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1. 发明授权

US07666323B2 System and method for increasing the emissivity of a material 有权
标题翻译：提高材料发射率的系统和方法
公开(公告)号：US07666323B2
公开(公告)日：2010-02-23
申请号：US10920589
申请日：2004-08-18
申请人： Vadim Boguslavskiy , Alexander Gurary
发明人： Vadim Boguslavskiy , Alexander Gurary
IPC分类号： C23F1/00
CPC分类号： C23F1/26 , C21D7/06 , C21D2261/00 , C22F1/18 , F28F13/18 , F28F2245/06
摘要： A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.
摘要翻译：公开了用于增加固体材料的辐射率的系统和方法，其中首先将材料的表面机械加工以产生微观级缺陷，然后蚀刻以产生深的微粗糙表面形态。以这种方式，当这些改性材料用于加热元件时，可以获得更高的效率和更低的能量消耗。因此，当改进的加热元件与各种加热装置一起使用时，根据该方法制造的加热元件在较低的温度下工作，寿命更长。

2. 发明授权

US5336324A Apparatus for depositing a coating on a substrate 失效
标题翻译：用于在基底上沉积涂层的装置
公开(公告)号：US5336324A
公开(公告)日：1994-08-09
申请号：US803647
申请日：1991-12-04
申请人： Richard A. Stall , Gary S. Tompa , Alexander Gurary , Craig R. Nelson
发明人： Richard A. Stall , Gary S. Tompa , Alexander Gurary , Craig R. Nelson
IPC分类号： C23C14/24 , C23C16/44 , C23C16/455 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45512 , C23C14/243 , C23C16/4551 , C23C16/45591 , C30B25/14
摘要： An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.
摘要翻译：用于在衬底上沉积涂层的装置基本上通过产生加热的曲折路径来消除椭圆形缺陷的发生，通过该曲折路径，源材料蒸气必须在沉积在衬底之前必须行进。此外，用于每个源材料的截止阀位于反应室中紧邻基板，从而使不同组成的层能够在相邻层之间沉积有明显的过渡。该装置可以用于有效地涂覆大面积均匀，并且与元素或化学源材料或两者的某些组合一样良好地工作。涂覆装置的特征可以体现在用于在常规分子束和化学束外延单元中进行改装的替换源电池中。

3. 发明申请

US20120272892A1 Metal-Organic Vapor Phase Epitaxy System and Process 审中-公开
标题翻译：金属有机气相外延系统与工艺
公开(公告)号：US20120272892A1
公开(公告)日：2012-11-01
申请号：US13441531
申请日：2012-04-06
申请人： Ajit Paranjpe , Alexander Gurary , William Quinn
发明人： Ajit Paranjpe , Alexander Gurary , William Quinn
IPC分类号： C30B25/14 , C30B25/16 , C30B25/10 , C30B25/02 , C30B25/08 , C30B25/12
CPC分类号： C30B25/14 , C30B25/10 , C30B25/12 , C30B35/00
摘要： A VPE reactor is improved by providing temperature control to within 0.5° C., and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation.
摘要翻译：通过提供温度控制在0.5℃以内，通过新型的反应器成型，独特的晶片运动结构，热控制系统的改进，气流结构的改进，改进的气体应用方法和温度和改进的控制系统，用于检测和减少过程变化。

4. 发明申请

US20120058630A1 Linear Cluster Deposition System 审中-公开
标题翻译：线性簇沉积系统
公开(公告)号：US20120058630A1
公开(公告)日：2012-03-08
申请号：US12877775
申请日：2010-09-08
申请人： William E. Quinn , Alexander Gurary , Ajit Paranjpe , Maria D. Ferreira , Roger P. Fremgen, JR. , Eric A. Armour
发明人： William E. Quinn , Alexander Gurary , Ajit Paranjpe , Maria D. Ferreira , Roger P. Fremgen, JR. , Eric A. Armour
IPC分类号： H01L21/36 , C23C16/06 , C23C16/08 , C23C16/00 , C23C16/44
摘要： A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers.
摘要翻译：线性簇沉积系统包括以线性水平布置定位的多个反应室。第一和第二反应气体歧管连接到每个反应室的相应工艺气体输入口。具有多个排气输入的废气歧管与多个反应室中的每一个的废气输出端口连接。基板输送车辆将基板和基板载体中的至少一个输送到每个反应室的基板输送口中并至少支撑至少一个基板。选择每个反应室的工艺气体进入工艺气体输入口的流量和每个反应室中的压力中的至少一个，使得工艺条件在至少两个反应室中基本相同。

