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1. 发明授权

US09209345B2 Shallow trench textured regions and associated methods 有权
标题翻译：浅沟纹理区域及相关方法
公开(公告)号：US09209345B2
公开(公告)日：2015-12-08
申请号：US14084392
申请日：2013-11-19
申请人： SiOnyx, Inc.
发明人： Homayoon Haddad , Jutao Jiang
IPC分类号： H01L21/00 , H01L31/18 , H01L31/028 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14689 , H01L31/02327 , H01L31/028 , H01L31/182
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.
摘要翻译：提供光敏设备及相关方法。在一个方面，例如，光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体层，耦合到半导体层并被定位成与电磁辐射相互作用的纹理区域。纹理化区域可以由一系列浅沟槽隔离特征形成。

2. 发明申请

US20150270306A1 PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 有权
标题翻译：感光成像装置及相关方法
公开(公告)号：US20150270306A1
公开(公告)日：2015-09-24
申请号：US14223938
申请日：2014-03-24
申请人： SiOnyx, Inc.
发明人： Homayoon Haddad , Jutao Jiang , Jeffrey McKee , Drake Miller , Leonard Forbes , Chintamani Palsule
IPC分类号： H01L27/146
CPC分类号： H01L27/14638 , H01L27/14609 , H01L27/1462 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/14698
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.
摘要翻译：提供光敏设备和相关方法。在一个方面，例如，光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域以及耦合到半导体衬底并且可操作以从所述至少一个结转移电信号。在一个方面，纹理化区域可操作以便于从红外线电磁辐射的检测中产生电信号。在另一方面，与电磁辐射相互作用进一步包括与缺少纹理区域的半导体衬底相比增加半导体衬底的有效吸收波长。

3. 发明授权

US08698084B2 Three dimensional sensors, systems, and associated methods 有权
标题翻译：三维传感器，系统和相关方法
公开(公告)号：US08698084B2
公开(公告)日：2014-04-15
申请号：US13418226
申请日：2012-03-12
申请人： Jutao Jiang , Jeffrey McKee , Homayoon Haddad , Chris Sungkwon Hong
发明人： Jutao Jiang , Jeffrey McKee , Homayoon Haddad , Chris Sungkwon Hong
IPC分类号： G01J5/02 , H01L27/14
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.
摘要翻译：提供3D传感器，系统和相关方法。在一个方面，例如，用于检测红外和可见光的单片3D传感器可以包括具有器件表面的半导体衬底，在器件表面处形成的至少一个可见光光电二极管和在器件表面处形成的至少一个3D光电二极管靠近所述至少一个可见光光电二极管。该装置还可以包括功能上耦合到至少一个3D光电二极管并定位成与电磁辐射相互作用的量子效率增强的红外光区域。在一个方面，量子效率增强红外光区域是位于器件表面处的纹理区域。

4. 发明申请

US20140027774A1 Laser Processed Photovoltaic Devices and Associated Methods 审中-公开
标题翻译：激光加工光伏器件及相关方法
公开(公告)号：US20140027774A1
公开(公告)日：2014-01-30
申请号：US13472075
申请日：2012-05-15
申请人： Xia Li , Christopher Vineis , Martin U. Pralle
发明人： Xia Li , Christopher Vineis , Martin U. Pralle
IPC分类号： H01L31/105
CPC分类号： H01L31/1055 , H01L31/02363 , H01L31/0747 , Y02E10/50
摘要： Photovoltaic heterojunction devices, combination hetero- homo-junction devices, and associated methods are provided. In one aspect, for example, a photovoltaic device can include a doped semiconductor substrate having a first textured region and a second textured region opposite the first textured region, a first intrinsic semiconductor layer coupled to the first textured region opposite the semiconductor substrate and a second intrinsic semiconductor layer coupled to the second textured region opposite the semiconductor substrate. A first semiconductor layer can be coupled to the first intrinsic semiconductor layer opposite the first textured region, where the first semiconductor layer is doped to an opposite polarity of the doped semiconductor substrate. A second semiconductor layer can be coupled to the second intrinsic semiconductor layer opposite the second textured region, where the second semiconductor layer is doped to a same polarity as the semiconductor substrate but having a higher dopant concentration as the semiconductor substrate.
摘要翻译：提供了光伏异质结器件，组合异质结器件和相关方法。在一个方面，例如，光伏器件可以包括具有第一纹理区域和与第一纹理化区域相对的第二纹理化区域的掺杂半导体衬底，耦合到与半导体衬底相对的第一纹理化区域的第一本征半导体层，本征半导体层耦合到与半导体衬底相对的第二纹理区域。第一半导体层可以耦合到与第一纹理化区域相对的第一本征半导体层，其中第一半导体层被掺杂到掺杂半导体衬底的相反极性。第二半导体层可以耦合到与第二纹理化区域相对的第二本征半导体层，其中第二半导体层被掺杂到与半导体衬底相同的极性，但是具有较高的掺杂剂浓度作为半导体衬底。

