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1. 发明申请

US20070116406A1 Switch 审中-公开
标题翻译：开关
公开(公告)号：US20070116406A1
公开(公告)日：2007-05-24
申请号：US11603063
申请日：2006-11-22
申请人： Yu Yonezawa , Naoyuki Mishima , Tadashi Nakatani , Anh Nguyen , Satoshi Ueda
发明人： Yu Yonezawa , Naoyuki Mishima , Tadashi Nakatani , Anh Nguyen , Satoshi Ueda
IPC分类号： G02B6/26
CPC分类号： B81B3/0086 , B81B2201/018 , G02B6/3566 , G02B6/357 , G02B6/3584 , H01H59/0009 , H01H2059/0054
摘要： A switch includes multiple torsion springs with each of one ends thereof secured to a substrate, a beam portion, to which each of the other ends of the multiple torsion springs is secured, and which is swung by an electrostatic actuator, and a switch contact portion in which a first contact provided at the beam portion and a second contact secured to the substrate are in connection or disconnection.
摘要翻译：开关包括多个扭转弹簧，其一端中的每一个固定到基底，梁部分，多个扭转弹簧的另一端的每个固定到所述梁部分，并且由静电致动器摆动，并且开关接触部分其中设置在所述梁部分处的第一触点和固定到所述基板的第二触头是连接或断开的。

2. 发明申请

US20070096597A1 Piezoelectric thin-film resonator and filter 有权
标题翻译：压电薄膜谐振器和滤波器
公开(公告)号：US20070096597A1
公开(公告)日：2007-05-03
申请号：US11586731
申请日：2006-10-26
申请人： Shinji Taniguchi , Tsuyoshi Yokoyama , Motoaki Hara , Takeshi Sakashita , Jun Tsutsumi , Masafumi Iwaki , Tokihiro Nishihara , Masanori Ueda
发明人： Shinji Taniguchi , Tsuyoshi Yokoyama , Motoaki Hara , Takeshi Sakashita , Jun Tsutsumi , Masafumi Iwaki , Tokihiro Nishihara , Masanori Ueda
IPC分类号： H01L41/08
CPC分类号： H03H9/132 , H03H3/02 , H03H9/02133 , H03H9/173 , H03H9/568 , H03H2003/021
摘要： A piezoelectric thin-film resonator includes a lower electrode formed on a substrate to define a rounded dome-shaped cavity between the lower electrode and the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. A membrane region is an overlapping region of the lower electrode and the upper electrode interposing the piezoelectric film and a projected area of the cavity onto the substrate includes the membrane region.
摘要翻译：压电薄膜谐振器包括形成在基板上的下电极，以在下电极和基板之间限定圆顶形空腔，设置在下电极上的压电薄膜和设置在压电薄膜上的上电极。膜区域是下电极的重叠区域，并且插入压电膜的上电极，并且空腔的投影面积包括膜区域。

3. 发明申请

US20040212453A1 Duplexer 失效
标题翻译：双工器
公开(公告)号：US20040212453A1
公开(公告)日：2004-10-28
申请号：US10830023
申请日：2004-04-23
申请人： FUJITSU MEDIA DEVICES LIMITED & FUJITSU LIMITED
发明人： Jun Tsutsumi , Shogo Inoue , Takashi Matsuda , Masanori Ueda
IPC分类号： H03H009/70
CPC分类号： H03H9/0576 , H03H3/08 , H03H9/0038 , H03H9/6483 , H03H9/72 , H03H9/725
摘要： A duplexer includes a ladder filter and a multimode filter that are formed on the same surface of a predetermined substrate. In this duplexer, a first comb-like electrode of the ladder filter and a second comb-like electrode of the multimode filter have the same layer structure with the same film thickness. The first comb-like electrode and the second comb-like electrode are formed with single-layer films mainly containing aluminum. The relationship among the film thickness h of the first comb-like electrode and the second comb-like electrode, the center frequency f1 of the frequency band of the ladder filter, and the center frequency f2 of the frequency band of the multimode filter, is expressed as:300nullhnullf1null480300nullhnullf2null430.
摘要翻译：双工器包括形成在预定基板的相同表面上的梯形滤波器和多模式滤波器。在该双工器中，梯形滤波器的第一梳状电极和多模滤波器的第二梳状电极具有相同的膜厚度的相同的层结构。第一梳状电极和第二梳状电极由主要含有铝的单层膜形成。第一梳状电极和第二梳状电极的膜厚度h，梯形滤波器的频带的中心频率f1和多模式滤波器的频带的中心频率f2之间的关系是表示为：300 <= hxf1 <= 480 300 <= hxf2 <= 430。