5. 发明申请

US20060171442A1 Calibration wafer and method of calibrating in situ temperatures 失效
标题翻译：校准晶圆和校准原位温度的方法
公开(公告)号：US20060171442A1
公开(公告)日：2006-08-03
申请号：US11046741
申请日：2005-01-31
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
IPC分类号： G01K13/00 , G01K15/00 , G01K1/08
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译：提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。

6. 发明授权

US07275861B2 Calibration wafer and method of calibrating in situ temperatures 失效
标题翻译：校准晶圆和校准原位温度的方法
公开(公告)号：US07275861B2
公开(公告)日：2007-10-02
申请号：US11046741
申请日：2005-01-31
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
IPC分类号： G01K15/00 , G01J5/00
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译：提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。

7. 发明申请

US20050274374A1 System and method for increasing the emissivity of a material 有权
标题翻译：提高材料发射率的系统和方法
公开(公告)号：US20050274374A1
公开(公告)日：2005-12-15
申请号：US10920589
申请日：2004-08-18
申请人： Vadim Boguslavskiy , Alexander Gurary
发明人： Vadim Boguslavskiy , Alexander Gurary
IPC分类号： F24C3/04
CPC分类号： C23F1/26 , C21D7/06 , C21D2261/00 , C22F1/18 , F28F13/18 , F28F2245/06
摘要： A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.
摘要翻译：公开了用于增加固体材料的辐射率的系统和方法，其中首先将材料的表面机械加工以产生微观级缺陷，然后蚀刻以产生深的微粗糙表面形态。以这种方式，当这些改性材料用于加热元件时，可以获得更高的效率和更低的能量消耗。因此，当改进的加热元件与各种加热装置一起使用时，根据该方法制造的加热元件在较低的温度下工作，寿命更长。

8. 发明授权

US06902623B2 Reactor having a movable shutter 有权
标题翻译：反应器具有活动快门
公开(公告)号：US06902623B2
公开(公告)日：2005-06-07
申请号：US10046426
申请日：2002-01-16
申请人： Alexander Gurary , Scott Elman , Keng Moy , Vadim Boguslavskiy
发明人： Alexander Gurary , Scott Elman , Keng Moy , Vadim Boguslavskiy
IPC分类号： B65G49/07 , C23C16/44 , C30B25/08 , C30B25/10 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/336 , H01L21/67 , H01L21/673 , H01L21/677 , H01L21/77 , H01L21/84 , H01L29/786 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4411 , C23C16/4401 , C30B25/08 , C30B25/10 , H01L21/2026 , H01L21/67109 , H01L21/67126 , H01L21/67373 , H01L21/67379 , H01L21/67772 , H01L21/67775 , H01L27/1218 , H01L27/1274 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675
摘要： A reactor for growing epitaxial layers includes reaction chamber having a passthrough opening for inserting and removing wafer carriers from the reaction chamber. A reactor also includes a cylindrical shutter located inside the reaction chamber for selectively closing the passthrough opening. The cylindrical shutter is movable between a first position for closing the passthrough opening and a second position for opening the passthrough opening. The cylindrical shutter includes an internal cavity adapted to receive a cooling fluid and tubing for introducing the cooling fluid into the internal cavity. The tubing is permanently secured to the shutter and moves simultaneously therewith. The cylindrical shutter and the internal cavity of the shutter surrounds an outer perimeter of the wafer carrier, thereby minimizing nonuniformity in the temperature and flow field characteristics of the reactant gases.
摘要翻译：用于生长外延层的反应器包括具有用于从反应室插入和移除晶片载体的穿通开口的反应室。反应器还包括位于反应室内部的用于选择性地关闭通式开口的圆柱形开闭器。圆柱形快门可以在用于关闭穿通开口的第一位置和用于打开穿通开口的第二位置之间移动。圆柱形闸门包括适于接收冷却流体的内腔和用于将冷却流体引入内腔的管道。管道永久地固定在闸门上并同时移动。圆柱形闸门和闸门的内腔围绕晶片载体的外周，从而最小化反应气体的温度和流场特性的不均匀性。

