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1. 发明申请

US20130116472A1 PROCESS FOR PREPARING UREA 审中-公开
标题翻译：制备尿素的方法
公开(公告)号：US20130116472A1
公开(公告)日：2013-05-09
申请号：US13580006
申请日：2011-02-28
申请人： Norbert Auner
发明人： Norbert Auner
IPC分类号： C07C273/10
CPC分类号： C07C273/10 , Y02P20/142
摘要： A method of producing urea includes reacting SiO2/Al2O3 or SiO2/Al2O3-containing material, with addition of a carbon source, with gaseous nitrogen at elevated temperature to produce silicon nitride (Si3N4)/aluminum nitride (AlN) or silicon nitride/aluminum nitride-containing material; reacting the silicon nitride/aluminum nitride or silicon nitride/aluminum nitride-containing material in the presence of a basic alkali metal compound and/or alkaline-earth metal compound, with water at elevated temperature, to produce ammonia and alkali metal silicates/aluminates and/or alkaline earth metal silicates/aluminates; and reacting the ammonia with carbon dioxide to produce the urea.
摘要翻译：制备尿素的方法包括在升高的温度下使含有碳源的SiO 2 / Al 2 O 3或SiO 2 / Al 2 O 3材料与气态氮反应以产生氮化硅（Si 3 N 4）/氮化铝（AlN）或氮化硅/氮化铝含材料; 在碱性碱金属化合物和/或碱土金属化合物的存在下，将氮化硅/氮化铝/氮化硅/氮化铝/氮化铝材料与水在升高的温度下反应，生成氨和碱金属硅酸盐/铝酸盐， /或碱土金属硅酸盐/铝酸盐; 并使氨与二氧化碳反应以产生尿素。

2. 发明授权

US08414863B2 Hydrogen and energy generation by thermal conversion of silanes 失效
标题翻译：通过硅烷的热转化产生氢和能量
公开(公告)号：US08414863B2
公开(公告)日：2013-04-09
申请号：US12358470
申请日：2009-01-23
申请人： Julius Pretterebner , Norbert Auner
发明人： Julius Pretterebner , Norbert Auner
IPC分类号： C01B3/02 , C01B3/24
CPC分类号： C01B3/06 , C01B2203/066 , Y02E60/364
摘要： The invention relates to a process for preparing hydrogen. According to the invention, monosilane or polysilane is converted to hydrogen at an elevated temperature with steam or oxygen.
摘要翻译：本发明涉及一种制备氢的方法。根据本发明，在升高的温度下，用蒸汽或氧气将甲硅烷或聚硅烷转化成氢。

3. 发明申请

US20120315392A1 METHOD FOR PRODUCING HYDROGENATED POLYGERMASILANE AND HYDROGENATED POLYGERMASILANE 审中-公开
标题翻译：生产氢化聚甲基硅烷和氢化聚甲基硅烷的方法
公开(公告)号：US20120315392A1
公开(公告)日：2012-12-13
申请号：US13513217
申请日：2010-12-06
申请人： Norbert Auner , Christian Bauch , Sven Holl , Rumen Deltschew , Javad Mohsseni , Gerd Lippold , Thoralf Gebel
发明人： Norbert Auner , Christian Bauch , Sven Holl , Rumen Deltschew , Javad Mohsseni , Gerd Lippold , Thoralf Gebel
IPC分类号： C01B33/00 , B05D3/02 , C09D1/00
CPC分类号： C08G77/60 , C01B33/04 , C01G17/00 , C08G79/14 , Y02P20/582
摘要： A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane.
摘要翻译：制备氢化聚锗硅烷作为纯化合物或化合物的混合物的方法包括氢化卤代聚锗硅烷。