4. 发明申请

US20070210676A1 Elastic boundary wave device 审中-公开
标题翻译：弹性边界波装置
公开(公告)号：US20070210676A1
公开(公告)日：2007-09-13
申请号：US11714157
申请日：2007-03-06
申请人： Satoru Matsuda , Michio Miura , Takashi Matsuda , Masanori Ueda
发明人： Satoru Matsuda , Michio Miura , Takashi Matsuda , Masanori Ueda
IPC分类号： H01L41/00
CPC分类号： H03H9/0222 , H03H9/02818
摘要： An elastic boundary wave device includes a first medium with piezoelectricity, an electrode exciting an elastic wave and provided on the first medium, a second medium made of a different material from the first medium and provided on the first medium to cover the electrode, and a sound absorbing portion provided on the second medium.
摘要翻译：弹性边界波装置包括具有压电性的第一介质，激发弹性波并设置在第一介质上的电极，由与第一介质不同的材料制成并设置在第一介质上以覆盖电极的第二介质，以及设在第二介质上的吸音部。

5. 发明申请

US20070279154A1 Filter having multiple piezoelectric thin-film resonators 有权
标题翻译：具有多个压电薄膜谐振器的滤波器
公开(公告)号：US20070279154A1
公开(公告)日：2007-12-06
申请号：US11806129
申请日：2007-05-30
申请人： Shinji Taniguchi , Tsuyoshi Yokoyama , Motoaki Hara , Takeshi Sakashita , Jun Tsutsumi , Masafumi Iwaki , Tokihiro Nishihara , Masanori Ueda , Hisanori Ehara
发明人： Shinji Taniguchi , Tsuyoshi Yokoyama , Motoaki Hara , Takeshi Sakashita , Jun Tsutsumi , Masafumi Iwaki , Tokihiro Nishihara , Masanori Ueda , Hisanori Ehara
IPC分类号： H03H9/58 , H03H9/54
CPC分类号： H03H9/605 , H03H3/02 , H03H9/02118 , H03H9/02141 , H03H9/132 , H03H9/173 , H03H9/174 , H03H2003/021
摘要： A filter includes multiple piezoelectric thin-film resonators each having a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the lower electrode, and an upper electrode provided on the piezoelectric film so that the upper electrode and the lower electrode face each other across the piezoelectric film. The multiple piezoelectric thin-film resonators include a first resonator in which at least a part of an outer curved portion of the piezoelectric film of the first resonator is located further out than an outer curved portion of a region in which the upper electrode and the lower electrode face each other across the piezoelectric film. The multiple piezoelectric thin-film resonators includes a second resonator in which at least a part of an outer curved portion of the piezoelectric film of the second resonator substantially coincides with an outer curved portion of a region in which the upper electrode and the lower electrode face each other across the piezoelectric film or is further in than the outer curved portion of the region.
摘要翻译：滤波器包括多个压电薄膜谐振器，每个压电薄膜谐振器均具有基板，形成在基板上的下电极，形成在下电极上的压电薄膜和设置在压电薄膜上的上电极，使得上电极和下电极面彼此横跨压电薄膜。多个压电薄膜谐振器包括：第一谐振器，其中第一谐振器的压电膜的外弯曲部分的至少一部分位于比上电极和下电极的区域的外弯曲部分更远的位置电极彼此面对压电薄膜。多个压电薄膜谐振器包括第二谐振器，其中第二谐振器的压电膜的外部弯曲部分的至少一部分基本上与上电极和下电极面的区域的外弯曲部分重合彼此隔着压电膜，或者比该区域的外部弯曲部分进一步。

6. 发明申请

US20040251792A1 Surface acoustic wave element, and surface acoustic wave device including the same 有权
标题翻译：表面声波元件和包括其的表面声波器件
公开(公告)号：US20040251792A1
公开(公告)日：2004-12-16
申请号：US10852104
申请日：2004-05-25
申请人： Fujitsu Media Devices Limited & Fujitsu Limited
发明人： Takashi Matsuda , Jun Tsutsumi , Shogo Inoue , Masanori Ueda
IPC分类号： H03H009/145
CPC分类号： H03H9/1071 , H03H9/02984 , H03H9/14538
摘要： A surface acoustic wave element includes: metal patterns that include interdigital transducers, each of the metal patterns being formed with a first alloy or multi-layer film of metals having different standard electrode potentials; and metal films each formed with a second alloy or multi-layer film containing metals having different standard electrode potentials from the standard electrode potentials of the metals forming the first alloy or multi-layer film, the metal films being formed at least on a part of the regions other than the regions corresponding to the electrode fingers of the interdigital transducers of all the metal patterns that are electrically independent of one another.
摘要翻译：表面声波元件包括：包括叉指式换能器的金属图案，每个金属图案由具有不同标准电极电位的金属的第一合金或多层膜形成; 以及金属膜，其各自由形成第一合金或多层膜的金属的标准电极电位的第二合金或多层膜形成，所述第二合金或多层膜含有不同标准电极电位的金属，所述金属膜至少形成在除了对应于彼此电独立的所有金属图案的叉指换能器的电极指的区域之外的区域。

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