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1. 发明授权

US08206778B2 Method of manufacturing a magnetic recording medium 失效
标题翻译：制造磁记录介质的方法
公开(公告)号：US08206778B2
公开(公告)日：2012-06-26
申请号：US12656571
申请日：2010-02-03
申请人： Kouichi Tsuda
发明人： Kouichi Tsuda
IPC分类号： C25D5/02 , G11B5/84 , G09B5/02 , G11B5/82
CPC分类号： G11B5/82 , B82Y10/00 , C25D1/006 , C25D3/12 , C25D3/66 , C25D5/003 , C25D5/006 , C25D5/02 , C25D5/48 , C25D5/50 , C25D7/001 , C25D11/045 , G11B5/743 , G11B5/855 , Y10T29/49043
摘要： A method of manufacturing a magnetic recording medium includes the steps of forming an intermediate layer that is electrically conductive over a non-magnetic substrate; forming an aluminum-containing layer on the intermediate layer; forming a plurality of micro pits in the aluminum-containing layer; generating an alumina-containing layer by anode oxidation of the aluminum-containing layer and simultaneously forming a plurality of nano holes in the alumina-containing layer originating from the plurality of micro pits respectively to expose the intermediate layer; cleaning and drying the plurality of nano holes using a fluid selected from the group consisting of a sub- and super-critical carbon dioxide fluid; and depositing a magnetic metal selectively through the plurality of nano holes on the intermediate layer to form a plurality of magnetic recording elements that collectively form a magnetic recording layer.
摘要翻译：制造磁记录介质的方法包括以下步骤：在非磁性基底上形成导电的中间层; 在中间层上形成含铝层; 在所述含铝层中形成多个微凹坑; 通过所述含铝层的阳极氧化产生含氧化铝层，同时在来自所述多个微凹坑的含氧化铝层中分别形成多个纳米孔以暴露所述中间层; 使用选自亚临界和超临界二氧化碳流体的流体清洁和干燥多个纳米孔; 以及通过所述中间层上的所述多个纳米孔选择性地沉积磁性金属，以形成共同形成磁记录层的多个磁记录元件。

2. 发明授权

US08094395B2 Magnetic transfer method and magnetic recording medium 失效
标题翻译：磁转移方式和磁记录介质
公开(公告)号：US08094395B2
公开(公告)日：2012-01-10
申请号：US12828164
申请日：2010-06-30
申请人： Narumi Sato
发明人： Narumi Sato
IPC分类号： G11B5/86
CPC分类号： G11B5/865
摘要： A magnetic transfer method includes a conjoined body formation step of stacking a transfer master storing transfer information on a transfer receiving body. Air between contact surfaces of the transfer master and transfer receiving body is pushed out in the direction of a non-pressurized area by pressurizing the stacked transfer master and transfer receiving body, to form the conjoined body. The method further includes a transfer step of, by bringing a magnetic field generating module close to the conjoined body, and applying a magnetic field, carrying out a magnetic transfer of the transfer information from the transfer master to the transfer receiving body. A surface roughness of smooth portions of the transfer master in which no transfer information is formed, and the surface roughness of the transfer receiving body, is 1 nm or less.
摘要翻译：磁转移方法包括将转印主体存储在转印接收体上的结合体形成步骤。转印母版和转印支承体的接触表面之间的空气通过对堆叠的转印母版和转印接受体加压而在非加压区域的方向上被推出，形成结合体。该方法还包括通过使磁场产生模块靠近结合体并且施加磁场的传送步骤，执行将传送信息从传送主机传送到传送接收体。不存在转印信息的转印母版的平滑部分的表面粗糙度和转印接受体的表面粗糙度为1nm以下。

3. 发明授权

US07985630B2 Method for manufacturing semiconductor module 有权
公开(公告)号：US07985630B2
公开(公告)日：2011-07-26
申请号：US12926304
申请日：2010-11-09
申请人： Masafumi Horio , Tatsuo Nishizawa , Eiji Mochizuki , Rikihiro Maruyama
发明人： Masafumi Horio , Tatsuo Nishizawa , Eiji Mochizuki , Rikihiro Maruyama
IPC分类号： H01L21/00
CPC分类号： H01L25/072 , H01L23/3121 , H01L2224/32225 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/3511 , H01L2924/00
摘要： A method for manufacturing a semiconductor module, includes the steps of preparing a board; mounting a semiconductor device on the second metal foil; placing a resin case onto the board for surrounding a first metal foil, an insulating sheet, the second metal foil, and the semiconductor device; pouring a resin in a paste form into the case to fill a space relative to the first metal foil, insulating sheet, the second metal foil and the semiconductor device; and heat-curing the resin. A bottom end of a peripheral wall of the case is located above a bottom surface of the first metal. The bottom surface of the first metal foil and the resin form a flat bottom surface to contact an external mounting member.

