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1. 发明授权

US10685848B2 Workpiece processing method 有权
公开(公告)号：US10685848B2
公开(公告)日：2020-06-16
申请号：US16127468
申请日：2018-09-11
申请人： TOKYO ELECTRON LIMITED
发明人： Yu Nagatomo , Yoshihide Kihara
IPC分类号： H01L21/3213 , H01L21/285
摘要： In a method of an embodiment, a tungsten film is formed on a workpiece. The workpiece includes an underlying film and a mask provided on the underlying film. The tungsten film has a first region extending along the side wall surface of the mask that defines an opening, and a second region extending on the underlying film. Subsequently, the tungsten film is plasma-etched while leaving the first region. In forming the tungsten film, a precursor gas containing tungsten is supplied to the workpiece. Then, plasma of hydrogen gas is generated in order to supply hydrogen active species to the precursor on the workpiece.

2. 发明申请

US20110220287A1 EXPOSURE CONDITION SETTING METHOD, SUBSTRATE PROCESSING APPARATUS, AND COMPUTER PROGRAM 有权
标题翻译：曝光条件设置方法，基板处理设备和计算机程序
公开(公告)号：US20110220287A1
公开(公告)日：2011-09-15
申请号：US13114329
申请日：2011-05-24
申请人： Kazuo SAWAI , Akihiro Sonoda
发明人： Kazuo SAWAI , Akihiro Sonoda
IPC分类号： C23F1/08
CPC分类号： G03F7/70641 , H01L21/31144 , H01L22/12 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.
摘要翻译：一种方法包括在设置在测试基板上的蚀刻目标层上形成抗蚀剂膜，并且在多个区域上顺序地在抗蚀剂膜上以预定的测试图案顺序曝光，同时分别使用曝光量和焦点值，随后的发展，从而在多个区域形成抗蚀剂图案; 然后通过散射计技术蚀刻蚀刻目标层，去除抗蚀剂图案，并测量多个区域处的蚀刻图案的形状; 并且确定曝光量和焦点值的组合的管理范围，以参考在顺序曝光中使用的曝光量和聚焦值来获得具有预定形状的蚀刻图案，抗蚀剂的线宽度图案和蚀刻图案的线宽。

3. 发明申请

US20100316961A1 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20100316961A1
公开(公告)日：2010-12-16
申请号：US12859907
申请日：2010-08-20
申请人： Yuichiro INATOMI
发明人： Yuichiro INATOMI
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/6715 , H01L21/67178 , H01L21/67184 , Y10T137/8593
摘要： A substrate treatment apparatus which uniformly forms a fine resist pattern with a desired dimension within a plane of a substrate is disclosed. In a solvent vapor supply unit, a solvent vapor discharge nozzle is provided which can discharge a solvent vapor for swelling a resist pattern while moving above the front surface of a wafer. The wafer for which developing treatment has been finished and on which a resist pattern has been formed is carried into the solvent vapor supply unit, and the solvent vapor discharge nozzle is moved above the front surface of the wafer, so that the solvent vapor discharge nozzle supplies the solvent vapor onto the front surface of the wafer. This uniformly supplies a predetermined amount of solvent vapor to the resist pattern on the front surface of the wafer. As a result, the solvent vapor causes the resist pattern to evenly swell by a predetermined dimension, so that a resist pattern with a desired dimension is finally uniformly formed within the plane of the wafer.
摘要翻译：公开了一种在衬底的平面内均匀形成具有所需尺寸的精细抗蚀剂图案的衬底处理设备。在溶剂蒸气供给单元中，设置溶剂蒸汽排出喷嘴，其可以在晶片的前表面移动时排出溶剂蒸气以溶胀抗蚀剂图案。已经完成了显影处理并且已经形成抗蚀剂图案的晶片被携带到溶剂蒸气供应单元中，并且溶剂蒸汽排放喷嘴在晶片的前表面上方移动，使得溶剂蒸气排出喷嘴将溶剂蒸气供应到晶片的前表面上。这样就将预定量的溶剂蒸气均匀地供应到晶片的前表面上的抗蚀图案上。结果，溶剂蒸汽使抗蚀剂图案均匀地膨胀预定的尺寸，使得具有期望尺寸的抗蚀剂图案最终均匀地形成在晶片的平面内。

