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2. 发明申请

US20070179040A1 Ai203 dispersion-strengthened ti2ain composites and a method and producing the same 失效
标题翻译： Al 2 O 3分散强化Ti 2 AlN复合材料及其制造方法
公开(公告)号：US20070179040A1
公开(公告)日：2007-08-02
申请号：US11629559
申请日：2005-07-15
申请人： Juying Li , Yuyou Cui , Rui Yang
发明人： Juying Li , Yuyou Cui , Rui Yang
IPC分类号： C04B35/582 , C04B35/58
CPC分类号： C04B35/58014 , B82Y30/00 , C04B35/117 , C04B35/6268 , C04B35/645 , C04B35/6455 , C04B2235/3217 , C04B2235/3886 , C04B2235/402 , C04B2235/404 , C04B2235/46 , C04B2235/465 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/6581 , C04B2235/662 , C04B2235/78 , C04B2235/785 , C04B2235/80 , C04B2235/9684
摘要： The invention provides Al2O3 dispersion-strengthened Ti2AlN composites, wherein Ti2AlN matrix and Al2O3 strengthening phase both are reactively formed in situ. The volume fraction of Al2O3 is 5% to 50%; the particle size of Al2O3 ranges from 500 nm to 2 μm, with the mean size of Al2O3 particles about 0.8 μm to 1.2 μm; the shape of Ti2AlN grain is plate-like about 80 nm to 120 nm thick and 0.5 μm to 2 μm long. The composites exhibit excellent deformability at high temperature under compression and flexure stresses, and possess excellent oxidation resistance at 1100° C. to 1350° C. for long time (100 h). The composites show typical metallic conductor behavior and the electrical resistivity at room temperature is 0.3 to 0.8 μΩ·m. The invention also provides a method for preparing the same: First, nanoparticles in Ti—Al binary system were prepared in continuous way by hydrogen plasma-metal reaction (HPMR) using Ti—Al alloy rods with Al content 20% to 60% by atom, or pure Al rods and pure Ti rods. The atmosphere used in HPMR is the mixture atmosphere of nitrogen-containing gas, H2 and Ar, with total pressure of 0.8 to 1.2 atm, wherein volume ratio of H2 and Ar is 1:0.8-1.2, and volume fraction of nitrogen-containing gas is 0 to about 20%. Second, the nanoparticles were compacted by vacuum hot pressing at temperature of 800° C. to 1200° C., pressure of 40 MPa to 60 MPa, time of 4 h to 6 h, and vacuum of 2×10−2 Pa to 5×10−3 Pa.
摘要翻译：本发明提供了Al 2 N 3 O 3分散强化Ti 2 AlN复合材料，其中Ti 2 AlN基体和Al 2N 3 O 3强化相都在原位反应形成。 Al 2 O 3 3的体积分数为5％至50％; Al 2 O 3 3的颗粒尺寸范围为500nm至2μm，平均尺寸为Al 2 O 3 3 < / SUB颗粒约0.8〜1.2μm; Ti 2 AlN晶粒的形状是板状，约80nm至120nm厚，0.5μm至2μm长。复合材料在压缩和挠曲应力下在高温下表现出优异的变形性，并且在1100℃至1350℃长时间（100小时）下具有优异的抗氧化性。复合材料表现出典型的金属导体性能，室温下的电阻率为0.3〜0.8 muOmega.m。本发明还提供了一种制备方法：首先，使用Al含量为20〜60原子％的Ti-Al合金棒，通过氢等离子体 - 金属反应（HPMR）连续制备Ti-Al二元体系中的纳米粒子，或纯Al棒和纯Ti棒。 HPMR中使用的气氛是含氮气体H 2 2和Ar的混合气氛，总压力为0.8至1.2atm，其中H 2 2和 Ar为1：0.8-1.2，含氮气体的体积分数为0〜20％。第二，通过真空热压在800℃至1200℃，40MPa至60MPa的压力，4小时至6小时的时间和2×10 -2真空的压力下压制纳米颗粒， SUP> Pa至5×10 -3 Pa。

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