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2. 发明授权

US4516314A Method of making a high intensity solar cell 失效
标题翻译：制造高强度太阳能电池的方法
公开(公告)号：US4516314A
公开(公告)日：1985-05-14
申请号：US590331
申请日：1984-03-16
申请人： Bernard L. Sater
发明人： Bernard L. Sater
IPC分类号： H01L27/142 , H01L31/052 , H01L31/0687 , H01L31/18
CPC分类号： H01L31/0687 , H01L31/047 , H01L31/0543 , H01L31/0547 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： A method of manufacturing a high intensity edge illuminated solar cell is provided which comprises the following steps. A semiconductor substrate is formed having first, second and third essentially parallel layers having impurity doped semiconductor material and arranged in that order with the first and third layers terminating in opposing essentially parallel first and second major surfaces. The second layer is of a first type conductivity and the first layer is an opposite second type conductivity so as to define a PN junction between the first and second layers and which junction is essentially parallel to the first and second major surfaces. The third layer is of the first type conductivity but is of greater impurity concentration than that of the second layer for providing a built-in electrostatic drift field to enhance minority carrier movement toward the PN junction. The junction of the second and third layers is essentially parallel to the PN junction. First and second ohmic contact layers are applied on the first and second major surfaces respectively so as to provide electrical contacts thereon. The substrate is separated along separating planes into segments. These separating planes provide major working surfaces extending between the first and second major surfaces. The major working surfaces each contain a plurality of edge surfaces of the first, second and third impurity doped semiconductor material. The major working surfaces of each segment are prepared by passivating the edge surfaces of the first, second and third impurity doped material. At least one of the major working surfaces serves to receive incident radiation and thereby it serves as an operating surface. An accumulation layer is incorporated at the operating surface containing the first type conductivity semiconductor material to provide thereat a drift field to minimize minority carrier recombination at the operating surface.
摘要翻译：提供一种制造高强度边缘照明太阳能电池的方法，包括以下步骤。半导体衬底被形成为具有第一，第二和第三基本平行的层，其具有杂质掺杂半导体材料，并且按照该顺序排列，第一和第三层以相反的基本平行的第一和第二主表面终止。第二层是第一类型的导电性，并且第一层是相反的第二类型的导电性，以便限定第一和第二层之间的PN结，并且该连接基本上平行于第一和第二主表面。第三层是第一类型的导电性，但是具有比第二层的杂质浓度更大的杂质浓度，用于提供内置的静电漂移场以增强朝向PN结的少数载流子运动。第二层和第三层的结点基本上平行于PN结。第一和第二欧姆接触层分别施加在第一和第二主表面上，以便在其上提供电接触。衬底沿着分离平面分离成段。这些分离平面提供在第一和第二主表面之间延伸的主要工作表面。主要工作表面各自包含第一，第二和第三杂质掺杂半导体材料的多个边缘表面。通过钝化第一，第二和第三杂质掺杂材料的边缘表面来制备每个段的主要工作表面。主要工作表面中的至少一个用于接收入射辐射，从而用作操作表面。在包含第一类型的导电性半导体材料的操作表面上并入积累层，以提供漂移场，以最小化操作表面处的少数载流子复合。

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