4. 发明申请

US20100006033A1 VAPORIZER, VAPORIZATION MODULE AND FILM FORMING APPARATUS 有权
标题翻译：蒸发器，蒸发模块和膜形成装置
公开(公告)号：US20100006033A1
公开(公告)日：2010-01-14
申请号：US12563672
申请日：2009-09-21
申请人： SUMI TANAKA
发明人： SUMI TANAKA
IPC分类号： C23C16/00 , F24H1/00
CPC分类号： C23C16/4485 , H01L21/6715
摘要： A vaporizer (300) is formed by connecting block-shaped vaporization modules (310). Each vaporization module has a discharge opening for a liquid source material; a vaporization chamber (370) for vaporizing the liquid source material, which is discharged from the discharge opening, to create a source gas; a liquid material flow path (320) formed so as to penetrate through joint surfaces connected to other vaporization modules; and a spray nozzle communicating with a portion in the middle of the liquid material flow path and leading the liquid source material, which flows in the flow path, to the discharge opening. Each vaporization module is connected at its joint surface to each of the other vaporization modules to cause the liquid material flow paths of all the vaporization modules to communicate with one another. When various flow rates ranging from low to high levels is required, the structure of the evaporator can be easily changed according to such rates without a reduction in evaporation efficiency.
摘要翻译：蒸发器（300）通过连接块状蒸发模块（310）形成。每个蒸发模块具有用于液体源材料的排出口; 用于蒸发从排出口排出的液体源材料的蒸发室（370），以产生源气体; 液体材料流动路径（320），其形成为穿过连接到其它蒸发模块的接合表面; 以及与液体材料流路的中间部分连通并将在流路中流动的液体源材料引导到排出口的喷嘴。每个蒸发模块在其接合表面处连接到每个其它蒸发模块，以使所有蒸发模块的液体材料流动路径彼此连通。当需要从低到高的各种流量时，可以根据这种速率容易地改变蒸发器的结构，而不会降低蒸发效率。

5. 发明申请

US20080241358A1 CATALYST-ASSISTED ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS WITH INTEGRATED IN-SITU REACTIVE TREATMENT 有权
标题翻译：催化辅助原子层沉积含硅复合膜与一体化现场反应处理
公开(公告)号：US20080241358A1
公开(公告)日：2008-10-02
申请号：US11693891
申请日：2007-03-30
申请人： Raymond Joe , Meenakshisundaram Gandhi
发明人： Raymond Joe , Meenakshisundaram Gandhi
IPC分类号： B05D5/12
CPC分类号： C23C16/45534 , C23C16/345 , C23C16/402 , C23C16/45536
摘要： A method is provided for low temperature catalyst-assisted atomic layer deposition of silicon-containing films such as SiO2 and SiN. The method includes exposing a substrate surface containing X—H functional groups to a first R1—X—R2 catalyst and a gas containing silicon and chlorine to form an X/silicon/chlorine complex on the surface, and forming a silicon-X layer terminated with the X—H functional groups by exposing the X/silicon/chlorine complex on the substrate surface to a second R1—X—R2 catalyst and a X—H functional group precursor. The method further includes one or more integrated in-situ reactive treatments that reduce or eliminate the need for undesired high-temperature post-deposition processing. One reactive treatment includes hydrogenating unreacted X—H functional groups and removing carbon and chlorine impurities from the substrate surface. Another reactive treatment saturates the silicon-X layer with additional X—H functional groups.
摘要翻译：提供了一种用于低温催化剂辅助原子层沉积诸如SiO 2和SiN的含硅膜的方法。该方法包括将含有XH官能团的基底表面暴露于第一R 1 -XR 2 N 2催化剂和含有硅和氯的气体以形成X /硅/氯络合物并且通过将衬底表面上的X /硅/氯络合物暴露于第二R 1 -XR 2 2上而形成用XH官能团封端的硅-X层， SUB>催化剂和XH官能团前体。该方法还包括一种或多种集成的原位反应处理，其减少或消除对不期望的高温后沉积处理的需要。一种反应处理包括氢化未反应的X-H官能团并从基底表面除去碳和氯杂质。另一种反应性处理使具有另外的X-H官能团的硅-X层饱和。

