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1. 发明申请

US20220375885A1 FLIP-CHIP BALL GRID ARRAY-TYPE INTEGRATED CIRCUIT PACKAGE FOR VERY HIGH FREQUENCY OPERATION 有权
公开(公告)号：US20220375885A1
公开(公告)日：2022-11-24
申请号：US17750122
申请日：2022-05-20
申请人： Teledyne e2v Semiconductors SAS
发明人： Olivier Legendre , François Bore , Benoit Dervaux
IPC分类号： H01L23/66 , H01L23/498 , H05K1/18
摘要： The invention relates to a flip-chip integrated circuit package of the ball array type, wherein: the underside of the package includes a plurality of receiving pads for signal, ground and solder balls; stacks of signal and ground vias, electrically connected to respective receiving pads, pass vertically through the package's dielectric body forming a quasi-coaxial structure. In an upper part of the package body: the signal vias are electrically connected to a lesser number of signal conductive bumps protruding from the upper surface of the package's dielectric body; and at least two ground vias are connected by means of conductive projections to respective ground conductive bumps, forming a ring around the signal conductive bumps.

2. 发明授权

US10798323B1 Control method for an active pixel image sensor 有权
公开(公告)号：US10798323B1
公开(公告)日：2020-10-06
申请号：US16070885
申请日：2017-01-13
申请人： Teledyne e2v Semiconductors SAS
发明人： Frédéric Mayer , Frédéric Barbier , Stéphane Gesset
IPC分类号： H04N5/355 , H04N5/374 , H04N5/378 , H04N5/235 , H04N5/359 , H04N5/217 , H01L27/146 , H04N5/3745
摘要： In an active pixel sensor comprising a photodiode Dp, a memory node MN and a readout node SN, the memory node being provided to contain the charge generated by the photodiode at the end of an integration period allowing an integration in global shutter mode and a correlated double sampling, it is envisaged to carry out, in each integration period, at least one transfer {circle around (2)} of charge from the photodiode to the memory node followed by clipping {circle around (3)} of the amount of charge contained in the memory node at an intermediate voltage t1 after the start of the integration period but before a last transfer of charge {circle around (4)} to the memory node at the end of the integration period. The pixels are subsequently read out, row by row, by correlated double sampling CDS. The one or more intermediate transfers, with clipping, to the memory node during the integration period allow the dynamic range of the sensor to be extended to high levels of ambient light while retaining good sensitivity to low levels of ambient light.

3. 发明授权

US10595797B2 Dental intraoral radiological image sensor 有权
公开(公告)号：US10595797B2
公开(公告)日：2020-03-24
申请号：US15420907
申请日：2017-01-31
申请人： E2V SEMICONDUCTORS
发明人： Nathalie Pascal , David Perennez
IPC分类号： A61B6/14 , A61B5/00 , H01L27/146 , H01L27/148 , G01T1/24 , G03B42/04
摘要： An intra-oral dental radiological image sensor is mechanically reinforced by two front RA and rear RB mechanical reinforcing plates each inserted between a respective face of an image capture module and a respective front 20A and rear 20B shell bottom of a casing. The front reinforcing plate is a solid plate, made of material transparent to X rays, covering the photosensitive front face (scintillator) of the module, and harder than the front shell. The rear plate, less thick than the front plate, is harder than the rear shell and comprises an opening O provided to surround, without covering them, components present on the rear face of the module, under a rear shell dome.

