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1. 发明申请

US20130045699A1 Stacked CMOS Power Amplifier and RF Coupler Devices and Related Methods 有权
标题翻译：堆叠CMOS功率放大器和RF耦合器器件及相关方法
公开(公告)号：US20130045699A1
公开(公告)日：2013-02-21
申请号：US13656033
申请日：2012-10-19
申请人： Javelin Semiconductor, Inc.
发明人： Abhay Misra
IPC分类号： H04B1/04 , H01R43/00
CPC分类号： H03F3/195 , H01L2224/16225 , H01L2224/73265 , H03F3/24 , H03F2200/204 , H03G3/3042 , Y10T29/49117
摘要： Stacked CMOS power amplifier (PA) and radio frequency (RF) coupler devices and related methods are disclosed. The stacked device includes a CMOS PA die configured to receive a transmit input signal and to output an amplified transmit signal, and a RF coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal. The CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other, and the CMOS PA die and the RF coupler device are combined within a single semiconductor package. In some embodiments, the RF coupler device is positioned on top of the CMOS PA die, and in other embodiments the CMOS PA die is positioned on top of the RF coupler device.
摘要翻译：公开了叠层CMOS功率放大器（PA）和射频（RF）耦合器器件及相关方法。叠层器件包括被配置为接收发射输入信号并输出放大的发射信号的CMOS PA管芯，以及被配置为接收放大的发射信号，输出天线发射信号并输出与之成比例的RF信号的RF耦合器装置到天线发射信号。 CMOS PA管芯和RF耦合器件堆叠在彼此之上并电耦合，并且CMOS PA管芯和RF耦合器件在单个半导体封装内组合。在一些实施例中，RF耦合器件位于CMOS PA管芯的顶部，并且在其它实施例中，CMOS PA管芯位于RF耦合器器件的顶部上。

2. 发明授权

US08344808B2 Non-linear capacitance compensation 有权
标题翻译：非线性电容补偿
公开(公告)号：US08344808B2
公开(公告)日：2013-01-01
申请号：US12889890
申请日：2010-09-24
申请人： Anil Samavedam , David E. Bockelman , Vishnu Srinivasan , Eric Kimball
发明人： Anil Samavedam , David E. Bockelman , Vishnu Srinivasan , Eric Kimball
IPC分类号： H03F1/14
CPC分类号： H03G3/00 , H03F1/086 , H03F1/14 , H03F3/19 , H03F3/245 , H03F3/3022 , H03F2200/451 , H03F2203/30144
摘要： Embodiments are directed to capacitance compensation via a compensation device coupled to a gain device to compensate for a capacitance change occurring due to an input signal change, along with a controller coupled to the compensation device to receive the input signal and to control an amount of compensation based on the input signal. In some embodiments, banks may be formed of multiple compensation devices, where each of the banks has a different size and is coupled to receive a different set of bias voltages.
摘要翻译：实施例涉及通过耦合到增益器件的补偿器件的电容补偿，以补偿由于输入信号变化而发生的电容变化，连同耦合到补偿器件的控制器接收输入信号并控制补偿量基于输入信号。在一些实施例中，存储体可以由多个补偿装置形成，其中每个存储体具有不同的尺寸并被耦合以接收不同的一组偏置电压。

3. 发明授权

US08238981B2 Managing power supply transients 有权
标题翻译：管理电源瞬变
公开(公告)号：US08238981B2
公开(公告)日：2012-08-07
申请号：US12627455
申请日：2009-11-30
申请人： Michael James Mills
发明人： Michael James Mills
IPC分类号： H04B1/38
CPC分类号： H03F3/195 , H03F1/0277 , H03F1/52 , H03F3/211 , H03F3/24 , H03F3/72 , H03F2200/405 , H03F2200/441 , H03F2200/451 , H03F2200/555 , H03F2203/7236 , H03G1/0088 , H03G3/3042
摘要： In one embodiment, an apparatus includes a voltage regulator, an amplifier, and control logic. The regulator may receive a supply voltage and output a regulated voltage to an intermediate node. In turn, the amplifier is to be powered by the regulated voltage, while the control logic is coupled to the voltage regulator to cause a change in the regulated voltage to a safe voltage before one or more gain stages of the amplifier is to be coupled to or decoupled from an output signal path.
摘要翻译：在一个实施例中，一种装置包括电压调节器，放大器和控制逻辑。调节器可以接收电源电压并向中间节点输出调节电压。反过来，放大器将由调节电压供电，而控制逻辑耦合到电压调节器，以将放大器的一个或多个增益级耦合到一个或多个增益级之前将调节电压改变为安全电压或从输出信号路径去耦。

