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    • 1. 发明授权
    • Signaling method and apparatus for write assist of high coercivity media using integrated half coil
    • 使用集成半线圈的高矫顽力介质的写辅助信号方法和装置
    • US08638527B2
    • 2014-01-28
    • US12589042
    • 2009-10-16
    • Luiz M. Franca-NetoBernhard E. KniggePetrus Antonius Van Der Heijden
    • Luiz M. Franca-NetoBernhard E. KniggePetrus Antonius Van Der Heijden
    • G11B5/17
    • G11B5/02G11B5/1278G11B5/3123G11B5/314G11B5/6005G11B5/6064G11B2005/0005
    • A signaling method and apparatus for providing two write assist components for perpendicular thin film heads writing to high coercivity media is disclosed. The two components provided by the present invention include a media writing assist component and a head switching assist component. Circuit wiring configurations and waveforms for driving an auxiliary half coil are disclosed. These include configurations for connecting the auxiliary half coil in parallel with the main data coil, or connecting the auxiliary half coil to the thermal flight control system. Provision for both common mode signals as well as differential mode signals are disclosed. RF sinusoidal waveforms between 1 and 5 GHz have been found suitable for head switching assist functions for either symmetric current feed and common mode current configuration, or asymmetric current feed and differential mode current configuration. RF sinusoidal waveforms between 10 and 50 GHz have been found suitable for media writing assist functions for either asymmetric or symmetric current feed and differential mode configuration. Data derived signals obtained by passing the data pulse train though high pass filtration has been found to provide both head switching assist and media writing assist functionality. Data derived signals can be used with or without the RF signals.
    • 公开了一种用于为垂直薄膜头写入高矫顽力介质的两个写入辅助部件的信令方法和装置。 本发明提供的两个部件包括介质写入辅助部件和磁头切换辅助部件。 公开了用于驱动辅助半线圈的电路布线配置和波形。 这些包括用于将辅助半线圈与主数据线圈并联连接或将辅助半线圈连接到热飞行控制系统的配置。 公开了两种共模信号以及差模信号。 已经发现1到5GHz之间的RF正弦波形适用于对称电流馈电和共模电流配置的头部切换辅助功能,或非对称电流馈电和差分模式电流配置。 已经发现10到50GHz之间的RF正弦波形适用于非对称或对称电流馈送和差分模式配置的介质写入辅助功能。 已经发现通过高通滤波通过数据脉冲串获得的数据导出信号提供了头切换辅助和媒体写入辅助功能。 数据导出信号可以使用或不使用RF信号。
    • 5. 发明申请
    • SPIN-TORQUE OSCILLATOR (STO) FOR MICROWAVE-ASSISTED MAGNETIC RECORDING (MAMR) AND METHODS OF USE THEREOF
    • 用于微波辅助磁记录(MAMR)的旋转振荡器(STO)及其使用方法
    • US20130215530A1
    • 2013-08-22
    • US13401650
    • 2012-02-21
    • Masukazu IgarashiMasato MatsubaraKeiichi NagasakaMasato Shiimoto
    • Masukazu IgarashiMasato MatsubaraKeiichi NagasakaMasato Shiimoto
    • G11B5/02
    • G11B5/3133G11B5/1278G11B2005/0024
    • In one embodiment, a magnetic data storage system includes a main pole power supply adapted for supplying an excitation current to a main pole coil, a microwave-assisted magnetic recording (MAMR) device including a spin-torque oscillator (STO) element, the STO element having a field generation layer (FGL) and a polarization layer, a timing-control circuit adapted for determining a duration of a main pole magnetic moment inversion process and signaling a start of the main pole magnetic moment inversion process, and a current-regulating circuit comprising an STO power supply adapted for supplying current to the STO element, wherein the STO power supply prevents degradation of a single rotating magnetic domain structure in the FGL into a closure magnetic domain structure in the FGL. Other systems and methods for preventing degradation of the single rotating magnetic domain structure in the FGL into a closure magnetic domain structure are described for more embodiments.
    • 在一个实施例中,磁数据存储系统包括适于向主极线圈提供激励电流的主极电源,包括自旋转矩振荡器(STO)元件的微波辅助磁记录(MAMR)器件,STO 具有场产生层(FGL)和偏振层的元件,定时控制电路,用于确定主极磁矩反转处理的持续时间并发出主极磁矩反转处理的开始,以及电流调节 包括适于向STO元件提供电流的STO电源的电路,其中STO电源防止FGL中的单个旋转磁畴结构的劣化成为FGL中的闭合磁畴结构。 对于更多实施例,描述了用于防止FGL中的单个旋转磁畴结构退化成闭合磁畴结构的其它系统和方法。
    • 9. 发明申请
    • TUNNELING MAGNETORESISTANCE (TMR) READ SENSOR WITH A LONG DIFFUSION PATH AND EX-SITU INTERFACES IN A SENSE LAYER STRUCTURE
    • TUNNELING MAGNETORESISTANCE(TMR)阅读传感器与长扩散路径和EX-SITU接口在感觉层结构
    • US20130164562A1
    • 2013-06-27
    • US13335642
    • 2011-12-22
    • Tsann Lin
    • Tsann Lin
    • G11B5/39H01F7/06
    • G11B5/3906G01R33/098G11B5/3163G11B5/3909G11B5/398G11B5/40H01F10/3254H01F10/3295Y10T29/4902Y10T428/1114Y10T428/1121Y10T428/1143
    • The invention provides a tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure. The sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, and a third sense layer preferably formed of a ferromagnetic Ni—Fe film. The sense layer structure has a long diffusion path (defined as a total thickness of the first and second sense layers) and ex-situ interfaces for suppressing unwanted diffusions of Ni atoms. Alternatively, the sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, a third sense layer preferably formed of a ferromagnetic Co—Fe—B—Hf film, and a fourth sense layer preferably formed of a ferromagnetic Ni—Fe film.
    • 本发明提供了一种在感应层结构中具有长扩散路径和非原位界面的隧道磁阻(TMR)读取传感器。 感测层结构包括优选由铁磁Co-Fe膜形成的第一感测层,优选由铁磁性Co-Fe-B膜形成的第二感测层和优选由铁磁性Ni-Fe膜形成的第三感测层。 感应层结构具有长的扩散路径(定义为第一和第二感测层的总厚度)和用于抑制Ni原子的不期望的扩散的非原位界面。 或者,感测层结构包括优选由铁磁性Co-Fe膜形成的第一感测层,优选由铁磁性Co-Fe-B膜形成的第二感测层,优选由铁磁性Co-Fe-B膜形成的第三感测层, B-Hf膜,以及优选由铁磁性Ni-Fe膜形成的第四感测层。