5. 发明授权

US08309389B1 Photovoltaic semiconductor devices and associated methods 有权
标题翻译：光伏半导体器件及相关方法
公开(公告)号：US08309389B1
公开(公告)日：2012-11-13
申请号：US12879950
申请日：2010-09-10
申请人： Susan Alie , Stephen D. Saylor , Christopher J. Vineis
发明人： Susan Alie , Stephen D. Saylor , Christopher J. Vineis
IPC分类号： H01L21/00
CPC分类号： H01L31/02363 , Y02E10/50
摘要： Photovoltaic semiconductor devices and associated methods are provided. In one aspect, for example, a method of making a photovoltaic semiconductor device having enhanced electromagnetic radiation absorption can include applying a damage removal etch (DRE) to a semiconductor material to an RMS surface roughness of from about 0.5 nm to about 50 nm and texturing a single side of the semiconductor material. The texturing further includes irradiating a target region of the semiconductor material with laser radiation to create features having a size of from about 50 nm to about 10 microns.
摘要翻译：提供了光伏半导体器件和相关方法。在一个方面，例如，制造具有增强的电磁辐射吸收的光伏半导体器件的方法可以包括将损伤去除蚀刻（DRE）施加到半导体材料至约0.5nm至约50nm的RMS表面粗糙度，并且纹理化半导体材料的单面。纹理还包括用激光辐射照射半导体材料的目标区域以产生尺寸为约50nm至约10微米的特征。

6. 发明申请

US20120068289A1 Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods 审中-公开
标题翻译：具有增强电磁辐射检测和相关方法的装置
公开(公告)号：US20120068289A1
公开(公告)日：2012-03-22
申请号：US13069135
申请日：2011-03-22
申请人： Susan Alie , Martin U. Pralle , Chintamani Palsule , Jeffrey McKee , Xia Li
发明人： Susan Alie , Martin U. Pralle , Chintamani Palsule , Jeffrey McKee , Xia Li
IPC分类号： H01L31/0232 , H01L21/31
CPC分类号： H01L31/02327 , H01L27/1463 , H01L27/14632 , H01L27/14687 , H01L31/1892 , Y02E10/50
摘要： Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer.
摘要翻译：提供了感光半导体器件和相关方法。一方面，半导体器件可以包括半导体衬底和耦合到半导体衬底的半导体层，其中半导体层具有与半导体衬底相对的器件表面。该器件还包括耦合在半导体衬底和半导体层之间的至少一个纹理区域。在另一方面，该器件还包括耦合在半导体衬底和半导体层之间的至少一个电介质层。

7. 发明授权

US07968834B2 Response-enhanced monolithic-hybrid pixel 有权
标题翻译：响应增强的单片混合像素
公开(公告)号：US07968834B2
公开(公告)日：2011-06-28
申请号：US12235060
申请日：2008-09-22
申请人： Kenton Veeder
发明人： Kenton Veeder
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： G01J1/4228 , H01L27/14609
摘要： A light-sensing pixel is described that includes more than one detector element, each of which is sensitive to a range of wavelengths of the electromagnetic spectrums. The detectors are arranged in a readout circuit that can be constructed on a monolithic semiconductor product such that one or more of the detectors can be switched on or off to include or exclude an output contribution from said detectors and enhance the response of the pixel. Also, the detectors can included a laser-treated semiconductor sensor for efficient sensing of radiation in one or more regions of the spectrum. Arrays and imaging products using such pixels are disclosed.
摘要翻译：描述了一种感光像素，其包括多于一个的检测器元件，每个检测器元件对电磁光谱的波长范围敏感。检测器布置在读取电路中，其可以构造在单片半导体产品上，使得一个或多个检测器可以被接通或断开，以包括或排除来自所述检测器的输出贡献并增强像素的响应。此外，检测器可以包括用于有效感测光谱的一个或多个区域中的辐射的激光处理的半导体传感器。公开了使用这种像素的阵列和成像产品。

