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1. 发明授权

US4790262A Thin-film coating apparatus 失效
标题翻译：薄膜涂装设备
公开(公告)号：US4790262A
公开(公告)日：1988-12-13
申请号：US914328
申请日：1986-10-01
申请人： Muneo Nakayama , Akira Uehara , Hiroyoshi Sago , Hideyuki Mizuki
发明人： Muneo Nakayama , Akira Uehara , Hiroyoshi Sago , Hideyuki Mizuki
IPC分类号： B05C11/08 , G03F7/16 , H01L21/00 , H01L21/027
CPC分类号： H01L21/6715 , G03F7/162 , Y10S134/902
摘要： A thin-film coating apparatus for coating a thin film on a material includes a casing, a spinner mounted in the casing for rotating the material, and a pipe disposed upwardly of the spinner and having in a lower end thereof a nozzle for dropping a film-forming coating solution onto the material. The casing comprises an annular upper plate, a cylindrical circumferential wall, and a bottom plate. The annular upper plate has defined therein gas flow passages for passage of an inert gas such as an N.sub.2 gas introduced from an exterior supply source, and gas ejector holes defined in the upper surface of the annular upper plate in communication with the gas flow passages for ejecting the inert gas toward the pipe.
摘要翻译：用于在材料上涂覆薄膜的薄膜涂布装置包括壳体，安装在壳体中用于旋转材料的旋转器和设置在旋转器的上方的管，并且在其下端具有用于滴下薄膜的喷嘴形成涂层溶液。壳体包括环形上板，圆柱形周壁和底板。环形上板限定有用于通过诸如从外部供应源引入的N 2气体的惰性气体的气体流动通道和限定在环形上板的上表面中的与气体流动通道连通的气体排出孔，向管道喷射惰性气体。

2. 发明授权

US4465553A Method for dry etching of a substrate surface 失效
标题翻译：用于干蚀刻衬底表面的方法
公开(公告)号：US4465553A
公开(公告)日：1984-08-14
申请号：US551898
申请日：1983-11-15
申请人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
发明人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： The invention provides a method for fine pattern-wise etching of a surface layer on a substrate such as semiconductor silicon wafers in a dry process by use of a gaseous mixture of pentafluorochloroethane and sulfur hexafluoride as the etching gas to support the plasma atmosphere. The inventive method is advantageous in the compatibility of the requirements for a large etching rate and a high precision of the fine patterning in contrast to the generally accepted understanding that these two requirements are not compatible with each other since an etching gas having a high etching rate causes remarkable side etching to decrease the precision of the desired patterning.
摘要翻译：本发明提供一种通过使用五氟氯乙烷和六氟化硫的气体混合物作为蚀刻气体在干法中在诸如半导体硅晶片的基板上精细图案化蚀刻表面层以支持等离子体气氛的方法。本发明的方法在与蚀刻速率高的蚀刻气体之间相互不兼容的普遍接受的理解中，与蚀刻速率大的精度要求和高精度图案化的要求相兼容，导致显着的侧面蚀刻以降低所需图案的精度。

3. 外观设计

USD291413S Wafer holding frame 失效
公开(公告)号：USD291413S
公开(公告)日：1987-08-18
申请号：US689661
申请日：1985-01-08
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
设计人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama

4. 发明授权

US4597882A Process for regenerating waste oils of synthetic lubricants containing fluorine atom 失效
标题翻译：用于再生含有氟原子的合成润滑剂废油的方法
公开(公告)号：US4597882A
公开(公告)日：1986-07-01
申请号：US615736
申请日：1984-05-31
申请人： Toshihiro Nishimura , Muneo Nakayama , Akira Hashimoto
发明人： Toshihiro Nishimura , Muneo Nakayama , Akira Hashimoto
IPC分类号： C08G65/00 , C08G65/30 , C08G65/46 , C10M175/00 , C10M107/38
CPC分类号： C08G65/30 , C08G65/007 , C08G65/46 , C10M175/0075
摘要： Waste oils of synthetic lubricants containing fluorine atom are admixed with a solvent containing fluorine atom compatible with the waste oils thereby causing contaminants contained in the waste oils to float up into the upper region on the mixed solution. The solvent containing fluorine atom is removed from the solution of the lower layer by way of evaporation, distillation or the like. The regenerated oils of the synthetic lubricants containing fluorine atom thus obtained are completely colorless and transparent in appearance, and they have properties and performances quite similar to those of the fresh oils.
摘要翻译：含有氟原子的合成润滑剂的废油与含有与废油相容的氟原子的溶剂混合，从而导致废油中含有的污染物浮起到混合溶液中的上部区域。通过蒸发，蒸馏等从下层的溶液中除去含有氟原子的溶剂。由此获得的含有氟原子的合成润滑剂的再生油在外观上是完全无色透明的，它们具有与新鲜油相似的性能和性能。

