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    • 2. 发明授权
    • Nitride semiconductor light emitting device
    • 氮化物半导体发光器件
    • US07902561B2
    • 2011-03-08
    • US11722658
    • 2005-12-05
    • Suk Hun Lee
    • Suk Hun Lee
    • H01L33/04
    • H01L33/04B82Y20/00H01L33/06H01L33/32
    • The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.
    • 本发明涉及一种氮化物半导体发光器件,包括:具有AlGaN / n-GaN或AlGaN / GaN / n-GaN的超晶格结构的第一氮化物半导体层; 形成在所述第一氮化物半导体层上以发光的有源层; 形成在所述有源层上的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 根据本发明,活性层​​的结晶度提高,光功率和可靠性也得到提高。
    • 6. 发明授权
    • Electrochemical processing of solid materials in fused salt
    • 熔融盐固体物质的电化学处理
    • US07879219B2
    • 2011-02-01
    • US10497567
    • 2002-12-02
    • Derek John FrayRobert Charles Copcutt
    • Derek John FrayRobert Charles Copcutt
    • C25F3/00C30B9/14C25C3/36
    • C22B34/129C22B5/04C22B9/14C25C3/28
    • The subject invention pertains to methods for processing a solid material (M1X) comprising a solid solution of a non-metal species (X) in a metal or semi-metal (M1) or a compound between the non-metal species and the metal or semi-metal is immersed in a molten salt (M2Y). A cathodic potential is applied to the material to remove a portion of the non-metal species by electro-deoxidation. To remove the non-metal species at lower concentrations, a source of a reactive metal (M3) is immersed in the molten salt and is electronically connected to the material. Reactions occur at the material, where the non-metal species dissolves in the salt, and at the reactive metal, which reacts with the non-metal species dissolved in the salt to form a reaction product more stable than a compound between the non-metal species and the metal or semi-metal (M1). The non-metal species is thus removed from the solid material.
    • 本发明涉及用于处理包含金属或半金属(M1)中的非金属物质(X)的固溶体或非金属物质与金属之间的化合物的固体材料(M1X)的方法,或 将半金属浸入熔融盐(M2Y)中。 通过电脱氧将阴极电势施加到材料上以除去一部分非金属物质。 为了以较低浓度去除非金属物质,将活性金属(M3)的源浸入熔融盐中并与该材料电子连接。 反应发生在非金属物质溶解在盐中的物质和反应性金属,其与溶解在盐中的非金属物质反应形成比非金属化合物更稳定的反应产物 物种和金属或半金属(M1)。 因此,非金属物质从固体材料中除去。
    • 7. 发明授权
    • Bond enhancement for underwater repair
    • 水下维修加固
    • US07871483B2
    • 2011-01-18
    • US11580153
    • 2006-10-12
    • Gray MullinsRajan Sen
    • Gray MullinsRajan Sen
    • B32B37/00
    • B29C66/001B29C66/721B29C66/73715B29C66/81455B29C70/342B29C73/10E04G23/0218E04G2023/0251Y10T156/1028B29C65/00
    • Provided is a method for enhancing an adhesive bond between a pile and a resin adhesive by maintaining a constant uniform positive pressure of the entire wrapped region regardless of the shrinkage in the resin adhesive. This invention enhances underwater adhesive bond by ensuring proper contact while curing. In one embodiment, constant inward pressure is created by encapsulating the repair and applying a vacuum. The invention can be used for a variety of underwater applications using different resins and different substrate materials. For instance, the invention could be used to repair damaged critical infrastructure, e.g. Bridges, dams, pipelines and locks. Local, state and federal agencies in US and elsewhere as well as marine and naval contractors would find great utility with the invention. The concept could be extended to all adhesion dependent repairs.
    • 提供一种通过保持整个包裹区域的恒定的均匀正压而不管树脂粘合剂的收缩而增强绒头和树脂粘合剂之间的粘合剂粘合的方法。 本发明通过确保固化时的适当接触来增强水下粘合剂粘合。 在一个实施例中,通过封装修复并施加真空产生恒定的向内压力。 本发明可用于使用不同树脂和不同基底材料的各种水下应用。 例如,本发明可以用于修复损坏的关键基础设施,例如。 桥梁,水坝,管道和锁。 美国和其他地方以及海洋和海军承包商的地方,州和联邦机构将发现本发明的实用性。 该概念可以扩展到所有附着力维修。
    • 8. 发明授权
    • Image sensor and method for fabricating the same
    • 图像传感器及其制造方法
    • US07868366B2
    • 2011-01-11
    • US12048634
    • 2008-03-14
    • Min Hyung Lee
    • Min Hyung Lee
    • H01L33/00H01L21/00
    • H01L27/14632H01L21/76849H01L27/14621H01L27/14627H01L27/14636H01L27/14687
    • An image sensor is disclosed including a second semiconductor substrate including a metal interconnection and a second interlayer dielectric; a second via penetrating the second interlayer dielectric so that the second via is connected to the metal interconnection; a first semiconductor substrate on the second interlayer dielectric, the first semiconductor substrate having a unit pixel; a pre-metal dielectric on the first semiconductor substrate; a first via penetrating the pre-metal dielectric and the first semiconductor substrate, the first via being electrically connected to the second via; a first interlayer dielectric on the pre-metal dielectric including the first via; a metal interconnection on the first interlayer dielectric and connected to the first via and the unit pixel; a conductive barrier layer on the metal interconnection; and a color filter and a microlens on the first interlayer dielectric in each unit pixel.
    • 公开了一种图像传感器,包括:包括金属互连和第二层间电介质的第二半导体衬底; 穿过所述第二层间电介质的第二通孔,使得所述第二通孔连接到所述金属互连; 在所述第二层间电介质上的第一半导体衬底,所述第一半导体衬底具有单位像素; 在所述第一半导体衬底上的预金属电介质; 第一通孔穿过前金属电介质和第一半导体衬底,第一通孔电连接到第二通孔; 包括所述第一通孔的所述预金属电介质上的第一层间电介质; 在所述第一层间电介质上的金属互连,并连接到所述第一通孔和所述单位像素; 金属互连上的导电阻挡层; 以及每个单位像素中的第一层间电介质上的滤色器和微透镜。