8. 发明申请

US20140332665A1 PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 有权
标题翻译：感光成像装置及相关方法
公开(公告)号：US20140332665A1
公开(公告)日：2014-11-13
申请号：US14245872
申请日：2014-04-04
申请人： SiOnyx, Inc.
发明人： Jutao Jiang , Jeffrey McKee , Martin U. Pralle
IPC分类号： H01L27/146 , H04N5/376 , H01L25/16
CPC分类号： H01L27/14649 , H01L25/167 , H01L27/1461 , H01L27/14612 , H01L27/14625 , H01L27/1464 , H01L27/14645 , H01L27/14647 , H01L2924/0002 , H04N5/2256 , H04N5/37452 , H04N5/3765 , H04N9/045 , H01L2924/00
摘要： A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
摘要翻译：根据示例的用于检测红外和可见光的单片传感器包括半导体衬底和耦合到半导体衬底的半导体层。半导体层包括与半导体衬底相对的器件表面。在器件表面形成可见光光电二极管。在器件表面和可见光光电二极管附近也形成红外光电二极管。纹理区域耦合到红外光电二极管并定位成与电磁辐射相互作用。

9. 发明授权

US08802549B2 Semiconductor surface modification 有权
标题翻译：半导体表面改性
公开(公告)号：US08802549B2
公开(公告)日：2014-08-12
申请号：US13459506
申请日：2012-04-30
申请人： Jason Sickler , Keith Donaldson
发明人： Jason Sickler , Keith Donaldson
IPC分类号： H01L21/66 , B05C5/00
CPC分类号： H01L31/1804 , H01L21/228 , H01L21/268 , H01L33/005 , Y02E10/547 , Y02P70/521 , Y10S438/914
摘要： Methods, systems, and devices associated with surface modifying a semiconductor material are taught. One such method includes providing a semiconductor material having a target region and providing a dopant fluid layer that is adjacent to the target region of the semiconductor material, where the dopant fluid layer includes at least one dopant. The target region of the semiconductor material is lased so as to incorporate the dopant or to surface modify the semiconductor material. During the surface modification, the dopant in the dopant fluid layer is actively replenished.
摘要翻译：教导了与表面修饰半导体材料有关的方法，系统和装置。一种这样的方法包括提供具有目标区域并提供与半导体材料的目标区域相邻的掺杂剂流体层的半导体材料，其中掺杂剂流体层包括至少一种掺杂剂。半导体材料的目标区域被引导以掺入掺杂剂或表面改性半导体材料。在表面改性期间，掺杂剂流体层中的掺杂剂被积极地补充。

10. 发明授权

US08674316B1 Electromagnetic radiation imaging devices and associated methods 有权
标题翻译：电磁辐射成像装置及相关方法
公开(公告)号：US08674316B1
公开(公告)日：2014-03-18
申请号：US13932994
申请日：2013-07-01
申请人： SiOnyx, Inc.
发明人： Martin U. Pralle , James E. Carey , Stephen D. Saylor
IPC分类号： H01L27/146
CPC分类号： H01L27/14658
摘要： Electromagnetic radiation detection systems and associated methods are provided. In one aspect, for example, an electromagnetic radiation detection system includes a semiconductor material operable to detect electromagnetic radiation, the semiconductor material having a responsivity of greater than or equal to 0.3 A/W at an operating voltage of less than or equal to about 50 volts and at a wavelength of from about 0.01 nm to about 100 nm. The system can further include an electromagnetic radiation source positioned to deliver electromagnetic radiation to the semiconductor material.
摘要翻译：提供电磁辐射检测系统及相关方法。在一个方面，例如，电磁辐射检测系统包括可操作以检测电磁辐射的半导体材料，该半导体材料在小于或等于约50°的工作电压下具有大于或等于0.3A / W的响应度伏特，波长为约0.01nm至约100nm。该系统还可以包括电磁辐射源，其被定位成将电磁辐射传送到半导体材料。

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