4. 发明申请

US20120313037A1 CHLORIDE-CONTAINING SILICON 审中-公开
标题翻译：含氯化硅
公开(公告)号：US20120313037A1
公开(公告)日：2012-12-13
申请号：US13512461
申请日：2010-12-02
申请人： Norbert Auner , Christian Bauch , Sven Holl , Rumen Deltschew , Javad Mohsseni , Gerd Lippold
发明人： Norbert Auner , Christian Bauch , Sven Holl , Rumen Deltschew , Javad Mohsseni , Gerd Lippold
IPC分类号： C01B33/107 , C09K3/00
CPC分类号： C08G77/60 , C01B33/107 , C01B33/10773
摘要： A chlorinated polysilane has the formula SiClx wherein x=0.01−0.8 and which can be produced by thermolysis of a chloropolysilane at a temperature below 600° C.
摘要翻译：氯化聚硅烷具有式SiClx，其中x = 0.01-0.8，其可以通过在低于600℃的温度下热分解氯代聚硅烷来制备。

5. 发明申请

US20120145533A1 METHOD FOR THE PRODUCTION OF SILICON FROM SILYL HALIDES 有权
标题翻译：从硅藻土生产硅的方法
公开(公告)号：US20120145533A1
公开(公告)日：2012-06-14
申请号：US13398346
申请日：2012-02-16
申请人： Norbert AUNER
发明人： Norbert AUNER
IPC分类号： C07F7/14
CPC分类号： C01B33/03 , B01J19/088 , B01J19/126 , B01J2219/0875 , B01J2219/0883 , B01J2219/0894
摘要： The present invention relates to a method for the production of silicon from silyl halides. In a first step, the silyl halide is converted, with the generation of a plasma discharge, to a halogenated polysilane, which is subsequently decomposed to silicon, in a second step, with heating.
摘要翻译：本发明涉及从甲硅烷基卤化物制备硅的方法。在第一步骤中，随着加热，甲硅烷基卤化物随着等离子体放电的产生被转化成卤化聚硅烷，随后将其分解成硅。

6. 发明授权

US09428618B2 Method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group 有权
标题翻译：制备第三至第五主要元素的卤化低聚物和/或卤代聚合物的方法
公开(公告)号：US09428618B2
公开(公告)日：2016-08-30
申请号：US13119509
申请日：2009-09-15
申请人： Norbert Auner , Sven Holl , Christian Bauch , Gerd Lippold , Rumen Deltschew , Thoralf Gebel , Javad Mohsseni
发明人： Norbert Auner , Sven Holl , Christian Bauch , Gerd Lippold , Rumen Deltschew , Thoralf Gebel , Javad Mohsseni
IPC分类号： C08G77/60 , C08G77/50
CPC分类号： C08G77/60 , C08G77/50
摘要： The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.
摘要翻译：本发明涉及一种生产第三至第五主要元素的卤化低聚物和/或卤代聚合物的方法，其中卤化低聚物和/或卤化聚合物由第一链形成剂和第二链形成剂在等离子体化学反应中。两种链形成剂中的至少一种是第三至第五主族元素的卤素化合物。

7. 发明授权

US08177943B2 Solid polysilane mixtures 有权
标题翻译：固体聚硅烷混合物
公开(公告)号：US08177943B2
公开(公告)日：2012-05-15
申请号：US12402852
申请日：2009-03-12
申请人： Norbert Auner , Sven Holl , Christian Bauch , Gerd Lippold , Rumen Deltschew
发明人： Norbert Auner , Sven Holl , Christian Bauch , Gerd Lippold , Rumen Deltschew
IPC分类号： B01J19/08 , H05F3/00
CPC分类号： C08G77/60
摘要： The invention is directed to mixtures of polysilanes macroscopically solid at ambient temperature wherein the individual components of the composition SinH2n and/or SinH2n+2 of which decompose before they are boiling at an applied process pressure and which are produced from the hydrogenation of plasmachemically generated largely chlorinated polysilane mixtures. These mixtures of polysilanes are especially suited to be applied onto surfaces as solutions or dispersions and to obtain silicon-based structures or layers in subsequent process steps. Furthermore, they are especially safe in handling and can be additionally made up into transport forms in suitable transport containers.
摘要翻译：本发明涉及在环境温度下宏观固体的聚硅烷的混合物，其中组合物SinH2n和/或SinH2n + 2的各组分在它们在施加的工艺压力下沸腾之前分解并且由等离子体化学产生的氢化产生氯化聚硅烷混合物。聚硅烷的这些混合物特别适用于作为溶液或分散体施加到表面上，并在随后的工艺步骤中获得硅基结构或层。此外，它们在处理中特别安全，并且可以在适当的运输容器中另外构成运输形式。

