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1. 发明申请

US20220416110A1 AVALANCHE PHOTODIODE STRUCTURE 有权
公开(公告)号：US20220416110A1
公开(公告)日：2022-12-29
申请号：US17777775
申请日：2020-11-18
申请人： THE UNIVERSITY OF SHEFFIELD
发明人： Chee Hing TAN
IPC分类号： H01L31/107 , H01L31/0304 , H01L31/0352
摘要： An avalanche photodiode (APD) structure, comprising an absorption layer comprising InGaAs, InGaAlAs, InGaAsP, or an InGaAs/GaAsSb type-II superlattice, an avalanche layer comprising AlGaAsSb, and a transition portion disposed between the absorption layer and the avalanche layer is disclosed. The transition portion comprises a first grading layer of InAlGaAs or InGaAsP and a first field control layer disposed between the first grading layer and the avalanche layer. The first field control layer has a bandgap between the bandgap of the absorption layer and the bandgap of the avalanche layer. In an alternative embodiment, an avalanche photodiode (APD) structure, comprising an absorption layer comprising GaAsSb, an avalanche layer comprising AlGaAsSb, and a transition portion disposed between the absorption layer and the avalanche layer. The transition portion comprises a first grading layer and one or more field control layers having a bandgap between the bandgaps of the absorption layer and the avalanche layer.

2. 发明申请

US20220278165A1 LED ARRAYS 有权
公开(公告)号：US20220278165A1
公开(公告)日：2022-09-01
申请号：US17597699
申请日：2020-07-14
申请人： The University of Sheffield
发明人： Tao Wang
IPC分类号： H01L27/15 , H01L33/08 , H01L33/60
摘要： A method of producing a light emitting diode (LED) array comprises: forming a plurality of layers (100, 101, 103) of semiconductor material; forming a dielectric mask layer (104) over the plurality of layers, the dielectric mask layer having an array of holes (106) through it each exposing an area of one of the layers of semiconductor material, and growing an LED structure (110, 112, 114) in each of the holes arranged to emit light over a range of wavelengths. At least some of the plurality layers (101) form a distributed Bragg reflector (DBR) arranged to reflect light of at least some of said range of wavelengths.

3. 发明申请

US20210321888A1 VOLUMETRIC BLOOD FLOW 有权
公开(公告)号：US20210321888A1
公开(公告)日：2021-10-21
申请号：US17267751
申请日：2019-08-08
申请人： THE UNIVERSITY OF SHEFFIELD
发明人： Paul Morris , Julian Gunn , David Rodney Hose , Patricia Lawford
IPC分类号： A61B5/0215 , A61B5/026 , A61B34/10
摘要： A computer-implemented method of determining data indicating volumetric flow rate within an artery. The method comprises receiving data indicating a proximal pressure measurement relative to a direction of blood flow; receiving data indicating a distal pressure measurement relative to the direction of blood flow; wherein the proximal pressure measurement and the distal pressure measurement are obtained using at least one pressure transducer; receiving geometric model data representing the artery, wherein the geometric model data is generated based upon image data indicative of the artery; and computing a volumetric flow rate with in the artery, wherein computing comprises performing a numerical simulation of blood flow through the artery based upon the geometric model data, the data indicating a proximal pressure measurement and the data indicating a distal pressure measurement.

4. 发明申请

US20210244848A1 SOLID SUSPENSION 有权
公开(公告)号：US20210244848A1
公开(公告)日：2021-08-12
申请号：US17271107
申请日：2019-08-27
申请人： THE UNIVERSITY OF SHEFFIELD
发明人： Caroline Joanne Harrison , Paul Vincent Hatton , Rebecca Louise Hutchinson , Cheryl Ann Miller
IPC分类号： A61L27/04 , A61L27/12 , A61L27/58 , A61L27/10
摘要： A solid suspension for use in bone regeneration and/or the repair of bone defects, comprising a source of at least one group II metal cation and a source of zinc cations, wherein the source of zinc cations comprises zinc oxide and wherein where there is only one group II metal cation this is strontium. A bone graft comprising a solid suspension, a method of preparation of a solid suspension and a use of a solid suspension in bone regeneration and/or in the repair of bone defects.

5. 发明申请

US20210154206A1 WOUND HEALING MEDICAMENT 有权
公开(公告)号：US20210154206A1
公开(公告)日：2021-05-27
申请号：US16491683
申请日：2018-03-07
申请人： The University of Sheffield , Comsats Intitute of Information Technology
发明人： Muhammad Yar , Sheila Macneil
IPC分类号： A61K31/565 , A61K31/7004 , A61K47/36 , A61K47/42 , A61K47/32 , A61K47/34 , A61K47/38 , A61K45/06 , A61K9/70 , A61P17/02 , A61L26/00
摘要： The invention provides a D-deoxyribose sugar for use in promoting wound healing wherein the sugar is provided in a carrier and wherein the carrier is a biocompatible matrix material or a hydrogel.

6. 发明申请

US20200289590A1 Oncolytic Herpes Simplex Virus Infected Cells 审中-公开
公开(公告)号：US20200289590A1
公开(公告)日：2020-09-17
申请号：US16790459
申请日：2020-02-13
申请人： Virttu Biologics Limited , The University of Sheffield
发明人： Joe Conner , Munitta Muthana , Claire Elizabeth Lewis
IPC分类号： A61K35/763 , A61K41/00 , C12N5/0786 , A61K35/15 , A61K9/19 , A61M37/00 , A61K9/00 , A61K47/69 , A61K33/26 , A61K9/50 , C12N7/00
摘要： A monocyte, monocyte derived cell or macrophage infected with an oncolytic herpes simplex virus is disclosed together with uses of such infected cells in the treatment of diseases such as cancer.

