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1. 发明授权

US5660628A Method of manufacturing semiconductor epitaxial wafer 失效
标题翻译：制造半导体外延晶片的方法
公开(公告)号：US5660628A
公开(公告)日：1997-08-26
申请号：US291997
申请日：1994-08-18
申请人： Tadashige Sato , Hitora Takahashi
发明人： Tadashige Sato , Hitora Takahashi
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B29/40
摘要： There is provided a method for suppressing generation of cracks or damages on a compound semiconductor epitaxial wafer during an epitaxial growth due to growth of an epitaxial layer on the rear surface at the edge of the epitaxial layer which is located at the upstream side of the flow of the source gas. In manufacturing a semiconductor wafer by growing a single crystal semiconductor epitaxial layer having a zinc blend structure on a single crystal semiconductor substrate having a zinc blend structure, the surface of the single crystal semiconductor substrate has (100) surface orientation having an off angle and a source gas is supplied in the direction of the off angle or in a direction at 30.degree. or less to the direction at 180.degree. thereto.
摘要翻译：提供了一种在外延生长期间抑制由于在位于流动的上游侧的外延层的边缘处的外表面上的外延层的生长而导致的外延生长期间的裂纹或损伤的产生的方法的源气体。在通过在具有锌掺杂结构的单晶半导体衬底上生长具有锌共混结构的单晶半导体外延层来制造半导体晶片的过程中，单晶半导体衬底的表面具有（100）表面取向具有偏角和原料气体在偏离角度的方向或者在相对于180°的方向向30度以下的方向供给。

2. 发明授权

US4964968A Magnetron sputtering apparatus 失效
标题翻译：磁控溅射装置
公开(公告)号：US4964968A
公开(公告)日：1990-10-23
申请号：US321210
申请日：1989-03-09
申请人： Yoji Arita
发明人： Yoji Arita
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： H01J37/347 , C23C14/35 , H01J37/3408 , H01J37/3452 , H01J37/3458
摘要： A magnetron sputtering apparatus has a target disposed above an inner magnetic pole surrounded by an outer magnetic pole of opposite polarity and a gradient adjusting means mounted underneath the target and interposed between the inner and outer magnetic poles. The gradient adjusting means operates such that the gradient of the component of the leakage magnetic field vertical to the target is reduced over the middle portion of the target, between the inner and outer magnetic poles, and is increased at portions closer to the magnetic poles. The gradient adjusting means may be made of a soft magnetic material or a permanent magnet material, and the soft magnetic material may be used alone or in combination with the permanent magnet material. A second permanent magnet may be used in conjunction with the use of a permanent magnet as the gradient adjusting means. The magnetron sputtering apparatus prevents localized erosion of the target, thus making the area of erosion on the target more uniform, prolonging the life of the target, and providing for more even sputtered films.
摘要翻译：磁控管溅射装置具有设置在由相反极性的外磁极围绕的内磁极上方的靶和安装在靶下方并插入在内磁极与外磁极之间的梯度调节装置。梯度调整装置的操作使得垂直于目标的泄漏磁场的分量的梯度在目标的中间部分之间在内部和外部磁极之间减小，并且在更靠近磁极的部分处增加。梯度调节装置可以由软磁材料或永磁材料制成，并且软磁材料可以单独使用或与永久磁铁材料组合使用。结合使用永磁体作为梯度调节装置，可以使用第二永久磁铁。磁控溅射装置防止靶材的局部侵蚀，从而使目标上的侵蚀面积更均匀，延长靶材的寿命，并提供更均匀的溅射膜。

3. 发明授权

US4921817A Substrate for high-intensity led, and method of epitaxially growing same 失效
标题翻译：高强度基板，外延生长方法相同
公开(公告)号：US4921817A
公开(公告)日：1990-05-01
申请号：US353652
申请日：1989-03-08
申请人： Masahiro Noguchi
发明人： Masahiro Noguchi
IPC分类号： H01L21/205 , H01L21/20 , H01L21/208 , H01L33/30 , H01L33/40
CPC分类号： H01L33/40 , H01L33/0062 , H01L33/30 , Y10S148/099 , Y10S148/108 , Y10S148/135
摘要： A substrate for a high-intensity LED and the method of epitaxially growing the substrate according to the invention are based on the fact that, in using an AuZn alloy or the like as the ohmic electrode of the p-type Al.sub.x Ga.sub.1-x As layer (2), the higher the carrier concentration of this layer, the smaller the contact resistance and the lower the applied voltage (V.sub.F) necessary for passing a forward current of 10 mA. Joint use is made of gas-phase epitaxy and liquid-phase epitaxy. A layer having a carrier concentration three to five times that of an epitaxial layer formed by liquid-phase epitaxy (LPE) can be realized with excellent reproducibility by gas-phase epitaxy (MOCVD process, MBE process, etc.). By utilizing this p-type Al.sub.x Ga.sub.1-x As layer (2) as an electrode contact layer, contact resistance can be reduced and variance diminished.
摘要翻译： PCT No.PCT / JP88 / 00677 Sec。 371日期：1989年3月8日 102（e）日期1989年3月8日PCT Filed 1988年7月6日PCT Pub。出版物WO89 / 00769 日本1989年1月26日。根据本发明的高强度LED用基板和外延生长基板的方法是基于以下事实：在使用AuZn合金等作为对位基板的欧姆电极的情况下，类型的Al x Ga 1-x As层（2），该层的载流子浓度越高，接触电阻越小，通过10mA的正向电流所需的施加电压（VF）越低。联合使用气相外延和液相外延。可以通过气相外延（MOCVD工艺，MBE工艺等）以优异的再现性实现具有通过液相外延（LPE）形成的外延层的载流子浓度的三至五倍的层。通过利用该p型Al x Ga 1-x As层（2）作为电极接触层，可以降低接触电阻，减少方差。