4. 发明授权

US07977704B2 Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor 有权
标题翻译：具有绝缘栅极半导体元件和绝缘栅双极晶体管的半导体器件
公开(公告)号：US07977704B2
公开(公告)日：2011-07-12
申请号：US12320497
申请日：2009-01-27
申请人： Masaki Koyama , Yoshifumi Okabe , Makoto Asai , Takeshi Fujii , Koh Yoshikawa
发明人： Masaki Koyama , Yoshifumi Okabe , Makoto Asai , Takeshi Fujii , Koh Yoshikawa
IPC分类号： H01L29/739
CPC分类号： H01L29/7395 , H01L29/0619 , H01L29/0696 , H01L29/402 , H01L29/407 , H01L29/4238 , H01L29/66348 , H01L29/7397
摘要： A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter electrode; and a collector electrode. The one base part provides a channel layer, and another base part provides a float layer having no emitter region. The gate element includes a gate electrode next to the channel layer and a dummy gate electrode next to the float layer. The float layer includes a first float layer adjacent to the channel layer and a second float layer apart from the channel layer. The dummy gate electrode and the first float layer are coupled with a first float wiring on the base layer. The dummy gate electrode is isolated from the second float layer.
摘要翻译：具有IGBT的半导体器件包括：基板; 衬底上的漂移层和基底层; 穿过基层的沟槽将基层分成基部; 一个基部的发射极区域; 沟槽中的栅极元件; 发射极; 和集电极。一个基座部分提供通道层，而另一个基座部件提供没有发射极区域的浮动层。栅极元件包括靠近沟道层的栅极电极和与浮置层相邻的伪栅极电极。浮子层包括与沟道层相邻的第一浮动层和与沟道层分开的第二浮体层。虚拟栅电极和第一浮动层与基层上的第一浮动布线耦合。虚拟栅电极与第二浮动层隔离。

5. 发明申请

US20110163372A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110163372A1
公开(公告)日：2011-07-07
申请号：US13049463
申请日：2011-03-16
申请人： Noriyuki IWAMURO
发明人： Noriyuki IWAMURO
IPC分类号： H01L27/07
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/66734 , H01L29/7804 , H01L29/7805 , H01L29/7808 , H01L29/7813
摘要： A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are located on both sides of the above n-type semiconductor layer. A region where a source electrode is in contact with a channel layer is formed over the n-type semiconductor layer. A portion where the high-concentration region is in contact with the channel layer functions as a diode. The breakdown voltage of the diode is set lower than that of the device.
摘要翻译：以这样的方式配置超结半导体衬底，使得并联pn结构的n型半导体层与有源区和外围抗击结构区之间的边界区域相对。在位于上述n型半导体层的两侧的p型半导体层之间的中心处形成高浓度区域。在n型半导体层上形成有源极与沟道层接触的区域。高浓度区域与沟道层接触的部分用作二极管。二极管的击穿电压设置为低于器件的击穿电压。

6. 发明申请

US20110103101A1 INTEGRATED CONTROL CIRCUIT FOR CONTROLLING A SWITCHING POWER SUPPLY, SWITCHING POWER SUPPLY INCORPORATING THE SAME, AND A METHOD OF CONTROLLING A SWITCHING POWER SUPPLY 有权
标题翻译：用于控制切换电源的集成控制电路，与其同时开关的电源以及控制切换电源的方法
公开(公告)号：US20110103101A1
公开(公告)日：2011-05-05
申请号：US12033720
申请日：2008-02-19
申请人： NOBUYUKI HIASA
发明人： NOBUYUKI HIASA
IPC分类号： H02M3/335
CPC分类号： H02M3/33507 , H02M1/32
摘要： An integrated control circuit for controlling a switching power supply, a switching power supply incorporating the same, and a method of controlling the switching power supply, where the control IC includes a current comparator that detects current flowing through a switching device, a flip-flop circuit that controls the ON-period of the switching device, an averaging circuit that converts the peak load current value to a time-average, a comparator that detects an overloaded state from the load current, a delay circuit that sets a time from detecting the overcurrent state to stopping the switching operation, a latch circuit that stops the switching operation for a period of time, a first reference voltage supply used in the current comparator, which has a higher voltage value than a second reference voltage supply used in the comparator.
摘要翻译：一种用于控制开关电源的集成控制电路，包括其的开关电源以及控制开关电源的方法，其中控制IC包括检测流过开关器件的电流的电流比较器，触发器控制开关装置的导通周期的电路，将峰值负载电流值转换为时间平均的平均电路，从负载电流检测过载状态的比较器，设定从检测到的负载电流的时间的延迟电路用于停止开关操作的过电流状态，在一段时间内停止开关操作的锁存电路，在电流比较器中使用的第一参考电压电源，其具有比在比较器中使用的第二参考电压电源更高的电压值。

