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1. 发明申请

US20140319364A1 Photonic Radiation Detection Device, And Methods For Dimensioning And Operating Such Device 审中-公开
标题翻译：光子辐射检测装置及其尺寸和操作方法
公开(公告)号：US20140319364A1
公开(公告)日：2014-10-30
申请号：US14262194
申请日：2014-04-25
申请人： Commissariat A L'Energie Atomique et Aux Energies Alternatives (Former name: Commissariat A L'Energie Atomique
发明人： Charlotte ROBERT , Guillaume MONTEMONT , Veronique REBUFFEL
IPC分类号： G01T1/24
CPC分类号： G01T1/24 , G01T1/1647
摘要： A photonic radiation detection device includes a collimator, a detector, and localization means for determining information relative to the localization of a photon interaction with the detector material. In at least one previously selected acquisition configuration, a degree of pixelation in the detection plane is greater than 1 and a collimator-detector distance (C) is greater than one tenth of the septal height (h) of the collimator where the septal height is a maximum dimension of the collimator in a direction orthogonal to the frontal detection plane. In one instance, the septal wall thickness (e) is one of about 0.1 or less than about 0.1 of the channel width (w). In another instance, the collimator-detector distance is greater than h/(2(w/e−1)). A dimensioning method includes, for at least one given spatial frequency, calculating and comparing merit indicator values for different acquisition configurations of a structural model of the detection device.
摘要翻译：光子辐射检测装置包括准直器，检测器和用于确定相对于与检测器材料的光子相互作用的定位的信息的定位装置。在至少一个先前选择的采集配置中，检测平面中的像素度大于1，并且准直器 - 检测器距离（C）大于准直器的间隔高度（h）的十分之一，其中间隔高度为准直仪在与正面检测平面正交的方向上的最大尺寸。在一种情况下，隔壁厚度（e）是通道宽度（w）的约0.1或小于约0.1之一。在另一个实例中，准直器 - 检测器距离大于h /（2（w / e-1）））。对于至少一个给定的空间频率，尺寸标注方法包括计算和比较检测装置的结构模型的不同采集配置的优点指标值。

2. 发明公开

US20240128227A1 SIP-TYPE ELECTRONIC DEVICE AND METHOD FOR MAKING SUCH A DEVICE 审中-公开
公开(公告)号：US20240128227A1
公开(公告)日：2024-04-18
申请号：US18486467
申请日：2023-10-13
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Perceval COUDRAIN , Arnaud GARNIER , Jeanne PIGNOL
IPC分类号： H01L23/00 , H01L21/56 , H01L23/31 , H01L23/367 , H01L23/427 , H01L23/552
CPC分类号： H01L24/32 , H01L21/561 , H01L23/3128 , H01L23/367 , H01L23/427 , H01L23/552 , H01L24/19 , H01L24/20 , H01L24/27 , H01L24/29 , H01L24/83 , H01L24/96 , H01L21/568 , H01L2224/19 , H01L2224/211 , H01L2224/27845 , H01L2224/29082 , H01L2224/29144 , H01L2224/29147 , H01L2224/29166 , H01L2224/32225 , H01L2224/32245 , H01L2224/83005 , H01L2224/83193 , H01L2224/83201 , H01L2224/83895 , H01L2224/83948 , H01L2224/95001 , H01L2224/96 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109
摘要： A SiP-type electronic device, including an electronic chip provided with an electrical interconnection face; a redistribution layer electrically coupled to the electrical interconnection face of the chip; electrical connection elements electrically coupled to the chip by the redistribution layer which is arranged between the chip and the connection elements; a first metal layer arranged on the side of a second face of the chip and secured to this second face; an encapsulation material arranged around the chip, between the redistribution layer and the first metal layer; a second metal layer including a first face secured by direct bonding to the first metal layer; a substrate arranged against a second face of the second metal layer.