4. 发明授权

US10446597B2 Hermetic electronic-component package, in particular for an image sensor 有权
公开(公告)号：US10446597B2
公开(公告)日：2019-10-15
申请号：US15953582
申请日：2018-04-16
申请人： Teledyne e2v Semiconductors SAS
发明人： Philippe Sandri , Pierre Reber , Charlotte Alluis , Laurent Riondet
IPC分类号： H01L27/146 , H01L23/04 , H01L23/10
摘要： In a hermetic integrated-circuit package, the peripheral wall that bounds the cavity 2 containing the integrated circuit has, all the length of the peripheral wall, a surface containing a relief, which is defined by a raised planar zone z1, on the side inside the package of the cavity, and a recessed zone z2, on the exterior of the raised planar zone. The planar zone makes direct contact with the closing plate 6 of the package, without interposition of adhesive, over the entire length of the peripheral wall, except where planarity defects prevent the contact. The recessed zone does not make direct contact with the closing plate, and contains an adhesive bead that joins the closing plate and the upper portion of the peripheral wall over all the peripheral length of the latter. The adhesive bead 9 has a surface Se in open air between the closing plate and the recessed zone, on the exterior side of the package. This surface serves as an exchange surface with the exterior atmosphere of the package, in case of adhesive degassing.

5. 外观设计

USD827837S1 Digital dental X-ray 有权
公开(公告)号：USD827837S1
公开(公告)日：2018-09-04
申请号：US29584965
申请日：2016-11-18
申请人： E2V SEMICONDUCTORS
设计人： Nathalie Pascal , David Perennez

6. 发明申请

US20180214096A1 DENTAL INTRAORAL RADIOLOGICAL IMAGE SENSOR 审中-公开
公开(公告)号：US20180214096A1
公开(公告)日：2018-08-02
申请号：US15420907
申请日：2017-01-31
申请人： E2V SEMICONDUCTORS
发明人： Nathalie PASCAL , David PERENNEZ
IPC分类号： A61B6/14
摘要： An intra-oral dental radiological image sensor is mechanically reinforced by two front RA and rear RB mechanical reinforcing plates each inserted between a respective face of an image capture module and a respective front 20A and rear 20B shell bottom of a casing. The front reinforcing plate is a solid plate, made of material transparent to X rays, covering the photosensitive front face (scintillator) of the module, and harder than the front shell. The rear plate, less thick than the front plate, is harder than the rear shell and comprises an opening O provided to surround, without covering them, components present on the rear face of the module, under a rear shell dome.

7. 发明授权

US10033363B2 Method for synchronously distributing a digital signal over N identical adjacent blocks of an integrated circuit 有权
公开(公告)号：US10033363B2
公开(公告)日：2018-07-24
申请号：US15534524
申请日：2015-12-08
申请人： Teledyne e2v Semiconductors SAS
发明人： Bruno Diasparra , Frédéric Barbier
IPC分类号： H03K5/15
摘要： The invention proposes a method for distributing a signal to each block Bj of a series of N adjacent blocks of identical design in an electronic circuit. It proposes, in an identical fashion for each of the N blocks, placing a timing delay circuit MUX-DELj on the path for conveying a signal Sc from the input INcj of the block to an internal electrical node Ndj of the block for this signal Sc; providing for the timing delay circuit to supply N delayed signals corresponding to N different timing delays Δf1, . . . Δfj, . . . ΔfN separated by an increment of elementary duration Δt that corresponds to the elementary delay Δt for transit of a block introduced into a conductive line; and selecting the delayed signal corresponding to the applicable timing delay according to the block in question, by means of an index signal propagated through the N blocks, and which is incremented or decremented on passage through each block.

8. 发明授权

US08933495B2 Charge-integration multilinear image sensor 有权
标题翻译：电荷积分多线性图像传感器
公开(公告)号：US08933495B2
公开(公告)日：2015-01-13
申请号：US13359200
申请日：2012-01-26
申请人： Frederic Mayer
发明人： Frederic Mayer
IPC分类号： H01L27/148
CPC分类号： H01L27/14856
摘要： The invention relates to time-delay and signal-integration linear image sensors (or TDI sensors). According to the invention, a pixel comprises a succession of several insulated gates covering a semiconducting layer, the gates of one pixel being separated from one another and separated from the gates of an adjacent pixel of another line by narrow uncovered gaps of a gate and comprising a doped region of a second type of conductivity covered by a doped superficial region of the first type; the superficial regions are kept at one and the same reference potential; the width of the narrow gaps between adjacent gates is such that the internal potential of the region of the second type is modified in the whole width of the narrow gap when a gate sustains the alternations of potential necessary for the transfer of charges from one pixel to the following one.
摘要翻译：本发明涉及时间延迟和信号积分线性图像传感器（或TDI传感器）。根据本发明，像素包括覆盖半导体层的一系列绝缘栅极，一个像素的栅极彼此分离，并且通过栅极的窄未覆盖的间隙与另一条线的相邻像素的栅极分离，并且包括由第一类型的掺杂表面区域覆盖的第二类型电导率的掺杂区域; 表面区域保持一个相同的参考电位; 相邻栅极之间的窄间隙的宽度使得当栅极维持电荷从一个像素传输到电位所需的电位的变化时，第二类型的区域的内部电位在窄间隙的整个宽度上被修改以下一个。

