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1. 发明授权

US11156507B2 Method and device for detecting the temperature of the vibrating element of an ultrasonic converter 有权
公开(公告)号：US11156507B2
公开(公告)日：2021-10-26
申请号：US16264914
申请日：2019-02-01
申请人： Elmos Semiconductor AG
发明人： Egbert Spiegel
IPC分类号： G01K11/22 , G01K11/26 , G10K11/02 , G01H11/04 , G01K7/20 , A61B8/00 , G01K7/34 , G01H13/00 , B06B1/06
摘要： Disclosed is a method for detecting a value which represents the temperature of a vibrating element of an ultrasonic transducer. The ultrasonic transducer has a resonant frequency (fr). The method comprises the steps of operating the ultrasonic transducer with an electric measuring signal at a measuring frequency (fm) which is above the resonant frequency, and of detecting the absolute value of the complex impedance of the ultrasonic transducer at this measuring frequency (fm) and, building thereon, ascertaining the desired value, which is to represent the temperature of a vibrating element of an ultrasonic transducer, as a function of the detected absolute value of the complex impedance of the ultrasonic transducer at this measuring frequency (fm).

2. 发明授权

US10678620B2 Watchdog for monitoring a processor 有权
公开(公告)号：US10678620B2
公开(公告)日：2020-06-09
申请号：US16332278
申请日：2017-09-19
申请人： Elmos Semiconductor AG
发明人： Andre Sudhaus , Tan Subijanto
IPC分类号： G06F11/00 , G06F11/07 , B60R21/01
摘要： The disclosure relates to a watchdog for monitoring a processor. The watchdog sends messages to the processor which subsequently sends back its own status information and optionally the status information of system components and the test results thereof at predetermined times as answers to the watchdog. The watchdog comprises at least one result memory in the form of, e.g., a shift register in which the watchdog records the history of the answers and examines patterns in erroneous answers. The recording is generated by a trigger event which can be the reception of individual answers and/or the end of scheduled reception time periods. According to the patterns, signalizations are carried out on the processor and/or other system components, which optionally introduce measures and adapt their structure and/or the implemented programs and/or the priority of said implementations.

3. 发明授权

US10361996B2 Serial bus auto-addressing 有权
公开(公告)号：US10361996B2
公开(公告)日：2019-07-23
申请号：US16137562
申请日：2018-09-21
申请人： Elmos Semiconductor AG
发明人： Christian Schmitz , Bernd Burchard
IPC分类号： G06F3/00 , H04L29/12 , G06F13/42 , H04L12/40 , H04L12/10
摘要： A bus node is capable of performing a method for the assigning of bus node addresses to bus nodes of a serial data bus. The method is performed with the aid of bus shunt resistors in the individual bus nodes of the data bus system in an assignment time period. After the assigning of bus node addresses to the bus nodes in the assignment time period, there follows an operating time period. For this purpose, the bus node comprises such a bus shunt resistor. The bus node is characterized by a bus shunt bypass switch which, prior to assigning a bus node address to the bus node in the assignment time period is opened and which after the assignment of bus node address to the bus node in the assignment time period is closed, and which is closed in the operating time period.

4. 发明授权

US10317443B2 Integrated capacitance measurement 有权
公开(公告)号：US10317443B2
公开(公告)日：2019-06-11
申请号：US15686293
申请日：2017-08-25
申请人： Elmos Semiconductor AG
发明人： Norbert Raehse
IPC分类号： G01R27/26 , H03B5/20
摘要： An apparatus for measuring the capacitance to be measured is proposed. It comprises a first sine-wave oscillator, the measuring oscillator, and a second sine-wave oscillator, the reference oscillator. The frequency of the output signal of the measuring oscillator, hereinafter also referred to as measuring frequency, is dependent on the capacitance to be measured. The frequency of the output signal of the reference oscillator, hereinafter also referred to as reference frequency, is dependent on a reference capacitance. The apparatus comprises a sub-apparatus which produces the ratio of the frequency value of the frequency of the output signal of the reference oscillator and the frequency value of the frequency of the output signal of the measuring oscillator and subsequently squares this ratio to provide the result of this squaring as a measured value.

5. 发明授权

US09829382B2 Device for operating passive infrared sensors 有权
公开(公告)号：US09829382B2
公开(公告)日：2017-11-28
申请号：US14647906
申请日：2013-10-21
申请人： Elmos Semiconductor AG
发明人： Artur Suntken
IPC分类号： G01J5/10 , G01J1/46 , H03M1/12 , G08B13/191 , H03M3/00
CPC分类号： G01J5/10 , G01J1/46 , G08B13/191 , H03M1/12 , H03M3/424 , H03M3/458
摘要： A system for measuring a sensor having two terminals includes first and second transistors with first and second control signal inputs connected to the sensor terminals. The system further includes a current divider including a reference current input, a current divider control input and first and second current outputs connected to the first and second transistors. First and second load circuits are connected to the first and second transistors at first and second differential output nodes. First and second integrator circuits are connected to the first and second differential output nodes. A comparator is driven by first and second differential output nodes. The comparator output controls a digital filter. A value of the a current divider control signal driving the current divider control input depends at least indirectly from the digital filter output.

