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    • 1. 发明授权
    • Acyl and carbamimidoyl alkanediamines
    • 酰基和氨基甲脒基烷二胺
    • US4762949A
    • 1988-08-09
    • US460287
    • 1983-01-24
    • Kenneth L. Rinehart, Jr.Guy T. CarterMichael T. Cheng
    • Kenneth L. Rinehart, Jr.Guy T. CarterMichael T. Cheng
    • C07C103/22C07C103/127C07C103/133
    • C07C279/12C07D239/42
    • Synthetically produced substantially pure biologically active compounds having the general formula ##STR1## wherein R.sub.1 is C.sub.1 -C.sub.20 alkyl, alkenyl, aryl, aralkyl, cycloalkyl, alkylcycloalkyl, cycloalkylalkyl, cycloalkenyl, alkylcycloalkenyl, or cycloalkenylalkyl;R.sub.2 is hydrogen, C.sub.1 -C.sub.10 alkyl or an amide-substituted alkyl having up to 10 carbon atoms;R.sub.3 is a cyclic, straight or branched chain hydrocarbon group having 2-12 carbon atoms, particularly --(CH.sub.2).sub.n --, wherein n is 2-12; orR.sub.2 and R.sub.3 are linked together to form an alkylene chain; andR.sub.4 is selected from ##STR2## (substituted or unsubstituted carbamimidoyl), ##STR3## (dimethylpyrimidyl), or ##STR4## (carbamyl) wherein each of R.sub.5, R.sub.6, and R.sub.7 is hydrogen or the same or different C.sub.1 -C.sub.8 alkyl group. The compounds are useful as bactericides for a wide variety of bacteria, including S.pyogenes, B.subtilis, K.pneumoniae, M.avium, B.fragilis, C.perfringens and C.albicans.
    • 合成生产的基本上纯的具有通式“IMAGE”的生物活性化合物,其中R 1是C 1 -C 20烷基,烯基,芳基,芳烷基,环烷基,烷基环烷基,环烷基烷基,环烯基,烷基环烯基或环烯基烷基; R2是氢,C1-C10烷基或具有至多10个碳原子的酰胺取代的烷基; R3是具有2-12个碳原子的环状,直链或支链烃基,特别是 - (CH 2)n - ,其中n是2-12; 或R 2和R 3连接在一起形成亚烷基链; 并且R 4选自下式(取代或未取代的氨甲脒基),(IMAGE)(二甲基嘧啶基)或者(甲酰基甲酰基),其中R 5,R 6和R 7各自为氢或相同或不同的C 1 -C 8烷基 。 这些化合物可用作多种细菌的杀菌剂,包括粟酒酵母菌,枯草芽孢杆菌,肺炎支原体,。ium属,裂殖酵母属,C.perfringens和C.albicans。
    • 3. 发明授权
    • Semiconductor light emitting device with quantum well active region of
indirect bandgap semiconductor material
    • 具有间隙带隙半导体材料的量子阱有源区的半导体发光器件
    • US4365260A
    • 1982-12-21
    • US214894
    • 1980-12-08
    • Nick Holonyak, Jr.
    • Nick Holonyak, Jr.
    • H01L33/00H01S5/343
    • B82Y20/00H01L33/0025H01S5/34313H01S5/3432
    • Advantageous operation can be achieved in a semiconductor heterostructure light emitting device by utilizing a single thin active layer which exhibits quantum size effects. It has been found that performance can be degraded by employing a single quantum layer that is thinner than a certain minimum thickness, this minimum thickness being about 100 Angstroms, (the approximate carrier scattering path length). In one form of the invention, there is provided a semiconductor heterostructure device which includes first and second relatively wide bandgap semiconductor regions of opposite conductivity types. A single quantum well active layer is disposed between the first and second regions. The active layer is formed of a relatively narrow bandgap semiconductor having a thickness which is in the range of about 100 to 400 Angstroms, and is preferably about 200 Angstroms. One preferred combination of materials for the device comprises aluminum gallium arsenide for the relatively wide bandgap semiconductor regions, and gallium arsenide for the single active layer. However, other combinations of materials may be suitable, for example: indium phosphide for the relatively wide bandgap regions and indium gallium phosphide arsenide for the single active layer; or indium gallium arsenide phosphide for the relatively wide bandgap regions and gallium arsenide phosphide for the single active layer; or aluminum gallium arsenide phosphide for the confining layer and gallium arsenide phosphide for the active layer. The latter two are particularly useful as emitters in the visible portion of the spectrum. In a further form of the invention, there is disclosed a semiconductor heterostructure device wherein the active region comprises one or more quantum layers of an indirect bandgap semiconductor material, preferably germanium.