8. 发明申请

US20110305620A1 Method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group 有权
标题翻译：制备第三至第五主要元素的卤化低聚物和/或卤代聚合物的方法
公开(公告)号：US20110305620A1
公开(公告)日：2011-12-15
申请号：US13119509
申请日：2009-09-15
申请人： Norbert Auner , Sven Holl , Christian Bauch , Gerd Lippold , Rumen Deltschew , Thoralf Gebel , Javad Mohsseni
发明人： Norbert Auner , Sven Holl , Christian Bauch , Gerd Lippold , Rumen Deltschew , Thoralf Gebel , Javad Mohsseni
IPC分类号： C01B33/08 , C07F7/12
CPC分类号： C08G77/60 , C08G77/50
摘要： The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.
摘要翻译：本发明涉及一种生产第三至第五主要元素的卤化低聚物和/或卤代聚合物的方法，其中卤化低聚物和/或卤化聚合物由第一链形成剂和第二链形成剂在等离子体化学反应中。两种链形成剂中的至少一种是第三至第五主族元素的卤素化合物。

9. 发明授权

US09062370B2 Bodies coated by SiC and method for creating SiC-coated bodies 有权
标题翻译：由SiC涂覆的体和用于制造SiC涂层体的方法
公开(公告)号：US09062370B2
公开(公告)日：2015-06-23
申请号：US13262406
申请日：2010-03-17
申请人： Ingolf Endler , Mandy Höhn , Thoralf Gebel , Christian Bauch , Rumen Deltschew , Sven Holl , Gerd Lippold , Javad Mohsseni , Norbert Auner
发明人： Ingolf Endler , Mandy Höhn , Thoralf Gebel , Christian Bauch , Rumen Deltschew , Sven Holl , Gerd Lippold , Javad Mohsseni , Norbert Auner
IPC分类号： B32B9/00 , C23C16/32 , B82Y30/00 , C23C16/30 , B32B18/00 , C22C29/06
CPC分类号： C23C16/325 , B32B18/00 , B82Y30/00 , C22C29/065 , C23C16/30 , Y10T428/264
摘要： Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C—SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C—SiC and amorphous SiC or halogen-containing nanocrystalline 3C—SiC and amorphous carbon.
摘要翻译：涂覆有SiC层或具有至少SiC硬质材料层的多层涂层体系的体，其中SiC层由含卤素的纳米晶3C-SiC或由含卤素的纳米晶3C-SiC和无定形SiC或含卤素的纳米晶3C-SiC和无定形碳。

10. 发明申请

US20130171052A1 Process for Removing Nonmetallic Impurities from Metallurgical Silicon 有权
标题翻译：从冶金硅去除非金属杂质的工艺
公开(公告)号：US20130171052A1
公开(公告)日：2013-07-04
申请号：US13057084
申请日：2009-07-29
申请人： Seyed-Javad Mohsseni-Ala , Christian Bauch , Rumen Deltschew , Thoralf Gebel , Gerd Lippold , Matthias Heuer , Fritz Kirscht , Kamel Ounadjela
发明人： Seyed-Javad Mohsseni-Ala , Christian Bauch , Rumen Deltschew , Thoralf Gebel , Gerd Lippold , Matthias Heuer , Fritz Kirscht , Kamel Ounadjela
IPC分类号： C01B33/037 , C30B15/00 , C30B15/34 , C30B11/00
CPC分类号： C01B33/037 , C30B11/00 , C30B15/00 , C30B15/34 , C30B29/06
摘要： The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.
摘要翻译：本发明描述了从冶金硅中除去非金属杂质的方法。熔融物由冶金硅和含卤化硅制成。结果，杂质以非金属卤化物的形式升华并从熔体中除去。与通过Si熔体吹入气态卤素的已知方法相比，该新方法可以以特别简单和有效的方式进行。

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