6. 发明授权

US09403677B2 Micro-electromechanical semiconductor component 有权
标题翻译：微机电半导体元件
公开(公告)号：US09403677B2
公开(公告)日：2016-08-02
申请号：US14631064
申请日：2015-02-25
申请人： Elmos Semiconductor AG
发明人： Michael Doelle
IPC分类号： B81B7/02 , B81C1/00 , G01L9/00 , B81B3/00 , H01L29/49 , H01L29/84
CPC分类号： B81C1/00158 , B81B3/0018 , B81B3/0021 , B81B3/007 , B81B3/0072 , B81B3/0081 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81C1/00626 , B81C99/0035 , B81C2201/019 , G01L9/0047 , H01L29/4916 , H01L29/84
摘要： The micro-electromechanical semiconductor component is provided with a semiconductor substrate (4, 5), a reversibly deformable bending element (8a) made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses, said transistor being designed as an integrated component in the bending element (8a). The transistor is arranged in an implanted active region pan (78a) that is made of a semiconductor material of a first conducting type and is introduced in the bending element (8a). Two mutually spaced, implanted drain and source regions (79, 80) made of a semiconductor material of a second conducting type are designed in the active region pan (78a), a channel region extending between said two regions. Implanted feed lines made of a semiconductor material of the second conducting type lead to the drain and source regions (79, 80). The upper face of the active region pan (78a) is covered by a gate oxide (81a). In the area of the channel region, a gate electrode (81) made of polysilicon is located on the gate oxide (81a), a feed line likewise made of polysilicon leading to said gate electrode.
摘要翻译：微机电半导体部件设置有半导体基板（4,5），由半导体材料制成的可逆变形的弯曲元件（8a）和至少一个对机械应力敏感的晶体管，所述晶体管被设计为集成弯曲元件（8a）中的部件。晶体管布置在由第一导电类型的半导体材料制成并被引入到弯曲元件（8a）中的注入有源区域盘（78a）中。在有源区域盘（78a）中设置两个相互间隔的由第二导电类型的半导体材料制成的漏极和源极区域（79,80），在所述两个区域之间延伸的沟道区域。由第二导电类型的半导体材料制成的注入馈电线导向漏极和源极区域（79,80）。有源区域盘（78a）的上表面被栅极氧化物（81a）覆盖。在沟道区域中，由多晶硅制成的栅极（81）位于栅极氧化物（81a）上，同样由通向所述栅电极的多晶硅制成的馈电线。

7. 发明授权

US08975671B2 Microelectromechanical semiconductor component that is sensitive to mechanical stresses, and comprises an ion implantation masking material defining a channel region 有权
标题翻译：对机械应力敏感的微机电半导体部件，并且包括限定沟道区域的离子注入掩模材料
公开(公告)号：US08975671B2
公开(公告)日：2015-03-10
申请号：US13521141
申请日：2011-01-10
申请人： Arnd Ten Have
发明人： Arnd Ten Have
IPC分类号： H01L29/00
CPC分类号： B81C1/00158 , B81B3/0018 , B81B3/0021 , B81B3/007 , B81B3/0072 , B81B3/0081 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81C1/00626 , B81C99/0035 , B81C2201/019 , G01L9/0047 , H01L29/4916 , H01L29/84
摘要： A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a contacting region made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material, which comprises transverse edges defining the length of the channel region and longitudinal edges defining the width of the channel region and which comprises an edge recess at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions that adjoin the channel region extending all the way into said edge recess.
摘要翻译：半导体部件设置有半导体基板，其上表面通过离子注入引入由第一导电类型的材料制成的有源区。具有限定长度和宽度的半导体沟道区域设计在有源区域内。位于纵向延伸部中的通道区域的每个端部之后是由第二导电类型的半导体材料制成的接触区域。沟道区域被离子注入掩模材料覆盖，离子注入掩模材料包括限定沟道区域的长度的横向边缘和限定沟道区域的宽度的纵向边缘，并且其包括在与纵向方向对准的每个相对的横向边缘处的边缘凹部通道区域的延伸端，与通道区域相邻的接触区域一直延伸到所述边缘凹部中。