9. 发明授权

US06492625B1 Apparatus and method for controlling temperature uniformity of substrates 有权
标题翻译：用于控制基板温度均匀性的装置和方法
公开(公告)号：US06492625B1
公开(公告)日：2002-12-10
申请号：US09671527
申请日：2000-09-27
申请人： Vadim Boguslavskiy , Alexander Gurary , Ameesh Patel , Jeffrey Ramer
发明人： Vadim Boguslavskiy , Alexander Gurary , Ameesh Patel , Jeffrey Ramer
IPC分类号： H05B102
CPC分类号： G01J5/0022 , C23C16/46 , C23C16/52 , H01L21/67248 , H01L21/68764 , H01L21/68771
摘要： An apparatus and method for providing substantially uniform substrate temperature in a chemical vapor deposition reaction chamber is provided. The method and apparatus utilize a carrier for holding at least one substrate in the reaction chamber and a plurality of heating elements arranged to heat the carrier and the at least one substrate. At least one substrate pyrometer measures the temperature of the substrates to provide a signal representing the process temperature. This signal is used in a feedback loop to control one or more of the heating elements. At least two carrier pyrometers focused at different zones of the carrier are provided. The signals from the carrier pyrometers are compared to one another to provide an indication of temperature non-uniformity. This indication is used in a separate feedback loop to adjust other heating elements so as to maintain temperature uniformity across the carrier.
摘要翻译：提供了一种用于在化学气相沉积反应室中提供基本均匀的衬底温度的装置和方法。该方法和装置利用载体将至少一个基板保持在反应室中，以及布置成加热载体和至少一个基板的多个加热元件。至少一个基板高温计测量基板的温度以提供表示工艺温度的信号。该信号用于反馈回路中以控制一个或多个加热元件。提供聚焦在载体的不同区域的至少两个载体高温计。将来自载体高温计的信号彼此比较以提供温度不均匀性的指示。该指示用于单独的反馈回路以调整其他加热元件，以便保持载体上的温度均匀性。

10. 发明授权

US06349270B1 Method and apparatus for measuring the temperature of objects on a fast moving holder 有权
标题翻译：用于测量快速移动支架上物体温度的方法和装置
公开(公告)号：US06349270B1
公开(公告)日：2002-02-19
申请号：US09321356
申请日：1999-05-27
申请人： Alexander Gurary , Vadim Boguslavskiy , Ameesh N. Patel , Jeffrey C. Ramer
发明人： Alexander Gurary , Vadim Boguslavskiy , Ameesh N. Patel , Jeffrey C. Ramer
IPC分类号： G01K1130
CPC分类号： G01J5/0022 , G05D23/1917 , G05D23/26
摘要： Apparatus and method for determining a real time, non-contact temperature measurement of semiconductor wafers is provided in a computer-based data gathering system. The apparatus includes a moving carrier containing semiconductor wafers and a pyrometer and a reflectometer positioned above the spinning wafer carrier for providing temperature and reflectivity data samples taken from the semiconductor wafers and spinning carrier. The data are then provided to an attached computer. The attached computer receives the reflectivity and temperature data pairs, stores them in a data table and records the frequency of occurrence of each of the reflectivity values in the series of reflectivity and temperature data. Software operating on the computer has instructions for identifying at least one reflectivity data peak representative of the reflectivity characteristics of the semiconductor wafers and instructions for determining the temperature of the semiconductor wafers based upon the frequency of occurrence of the reflectivity data and the associated reflectivity-temperature data.
摘要翻译：在基于计算机的数据采集系统中提供了用于确定半导体晶片的实时非接触温度测量的装置和方法。该装置包括含有半导体晶片的移动载体和位于旋转晶片载体上方的高温计和反射计，用于提供从半导体晶片和纺丝载体获取的温度和反射率数据样本。然后将数据提供给附接的计算机。连接的计算机接收反射率和温度数据对，将它们存储在数据表中，并将每个反射率值的出现频率记录在一系列反射率和温度数据中。在计算机上操作的软件具有用于识别表示半导体晶片的反射率特性的至少一个反射率数据峰值的指令以及基于反射率数据的发生频率和相关联的反射率温度来确定半导体晶片的温度的指令数据。

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