7. 发明申请

US20110096640A1 METHOD OF DRAWING A PATTERN FOR MAGNETIC TRANSFER 失效
标题翻译：绘制磁性传输图案的方法
公开(公告)号：US20110096640A1
公开(公告)日：2011-04-28
申请号：US12910181
申请日：2010-10-22
申请人： Hiroto KIKUCHI
发明人： Hiroto KIKUCHI
IPC分类号： G11B11/08
CPC分类号： G11B9/10 , G11B5/855 , G11B5/865
摘要： A method of drawing a pattern for magnetic transfer on a substrate, including the steps of rotating the substrate and scanning the substrate, by an electron beam, in a circumferential direction thereof, deflecting, using a deflection signal, the electron beam in a radial direction thereof, and switching irradiation of the electron beam on and off, so as to create the pattern of a plurality of dots.
摘要翻译：一种在基板上绘制磁转移图案的方法，包括以电子束在其圆周方向上旋转基板并扫描基板的步骤，使用偏转信号沿径向方向偏转电子束并且打开和关闭电子束的照射，以产生多个点的图案。

8. 发明授权

US07888173B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07888173B2
公开(公告)日：2011-02-15
申请号：US12382412
申请日：2009-03-12
申请人： Harutaka Taniguchi , Yoshinari Ikeda
发明人： Harutaka Taniguchi , Yoshinari Ikeda
IPC分类号： H01L21/00
CPC分类号： H05K3/34 , H01L23/5385 , H01L24/01 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/83 , H01L24/91 , H01L25/072 , H01L25/50 , H01L2224/26145 , H01L2224/27013 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/83051 , H01L2224/83101 , H01L2224/83365 , H01L2224/838 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0135 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/157 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H05K1/145 , H05K2201/10166 , H05K2201/10303 , H05K2201/1059 , H05K2201/10962 , H05K2201/10969 , H05K2203/0405 , H01L2924/00 , H01L2924/07025 , H01L2924/01083 , H01L2924/01049 , H01L2924/01028
摘要： A semiconductor device manufacturing method includes the steps of preparing a semiconductor element having a first electrode, a second electrode, and a third electrode facing the first electrode and second electrode, the first electrode and second electrode being electrically separated by an insulating layer; arranging a first conductive bonding material on a first metal foil and placing the semiconductor element on the first conductive bonding material; supporting a sheet-shape second conductive bonding material by the insulating layer; arranging a first post electrode and a second post electrode above the first and second electrodes respectively with the second conductive bonding material intervening therebetween; and forming a first conductive bonding layer for bonding the first electrode and the first post electrode, a second conductive bonding layer for bonding the second electrode and the second post electrode, and a third conductive bonding layer for bonding the third electrode and the first metal foil.
摘要翻译：半导体器件制造方法包括以下步骤：制备具有第一电极，第二电极和与第一电极和第二电极相对的第三电极的半导体元件，第一电极和第二电极通过绝缘层电隔离; 在第一金属箔上布置第一导电接合材料并将半导体元件放置在第一导电接合材料上; 通过绝缘层支撑片状第二导电接合材料; 在所述第一和第二电极上方分别设置第一电极和第二电极，所述第二电极和第二电极分别与所述第二电极和所述第二电极之间插入所述第二电极和第二电极。以及形成用于接合所述第一电极和所述第一电极的第一导电接合层，用于接合所述第二电极和所述第二电极的第二导电接合层，以及用于接合所述第三电极和所述第一金属箔的第三导电接合层。