4. 发明授权

US08160520B2 Supply control for multiple power modes of a power amplifier 有权
标题翻译：功率放大器的多种功率模式的电源控制
公开(公告)号：US08160520B2
公开(公告)日：2012-04-17
申请号：US12151812
申请日：2008-05-09
申请人： Vishnu Srinivasan , David E. Bockelman
发明人： Vishnu Srinivasan , David E. Bockelman
IPC分类号： H04B1/04
CPC分类号： H03F1/0216 , H03F1/0244 , H03F3/19 , H03F3/211 , H03F3/245 , H03F3/72 , H03F2200/451 , H03F2200/507 , H03F2200/541 , H03F2203/21196 , H03F2203/7221 , H03F2203/7227 , H03F2203/7236 , H03G1/0088 , H03G3/004 , H03G3/3042
摘要： In one embodiment, the present invention includes an apparatus having at least two gain stages to receive incoming signals and to output amplified signals, along with multiple regulators. More specifically, a linear regulator can be coupled to the first gain stage to provide a first regulated voltage to the first gain stage, and a switching regulator coupled to the second gain stage to provide a second regulated voltage to the second gain stage.
摘要翻译：在一个实施例中，本发明包括具有至少两个增益级以接收输入信号并且与多个调节器一起输出放大信号的装置。更具体地，线性调节器可以耦合到第一增益级，以向第一增益级提供第一调节电压，以及耦合到第二增益级的开关稳压器，以向第二增益级提供第二调节电压。

5. 发明授权

US07728661B2 Controlling power with an output network 有权
标题翻译：用输出网络控制电源
公开(公告)号：US07728661B2
公开(公告)日：2010-06-01
申请号：US12151199
申请日：2008-05-05
申请人： David E. Bockelman , Vishnu Srinivasan
发明人： David E. Bockelman , Vishnu Srinivasan
IPC分类号： H03F1/14 , H03F3/68
CPC分类号： H03F3/72 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/45475 , H03F2200/451 , H03F2200/537 , H03F2200/541 , H03F2203/45614 , H03F2203/7233
摘要： In one embodiment, the present invention includes multiple gain stages and an output network coupled to the gain stages. Each of the gain stages can be independently controlled to amplify a radio frequency (RF) signal to an output power level for transmission from a mobile wireless device. When controlled to be inactive, at least one of the gain stages can be placed into a low impedance state.
摘要翻译：在一个实施例中，本发明包括耦合到增益级的多个增益级和输出网络。可以独立地控制每个增益级，以将射频（RF）信号放大到用于从移动无线设备传输的输出功率电平。当被控制为无效时，增益级中的至少一个可以被置于低阻抗状态。

6. 发明授权

US08301106B2 Stacked CMOS power amplifier and RF coupler devices and related methods 有权
标题翻译：叠层CMOS功率放大器和射频耦合器件及相关方法
公开(公告)号：US08301106B2
公开(公告)日：2012-10-30
申请号：US12658294
申请日：2010-02-10
申请人： Abhay Misra
发明人： Abhay Misra
IPC分类号： H04B1/28 , H04B1/16
CPC分类号： H03F3/195 , H01L2224/16225 , H01L2224/73265 , H03F3/24 , H03F2200/204 , H03G3/3042 , Y10T29/49117
摘要： Stacked CMOS power amplifier (PA) and radio frequency (RF) coupler devices and related methods are disclosed. The stacked device includes a CMOS PA die configured to receive a transmit input signal and to output an amplified transmit signal, and a RF coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal. The CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other, and the CMOS PA die and the RF coupler device are combined within a single semiconductor package. In some embodiments, the RF coupler device is positioned on top of the CMOS PA die, and in other embodiments the CMOS PA die is positioned on top of the RF coupler device.
摘要翻译：公开了叠层CMOS功率放大器（PA）和射频（RF）耦合器器件及相关方法。叠层器件包括被配置为接收发射输入信号并输出放大的发射信号的CMOS PA管芯，以及被配置为接收放大的发射信号，输出天线发射信号并输出与之成比例的RF信号的RF耦合器装置到天线发射信号。 CMOS PA管芯和RF耦合器件堆叠在彼此之上并电耦合，并且CMOS PA管芯和RF耦合器件在单个半导体封装内组合。在一些实施例中，RF耦合器件位于CMOS PA管芯的顶部，并且在其它实施例中，CMOS PA管芯位于RF耦合器器件的顶部上。

7. 发明授权

US08219049B2 Generating a process and temperature tracking bias voltage 有权
标题翻译：产生过程和温度跟踪偏置电压
公开(公告)号：US08219049B2
公开(公告)日：2012-07-10
申请号：US12578838
申请日：2009-10-14
申请人： Anil Samavedam , David E. Bockelman , Vishnu Srinivasan
发明人： Anil Samavedam , David E. Bockelman , Vishnu Srinivasan
IPC分类号： H04B1/04 , H03G3/20
CPC分类号： H03F1/3205 , H03F1/301 , H03F3/19 , H03F3/245 , H03F3/3022 , H03F2200/447 , H03F2200/451 , H03F2203/30144
摘要： In one embodiment, a method includes generating a current that is proportional to a mobility and an oxide capacitance of a tracking device and independent of a threshold voltage variation of the tracking device, generating a voltage from the current, and providing the voltage as at least part of a bias voltage for another device. In one embodiment, this other device may be a compensation circuit coupled to a main device to compensate for capacitance non-linearity of the main device.
摘要翻译：在一个实施例中，一种方法包括产生与跟踪装置的迁移率和氧化物电容成比例的电流，并且不依赖于跟踪装置的阈值电压变化，从电流产生电压，并将电压提供至少另一个器件偏置电压的一部分。在一个实施例中，该另一个器件可以是耦合到主器件的补偿电路，以补偿主器件的电容非线性。