8. 发明授权

US08850245B2 Method for operating a bus system 有权
标题翻译：操作总线系统的方法
公开(公告)号：US08850245B2
公开(公告)日：2014-09-30
申请号：US13219748
申请日：2011-08-29
申请人： Radoslaw Watroba , Rainer Kraly , Christian Schmitz
发明人： Radoslaw Watroba , Rainer Kraly , Christian Schmitz
IPC分类号： G06F1/26 , H04L12/40
CPC分类号： H04L12/40039 , H04L2012/40215
摘要： A method for the switching of participants of a bus system from a first state with reduced energy consumption to a second state with increased energy consumption relative to the first state, wherein, for communication between the participants of the bus system, data frames are transmitted which comprise, inter alia, a message identification field (e.g. CAN message) and a useful-data field (e.g. CAN payload), wherein, according to said method, each participant, for switching from the first state to the second state, reacts on data frames with respectively predetermined data contents in the message identification field as well as in the useful-data field. Further, in the bus system, for selective switching of a participant from the first state to the second state, those data frames will be transmitted on whose message-identification-field contents and useful data-field-contents the selectively addressable participant reacts.
摘要翻译：一种用于将总线系统的参与者从具有降低的能量消耗的第一状态切换到具有相对于第一状态的能量消耗增加的第二状态的方法，其中，对于总线系统的参与者之间的通信，发送数据帧，包括消息识别字段（例如CAN消息）和有用数据字段（例如CAN有效载荷），其中根据所述方法，用于从第一状态切换到第二状态的每个参与者对数据做出反应在消息识别字段以及有用数据字段中分别具有预定数据内容的帧。此外，在总线系统中，为了将参与者从第一状态到第二状态的选择性切换，这些数据帧将被发送到其选择性可寻址的参与者反应的消息识别字段内容和有用数据字段内容。

9. 发明申请

US20140233685A1 RECEIVER COMPENSATION 有权
标题翻译：接收者补偿
公开(公告)号：US20140233685A1
公开(公告)日：2014-08-21
申请号：US14178365
申请日：2014-02-12
申请人： ELMOS SEMICONDUCTOR AG
发明人： Bernd BURCHARD , Juergen LARM
IPC分类号： H04B15/00
CPC分类号： G01S7/497
摘要： A receiver compensation system and method to operate the receiver compensation system are disclosed. The compensation sensor system includes at least one receiver and at least one control loop. The method to operate the receiver compensation system is characterized in that the receiver is adjusted in its sensitivity by a control signal such that in the case of changes of an input received by the receiver, a control signal of the control loop resets an associated receiver output signal, except for a control error. Further, at least one other signal of the control loop represents or contains a measurement of the change of the input received by the receiver.
摘要翻译：公开了一种操作接收机补偿系统的接收机补偿系统和方法。补偿传感器系统包括至少一个接收器和至少一个控制回路。操作接收机补偿系统的方法的特征在于，通过控制信号对接收机的灵敏度进行调节，使得在接收机接收的输入发生变化的情况下，控制环路的控制信号复位相关的接收机输出信号，除了控制错误。此外，控制回路的至少一个其他信号表示或包含由接收器接收的输入的变化的测量。

10. 发明申请

US20130193529A1 MICRO-ELECTROMECHANICAL SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF 有权
标题翻译：微电子半导体元件及其生产方法
公开(公告)号：US20130193529A1
公开(公告)日：2013-08-01
申请号：US13521146
申请日：2011-01-10
申请人： Bernd Burchard
发明人： Bernd Burchard
IPC分类号： B81C1/00 , B81B3/00
CPC分类号： B81C1/00158 , B81B3/0018 , B81B3/0021 , B81B3/007 , B81B3/0072 , B81B3/0081 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81C1/00626 , B81C99/0035 , B81C2201/019 , G01L9/0047 , H01L29/4916 , H01L29/84
摘要： The micro-electromechanical semiconductor component is provided with a first semiconductor substrate, which has an upper face, and a second semiconductor substrate, which has an upper face. Both semiconductor substrates are bonded resting on the upper faces thereof. A cavity is introduced into the upper face of at least one of the two semiconductor substrates. The cavity is defined by lateral walls and opposing top and bottom walls, which are formed by the two semiconductor substrates. The top or the bottom wall acts as a reversibly deformable membrane and an opening extending through the respective semiconductor substrate is arranged in the other of said two walls of the cavity.
摘要翻译：微机电半导体部件设置有具有上表面的第一半导体基板和具有上表面的第二半导体基板。两个半导体衬底被粘合在其上表面上。空腔被引入到两个半导体衬底中的至少一个的上表面。空腔由侧壁和由两个半导体衬底形成的相对的顶壁和底壁限定。顶壁或底壁用作可逆变形的膜，并且延伸穿过相应的半导体衬底的开口布置在空腔的所述两个壁中的另一个中。

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