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    • 1. 发明申请
    • Apparatus and method for high-throughput chemical vapor deposition
    • 高通量化学气相沉积的装置和方法
    • US20080096369A1
    • 2008-04-24
    • US11573325
    • 2005-07-01
    • Piotr StrzyzewskiPeter BaumannMarcus SchumacherJohannes LindnerAntonio Meequilda Kusters
    • Piotr StrzyzewskiPeter BaumannMarcus SchumacherJohannes LindnerAntonio Meequilda Kusters
    • H01L21/36C23C16/00
    • C23C16/458B05C3/18B05D1/36C23C16/45551
    • The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11′, 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11′) into which different gas feed lines (24, 24′) run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.
    • 本发明涉及一种用于将至少一个特别薄的层沉积在至少一个基底(9)上的装置。 所述装置包括容纳在反应器壳体(2)中并包括承载至少一个基板(9)的可移动基座(20)的处理室(1,20,11,11',40,21)。 多个气体供给管线(24)进入所述处理室并且供给包括涂层成分的不同工艺气体。 所述工艺气体可以在随后的工艺步骤中进料到处理室,从而将涂层形成组分沉积到衬底(9)上。 为了增加所述方法的生产量,处理室设置有多个分离的沉积室(11,11'),不同的气体供给管线(24,24')运行到其中,从而供给单独的气体组成。 基板(9)可以通过移动基座(20)并沉积不同的层或层部件而一个接一个地馈送到所述腔室。