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    • 1. 发明授权
    • Facing-targets-type sputtering apparatus and method
    • 面向目标型溅射装置及方法
    • US06911123B2
    • 2005-06-28
    • US09998235
    • 2001-12-03
    • Sadao Kadokura
    • Sadao Kadokura
    • C23C14/34C23C14/35H01J37/34H01L21/28H01L21/285
    • H01J37/3414C23C14/352H01J37/3405
    • Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each of two facing side faces of a vacuum chamber vessel or in each of two facing side faces of a box-type discharge unit attached to an opening portion of a vacuum chamber vessel. The two openings are covered by a pair of cooling blocks. Each cooling block holds a target facing a discharge space. Magnetic field generation means is disposed so as to surround each target and operative to generate a magnetic field that surrounds a discharge space provided between the paired targets. Electron reflection means is disposed above the exposed surface of each target along the periphery of the target. A DC power and a high-frequency power are applied between the vacuum chamber vessel and the targets.
    • 公开了一种能够在低气压和低放电电压的条件下形成金属膜的面向目标的溅射装置和方法。 在真空室容器的两个相对的侧面中的每一个中形成开口,或者在附接到真空室容器的开口部的盒式排出单元的两个相对的侧面中的每一个中形成开口。 两个开口被一对冷却块覆盖。 每个冷却块保持面向放电空间的目标。 磁场产生装置设置成围绕每个目标并且可操作地产生围绕设置在成对靶之间的放电空间的磁场。 电子反射装置沿着靶的周边设置在每个靶的暴露表面上方。 在真空室容器和靶之间施加直流电力和高频电力。