9. 发明授权

US07875374B2 Substrate for perpendicular magnetic recording media and perpendicular magnetic recording media using same 有权
标题翻译：用于垂直磁记录介质的基板和使用其的垂直磁记录介质
公开(公告)号：US07875374B2
公开(公告)日：2011-01-25
申请号：US12120528
申请日：2008-05-14
申请人： Hiroshi Minazawa
发明人： Hiroshi Minazawa
IPC分类号： G11B5/82 , G11B5/64
CPC分类号： G11B5/7315
摘要： Substrates for perpendicular magnetic recording media, and perpendicular magnetic recording media using such substrates, are disclosed. By setting the substrate inclination angle, or a parameter related to substrate shape relating to this angle, within an appropriate range, magnetic recording media can be obtained with excellent read signal quality and signal quality stability, regardless of the final substrate machining method. In a substrate for donut-shape magnetic recording media, comprising a main surface, an inner circumferential surface extending along the inside of the main surface, and an outer circumferential surface extending along the outside of the main surface, when the shape of the main surface is defined by a function Z(x,y) of x-y coordinates, the root mean square inclination angle (θsΔq), defined as the inverse tangent (tan−1 (sΔq)) of the root means square inclination (sΔq) which is the root mean square over the entire main surface of the micro-region surface inclination (Δρ) of the main surface, expressed by the following equation, is 5° or less Equation ⁢ ⁢ 1 ⁢ Δ ⁢ ⁢ ρ = [ ( ∂ z ⁡ ( x , y ) ∂ x ) 2 + ( ∂ z ⁡ ( x , y ) ∂ y ) 2 ] 1 2 .
摘要翻译：公开了用于垂直磁记录介质的基板和使用这种基板的垂直磁记录介质。通过将基板倾斜角度或与该角度有关的基板形状的参数设定在适当的范围内，无论最终的基板加工方法如何，都可以获得具有良好的读取信号质量和信号质量稳定性的磁记录介质。在一种用于环形磁记录介质的基片中，包括主表面，沿着主表面内部延伸的内圆周表面和沿着主表面的外侧延伸的外圆周表面，当主表面由xy坐标的函数Z（x，y）定义，根均方根倾角（＆amp; s; s＆Dgr; q）被定义为根的平方斜度的反正切（tan-1（s＆Dgr; q））作为主表面的微区域表面倾斜（＆Dgr;＆rgr）的整个主表面的均方根（s＆Dgr; q），由下式表示，为5°以下。＆Dgr 唔＆rgr = [（∂z⁡（x，y）∂x）2 +（∂z⁡（x，y）∂y）2] 1 2。

10. 发明申请

US20110000879A1 METHOD OF MANUFACTURING A MASTER INFORMATION CARRIER FOR MAGNETIC TRANSFER AND A METHOD OF MANUFACTURING A MAGNETIC RECORDING MEDIUM 审中-公开
标题翻译：用于磁传输的主信息载体的制造方法和制造磁记录介质的方法
公开(公告)号：US20110000879A1
公开(公告)日：2011-01-06
申请号：US12829747
申请日：2010-07-02
申请人： Satomi Kajiwara
发明人： Satomi Kajiwara
IPC分类号： G11B5/84
CPC分类号： G11B5/855 , G11B5/865
摘要： A method of easily manufacturing a master disk for magnetic transfer is disclosed. The method of the invention facilitates separation of the master disk and a slave disk to be transferred even after conducting a magnetic transfer process after adhering the two disks by pressing or exhaustion for the purpose of enhancing transfer performance. A method of manufacturing a master disk comprises a step of forming recesses by eliminating selected parts of a surface region of soft magnetic layer 20 that is uniformly formed on the surface of substrate 10, to a depth not to cut apart the parts with one another, and a step of transforming recessed parts 20b to a nonmagnetic or low magnetic state. The steps forms a pattern of protrusions 20a and recesses 20b corresponding to information to be magnetically transferred, the protrusions 20a being magnetic and the recesses 20b being nonmagnetic or low magnetic.
摘要翻译：公开了一种容易制造用于磁转移的母盘的方法。为了提高转印性能，本发明的方法有利于在通过按压或排出粘合两个盘之后进行磁转移处理后的主盘和从属盘的分离。制造母盘的方法包括通过消除均匀地形成在基板10的表面上的软磁性层20的表面区域的选定部分而形成凹部的步骤，使得彼此不分开这些部分的深度，以及将凹部20b变形为非磁性或低磁性状态的步骤。这些台阶形成对应于要被磁性传递的信息的突起20a和凹槽20b的图案，突起20a是磁性的，凹槽20b是非磁性的或低磁性的。

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