9. 发明申请

US20140263969A1 MOVING IMAGE SENSOR HAVING MULTIPHASE DIGITAL SUMMATION 有权
标题翻译：移动具有多相数字建立的图像传感器
公开(公告)号：US20140263969A1
公开(公告)日：2014-09-18
申请号：US14353183
申请日：2012-10-18
申请人： E2V Semiconductors
发明人： Frédéric Mayer , Henri Bugnet
IPC分类号： H04N5/372
CPC分类号： H04N5/372 , H04N5/37206 , H04N5/37457
摘要： The invention relates to time-delay and charge integration image sensors employing active CMOS technology pixels. The sensor comprises N rows of pixels and each pixel of generally square shaped comprises two (though possibly also three or four) photodiodes and charge storage nodes, having means for transferring charges from each photodiode to one or other of the storage nodes. Control of transfer from the photodiodes to one then the other of the storage nodes is carried out in such a way that one storage node receives in succession, during two successive phases of a periodic cycle, the charges from two photodiodes that have seen the same image portion during the two phases. The charges received by one of the storage nodes during the first phase is added to the charges received by the other storage node in the following phase.
摘要翻译：本发明涉及采用有源CMOS技术像素的时间延迟和电荷积分图像传感器。该传感器包括N行像素，并且每个大致正方形的像素包括两个（尽管可能还有三个或四个）光电二极管和电荷存储节点，具有用于将电荷从每个光电二极管传送到一个或另一个存储节点的装置。从光电二极管到另一个存储节点的传输的控制是这样一种方式进行的，即一个存储节点在周期性周期的连续两个阶段中连续接收来自已经看到相同图像的两个光电二极管的电荷两个阶段的部分。在第一阶段期间由其中一个存储节点接收的电荷被添加到另一存储节点在下一阶段中接收的电荷。

10. 发明授权

US08748954B2 Multilinear image sensor with charge integration 有权
标题翻译：具有电荷积分的多线性图像传感器
公开(公告)号：US08748954B2
公开(公告)日：2014-06-10
申请号：US13514982
申请日：2010-12-02
申请人： Frederic Mayer
发明人： Frederic Mayer
IPC分类号： H01L31/062
CPC分类号： H01L27/14856 , H01L27/14812
摘要： The invention relates to linear time-delay and integration sensors (or TDI sensors). According to the invention, adjacent pixels of the same rank comprise, alternately, at least one photodiode and one transfer gate adjacent to the photodiode, the photodiodes comprising a common reference region of a first conductivity type, in which an individual region of opposite conductivity type is formed, itself covered by a individual surface region of the first conductivity type, characterized in that the surface regions of two photodiodes located on either side of a transfer gate are electrically separated so as to be able to be brought to different potentials in order to create potential wells and potential barriers allowing accumulation and transfer of charges as desired.
摘要翻译：本发明涉及线性时间延迟和集成传感器（或TDI传感器）。根据本发明，相同秩的相邻像素交替地包括与光电二极管相邻的至少一个光电二极管和一个传输门，光电二极管包括第一导电类型的公共参考区域，其中具有相反导电类型的单个区域形成，其本身由第一导电类型的单个表面区域覆盖，其特征在于，位于传输门的任一侧的两个光电二极管的表面区域被电分离，以便能够被带到不同的电位，以便创造潜在的井和潜在的障碍，允许根据需要累积和转移收费。

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