8. 发明授权

US08116700B2 Reducing common mode effects in an output stage 有权
标题翻译：在输出阶段降低共模效应
公开(公告)号：US08116700B2
公开(公告)日：2012-02-14
申请号：US12619062
申请日：2009-11-16
申请人： Eric Kimball
发明人： Eric Kimball
IPC分类号： H04B1/02 , H03F3/68 , H03F1/00
CPC分类号： H03F3/195 , H03F1/565 , H03F3/211 , H03F3/24 , H03F2200/387 , H03F2200/451 , H03F2200/541 , H03F2203/21139 , H04B1/0458
摘要： In one embodiment, a power amplifier may include an output stage with multiple transformers and corresponding matching capacitances. The capacitances may include a first matching capacitance coupled in parallel with a secondary coil of a first transformer and a second matching capacitance coupled in parallel with a secondary coil of a second transformer, where the secondary coils are coupled in series in an output stack configuration. By accounting for parasitics present in the power amplifier, the first matching capacitance can be designed to have a greater capacitance than the second matching capacitor, even where the first and second transformers are configured to output substantially equal power levels.
摘要翻译：在一个实施例中，功率放大器可以包括具有多个变压器的输出级和相应的匹配电容。电容可以包括与第一变压器的次级线圈并联耦合的第一匹配电容和与第二变压器的次级线圈并联耦合的第二匹配电容，其中次级线圈以输出堆叠配置串联耦合。通过考虑存在于功率放大器中的寄生效应，即使第一和第二变压器被配置为输出基本相等的功率电平，第一匹配电容可被设计成具有比第二匹配电容器更大的电容。

9. 发明授权

US08244194B2 Narrow-band tunable radio frequency (RF) power amplifiers and related methods 有权
标题翻译：窄带可调射频（RF）功率放大器及相关方法
公开(公告)号：US08244194B2
公开(公告)日：2012-08-14
申请号：US12803884
申请日：2010-07-08
申请人： Patrick N. Morgan , Timothy J. Dupuis , David E. Bockelman
发明人： Patrick N. Morgan , Timothy J. Dupuis , David E. Bockelman
IPC分类号： H04B1/18
CPC分类号： H03F3/24 , H03F3/195 , H03F3/45475 , H03F2200/408 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/421 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2203/45544 , H03F2203/45551 , H03F2203/45554 , H03F2203/45631 , H03F2203/45634 , H03F2203/45638 , H03F2203/45641 , H03F2203/45662 , H03F2203/45726
摘要： Narrow band tunable radio frequency (RF) power amplifiers (PAs) and related methods are disclosed that provide narrow band tunable gain responses, such as linear gain responses, that can be selected for different frequency bands. The narrow band tunable PAs thereby provide out-of-band rejection for different selectable frequency bands so that narrow band filters are not required in the transmit input path for communication devices. The pass band location and/or bandwidth for the narrow band gain response can be tuned using different techniques, as desired. The narrow band tunable PAs can also be fabricated using CMOS processing, if desired, so that a CMOS PA integrated circuit is provided.
摘要翻译：公开了窄带可调谐射频（RF）功率放大器（PAs）和相关方法，其提供可以针对不同频带选择的窄带可调增益响应，例如线性增益响应。窄带可调谐PA因此为不同的可选频带提供带外抑制，使得通信设备的发射输入路径中不需要窄带滤波器。可以根据需要使用不同的技术来调整窄带增益响应的通带位置和/或带宽。如果需要，也可以使用CMOS处理来制造窄带可调谐PA，从而提供CMOS PA集成电路。

10. 发明授权

US08022766B2 CMOS power amplifiers having integrated one-time programmable (OTP) memories 有权
公开(公告)号：US08022766B2
公开(公告)日：2011-09-20
申请号：US12657996
申请日：2010-02-01
申请人： Timothy J. Dupuis , Abhay Misra
发明人： Timothy J. Dupuis , Abhay Misra
IPC分类号： H03G3/10
CPC分类号： H03F3/24 , H03F1/0261 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/408 , H03F2200/451
摘要： CMOS power amplifiers (PAs) are disclosed having one or more integrated one-time programming (OTP) memories that are utilized to control at least in part operation of the CMOS PAs. The integrated OTP memories within the CMOS power amplifiers (PAs) allow adjustments, such as one-time factory trimming, of CMOS PA integrated circuits to optimize or improve performance. With this capability, for example, the tuning and biasing of stages within a multi-stage amplifier within a CMOS PA can be measured during factory test and adjusted by setting one or more bits in the OTP memories, as desired. Further, the operation of other circuitry within the PA can also be controlled at least in part with parameter settings stored in the OTP memories.

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