , Ashwini K. Sinha
发明人： Jennifer Bugayong Luna , Atul M. Athalye , Ce Ma , Ashwini K. Sinha
IPC分类号： C01B23/00 , B01D53/00 , B01D53/14 , B01D53/04
摘要： Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

7. 发明授权

US10564656B2 Gas delivery valve and methods of use thereof 有权
公开(公告)号：US10564656B2
公开(公告)日：2020-02-18
申请号：US15838492
申请日：2017-12-12
申请人： Douglas C Heiderman , Ashwini K Sinha , Michael McBearty , John Piscitelli
发明人： Douglas C Heiderman , Ashwini K Sinha , Michael McBearty , John Piscitelli
IPC分类号： G05D16/02 , F16K17/30 , G05D16/06
摘要： A novel and improved inventive valve with a regulating function is provided that is capable of filling to higher fill pressures than previously attainable with conventional C-10 “on-off” valves. The valve contains a single flow passageway by which gas dispenses and enters the valve. A fill adapter is specially configured to engage the valve to allow filling at the higher pressures along the single flow passageway. The structure of the valve allows greater utilization of cylinder capacity; simplifies filling and dispensing with the single flow passageway; and allows for regulating gas pressure during delivery without increasing the overall size of the cylinder package.

8. 发明申请

US20200013621A1 METHODS FOR INCREASING BEAM CURRENT IN ION IMPLANTATION 审中-公开
公开(公告)号：US20200013621A1
公开(公告)日：2020-01-09
申请号：US16519180
申请日：2019-07-23
申请人： Aaron Reinicker , Ashwini K Sinha
发明人： Aaron Reinicker , Ashwini K Sinha
IPC分类号： H01L21/265 , C23C14/48 , H01J37/08 , H01J37/317
摘要： The present invention relates to an improved method for increasing a beam current as part of an ion implantation process. The method comprises introducing a dopant source and an assistant species into an ion implanter. A plasma of ions is formed and then extracted from the ion implanter. Non-carbon target ionic species are separated to produce a beam current that is higher in comparison to that generated solely from the dopant source.

9. 发明申请

US20190186694A1 MOBILE SUPPORT ASSEMBLY FOR HOLDING AND TRANSPORTING A CONTAINER 审中-公开
公开(公告)号：US20190186694A1
公开(公告)日：2019-06-20
申请号：US16213142
申请日：2018-12-07
申请人： Mayank Pareek , Ashwini K. Sinha , Stanley M. Smith , Ranko Bursac , Amber L. Boll , Merry Riehm-Constantino , Amy Beth Hangen , Fred A. Marconi, JR.
发明人： Mayank Pareek , Ashwini K. Sinha , Stanley M. Smith , Ranko Bursac , Amber L. Boll , Merry Riehm-Constantino , Amy Beth Hangen , Fred A. Marconi, JR.
IPC分类号： F17C7/04 , C23C16/458
CPC分类号： F17C7/04 , C23C16/4581 , F17C1/00 , F17C2260/00
摘要： A mobile storage apparatus for containers is provided. The apparatus provides a unique support assembly for holding a container. The assembly includes a latch mechanism that allows a clamp of cylinder to be moved from a closed position to an open position which creates clearance around a neck of cylinder to allow it to rotate without falling out of clamp. The other end of apparatus is structurally configured with a release plunger that can be retracted to allow rotation of cylinder along said other end. Rotatable wheels on a user side with a braking mechanism along a handle and a foot ledge allow improved maneuverability and stability.

10. 发明申请

US20190185988A1 STORAGE AND DELIVERY OF ANTIMONY-CONTAINING MATERIALS TO AN ION IMPLANTER 审中-公开
公开(公告)号：US20190185988A1
公开(公告)日：2019-06-20
申请号：US16283027
申请日：2019-02-22
申请人： Aaron Reinicker , Ashwini K. Sinha , Douglas C. Heiderman
发明人： Aaron Reinicker , Ashwini K. Sinha , Douglas C. Heiderman
IPC分类号： C23C14/48 , H01J37/317 , H01J37/32 , H01L21/265 , C23C14/14 , H01J37/08
摘要： A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.

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