3. 发明公开

US20240125992A1 OPTICAL FILTER FOR MULTISPECTRAL SENSOR 审中-公开
公开(公告)号：US20240125992A1
公开(公告)日：2024-04-18
申请号：US18191550
申请日：2023-03-28
申请人： STMicroelectronics (Crolles 2) SAS , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Quentin ABADIE , Sandrine VILLENAVE
IPC分类号： G02B5/28 , G01J3/28
CPC分类号： G02B5/288 , G01J3/2823 , G01J2003/2826
摘要： The present description concerns an optical filter intended to be arranged in front of an image sensor comprising a plurality of pixels, the filter comprising, for each pixel, a resonant cavity comprising a first transparent layer, interposed between second and third mirror layers, and a diffraction grating formed in the first layer, wherein at least one of the cavities has a different thickness than another cavity.

4. 发明公开

US20240122514A1 SYSTEM FOR POSITIONING AND MAINTAINING THE POSITION OF A REFERENCE SENSOR AROUND A MAGNETOENCEPHALOGRAPHY HELMET 审中-公开
公开(公告)号：US20240122514A1
公开(公告)日：2024-04-18
申请号：US18547735
申请日：2022-02-17
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Etienne LABYT , William FOURCAULT , Ilea PAQUIN-HONORE , Guilhem LAFFONT
IPC分类号： A61B5/245 , A61B5/00 , A61B90/00
CPC分类号： A61B5/245 , A61B5/6803 , A61B90/08 , A61B2560/0406 , A61B2560/0462
摘要： A system for positioning and maintaining a position of a reference sensor around a magnetoencephalography helmet. The system includes an arch comprising at least one fixing branch for fixing the arch to an MEG helmet, a support plate on which the branch is fixed, a sensor support post fixed to the support plate of the arch; and a locking component for fixing the reference sensor to the post in at least one position defining the position with respect to an MEG helmet.

5. 发明公开

US20240113040A1 METHOD FOR PRODUCING AN INDIVIDUALIZATION ZONE OF AN INTEGRATED CIRCUIT 审中-公开
公开(公告)号：US20240113040A1
公开(公告)日：2024-04-04
申请号：US18318044
申请日：2023-05-16
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Stefan LANDIS , Yorrick EXBRAYAT
IPC分类号： H01L23/00 , H01L21/027 , H01L21/311 , H01L21/768
CPC分类号： H01L23/573 , H01L21/027 , H01L21/31144 , H01L21/76802 , H01L21/76877
摘要： A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level including vias, includes providing the first level and a dielectric layer, forming an etching mask on the dielectric layer, randomly depositing particles on the etching mask, and forming a lithographic layer having opening patterns. The mask layer is etched through opening patterns to form mask openings, then the dielectric layer is etched through the mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

6. 发明公开

US20240112867A1 SUPERCAPACITORS, AND METHODS OF THEIR MANUFACTURE 审中-公开
公开(公告)号：US20240112867A1
公开(公告)日：2024-04-04
申请号：US18532419
申请日：2023-12-07
申请人： Murata Manufacturing Co., Ltd. , Commissariat A L'Energie Atomique Et Aux Energies Alternatives
发明人： Sami OUKASSI , Valentin SALLAZ , Frédéric VOIRON
IPC分类号： H01G11/56 , H01G11/06 , H01G11/50 , H01G11/84
CPC分类号： H01G11/56 , H01G11/06 , H01G11/50 , H01G11/84
摘要： A supercapacitor that includes: a first electrode; a second electrode; and a composite solid electrolyte disposed between the first electrode and the second electrode. The composite solid electrolyte includes a dielectric matrix and an ionic conductor disposed in channels/pores in the dielectric matrix. Methods of fabricating such supercapacitors are also disclosed.

