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    • 2. 发明授权
    • Magnetically influenced current or voltage regulator and a magnetically influenced converter
    • 磁感应电流或电压调节器和受磁影响的转换器
    • US06933822B2
    • 2005-08-23
    • US10278908
    • 2002-10-24
    • Espen HaugsFrank Strand
    • Espen HaugsFrank Strand
    • G05F1/32H01F29/14H01F27/00
    • H01F29/14G05F1/32H01F2029/143Y10T29/4902
    • A magnetically influenced current or voltage regulator includes a body of an anisotropic magnetisable material that provides a closed magnetic circuit. A first electrical conductor is wound around the body along at least a part of the close circuit for at least one turn which forms a first main winding. At least one second electrical conductor is wound around the body along at least a part of the closed circuit for at least one turn which forms a control winding. The winding axis for the main winding is at right angles to the winding axis for the control winding. Orthogonal magnetic fields are generated in the body when the first main winding and the control winding are excited. A characteristic of the anisotropic magnetisable material relative to a field in the main winding is controlled by means of a field in the control winding.
    • 受磁影响的电流或电压调节器包括提供闭合磁路的各向异性可磁化材料的主体。 第一电导体沿着闭合电路的至少一部分缠绕在主体上至少一圈,形成第一主绕组。 至少一个第二电导体沿着闭合电路的至少一部分缠绕在主体上至少一圈,形成控制绕组。 主绕组的绕轴与控制绕组的绕线轴成直角。 当第一主绕组和控制绕组被激励时,在体内产生正交磁场。 通过控制绕组中的场来控制各向异性可磁化材料相对于主绕组中的场的特性。
    • 5. 发明授权
    • Systems and methods for voxel warping
    • 体素翘曲的系统和方法
    • US06867770B2
    • 2005-03-15
    • US10017703
    • 2001-12-14
    • Bradley A. Payne
    • Bradley A. Payne
    • G06T17/00G06T17/10G09G5/00G60T17/00
    • G06T17/00G06T17/10
    • Systems and methods for calculating a modification of a geometrical shape by applying an inverse modification function to an array representing the shape. An array representing the geometrical shape is defined on a multi-dimensional space. A modification function is used to modify the geometrical shape. A user or a programmed computer can select the modification function. The computer applies an inverse of the modification function to the array. The computer deduces a change in the geometrical shape from the modified array. An advantage of the system and method is the ability to compute shape changes in certain situations where a direct computation is cumbersome or otherwise inconvenient.
    • 通过对表示形状的阵列应用逆修正函数来计算几何形状的修改的系统和方法。 在多维空间上定义表示几何形状的数组。 修改函数用于修改几何形状。 用户或编程的计算机可以选择修改功能。 计算机将修改函数的反向应用于数组。 计算机从修改的数组中推导出几何形状的变化。 系统和方法的一个优点是在直接计算麻烦或其他不便的某些情况下计算形状变化的能力。
    • 6. 发明授权
    • Electrophoretic electronic displays with low-index films
    • 具有低折射率薄膜的电泳电子显示器
    • US06865010B2
    • 2005-03-08
    • US10319455
    • 2002-12-13
    • Gregg DuthalerAnthony Pullen
    • Gregg DuthalerAnthony Pullen
    • G02F1/1334G02F1/167G02B26/00
    • G02F1/167G02F1/1334
    • The invention features a reflective display device and a method of making a reflective display device that has reduced light loss and/or pixel cross talk due to internal reflection. The device includes a window layer, a plurality of reflective particles, a material portion disposed between the window layer and the plurality of reflective particles, and a refractive layer disposed between the window and the material portion. The plurality of reflective particles scatters light received from the ambient environment. The window layer has an index of refraction that is greater than an index of refraction of the ambient environment. The refractive layer has an index of refraction that is less than the index of refraction of the window layer and less than an index of refraction of the material portion.
    • 本发明的特征在于一种反射显示装置和一种制造反射显示装置的方法,该反射显示装置由于内部反射而具有减少的光损失和/或像素串扰。 该装置包括窗口层,多个反射粒子,设置在窗口层和多个反射粒子之间的材料部分和设置在窗口和材料部分之间的折射层。 多个反射粒子散射从周围环境接收的光。 窗口层具有大于周围环境的折射率的折射率。 折射层的折射率小于窗口层的折射率,并且小于材料部分的折射率。
    • 10. 发明授权
    • Buried-channel devices and substrates for fabrication of semiconductor-based devices
    • 用于制造基于半导体的器件的掩埋沟道器件和衬底
    • US06838728B2
    • 2005-01-04
    • US10216091
    • 2002-08-09
    • Anthony J. LochtefeldEugene A. Fitzgerald
    • Anthony J. LochtefeldEugene A. Fitzgerald
    • H01L21/337H01L29/10H01L29/165H01L29/80H01L23/48H01L23/52H01L29/40
    • H01L29/66916H01L29/1054H01L29/165H01L29/802H01L2924/0002H01L2924/00
    • Semiconductor-based devices, and methods for making the devices, involve a first device that includes a buried channel layer, a dielectric layer, and a compositionally graded spacer layer. The spacer layer includes a first material and a second material, and is located between the buried channel layer and the dielectric layer. A second device includes a buried channel layer, a relaxed surface layer, and a spacer layer located between the buried channel layer and the relaxed surface layer. The spacer layer has a composition that is different from a composition of the relaxed layer. The spacer layer and the relaxed surface layer each have bandgap offsets relative to the buried channel layer to reduce a parasitic channel conduction. A substrate for fabrication of devices, and methods for making the substrate, involves a substrate that includes a first layer, such as a silicon wafer, a substantially uniform second layer, and a graded-composition third layer.
    • 基于半导体的器件以及用于制造器件的方法包括第一器件,其包括掩埋沟道层,电介质层和组成分级的间隔层。 间隔层包括第一材料和第二材料,并且位于掩埋沟道层和介电层之间。 第二装置包括掩埋沟道层,松弛表面层和位于掩埋沟道层和松弛表面层之间的间隔层。 间隔层具有与松弛层的组成不同的组成。 间隔层和松弛表面层各自相对于掩埋沟道层具有带隙偏移,以减少寄生沟道传导。 用于制造器件的衬底以及用于制造衬底的方法包括:衬底,其包括第一层,例如硅晶片,基本均匀的第二层和渐变组成的第三层。