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1. 发明申请

US20160289837A1 APPARATUS AND METHOD FOR FORMING THIN PROTECTIVE AND OPTICAL LAYERS ON SUBSTRATES 审中-公开
标题翻译：在基板上形成薄层保护层和光学层的装置和方法
公开(公告)号：US20160289837A1
公开(公告)日：2016-10-06
申请号：US15169988
申请日：2016-06-01
申请人： Aixtron, Inc.
发明人： Stephen E. Savas , Carl Galewski , Hood Chatham , Sai Mantripragada , Allan Wiesnoski , Sooyun Joh
IPC分类号： C23C16/509 , H01J37/32 , C23C16/458
CPC分类号： C23C16/509 , C23C16/458 , C23C16/545 , G02B1/105 , G02B1/14 , G02B1/18 , H01J37/32036 , H01J37/32568 , H01J2237/332 , H01L21/02126 , H01L21/0217 , H01L21/02274 , H01L51/5253
摘要： A method and apparatus are provided for plasma-based processing of a substrate based on a plasma source having at least two adjacent electrodes positioned with the long dimensions parallel to define a first minimum gap between the two electrodes of from 5 millimeters to 40 millimeters. A second minimum gap is defined between the two electrodes and the substrate. AC power is provided to the two electrodes through separate electrical circuits from a common supply with a phase difference therebetween. A first gas and a second gas are injected into the plasma-containing volume between the two electrodes at different positions relative to the substrate. A lower electrode with a lower electrode width that is less than the combined width of the two electrodes is powered from a separately controllable AC power supply at an AC frequency different from that supplied to the two electrodes.
摘要翻译：提供了一种用于基于等离子体源的基于等离子体处理基板的方法和装置，该等离子体源具有至少两个相邻的电极，所述至少两个相邻的电极以长尺寸平行地定位，以限定两个电极之间的从5毫米到40毫米的第一最小间隙。在两个电极和衬底之间限定第二最小间隙。通过分离的电路与两个电极之间的相位差从公共电源提供AC电力。将第一气体和第二气体相对于基板在不同位置处注入到两个电极之间的等离子体体积中。具有小于两个电极的组合宽度的较低电极宽度的下电极由独立可控的AC电源以与提供给两个电极的AC频率不同的AC频率供电。

2. 发明授权

US08906456B2 Apparatus and method for high-throughput chemical vapor deposition 有权
标题翻译：高通量化学气相沉积的装置和方法
公开(公告)号：US08906456B2
公开(公告)日：2014-12-09
申请号：US14038669
申请日：2013-09-26
申请人： Aixtron Inc.
发明人： Piotr Strzyzewski , Peter Baumann , Marcus Schumacher , Johannes Lindner , Antonio Mesquida Küsters
IPC分类号： C23C16/458 , C23C16/455 , B05C3/18 , B05D1/36
CPC分类号： C23C16/458 , B05C3/18 , B05D1/36 , C23C16/45551
摘要： A device for depositing at least one especially thin layer onto at least one substrate includes a process chamber housed in a reactor housing and includes a movable susceptor which carries the at least one substrate. A plurality of gas feed lines run into said process chamber and feed different process gases which comprise layer-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the layer-forming components onto the substrate. In order to increase throughput, the process chamber is provided with a plurality of separate deposition chambers into which different gas feed lines run, thereby feeding individual gas compositions. The substrate can be fed to said chambers one after the other by moving the susceptor and depositing different layers or layer components.
摘要翻译：用于将至少一个特别薄的层沉积到至少一个基底上的装置包括容纳在反应器壳体中并包括承载至少一个基底的可移动基座的处理室。多个气体供给管线进入所述处理室并且供给包含层形成部件的不同工艺气体。所述工艺气体可以在随后的工艺步骤中进料到处理室，从而将层形成组分沉积到衬底上。为了提高生产量，处理室设置有多个分离的沉积室，不同的气体进料管线运行到其中，从而供给单独的气体组成。通过移动基座并沉积不同的层或层组件，可以将衬底一个接一个地馈送到所述腔室。

3. 发明申请

US20150270109A1 METHODS FOR PLASMA PROCESSING 有权
标题翻译：等离子体处理方法
公开(公告)号：US20150270109A1
公开(公告)日：2015-09-24
申请号：US14735048
申请日：2015-06-09
申请人： Aixtron, Inc.
发明人： Stephen E. Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
IPC分类号： H01J37/32 , C23C16/34 , C23C16/505 , C23C16/24 , C23C16/503 , C23C16/40 , C23C16/50 , C23C16/44
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译：适用于半导体，导体或绝缘膜的沉积，蚀刻或处理的等离子体处理的装置和方法。等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。气体可以在电动电极附近注入，该电极分解并产生朝向衬底区域流动的活化物质。然后，该气体在动力电极和基底之间流入延伸的过程区域，以高速率与基底以高速率提供受控且连续的反应性，有效利用反应物原料。气体通过电源电极或电极和分配器之间的通道耗尽。