5. 发明授权

US4577165A High-frequency oscillator with power amplifier and automatic power control 失效
标题翻译：具有功率放大器和自动功率控制的高频振荡器
公开(公告)号：US4577165A
公开(公告)日：1986-03-18
申请号：US580853
申请日：1984-02-16
申请人： Akira Uehara , Takashi Uehara , Miyuki Saito , Toshiyuki Ishida
发明人： Akira Uehara , Takashi Uehara , Miyuki Saito , Toshiyuki Ishida
IPC分类号： H03B5/36 , H03L5/02
CPC分类号： H03B5/36 , H03L5/02 , H03B2200/0094 , H03B2200/0098
摘要： A high-frequency oscillator including an oscillation circuit (1) having a quartz crystal (X) and an amplifying element (Q.sub.2), a power amplifying circuit (3) for amplifying the output of the oscillation circuit, and a control system (Q.sub.7, 6) for varying a bias voltage of the amplifying element to thereby control the output power of the power amplification circuit. The control system comprises an FET (Q.sub.7) connected at the drain thereof to the amplifying element, and a control circuit (6) for applying a control signal to the gate of the FET.
摘要翻译：包括具有石英晶体（X）和放大元件（Q2）的振荡电路（1）的高频振荡器，用于放大振荡电路的输出的功率放大电路（3）和控制系统（Q7， 6），用于改变放大元件的偏置电压，从而控制功率放大电路的输出功率。控制系统包括在其漏极处连接到放大元件的FET（Q7）和用于向FET的栅极施加控制信号的控制电路（6）。

6. 发明授权

US4542710A Solution-dropping nozzle device 失效
标题翻译：滴液喷嘴装置
公开(公告)号：US4542710A
公开(公告)日：1985-09-24
申请号：US526607
申请日：1983-08-26
申请人： Muneo Nakayama
发明人： Muneo Nakayama
IPC分类号： B05B7/04 , B05C5/00 , B05C9/08 , B05C11/08 , H01L21/00
CPC分类号： H01L21/6715 , B05C11/08 , B05C9/08
摘要： A solution-dropping nozzle device comprising an inner tube of a relatively large diameter which permits a solution to flow down therethrough, and a plurality of outer tubes of a relatively small diameter adapted for supplying a cleaning solvent to the lower end part of the inner tube, the outer tubes having at least the lower end parts thereof tight-fitted on an outer circumferential portion of the inner tube so as to enclose the same continuously. The outer tubes may have the lower ends thereof positioned higher than the lower end of the inner tube.The nozzle device is free from the concentration of a dropping solution at the nozzle end part, and the eduction of a solute thereof.
摘要翻译：一种降液喷嘴装置，其包括允许溶液向下流动的相对较大直径的内管，以及适于向内管的下端部分供应清洁溶剂的相对小直径的多个外管外管至少具有下端部紧固在内管的外圆周部分上以便连续包围该外管。外管可以使其下端定位成高于内管的下端。喷嘴装置不会在喷嘴端部处的滴液的浓度和其溶质的排出。

7. 发明授权

US4474642A Method for pattern-wise etching of a metallic coating film 失效
标题翻译：金属涂膜的图案蚀刻方法
公开(公告)号：US4474642A
公开(公告)日：1984-10-02
申请号：US514793
申请日：1983-07-18
申请人： Hisashi Nakane , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
发明人： Hisashi Nakane , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
IPC分类号： C23F1/00 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/312 , H01L21/3213 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/32139 , H01L21/312
摘要： The invention provides an improved process for providing wirings and electrodes of aluminum film on the surface of a substrate. Instead of the conventional method of directly forming an organic resist layer on the metal film, a remarkable improvement in the fineness and accuracy of patterning is obtained by providing a subsidiary masking layer, mainly composed of silicon dioxide, between the metal film and the organic resist layer; and pattern-wise etching by first etching the subsidiary masking layer through a patterned mask of the organic resist layer with a fluorine-containing etching gas to form a patterned subsidiary masking layer, and then etching the metal film with a chlorine-containing etching gas through the mask of the patterned subsidiary masking layer, followed by final removal of the remaining subsidiary masking layer.
摘要翻译：本发明提供了一种用于在衬底的表面上提供铝膜的布线和电极的改进方法。代替在金属膜上直接形成有机抗蚀剂层的常规方法，通过在金属膜和有机抗蚀剂之间设置主要由二氧化硅构成的辅助掩模层，可以显着提高图案的细度和精度层; 并通过用含氟蚀刻气体通过有机抗蚀剂层的图案化掩模蚀刻辅助掩模层以形成图案化的掩蔽层，然后用含氯蚀刻气体通过蚀刻气体蚀刻金属膜，并进行图案蚀刻图案化的辅助掩模层的掩模，然后最后去除剩余的辅助掩模层。

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