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    • 1. 发明授权
    • Solar cells and methods of fabrication thereof
    • 太阳能电池及其制造方法
    • US08241945B2
    • 2012-08-14
    • US12701908
    • 2010-02-08
    • Adam M. PayneDaniel L. MeierVinodh Chandrasekaran
    • Adam M. PayneDaniel L. MeierVinodh Chandrasekaran
    • H01L31/02
    • H01L31/0288H01L31/022425H01L31/068Y02E10/547
    • Solar cells and methods for fabrication thereof are provided. A method may include forming a via through at least one dielectric layer formed on a semiconductor wafer by using a laser to ablate a region of the at least one dielectric layer such that at least a portion of the surface of the semiconductor wafer is exposed by the via. The method may further include applying a self-doping metal paste to the via. The method may additionally include heating the semiconductor wafer and self-doping metal paste to a temperature sufficient to drive at least some dopant from the self-doping metal paste into the portion of the surface of the semiconductor wafer exposed by the via to form a selective emitter region and a contact overlying and self-aligned to the selective emitter region.
    • 提供太阳能电池及其制造方法。 一种方法可以包括通过使用激光来形成在半导体晶片上形成的至少一个电介质层来形成通孔,以消除至少一个电介质层的区域,使得半导体晶片的表面的至少一部分被 通过。 该方法可以进一步包括将自掺杂金属膏施加到通孔。 该方法可以另外包括将半导体晶片和自掺杂金属浆料加热到足以将至少一些掺杂剂从自掺杂金属浆料驱动到由通孔暴露的半导体晶片的表面的部分中以形成选择性的温度 发射极区域和与选择性发射极区域重叠并自对准的接触。
    • 4. 发明申请
    • SOLAR CELLS AND METHODS OF FABRICATION THEREOF
    • 太阳能电池及其制造方法
    • US20110132448A1
    • 2011-06-09
    • US12701908
    • 2010-02-08
    • Adam M. PayneDaniel L. MeierVinodh Chandrasekaran
    • Adam M. PayneDaniel L. MeierVinodh Chandrasekaran
    • H01L31/02
    • H01L31/0288H01L31/022425H01L31/068Y02E10/547
    • Solar cells and methods for fabrication thereof are provided. A method may include forming a via through at least one dielectric layer formed on a semiconductor wafer by using a laser to ablate a region of the at least one dielectric layer such that at least a portion of the surface of the semiconductor wafer is exposed by the via. The method may further include applying a self-doping metal paste to the via. The method may additionally include heating the semiconductor wafer and self-doping metal paste to a temperature sufficient to drive at least some dopant from the self-doping metal paste into the portion of the surface of the semiconductor wafer exposed by the via to form a selective emitter region and a contact overlying and self-aligned to the selective emitter region.
    • 提供太阳能电池及其制造方法。 一种方法可以包括通过使用激光来形成在半导体晶片上形成的至少一个电介质层的通孔来烧蚀所述至少一个电介质层的区域,使得半导体晶片的表面的至少一部分被 通过。 该方法可以进一步包括将自掺杂金属膏施加到通孔。 该方法可以另外包括将半导体晶片和自掺杂金属浆料加热到足以将至少一些掺杂剂从自掺杂金属浆料驱动到由通孔暴露的半导体晶片的表面的部分中以形成选择性的温度 发射极区域和与选择性发射极区域重叠并自对准的接触。
    • 5. 发明申请
    • SOLDERABLE INTERCONNECT APPARATUS FOR INTERCONNECTING SOLAR CELLS
    • 用于互连太阳能电池的可焊接互连装置
    • US20120279563A1
    • 2012-11-08
    • US13098817
    • 2011-05-02
    • Daniel MeierVijay YelundurVinodh ChandrasekaranAdam M. PayneSheri X. Wang
    • Daniel MeierVijay YelundurVinodh ChandrasekaranAdam M. PayneSheri X. Wang
    • H01L31/0224B23K1/20H01L31/18
    • H01L31/022425H01L31/0504Y02E10/50
    • Interconnect apparatus and methods for their manufacture are disclosed. An example method for forming a solderable connection to a conductive surface may include forming one or more solderable metal regions on the conductive surface, for example an aluminum surface. The method may comprise applying a solder layer to the one or more solderable metal regions to form one or more soldered metal regions. The method may further comprise depositing one or more solderable metal regions on the conductive surface by plasma deposition. In other examples, the one or more solderable metal regions may be sputtered. Additionally, the method may comprise applying a flux to the one or more solderable metal regions prior to applying the solder layer to the one or more solderable metal regions. An interconnect ribbon may be soldered to at least one of the solder layer or the solderable metal regions. Associated interconnect apparatus are also provided.
    • 公开了用于其制造的互连装置和方法。 用于形成与导电表面的可焊接连接的示例性方法可包括在导电表面上形成一个或多个可焊接金属区域,例如铝表面。 该方法可以包括将焊料层施加到一个或多个可焊接金属区域以形成一个或多个焊接金属区域。 该方法还可以包括通过等离子体沉积在导电表面上沉积一个或多个可焊接金属区域。 在其他示例中,可以溅射一个或多个可焊接金属区域。 另外,该方法可以包括在将焊料层施加到一个或多个可焊接金属区域之前向一个或多个可焊接金属区域施加通量。 互连带可以焊接到焊料层或可焊接金属区域中的至少一个。 还提供了相关联的互连装置。