4. 发明授权

US3499925A Process for the production of trans-4-aminomethylcyclohexane - 1 - carboxylic acid 失效
标题翻译：生产转化-4-氨基甲酰氯的方法1-羧酸
公开(公告)号：US3499925A
公开(公告)日：1970-03-10
申请号：US3499925D
申请日：1965-02-24
申请人： DAIICHI SEIYAKU CO , MITSUBISHI CHEM IND
发明人： NAITO TAKEO , OKANO ATSUJI , AOYAGI TAKAAKI , MIKI TOSAKU , KADOYA SHIZUO , INAOKA MASATO , SHINDO MOTONORI
IPC分类号： A61K31/195 , C07C51/00 , C07C61/08 , C07C101/04
CPC分类号： A61K31/195

5. 发明授权

US2858345A Glycerol production 失效
标题翻译：甘油生产
公开(公告)号：US2858345A
公开(公告)日：1958-10-28
申请号：US57500956
申请日：1956-03-30
申请人： OLIN MATHIESON
发明人： THOMAS ROBERT M , DANNELS BOBBY F
IPC分类号： C07C31/22
CPC分类号： C07C31/22

6. 发明授权

US2497538A Fluxes for use in the treatment of light metals 失效
标题翻译：用于轻金属处理的助焊剂
公开(公告)号：US2497538A
公开(公告)日：1950-02-14
申请号：US76580247
申请日：1947-08-02
申请人： MAGNESIUM ELEKTRON LTD
发明人： FREDERICK EMLEY EDWARD , JESSUP ALFRED C , CLIFTON JUNCTION
IPC分类号： C22B9/10
CPC分类号： C22B9/10

7. 发明授权

US2140246A Apparatus for aligning the side seams of traveling can bodies 失效
标题翻译：用于对准行进罐体的侧缝的装置
公开(公告)号：US2140246A
公开(公告)日：1938-12-13
申请号：US17347637
申请日：1937-11-08
申请人： CONTINENTAL CAN CO
发明人： O'NEIL JAMES H
IPC分类号： B23K1/16
CPC分类号： B23K1/16

8. 发明授权

US3449411A Process for the production of trans-4-aminomethylcyclohexane - 1-carboxylic acid 失效
标题翻译：生产转化-4-氨基甲酰基环己烷-1-羧酸的方法
公开(公告)号：US3449411A
公开(公告)日：1969-06-10
申请号：US44941165
申请日：1965-04-26
申请人： DAIICHI SEIYAKU CO , MITSUBISHI CHEM IND
发明人： NAITO TAKEO , OKANO ATSUJI , MIKI TOSAKU
IPC分类号： A61K31/195 , D04H1/48 , C07C99/00
CPC分类号： A61K31/195

9. 发明授权

US3263962A Rotor blade lock 失效
公开(公告)号：US3263962A
公开(公告)日：1966-08-02
申请号：US45003965
申请日：1965-04-22
申请人： GEN MOTORS CORP
发明人： DICKEY GILBERT J
IPC分类号： F01D5/30 , F01D5/32
CPC分类号： F01D5/3038
摘要： 1,067,309. Rotor blade fixing. GENERAL MOTORS CORPORATION. March 31, 1966 [April 22, 1965], No.14333/66. Heading F1T. The roots 18 of blades 16 are mounted in a circumferentially extending dovetail groove in the rotor disc rim 14 and located against circumferential movement by a plug 38 mounted in an aperture 32 aligned with the blade filling slot (26), Fig.2 (not shown). The roots 18 are spaced apart by abutting platforms on the blades and the plug 38 has axial flats 46 thereon engaging the two spaced roots 18 adjacent the filling slot (26). The plug is retained radially by an annular shoulder at its inner end 48 engaging an aperture 50 in a support 40 attached to rim 14 by a bolt 42 extending into the space between the adjacent pair of roots 18. Tabs 54 lock the bolt in position. The filling slot (26) is formed by segments cut away from the annular tongues 24 of the dovetail groove to form arcuate walls (28, 30) of sufficient width to enable the roots 18 to be entered radially.

10. 发明授权

US2924570A Hydrogenation of oils 失效
标题翻译：油的氢化
公开(公告)号：US2924570A
公开(公告)日：1960-02-09
申请号：US59919856
申请日：1956-07-20
申请人： EXXON RESEARCH ENGINEERING CO
发明人： HERRMANN JOHN W , BARR FRANK T
IPC分类号： C10G69/00
CPC分类号： C10G47/30 , C10G69/00

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