7. 发明申请

US20180372695A1 CONTINUOUS WAVE ULTRASOUND FOR ANALYSIS OF A SURFACE 审中-公开
公开(公告)号：US20180372695A1
公开(公告)日：2018-12-27
申请号：US16064719
申请日：2016-12-21
申请人： THE UNIVERSITY OF SHEFFIELD
发明人： Robin MILLS , Robert S. DWYER-JOYCE , Matthew MARSHALL
IPC分类号： G01N29/34 , G01B17/02 , G01N29/04 , G01N29/12 , G01N29/44
摘要： A continuous wave ultrasound analysis device for analysing a surface of a component includes an input to receive ultrasound data relating to continuous wave, swept frequency ultrasound propagated through the component; a processing section to derive a standing wave amplitude spectrum from the received ultrasound data, and determine a property of an unconstrained layer on the surface based on the standing wave amplitude spectrum; and an output to output the determined property of the layer. A method of continuous wave ultrasound for analysing a surface is also provided.

8. 发明授权

US08659038B2 Semiconductor light source and method of fabrication thereof 失效
标题翻译：半导体光源及其制造方法
公开(公告)号：US08659038B2
公开(公告)日：2014-02-25
申请号：US13375723
申请日：2010-06-09
申请人： Kristian Groom , Richard Hogg
发明人： Kristian Groom , Richard Hogg
IPC分类号： H01L33/00 , H01S3/04 , H01S5/00 , H01S3/00
CPC分类号： H01S5/50 , H01S5/1014 , H01S5/168 , H01S5/205 , H01S5/2202 , H01S5/2209 , H01S5/2231
摘要： Embodiments of the present invention provided a method of fabricating a semiconductor light source structure. The method comprises providing a GaAs substrate; forming a lower cladding layer above the substrate, the lower cladding layer comprising an AIxGa1-xAs alloy; forming an active region above the lower cladding layer, the active region comprising a GaAs separate confinement heterostructure; and forming an upper cladding layer comprising an AIxGa1-xAs alloy above the active region in the form of an elongate stripe bounded on either side by an InGaP current-blocking layer, the elongate stripe defining an index-guided optical waveguide. The stripe is formed such that at least one free end of the stripe is spaced apart from an edge of the substrate in a direction parallel to a longitudinal axis of the stripe such that a portion of the lower cladding layer, active region, current blocking layer and upper cladding layer extend beyond the at least one free end of the stripe thereby to provide an unpumped and laterally unguided window region.
摘要翻译：本发明的实施例提供了一种制造半导体光源结构的方法。该方法包括提供GaAs衬底; 在所述衬底上形成下包层，所述下包层包含Al x Ga 1-x As合金; 在所述下包层上形成有源区，所述有源区包括GaAs分离的限制异质结构; 并且在InGaP电流阻挡层的任一侧上以细长条纹的形式在有源区上方形成包含Al x Ga 1-x As合金的上包层，该细长条限定了折射率导引的光波导。条纹形成为使得条带的至少一个自由端在平行于条纹的纵向轴线的方向上与基底的边缘间隔开，使得下包层的一部分，有源区，电流阻挡层并且上包层延伸超过条带的至少一个自由端，从而提供未抽空和横向未导向的窗口区域。

9. 发明申请

US20130221409A1 SEMICONDUCTOR DEVICES WITH 2DEG AND 2DHG 有权
标题翻译：具有2DEG和2DHG的半导体器件
公开(公告)号：US20130221409A1
公开(公告)日：2013-08-29
申请号：US13812725
申请日：2011-06-07
申请人： Akira Nakajima , Sankara Narayanan Ekkanath Madathil
发明人： Akira Nakajima , Sankara Narayanan Ekkanath Madathil
IPC分类号： H01L29/778
CPC分类号： H01L29/7782 , H01L27/095 , H01L29/1029 , H01L29/2003 , H01L29/42316 , H01L29/7786 , H01L29/7787 , H01L29/782 , H01L29/872
摘要： A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted.
摘要翻译：半导体器件包括三个半导体层。半导体层被布置成形成由偏振层分离的2DHG和2DEG。该装置包括多个电极：电连接到2DHG的第一和第二电极，使得电流可以经由2DHG在它们之间流动，第三电极与2DEG电连接，使得当正电压施加到第三电极时，相对于至少一个其它电极，2DEG和2DHG将至少部分耗尽。

10. 发明申请

US20130126942A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130126942A1
公开(公告)日：2013-05-23
申请号：US13639075
申请日：2011-06-21
申请人： Akira Nakajima , Sankara Narayanan Ekkanath Madathil , Yasunobu Sumida , Hiroji Kawai
发明人： Akira Nakajima , Sankara Narayanan Ekkanath Madathil , Yasunobu Sumida , Hiroji Kawai
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L29/0619 , H01L29/1075 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/66219 , H01L29/66462 , H01L29/7786 , H01L29/861 , H01L29/872
摘要： A low-loss GaN-based semiconductor device is provided.The semiconductor device has the InzGa1-zN layer (where 0≦z
摘要翻译：提供了一种低损耗GaN基半导体器件。半导体器件具有InzGa1-zN层（其中0 @ z <1），Al x Ga 1-x N层（其中0

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