4. 发明申请

US20150155157A1 Method and Apparatus for Fabricating Dielectric Structures 有权
标题翻译：制造介质结构的方法和装置
公开(公告)号：US20150155157A1
公开(公告)日：2015-06-04
申请号：US14553436
申请日：2014-11-25
申请人： Aixtron, Inc.
发明人： Kay Song , Minghang Li , Brian Lu
IPC分类号： H01L21/02 , H01L29/06
CPC分类号： H01L21/28194 , C23C16/402 , C23C16/405 , C23C16/45529 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/02321 , H01L29/513 , H01L29/517
摘要： A composite dielectric structure having one or more Leakage Blocking Layers (LBL) interleaved with one or more Laminate Dielectric Layers (LDL), Alloy Dielectric Layers (ADL), or Co-deposit Dielectric Layers (CDL). Each LDL, ADL, and CDL includes dopants incorporated in a respective base dielectric layer (BDL); where LDLs are formed by incorporating a doping layer into a BDL using a laminate method, ADLs are formed by incorporating a dopant into a BDL using an alloying method; and CDLs are formed by pulsing a BDL base material and a dopant together using a co-deposit method.
摘要翻译：具有与一个或多个层压介电层（LDL），合金电介质层（ADL）或共沉积介电层（CDL）交错的一个或多个泄漏阻挡层（LBL）的复合电介质结构。每个LDL，ADL和CDL包括掺入各自的基底电介质层（BDL）中的掺杂剂; 其中通过使用层压法将掺杂层结合到BDL中形成LDL，通过使用合金法将掺杂剂掺入BDL中形成ADL; 并且通过使用共沉积法将BDL基材和掺杂剂一起脉冲形成CDL。

5. 发明授权

US09299956B2 Method for deposition of high-performance coatings and encapsulated electronic devices 有权
标题翻译：沉积高性能涂层和封装电子器件的方法
公开(公告)号：US09299956B2
公开(公告)日：2016-03-29
申请号：US13917313
申请日：2013-06-13
申请人： Aixtron, Inc.
发明人： Stephen E. Savas , Allan Wiesnoski , Hood Chatham , Carl Galewski
IPC分类号： H01L51/56 , H01L31/0203 , H01L51/52 , H01L31/0216 , H01L31/048
CPC分类号： H01L51/56 , H01L31/0203 , H01L31/02167 , H01L31/048 , H01L51/5256 , Y02E10/50
摘要： A method is disclosed for forming leak-free coatings on polymeric or other surfaces that provide optical functions or protect underlying layers from exposure to oxygen and water vapor and do not crack or peel in outdoor environments. This method may include both cleaning and surface modification steps preceding coating. The combined method greatly reduces defects in any barrier layer and provides weatherability of coatings. Specific commercial applications that benefit from this include manufacturing of photovoltaic devices or organic light emitting diode (OLED) devices including lighting and displays.
摘要翻译：公开了一种用于在聚合物或其它表面上形成无泄漏涂层的方法，其提供光学功能或保护下层不暴露于氧气和水蒸气，并且在户外环境中不会破裂或剥离。该方法可以包括涂覆之前的清洁和表面改性步骤。组合的方法大大减少了任何阻挡层的缺陷，并提供了涂层的耐候性。受益于此的具体商业应用包括制造包括照明和显示器在内的光伏器件或有机发光二极管（OLED）器件。

6. 发明授权

US09096932B2 Methods for plasma processing 有权
公开(公告)号：US09096932B2
公开(公告)日：2015-08-04
申请号：US14251851
申请日：2014-04-14
申请人： Aixtron, Inc.
发明人： Stephen E. Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
IPC分类号： H01J37/32 , C23C16/503 , C23C16/24 , C23C16/26 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/54 , H01L21/67
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.