6. 发明申请

US20070099129A1 Developing method and developing apparatus 失效
标题翻译：开发方法和开发设备
公开(公告)号：US20070099129A1
公开(公告)日：2007-05-03
申请号：US10578611
申请日：2004-11-26
申请人： Junichi Kitano , Osamu Miyahara , Shinya Wakamizu
发明人： Junichi Kitano , Osamu Miyahara , Shinya Wakamizu
IPC分类号： G03C5/00
CPC分类号： G03F7/40
摘要： A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.
摘要翻译：使用显影方法对设置在晶片W上的曝光抗蚀剂膜进行显影液的显影处理和通过漂洗液的漂洗处理。在对晶片W进行干燥处理之前，晶片W上的抗蚀剂膜与显影液或漂洗液体湿润的状态下，含有抗蚀剂固化助剂的化学液（固化化学液）保留在晶片W上的抗蚀剂膜被提供到晶片W的表面上。然后，通过抗蚀剂固化助剂的协同效应将紫外线辐射到晶片的表面上以固化残留在晶片W上的抗蚀剂膜并且因此辐射紫外线，以防止图案下降。

7. 发明申请

US20130013240A1 SEMICONDUCTOR MANUFACTURING SYSTEM 有权
标题翻译：半导体制造系统
公开(公告)号：US20130013240A1
公开(公告)日：2013-01-10
申请号：US13617950
申请日：2012-09-14
申请人： Gaku Ikeda , Koichi Miyashita , Takamasa Chikuma , Satoshi Gomi , Chunmui Li , Kunio Takano
发明人： Gaku Ikeda , Koichi Miyashita , Takamasa Chikuma , Satoshi Gomi , Chunmui Li , Kunio Takano
IPC分类号： G01N37/00 , G06F19/00
CPC分类号： G05B19/4065 , G05B2219/32226 , Y02P90/14
摘要： A semiconductor manufacturing system includes a program for inspecting a device of the system executing: displaying a screen for selecting an inspection set including inspection items having a manipulation item and/or a check item; retrieving the inspection items, arranging the inspection items in the order of workflow, and displaying each inspection item on a screen with an execution attribute indicating whether each inspection item is “automatic” or “manual” execution; receiving an inspection start command and reading the first inspection item from a storage unit. The program also executes steps corresponding to the following cases (a) to (d) until there are no more inspection items: (a) the read-out inspection item being the manipulation item and “automatic”; (b) the read-out inspection item being the manipulation item and “manual”; (c) the read-out inspection item being the check item and “automatic”; and (d) the read-out inspection item being the check item and “manual”.
摘要翻译：半导体制造系统包括用于检查执行系统的装置的程序：显示用于选择包括具有操作项目和/或检查项目的检查项目的检查集合的屏幕; 检索检查项目，按照工作流程顺序排列检查项目，并在屏幕上显示每个检查项目，其中执行属性指示每个检查项目是自动还是手动执行; 接收检查开始命令并从存储单元读取第一检查项目。该程序还执行与以下情况（a）至（d）相对应的步骤，直到不再有检查项目：（a）作为操作项目的读出检查项目并自动; （b）读出的检查项目是操作项目和手册; （c）读出检查项目为检查项目并自动; 和（d）读出的检查项目是检查项目和手册。

