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    • 3. 发明授权
    • Method and system for providing field biased magnetic memory devices
    • 用于提供场偏置磁存储器件的方法和系统
    • US07738287B2
    • 2010-06-15
    • US11692090
    • 2007-03-27
    • Zhitao DiaoLien-Chang WangYiming Huai
    • Zhitao DiaoLien-Chang WangYiming Huai
    • G11C11/00
    • G11C11/16Y10T29/49002
    • A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.
    • 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括在阵列,多个位线以及至少一个偏置结构中提供多个磁存储单元。 多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件,并且可由通过磁性元件驱动的至少一个写入电流来编程。 多个位线对应于多个磁存储单元。 所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。 所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。
    • 4. 发明授权
    • Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories
    • 使用不对称自由层并适用于自旋转移转矩存储器的磁结
    • US09184375B1
    • 2015-11-10
    • US14558145
    • 2014-12-02
    • Samsung Electronics Co., LTD.
    • Xueti TangJangeun Lee
    • H01L29/82H01L43/02H01L43/08H01L27/22H01L43/12
    • H01L43/02H01L27/222H01L27/228H01L43/08H01L43/10H01L43/12
    • A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
    • 描述可用于磁性装置的磁结。 磁结包括钉扎层,非磁性间隔层,不对称自由层和垂直磁各向异性(PMA)诱导层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层位于非磁性间隔层和PMA诱导层之间。 不对称自由层包括具有第一硼含量的第一铁磁层和具有第二硼含量的第二铁磁层。 第二硼含量低于第一硼含量。 第一硼含量和第二硼含量均大于零原子百分比。 磁结被配置成使得当写入电流通过磁结时,非对称自由层可在稳定磁状态之间切换。
    • 7. 发明授权
    • Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof
    • 磁存储器包括与磁移位寄存器集成的磁存储单元及其方法
    • US08649214B2
    • 2014-02-11
    • US13332230
    • 2011-12-20
    • Dmytro ApalkovVladimir NikitinAlexey Vasilyevitch Khvalkovskiy
    • Dmytro ApalkovVladimir NikitinAlexey Vasilyevitch Khvalkovskiy
    • G11C11/15
    • G11C19/0841G11C11/161G11C11/1675
    • A magnetic memory includes magnetic memory elements corresponding to magnetic memory cells and at least one shift register. Each magnetic memory element includes a pinned layer, a free layer, and a nonmagnetic spacer layer between the pinned and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic memory element. The shift register(s) correspond to the magnetic memory elements. Each shift register includes domains separated by domain walls. A domain is antiparallel to an adjoining domain. The shift register(s) are configured such that an equilibrium state aligns a portion of the domains with the magnetic memory elements. The shift register(s) are also configured such that each domain wall shifts to a location of an adjoining domain wall when a shift current is passed through the shift register(s) in a direction along adjoining domains.
    • 磁存储器包括对应于磁存储器单元和至少一个移位寄存器的磁存储元件。 每个磁存储元件包括被钉扎层,自由层和在钉扎层和自由层之间的非磁性间隔层。 当写入电流通过磁存储元件时,自由层可在稳定磁状态之间切换。 移位寄存器对应于磁存储元件。 每个移位寄存器包括由畴壁分隔的域。 一个域与相邻域反向并行。 移位寄存器被配置为使得平衡状态将磁畴的一部分与磁存储元件对准。 移位寄存器还被配置为使得当移位电流沿着相邻域的方向通过移位寄存器时,每个域壁移动到相邻畴壁的位置。