7. 发明申请

US20140030434A1 APPARATUS AND METHOD FOR HIGH-THROUGHPUT CHEMICAL VAPOR DEPOSITION 有权
标题翻译：用于高通量化学气相沉积的装置和方法
公开(公告)号：US20140030434A1
公开(公告)日：2014-01-30
申请号：US14038669
申请日：2013-09-26
申请人： AIXTRON INC.
发明人： Piotr Strzyzewski , Peter Baumann , Marcus Schumacher , Johannes Lindner , Antonio Mesquida Küsters
IPC分类号： C23C16/458 , B05D1/36 , B05C3/18
CPC分类号： C23C16/458 , B05C3/18 , B05D1/36 , C23C16/45551
摘要： A device for depositing at least one especially thin layer onto at least one substrate includes a process chamber housed in a reactor housing and includes a movable susceptor which carries the at least one substrate. A plurality of gas feed lines run into said process chamber and feed different process gases which comprise layer-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the layer-forming components onto the substrate. In order to increase throughput, the process chamber is provided with a plurality of separate deposition chambers into which different gas feed lines run, thereby feeding individual gas compositions. The substrate can be fed to said chambers one after the other by moving the susceptor and depositing different layers or layer components.
摘要翻译：用于将至少一个特别薄的层沉积到至少一个基底上的装置包括容纳在反应器壳体中并包括承载至少一个基底的可移动基座的处理室。多个气体供给管线进入所述处理室并且供给包含层形成部件的不同工艺气体。所述工艺气体可以在随后的工艺步骤中进料到处理室，从而将层形成组分沉积到衬底上。为了提高生产量，处理室设置有多个分离的沉积室，不同的气体进料管线运行到其中，从而供给单独的气体组成。通过移动基座并沉积不同的层或层组件，可以将衬底一个接一个地馈送到所述腔室。

8. 发明授权

US09564329B2 Method and apparatus for fabricating dielectric structures 有权
标题翻译：用于制造电介质结构的方法和装置
公开(公告)号：US09564329B2
公开(公告)日：2017-02-07
申请号：US14553436
申请日：2014-11-25
申请人： Aixtron, Inc.
发明人： Kay Song , Minghang Li , Brian Lu
IPC分类号： H01L21/02 , H01L21/28 , C23C16/40 , C23C16/455 , H01L29/51
CPC分类号： H01L21/28194 , C23C16/402 , C23C16/405 , C23C16/45529 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/02321 , H01L29/513 , H01L29/517
摘要： A composite dielectric structure having one or more Leakage Blocking Layers (LBL) interleaved with one or more Laminate Dielectric Layers (LDL), Alloy Dielectric Layers (ADL), or Co-deposit Dielectric Layers (CDL). Each LDL, ADL, and CDL includes dopants incorporated in a respective base dielectric layer (BDL); where LDLs are formed by incorporating a doping layer into a BDL using a laminate method, ADLs are formed by incorporating a dopant into a BDL using an alloying method; and CDLs are formed by pulsing a BDL base material and a dopant together using a co-deposit method.
摘要翻译：具有与一个或多个层压介电层（LDL），合金电介质层（ADL）或共沉积介电层（CDL）交错的一个或多个泄漏阻挡层（LBL）的复合电介质结构。每个LDL，ADL和CDL包括掺入各自的基底电介质层（BDL）中的掺杂剂; 其中通过使用层压法将掺杂层结合到BDL中形成LDL，通过使用合金法将掺杂剂掺入BDL中形成ADL; 并且通过使用共沉积法将BDL基材和掺杂剂一起脉冲形成CDL。

9. 发明授权

US09359674B2 Apparatus and method for dielectric deposition 有权
标题翻译：电介质沉积的设备和方法
公开(公告)号：US09359674B2
公开(公告)日：2016-06-07
申请号：US14321233
申请日：2014-07-01
申请人： Aixtron, Inc.
发明人： Stephen Edward Savas , Sai Mantripragada , Sooyun Joh , Allan B. Wiesnoski , Carl Galewski
IPC分类号： C23C16/503 , C23C16/455 , C23C16/509 , C23C16/54 , H01J37/32
CPC分类号： C23C16/503 , C23C16/45574 , C23C16/45578 , C23C16/509 , C23C16/54 , C23C16/545 , H01J37/32036 , H01J37/32532
摘要： The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.
摘要翻译：所公开的发明包括可以用于在非常低的缺陷密度的非常低的温度下在分离的或连续的纸幅基材上等离子体沉积薄层材料的装置和方法。通过控制气体组分的引入顺序，可以实现气相化学的优异控制。它还对气体中的化学过程速率和离子轰击的功率和能量的量具有实质上独立的控制。这种控制使得高质量的单层和多层薄膜能够在非常低的温度条件下成本有效且均匀地沉积在较大的区域上。

10. 发明授权

US09096933B2 Methods for plasma processing 有权
标题翻译：等离子体处理方法
公开(公告)号：US09096933B2
公开(公告)日：2015-08-04
申请号：US14253206
申请日：2014-04-15
申请人： Aixtron, Inc.
发明人： Stephen E. Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
IPC分类号： C23C16/503 , C23C16/24 , C23C16/26 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/54 , H01J37/32 , H01L21/67
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译：适用于半导体，导体或绝缘膜的沉积，蚀刻或处理的等离子体处理的装置和方法。等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。气体可以在电动电极附近注入，该电极分解并产生朝向衬底区域流动的活化物质。然后，该气体在动力电极和基底之间流入延伸的过程区域，以高速率与基底以高速率提供受控且连续的反应性，有效利用反应物原料。气体通过电源电极或电极和分配器之间的通道耗尽。

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