8. 发明申请

US20110048643A1 PLASMA PROCESSING APPARATUS AND FOCUS RING 有权
标题翻译：等离子体加工设备和聚焦环
公开(公告)号：US20110048643A1
公开(公告)日：2011-03-03
申请号：US12941701
申请日：2010-11-08
申请人： Shosuke Endoh , Shinji Himori
发明人： Shosuke Endoh , Shinji Himori
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32642 , Y10T279/23
摘要： A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.
摘要翻译：等离子体处理装置和聚焦环能够在待处理的基板的整个表面上进行均匀的等离子体处理，从而提高等离子体处理的表面均匀性，与常规情况相比。聚焦环设置在基座2上，该基座2用于在其上安装半导体晶片W，并且还用作下部电极，以围绕半导体晶片W的周围。聚焦环6包括薄板形状的环形构件设置成围绕晶片W的周边保持间隙，并且安装在半导体晶片下方的下环体和薄板形状的环构件。

9. 发明申请

US20100233883A1 SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理方法
公开(公告)号：US20100233883A1
公开(公告)日：2010-09-16
申请号：US12721006
申请日：2010-03-10
申请人： Eiichi Nishimura , Masato Kushibiki , Fumiko Yamashita
发明人： Eiichi Nishimura , Masato Kushibiki , Fumiko Yamashita
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31116 , Y10T428/24215 , Y10T428/24612 , Y10T428/24917 , Y10T428/2495
摘要： A substrate processing method processes a substrate including a processing target film, an organic film provided on the processing target film and having a plurality of line-shaped portions having fine width, and a hard film covering the line-shaped portions and the processing target film exposed between the line-shaped portions. The method includes a first etching step of etching a part of the hard film to expose the organic film and portions of the processing target film between the line-shaped portions; an ashing step of selectively removing the exposed organic film; and a second etching step of etching a part of the remaining hard film.
摘要翻译：基板处理方法处理包括处理目标膜，设置在处理对象膜上的有机膜并具有多个宽度细的线状部分的基板和覆盖线状部分和处理目标膜的硬膜在线状部分之间露出。所述方法包括：蚀刻所述硬膜的一部分以暴露所述有机膜和所述处理对象膜的所述线状部之间的部分的第一蚀刻工序; 选择性地去除所暴露的有机膜的灰化步骤; 以及蚀刻剩余硬膜的一部分的第二蚀刻步骤。

10. 发明申请

US20100026328A1 INSPECTING METHOD AND PROGRAM FOR OBJECT TO BE INSPECTED 有权
标题翻译：检查对象的检查方法和程序
公开(公告)号：US20100026328A1
公开(公告)日：2010-02-04
申请号：US12512448
申请日：2009-07-30
申请人： Hideaki TANAKA
发明人： Hideaki TANAKA
IPC分类号： G01R31/02 , G01R31/00
CPC分类号： G01R31/2894 , G01R31/2887
摘要： An inspecting method for an object to be inspected is provided to bring probes of a probe card into electrical contact with a predetermined number of devices of target devices of the object at a time to inspect electrical characteristics of the target devices by moving a mounting table for mounting thereon the object under the control of a control unit. Upon completion of the inspection of the target devices, if inspection errors have occurred in specific devices of the target devices in a regular pattern, the target devices are re-examined, and when the re-examination is carried out, a contact position between the probe card and the object is displaced from a contact position in a previous inspection by a distance of at least one device to inspect electrical characteristics of the number of devices of the target devices at a time.
摘要翻译：提供检查对象的检查方法，以使探针卡的探针一次与目标装置的预定数量的装置电接触，以通过移动安装台来检查目标装置的电气特性在控制单元的控制下在其上安装物体。在完成对目标装置的检查之后，如果以规则模式在目标装置的特定装置中发生检查错误，则重新检查目标装置，并且当进行重新检查时，探针卡，并且物体在先前检查中从接触位置移位至少一个设备的距离，以一次检查目标设备的设备的数量的电特性。

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