    • 通过利用显示量子尺寸效应的单个薄的有源层,可以在半导体异质结构发光器件中实现有利的操作。 已经发现,通过采用比特定最小厚度更薄的单个量子层(最小厚度为约100埃)(近似载流子散射路径长度),可以降低性能。 在本发明的一种形式中,提供了一种半导体异质结构器件,其包括具有相反导电类型的第一和第二相对较宽的带隙半导体区域。 单个量子阱活性层设置在第一和第二区域之间。 有源层由具有约100至400埃范围内的厚度的较窄带隙半导体形成,优选为约200埃。 用于器件的材料的一种优选组合包括用于相对宽的带隙半导体区域的砷化镓镓,以及用于单一有源层的砷化镓。 然而,材料的其它组合可能是合适的,例如:用于相对宽的带隙区域的磷化铟和用于单一有源层的磷酸铟镓砷化物; 或砷化铟镓磷化物用于相对宽的带隙区域和用于单一活性层的磷化镓磷化物; 或用于限制层的砷化镓镓磷化物和用于活性层的砷化镓磷化物。 后两者在光谱的可见部分中特别有用。 在本发明的另一形式中,公开了半导体异质结构器件,其中有源区包括一个或多个间接带隙半导体材料的量子层,优选锗。
    • 4. 发明授权
    • Fine-grain semiconducting ceramic compositions
    • 细晶半导体陶瓷组合物
    • US4347167A
    • 1982-08-31
    • US192693
    • 1980-10-01
    • David A. PayneSang M. Park
    • David A. PayneSang M. Park
    • C04B35/46C04B35/47H01G4/12H01B1/06
    • C04B35/47H01G4/1281
    • A semiconducting internal boundary layer ceramic composition having a fine grain structure suitable for use in thin-layer multilayer capacitors is made in one step by firing a mixture comprising a major amount of finely divided strontium titanate, a minor amount of a compound containing either strontium or titanium, or an element functionally equivalent thereto, a minor amount of a semiconductor forming ingredient (dopant), the identity of which depends on whether the mixture is rich in strontium or in titanium, and a minor amount of a counterdopant selected from cuprous oxide or silver oxide. When the mixture is rich in titanium, the chemical doping agent used to produce semiconductivity is an oxide of a trivalent metal selected from bismuth, boron, iron, antimony, lanthanum and the rare earth and transition metals. When the mixture is rich in strontium, the dopant is an oxide of a pentavalent or hexavalent metal selected from tungsten (+6), niobium (+5), tantalum (+5), and molybdenum (+6).
    • 通过烧结含有主要量的细碎钛酸锶,少量含锶或锶的化合物的混合物,制备具有适用于薄层多层电容器的细晶粒结构的半导体内部边界层陶瓷组合物 钛或其功能等同的元素,少量的半导体形成成分(掺杂剂),其特性取决于混合物是富含锶还是钛,少量的反掺杂剂选自氧化亚铜或 氧化银。 当混合物富含钛时,用于制备半导体性的化学掺杂剂是选自铋,硼,铁,锑,镧以及稀土和过渡金属的三价金属的氧化物。 当混合物富含锶时,掺杂剂是选自钨(+6),铌(+5),钽(+5)和钼(+6)的五价或六价金属的氧化物。