7. 发明公开

US20240101958A1 NOVEL HUMAN ERYTHROID PROGENITOR CELL LINE HIGHLY PERMISSIVE TO B19 INFECTION AND USES THEREOF 审中-公开
公开(公告)号：US20240101958A1
公开(公告)日：2024-03-28
申请号：US18256801
申请日：2021-12-13
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , LABORATOIRE FRANCAIS DU FRACTIONNEMENT ET DES BIOTECHNOLOGIES
发明人： Zahra KADRI , Stany CHRETIEN , Emmanuel PAYEN , Bruno YOU , Celine DUCLOUX
IPC分类号： C12N5/078 , C12N5/00 , C12N7/00 , G01N33/50
CPC分类号： C12N5/0641 , C12N5/0018 , C12N7/00 , G01N33/5044 , C12N2501/14 , C12N2750/14051 , G01N2333/015
摘要： The present invention concerns a novel human erythroid progenitor cell line, wherein at least 90% of the cells are CD36+ CD44−CD71+; and wherein the cells:—do not express the gene encoding the receptor of Granulocyte-macrophage colony-stimulating factor (GM-CSF-R gene) or express GM-CSF-R gene at a lower level than the cells of human UT-7/Epo-S1 cell line; and—express the gene encoding the receptor of erythropoietin (Epo-R gene). The present invention also concerns the uses thereof for producing, detecting, or quantifying parvovims B19. The present invention allows the use of the cell lines for 1) a highly sensitive B19 infectious particles detection, and, 2) the efficient production of infectious B19 particles.

8. 发明公开

US20240079157A1 METHOD FOR STRIPPING URANIUM(VI) AND AN ACTINIDE(IV) FROM AN ORGANIC SOLUTION BY OXALIC PRECIPITATION 审中-公开
公开(公告)号：US20240079157A1
公开(公告)日：2024-03-07
申请号：US18458241
申请日：2023-08-30
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , Université de Montpellier , École nationale supérieure de chimie de Montpellier
发明人： Daniel Meyer , Muriel Bertrand , Damien Bourgeois , Julie Durain
IPC分类号： G21F9/12
CPC分类号： G21F9/125
摘要： A method for stripping U(VI) and an An(IV) from an organic solution including tri-n-butyl phosphate in an organic diluent, the solution containing U(VI) and the An(IV) present as U(VI) nitrate and An(IV) nitrate at concentrations such that the U(VI) nitrate concentration is higher than the An(IV) nitrate concentration, and the sum of the U(VI) nitrate and An(IV) nitrate concentrations is ≥55 g/L. The method includes contacting the organic solution and an aqueous solution of nitric and oxalic acids, the oxalic acid concentration in the aqueous solution and the O/A volume ratio selected so that the oxalic acid is deficient with respect to the stoichiometric conditions of a complete precipitation of U(VI) and actinide(IV), to obtain a precipitate containing the actinide(IV) in oxalate form and a fraction of the U(VI) in oxalate form with a U(VI)/actinide(IV) mass ratio of between 0.5 and 5; and separating the precipitate from the organic and aqueous solutions.

9. 发明公开

US20240063058A1 METHOD FOR PRODUCING AN INDIVIDUALIZATION ZONE OF AN INTEGRATED CIRCUIT 审中-公开
公开(公告)号：US20240063058A1
公开(公告)日：2024-02-22
申请号：US18350990
申请日：2023-07-12
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Nicolas POSSEME , Stefan LANDIS
IPC分类号： H01L21/768 , H01L21/8234 , H01L23/544
CPC分类号： H01L21/76877 , H01L21/823475 , H01L21/76802 , H01L23/544 , H01L2223/5444
摘要： The invention is based on a method for producing an individualisation zone of a chip comprising a component level and a contact level comprising vias, the method comprising the following steps:

providing the components level and a dielectric layer,
forming a mask on the dielectric layer,
etching the dielectric layer through mask openings so as to form openings opening onto the contact zones of the components level,
forming fluorinated residue by inputting fluorinated species on at least some contact zones, the openings thus comprising openings with fluorinated residue and openings without residue,
filling the openings so as to form the vias of the contact level, said vias comprising functional vias at the openings without residue and altered vias at the openings with residue.

10. 发明公开

US20240046134A1 SPIN QUBIT ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20240046134A1
公开(公告)日：2024-02-08
申请号：US18336169
申请日：2023-06-16
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Xavier BAILLIN , Richard FOURNEL
IPC分类号： G06N10/40
CPC分类号： G06N10/40
摘要： An electronic device includes first and second quantum dots disposed along a direction, first and second control gates associated with said quantum dots, and a magnet configured to generate two opposite spin states at each of the first and second quantum dots. The magnet includes first and second magnetic domains distributed along the direction and separated by a domain wall. The magnetic domains respectively have first and second magnetisations of opposite directions in the direction. The first and second quantum dots thus receive first and second magnetic field gradients.

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