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    • 3. 发明授权
    • Process for preparing tantalum powder for capacitors
    • 电容器钽粉制备工艺
    • US08673052B2
    • 2014-03-18
    • US12818379
    • 2010-06-18
    • Wenfeng ShiXueqing ChenYong LiXudong XiTao Guo
    • Wenfeng ShiXueqing ChenYong LiXudong XiTao Guo
    • B22F9/20B22F1/00
    • C01G35/00B22F9/20B22F2998/10B22F2999/00C01P2004/03C01P2004/62C01P2006/10C01P2006/12C01P2006/40H01G9/0029H01G9/0525B22F2201/013B22F2201/20B22F2201/10B22F1/0096
    • The present invention provides a process for preparing a tantalum powder with high specific capacity, which process comprising the steps of, in sequence, (1) a first reduction step: mixing tantalum oxide powder and a first reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tantalum suboxides powder; (2) a second reduction step: mixing the tantalum suboxides powder obtained from the step (1), in which impurities have been removed, and a second reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tantalum powder having high oxygen content; (3) a third reduction step: mixing the tantalum powder having high oxygen content obtained from the step (2), in which impurities have been removed, with a third reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tantalum metal powder suitable for capacitors; wherein after each reduction step, the oxidation product of reducing agent and the residual reducing agent are removed from the reaction product.
    • 本发明提供一种制备高比容量的钽粉的方法,该方法包括以下步骤:(1)第一还原步骤:均匀混合氧化钽粉末和第一还原剂粉末,然后进行 在氢气和/或惰性气体或真空气氛中还原反应,得到低氧化钽粉末; (2)第二还原步骤:将其中除去杂质的步骤(1)获得的低密度氧化钡粉末和均质的第二还原剂粉末混合,然后在氢气和/或惰性气体中进行还原反应,或 真空气氛,得到氧含量高的钽粉末; (3)第三还原步骤:将已经除去杂质的步骤(2)获得的具有高氧含量的钽粉末与第三还原剂粉末均匀混合,然后在氢气和/或 惰性气体或真空气氛,得到适合电容器的钽金属粉末; 其中在每个还原步骤之后,从反应产物中除去还原剂和剩余还原剂的氧化产物。
    • 5. 发明申请
    • Process for Preparing Tantalum Powder for Capacitors
    • 制备电容器钽粉的工艺
    • US20100326239A1
    • 2010-12-30
    • US12818379
    • 2010-06-18
    • Wenfeng SHIXueqing ChenYong LiXudong XiTao Guo
    • Wenfeng SHIXueqing ChenYong LiXudong XiTao Guo
    • B22F9/20B22F1/00
    • C01G35/00B22F9/20B22F2998/10B22F2999/00C01P2004/03C01P2004/62C01P2006/10C01P2006/12C01P2006/40H01G9/0029H01G9/0525B22F2201/013B22F2201/20B22F2201/10B22F1/0096
    • The present invention provides a process for preparing a tantalum powder with high specific capacity, which process comprising the steps of, in sequence, (1) a first reduction step: mixing tantalum oxide powder and a first reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tantalum suboxides powder; (2) a second reduction step: mixing the tantalum suboxides powder obtained from the step (1), in which impurities have been removed, and a second reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tantalum powder having high oxygen content; (3) a third reduction step: mixing the tantalum powder having high oxygen content obtained from the step (2), in which impurities have been removed, with a third reducing agent powder homogenously, and then carrying out reduction reaction in hydrogen and/or inert gas or vacuum atmosphere to obtain a tantalum metal powder suitable for capacitors; wherein after each reduction step, the oxidation product of reducing agent and the residual reducing agent are removed from the reaction product.
    • 本发明提供一种制备高比容量的钽粉的方法,该方法包括以下步骤:(1)第一还原步骤:均匀混合氧化钽粉末和第一还原剂粉末,然后进行 在氢气和/或惰性气体或真空气氛中还原反应,得到低氧化钽粉末; (2)第二还原步骤:将其中除去杂质的步骤(1)获得的低密度氧化钡粉末和均质的第二还原剂粉末混合,然后在氢气和/或惰性气体中进行还原反应,或 真空气氛,得到氧含量高的钽粉末; (3)第三还原步骤:将已经除去杂质的步骤(2)获得的具有高氧含量的钽粉末与第三还原剂粉末均匀混合,然后在氢气和/或 惰性气体或真空气氛,得到适合电容器的钽金属粉末; 其中在每个还原步骤之后,从反应产物中除去还原剂和剩余还原剂的氧化产物。